TY - JOUR A1 - Pourjamal, S. A1 - Mäntynen, H. A1 - Jaanson, P. A1 - Rosu, Dana Maria A1 - Hertwig, Andreas A1 - Manoocheri, F. A1 - Ikonen, E. T1 - Characterization of thin-film thickness N2 - Analysis methods and instrumentation for obtaining optical parameters and thickness profiles of thin-film samples from spectrophotometric and ellipsometric measurements are presented. Measured samples include thermally grown and evaporated SiO2 on a silicon substrate and a polymer photoresist layer on silicon. Experimental results at multiple sample positions give the thickness uniformity and optical constants of thin films. The thickness results obtained with spectrophotometry and ellipsometry agree within 1 nm for the 300 nm thick layer of SiO2 on silicon. For the 1600 nm thick resist sample the agreement of the measurement methods is within 8 nm. For the sample with a nominally 6000 nm thick layer of SiO2 on silicon, there is a deviation of ~100 nm between the spectrophotometry and ellipsometry results. As an application, the optical parameters of a SiO2 layer on an induced junction silicon photodiode are determined by spectrophotometry and are used to confirm earlier values and uncertainties of the SiO2 refractive index and layer thickness non-uniformity. KW - Index of refraction KW - Thin-film thickness KW - Silicon dioxide KW - Spectrophotometry KW - Ellipsometry KW - Silicon photodiode PY - 2014 DO - https://doi.org/10.1088/0026-1394/51/6/S302 SN - 0026-1394 SN - 1681-7575 VL - 51 IS - 6 SP - S302 EP - S308 PB - Inst. of Physics Publ. CY - Bristol AN - OPUS4-32729 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -