TY - CONF A1 - Hertwig, Andreas T1 - Standardisation in the analysis of complex thin film systems with ellipsometry T2 - Workshop Ellipsometry 2012 CY - Leipzig, Germany DA - 2012-03-05 PY - 2012 AN - OPUS4-25685 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Standardisation in the analysis of complex thin film systems with ellipsometry T2 - Workshop Ellipsometry 2012 CY - Leipzig, Germany DA - 2012-03-05 PY - 2012 AN - OPUS4-25686 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - On the use of plasma-deposited thin films for gas sensors with read-out based on the SPR effect T2 - PSE 2012, 13th International Conference on Plasma Surface Engineering CY - Garmisch-Partenkirchen, Germany DA - 2012-09-10 PY - 2012 AN - OPUS4-25971 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Beck, Uwe A1 - Hönig, D. A1 - Schneider, S. A1 - Domnick, R. A1 - Belzner, M. A1 - Hertwig, Andreas A1 - Stephanowitz, Ralph A1 - Sahre, Mario A1 - Weise, Matthias T1 - Fabry-Perot-based layer stacks for ellipsometric encoding - Embedded public, hidden, and forensic information for product authentication N2 - Public, hidden, and forensic features either encoded or directly legible are used for authentication. Fabry-Perot layer stacks as information carriers in combination with imaging ellipsometry as optical read-out system provide all-in-one anti-counterfeiting capability that may establish the new security level 'encoded forensic'. Different layer designs are described with regard to all three security levels: public features (e.g. color and tilt effect) perceptible by the human eye, hidden features (e.g. spectroscopic response in the UV or IR), and forensic features (ellipsometric quantities Ψ and Δ as a function of wavelength λ and angle of incidence AOI). Physically uncloneable functions (PUF) could be realized as a result of a multi-material and a multi-parameter deposition approach as well as by means of specific design features of the Fabry-Perot layer stack. Hence, they are not subject to any reverse engineering strategies. Examples of stratified, micro-structured, and laser-modified Fabry-Perot layer systems are considered that may be used at all perception levels (e.g. human eye, bar code reader, and imaging ellipsometry) for authentication against product counterfeiting and related areas. -------------------------------------------------------------------------------------------------------------------- Zur Authentifizierung werden offene, versteckte und forensische Merkmale entweder codiert oder direkt auslesbar verwendet. Mit Fabry-Perot Schichtsystemen als Informationsträger in Kombination mit der abbildenden Ellipsometrie als optischem Auslesesystem steht ein 'all-in-one' Fälschungsschutz-System zur Verfügung, das ein neues Sicherheitsniveau 'kodiert-forensisch' darstellt. Es werden unterschiedliche Schichtdesigns beschrieben, mit denen alle drei Sicherheitsniveaus realisiert werden können: offene Merkmale (z.B. Farbe und Kippeffekt), die mit dem menschlichen Auge wahrnehmbar sind, versteckte Merkmale (z.B. die spektrale Antwort im Sichtbaren oder im IR) sowie forensische Merkmale (ellipsometrische Größen Ψ und Δ als Funktion der Wellenlänge λ und des Einfallswinkels AOI). Physikalisch nicht klonbare Funktionen (PUF) können im Ergebnis einer Multi-Material- und Multi-Parameter Beschichtungsstrategie sowie durch spezifische Design-Merkmale des Fabry-Perot Schichtsystems realisiert werden. Folglich sind solche Schichtsysteme dem 'reverse engineering' nicht zugänglich. Es werden Beispiele für lateral ausgedehnte, mikrostrukturierte und Laser modifizierte Schichtsysteme auf verschiedenen Ausleseniveaus (menschliches Auge, Barcode-Lesegerät, abbildendes Ellipsometer) vorgestellt, die zur Authentifizierung von Produkten und verwandte Gebiete geeignet sind. KW - Fabry-Perot Schichten KW - Ellipsometrie KW - Produkt- und Markenschutz PY - 2012 DO - https://doi.org/10.1002/vipr.201200494 SN - 0947-076X SN - 1522-2454 VL - 24 IS - 4 SP - 6 EP - 11 PB - Wiley-VCH Verl. CY - Weinheim AN - OPUS4-26180 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Charakterisierung von Oberflächen und dünnen Schichten mit Ellipsometrie T2 - BLiX-Seminar, TU Berlin CY - Berlin, Germany DA - 2012-07-10 PY - 2012 AN - OPUS4-26147 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Beck, Uwe A1 - Hertwig, Andreas A1 - Männ, Marion T1 - Certified reference material BAM-L101 TiO2/SiO2 multilayer on BK7 glass PY - 2005 UR - http://www.rm-certificates.bam.de/de/rm-certificates_media/rm_cert_layer_and_surface/bam_l101repe.pdf SP - 1 EP - 22 PB - Bundesanstalt für Materialforschung und -prüfung CY - Berlin AN - OPUS4-25407 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hönig, D. A1 - Schneider, S. A1 - Domnick, R. A1 - Belzner, M. A1 - Beck, Uwe A1 - Hertwig, Andreas A1 - Stephanowitz, Ralph A1 - Weise, Matthias T1 - Optical layer systems for product authentication: interference, scattering, light diffusion and ellipsometric encoding as public, hidden and forensic security features N2 - Embedding of information on surfaces is state of the art for identification testing in which public, hidden and forensic features are used. In many instances, the legal authentication of a product, a material or a document is required. Among the surface-based encoded labels, bar codes and data matrices are most frequently applied. They are publicly visible. The material itself is irrelevant, only a sufficient optical contrast is required. However, a strong material dependence of the label can be achieved by means of Fabry-Perot layer stacks. Stack designs are described with regard to all three security levels: public features (e.g. color and tilt effect) perceptible by the human eye, hidden features (e.g. optical response in a given spectral range) detectable by commonly available instruments and forensic features (ellipsometric quantities Ψ and Δ as a function of wavelength λ and angle of incidence AOI) only detectable by sophisticated instruments. Regarding material-correlated authentication, ellipsometric quantities Ψ and Δ are used as encoded forensic features for the first time. Hence, Fabry-Perot layer stacks as information carriers in combination with imaging ellipsometry as optical read-out system provide all-in-one anti-counterfeiting capabilities. T2 - PSE 2012 - 13th International conference on plasma surface engineering CY - Garmisch-Partenkirchen, Germany DA - 10.09.2012 KW - Fabry-Perot layers KW - Ellipsometry KW - Anti-counterfeiting PY - 2012 UR - http://www.pse-conferences.net/tl_files/pse2012/abstractupload/PSE2012-PO1001-ext.pdf SP - 1 EP - 4 AN - OPUS4-27304 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Hertwig, Andreas A1 - Koter, Robert A1 - Weise, Matthias A1 - Beck, Uwe A1 - Reinstädt, Philipp A1 - Griepentrog, Michael A1 - Krüger, Jörg A1 - Picquart, M. A1 - Haro-Poniatowski, E. T1 - Femtosecond laser pulse irradiation effects on thin hydrogenated amorphous carbon layers N2 - The irradiation of ~0.9-µm-thick hydrogenated amorphous carbon (a-C:H) layers deposited on silicon substrates with single femtosecond (fs) laser pulses (35 fs pulse duration, 790 nm centre wavelength) in air is studied experimentally. Irradiation spots have been generated with different peak fluences and subsequently investigated by optical topometry, micro Raman spectroscopy and microscale mechanical indentation in order to evaluate their microscopic, topographical, structural and mechanical properties (e.g. elastic modulus). By this multi-method approach, a clear separation of different effects (delamination and graphitisation) becomes possible. The joint application of mechanical and spectroscopic techniques provides unique insights into the effects of the fs-laser radiation on the carbon layer. PY - 2013 DO - https://doi.org/10.1007/s00339-012-7170-5 SN - 0947-8396 VL - 112 IS - 1 SP - 9 EP - 14 PB - Springer CY - Berlin AN - OPUS4-28629 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Enhanced SPR-ellipsometric gas sensors with doped dielectric layers T2 - ICSE 6 Konferenz CY - Kyoto, Japan DA - 2013-05-26 PY - 2013 AN - OPUS4-28802 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Enhanced SPR-ellipsometric gas sensors with doped dielectric layers T2 - ICSE 6 Konferenz CY - Kyoto, Japan DA - 2013-05-26 PY - 2013 AN - OPUS4-28803 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Gasdetektion mit komplexen SPR-Sensoren und ellipsometrischem Messprinzip T2 - Bunsentagung 2013 CY - Karlsruhe, Germany DA - 2013-05-09 PY - 2013 AN - OPUS4-28804 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Hertwig, Andreas A1 - Ermilova, Elena T1 - Optical constants of a single AlN layer on Si N2 - Spectroscopic ellipsometry was used to determine the thickness and dielectric function of a Aluminium Nitride (AlN) layer on a Si wafer. The layer was determined to be 170 nm thick. The layer was provided by AIXTRON and manufactured by means of MOVPE. The data was created using a M2000DI spectroscopic ellipsometer from Woollam Co. Inc. Analysis was done using the CompleteEASE software. The model used is a multi-peak oscillator model for the AlN layer. The data resembles common database values for the material AlN. KW - Aluminium nitride KW - Thin solid layers KW - Spectroscopic ellipsometry KW - Compund semiconductors KW - MOVPE PY - 2024 UR - https://zenodo.org/records/12743500 DO - https://doi.org/10.5281/zenodo.12743499 PB - Zenodo CY - Geneva AN - OPUS4-60661 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Schmidt-Grund, R. A1 - Sturm, C. A1 - Hertwig, Andreas T1 - Ellipsometry and polarimetry - Classical measurement techniques with always new developments, concepts, and applications N2 - Ellipsometry is a matured experimental method, whose roots reach back into the early phase of modern optics itself. It is often attributed to be invented by Paul Drude in the last decade of the 19th century, but similar techniques had already been applied for years before Drude started his work. With this Special Issue about ellipsometry and related techniques, we hope to bring more attention to this method and advance and propagate it to be used by a broader community. We have collected a good mixture of articles: some texts are more in the line of users’ tutorial and best practice guides; others are intended to show recent developments of the method. With this collection, we also hope to show the generally rapidly expanding possibilities of ellipsometry and polarimetry to draw attention of new users and previously unrelated communities to this valuable tool. KW - Ellipsometry KW - Polarimetry KW - Surfaces KW - Thin films KW - Optical analysis PY - 2022 DO - https://doi.org/10.1515/aot-2022-0025 SN - 2192-8584 SN - 2192-8576 VL - 11 IS - 3-4 (Topical issue: Ellipsometry) SP - 57 EP - 58 PB - De Gruyter CY - Berlin AN - OPUS4-55467 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Determining Material Properties with Spectroscopic Ellipsometry N2 - In this lecture, an introduction will be given on Spectroscopic Ellipsometry, what quantities can be obtained with it, and how we use it in ELENA and other projects to determine functional parameters of thin layers at the nanoscale. T2 - Summer school ELENAM : metrology at the nanoscale CY - Fréjus, France DA - 02.06.2024 KW - Thin Layers KW - Ellipsometry KW - Nanotechnology KW - Electrical Paramters PY - 2024 AN - OPUS4-60247 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - On the use of spectroscopic imaging ellipsometry for quantification and characterisation of defects in thin films for power electronics N2 - Compound semiconductors (CS) are promising materials for the development of high-power electrical applications. They have low losses, can withstand high temperatures and can operate at very high voltages and currents. This makes them a key technology for the electrification of many high energy applications, especially electromobility and HVDC power lines. The challenge with CS technology is that most of the process technology has to be developed anew to the high standards required by electronic applications. Today, compound semiconductors can be produced in thin layers on top of substrates fabricated from classical crystal growth processes that are already well established. A promising method for this is metal organic vapour phase epitaxy (MOVPE). With this method, many different compounds with semiconducting properties can be synthesized. Additionally, this process technology is a direct thin layer deposition method. Therefore, complex multilayer systems can be generated directly by the deposition process and without the need of doping after growing. There are a number of critical defects that can originate from the deposition process of these thin film devices. Within this project, we intend to develop new correlative imaging and analysis techniques to determine defect types, to quantify defect size and number density, as well as to characterise defects for process optimisation. We report here on the use of spectroscopic ellipsometry and imaging ellipsometry to investigate defects in several different compound semiconductor materials used in high-power electronic devices. The materials we investigated are β-Ga2O3, SiC, GaN, AlN, and AlGaN materials as well as oxidised SiC surfaces. All of these materials have their typical defects and require optimised measurement and analysis schemes for reliable detection and analysis. Spectroscopic ellipsometry is a highly sensitive method for determining the thicknesses and dielectric function of thin layers, yielding potentially a high number of microscopic properties. The combined method between ellipsometry and optical microscopy is called imaging ellipsometry and is especially powerful for the large amount of data it produces. We have analysed defects in SiC- and AlN-based thin film semiconductors as well as characterised the properties of different types of SiO2 layers created on top of SiC monocrystals. We developed ellipsometric models for the data analysis of the different semiconductor materials. If the defects have geometric features, it is useful to combine the ellipsometric analysis with topometry method like interference microscopy and scanning probe microscopy. We have successfully characterised function-critical defects in MOVPE SiC layers and correlated the findings with topography from WLIM measurements. We have developed an imaging ellipsometric measurement methodology that allows to estimate the relative defect area on a surface by a statistical raw data analysis. Compound semiconductors (CS) are promising materials for the development of high-power electrical applications. They have low losses, can withstand high temperatures and can operate at very high voltages and currents. This makes them a key technology for the electrification of many high energy applications, especially electromobility and HVDC power lines. The challenge is that most of the process technology has to be developed specifically and tailored to the high standards required by electronic applications. Today, many different CS materials can be produced in thin layers on top of substrates fabricated from classical crystal growth processes that are already well established. A promising method for this is metal organic vapour phase epitaxy (MOVPE). This technology is a direct thin layer deposition method capable of producing complex multilayer systems directly from one deposition process without the need of doping after growing. There are a number of critical defects that can originate from the deposition process when targeting electronic thin film devices. Within this project, we intend to develop new correlative imaging and analysis techniques to determine defect types, to quantify defect size and density, as well as to characterise defects for further process optimisation. We report here on the use of spectroscopic and multispectral imaging ellipsometry to investigate defects in several different compound semiconductor materials used in high-power electronic devices. The materials we investigated are β-Ga2O3, SiC, GaN, AlN, and AlGaN as well as oxidised SiC. All of these materials have their typical defects and require optimised measurement and analysis schemes for reliable detection and analysis. Spectroscopic ellipsometry is a highly sensitive method for determining the thicknesses and dielectric function of thin layers, yielding potentially a high number of microscopic properties. The combined method between ellipsometry and optical microscopy is known as imaging ellipsometry and is especially powerful for the large amount of data it produces. We have analysed defects in SiC- and AlN-based thin film semiconductors as well as characterised the properties of different types of SiO2 layers created on top of SiC monocrystals. We developed ellipsometric models for the data analysis of the different semiconductor materials. If the defects have geometric features, it is useful to combine the ellipsometric analysis with topometry methods like interference microscopy and scanning probe microscopy. We have successfully characterised function-critical defects in MOVPE SiC layers and correlated the findings with topography from WLIM measurements. We have developed an imaging ellipsometric measurement methodology that allows to estimate the relative defect area on a surface by a statistical raw data analysis. T2 - EMRS Spring Meeting 2024 - ALTECH 2024 CY - Strasbourg, France DA - 27.05.2024 KW - Ellipsometry KW - Power Electronics KW - Layer Materials KW - Defect Analysis PY - 2024 AN - OPUS4-60266 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - RPRT A1 - Piquemal, François A1 - Hoffmann, Johannes A1 - Gautier, Brice A1 - Hertwig, Andreas A1 - Frabricius, Norbert T1 - Publishable Summary for 20IND12 Elena Electrical nanoscale metrology in industry N2 - Consumer electronics, innovative quantum technologies, and Internet of Things applications all rely on semiconductors, where reliable characterisation of electrical properties at the nanoscale is essential for European innovation and competitiveness. The measurement of these properties allows the evaluation of critical parameters used to define the performance of electronic materials and components. Currently, Conductive Atomic Force Microscopes and Scanning Microwave Microscopes enable nanoscale electrical characterisation, but they are costly, complicated and, in many cases where they are used, unreliable as measurements are not traceable. The aim of the project was to make such measurements traceable for the first time, with stated uncertainties, and affordable by developing and testing cost effective instrumentation and the first “out of lab” reference standards from DC to GHz and by elaborating robust calibration methods and good practice guides using simplified uncertainty budgets. All the objectives were achieved. The project has successfully improved the user-friendly uncertainty quantification for the electrical measurements at the nanoscale in the industrial environment. The design of calibration standards has been improved and new standards for DC resistance / current as well as HF impedance have been introduced and quantified. Good practice guides for the calibration and uncertainty quantification have been written and will be available to the users’ community. New ways of determining the properties of standard samples like ellipsometry have been evaluated. The interaction with stakeholders and industry collaborators was very important for the consortium and several case studies were carried out with industry-relevant samples. All data, procedures, and example uncertainty data from the project are included into the standardisation process and two IEC standards projects have been started during this project. These standards will be used as one important dissemination ways for the results of the project. KW - Electrical Properties KW - Nanometrology KW - Scanning Probe Microscopy KW - Optical Surface Analysis PY - 2024 SP - 1 EP - 9 AN - OPUS4-61812 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Richter, Anja A1 - Buchberger, G. A1 - Stifter, D. A1 - Duchoslav, J. A1 - Hertwig, Andreas A1 - Bonse, Jörn A1 - Heitz, J. A1 - Schwibbert, Karin T1 - Spatial Period of Laser-Induced Surface Nanoripples on PET Determines Escherichia coli Repellence N2 - Bacterial adhesion and biofilm formation on surfaces are associated with persistent microbial contamination, biofouling, and the emergence of resistance, thus, calling for new strategies to impede bacterial surface colonization. Using ns-UV laser treatment (wavelength 248 nm and a pulse duration of 20 ns), laser-induced periodic surface structures (LIPSS) featuring different submicrometric periods ranging from ~210 to ~610 nm were processed on commercial poly(ethylene terephthalate) (PET) foils. Bacterial adhesion tests revealed that these nanorippled surfaces exhibit a repellence for E. coli that decisively depends on the spatial periods of the LIPSS with the strongest reduction (~91%) in cell adhesion observed for LIPSS periods of 214 nm. Although chemical and structural analyses indicated a moderate laser-induced surface oxidation, a significant influence on the bacterial adhesion was ruled out. Scanning electron microscopy and additional biofilm studies using a pili-deficient E. coli TG1 strain revealed the role of extracellular appendages in the bacterial repellence observed here. KW - Laser-induced periodic surface structures (LIPSS) KW - Laser processing KW - Polyethylene terephthalate KW - Biofilm formation KW - Cell appendages KW - Biomimetic KW - F pili PY - 2021 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-537431 DO - https://doi.org/10.3390/nano11113000 VL - 11 IS - 11 SP - 3000 PB - MDPI AN - OPUS4-53743 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Schiek, Manuela A1 - Minenkov, Alexey A1 - Hollweger, Sophia A1 - Duchoslav, Jiri A1 - Erdene-Ochir, Otgonbayar A1 - Weise, Matthias A1 - Ermilova, Elena A1 - Hertwig, Andreas T1 - Optical constants of In2O3-SnO2 (Indium tin oxide, ITO) N2 - Optical constants of In2O3-SnO2 (Indium tin oxide, ITO) Minenkov et al. 2024: on glass; n,k 0.191–1.69 µm Optical constants of In2O3-SnO2 (Indium tin oxide, ITO) Minenkov et al. 2024: on Si wafer, top; n,k 0.191–1.69 µm Optical constants of In2O3-SnO2 (Indium tin oxide, ITO) Minenkov et al. 2024: on Si wafer, bottom; n,k 0.191–1.69 µm KW - Indium Tin Oxide KW - Optical constants KW - Magnetron Sputtering KW - Electrochemical Degradation KW - Spectroscopic Ellipsometry PY - 2024 UR - https://refractiveindex.info/?shelf=other&book=In2O3-SnO2&page=Minenkov-glass UR - https://refractiveindex.info/?shelf=other&book=In2O3-SnO2&page=Minenkov-wafer-top UR - https://refractiveindex.info/?shelf=other&book=In2O3-SnO2&page=Minenkov-wafer-bottom PB - Refractiveindex.info AN - OPUS4-59766 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hülagü, Deniz A1 - Ermilova, Elena A1 - Weise, Matthias A1 - de Préville, Sophie A1 - Hoffmann, Johannes A1 - Morán-Meza, José A1 - Piquemal, Francois A1 - Hertwig, Andreas T1 - Characterization of electrical properties in microstructured ITO layers using spectroscopic ellipsometry N2 - Thin indium tin oxide (ITO) layers are essential in optoelectronics due to their good electrical conductivity, optical transparency in the visible and near infrared regions, substrate adherence and chemical stability. They are widely used in photovoltaic cells, displays, and organic LEDs, and as low emissivity coatings in smart windows and energy-efficient buildings. For nanophotonic devices, understanding the interplay of ITO’s optical and electrical properties is crucial. Electrical resistivity can be tuned by modifying deposition conditions and layer thickness. However, measuring these properties, especially on microstructured surfaces, remains challenging due to the issues like homogeneity and instability during etching. Spectroscopic ellipsometry (SE), a non-destructive and phase-sensitive optical technique, offers precise measurement of thin film thickness and dielectric properties. In this study, we investigated the layer thickness, optical constants, and sheet resistance of unstructured and microstructured ITO thin layers using SE. Unstructured layers were deposited via DC-magnetron sputtering on silicon (Si) substrates in argon (Ar) atmospheres with varying oxygen (O2) flows. This multi-technique approach enhances the understanding of ITO layer structuring and provides robust methodologies for correlating optical and electrical properties, advancing metrology for nanotechnology applications and material science. It also opens the pathway to new reference samples and calibration methods for electrical properties involving device-like structured samples. T2 - ICSE10 - 10th International Conference on Spectroscopic Ellipsometry CY - Boulder, CO, USA DA - 08.06.2025 KW - Ellipsometry KW - Indium tin oxide (ITO) KW - Scanning microwave microscopy (SMM) KW - Sheet resistance calibration standards KW - ITO wet etching PY - 2025 AN - OPUS4-63631 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hülagü, Deniz A1 - Ermilova, Elena A1 - Weise, Matthias A1 - de Préville, Sophie A1 - Hoffmann, Johannes A1 - Morán‐Meza, José A1 - Piquemal, François A1 - Hertwig, Andreas T1 - Multimethod Electrical Characterization of Thin Indium Tin Oxide Films: Structuring and Calibration Sample Development for Scanning Probe Microscopy N2 - Indium tin oxide (ITO), a transparent conductive oxide, is widely used in optoelectronic applications due to its electrical conductivity, optical transparency, and chemical stability. This study employs spectroscopic ellipsometry (SE) to analyze ITO layers, enabling nondestructive determination of film thickness, dielectric functions, and bulk conductivity. Electrical properties derived from SE are compared with those obtained using the four‐point probe method (4PM) to improve metrological tools for nanotechnology applications and optimize deposition process monitoring for better control of film properties. This work also investigates the chemical stability of ITO layers under etching conditions and explores the development of new sheet resistance standards for scanning microwave microscopy (SMM). The results show that ITO resistivity, calculated from fitted SE data, increases with oxygen flow rate up to 5 cm3(STP) min−1. Good agreement is observed between sheet resistance values obtained by SE and 4PM up to 3 cm3(STP) min−1. Additionally, the sheet resistance values of a distinct set of microstructured ITO samples with different ITO layer thicknesses are determined by SMM, which are highly consistent with those obtained by the 4PM. KW - Ellipsometry KW - Indium tin oxide (ITO) KW - Scanning microwave microscopy (SMM) KW - Sheet resistance calibration standards KW - ITO wet etching PY - 2025 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-626242 DO - https://doi.org/10.1002/pssa.202400871 SN - 1862-6300 VL - 222 IS - 14 SP - 1 EP - 18 PB - Wiley CY - Hoboken, New Jersey, USA AN - OPUS4-62624 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Lucassen, F. A1 - Franz, G. A1 - Wirth, R. A1 - Weise, Matthias A1 - Hertwig, Andreas T1 - The morphology of the reaction front of the dissolution-precipitation reaction rutile + wollastonite = titanite in time series experiments at 600 °C/400 MPa N2 - Fluid-assisted mass transport reactions by dissolution-precipitation, where a precursor mineral reacts with a fluid, play an important role in metamorphism and metasomatism. We investigated titanite growth on rutile in time series experiments between one and 107 days at constant P-T conditions of 600 °C and 400 MPa in the system TiO2-CaO-SiO2-Na2O-HCl-H2O. A two-capsule assemblage allows for transport of Ca and Si from dissolving wollastonite to dissolving rutile, the Ti-source, in a NaCl-bearing aqueous fluid, according to the general reaction CaSiO3 + TiO2 = CaTiSiO5. Complete overgrowth of rutile by titanite occurred after just one day of experiment. Fine-grained lozenge-shaped titanite crystals of short-time runs (up to 14 days) reorganize to larger predominantly prismatic crystals after >14 days. After investigation by scanning electron microscopy, the titanite overgrowth was removed from the rutile by hydrofluoric acid, to provide a three-dimensional view of the dissolution-reaction front on the rutile surface. The morphology of the rutile surface is dominated by humps or ridges beneath the central region of a titanite crystal and valleys at the grain boundaries between adjacent titanite crystals. The dissolution pattern on the rutile surface mimics the titanite overgrowth and changes with changing grain size and shape of the titanite with longer run times. The preferred dissolution of rutile in the valleys is clearly linked to the position of the titanite grain boundaries, which served as pathways for fluid-assisted element transport. Rutile-titanite and titanite-titanite boundaries show a significant porosity in transmission electron microscopy images of foils prepared by focused ion beam milling. The large-scale dissolution pattern on the rutile surface is independent of the crystallographic orientation of the rutile and entirely dominated by the arrangement of titanite crystals in the overgrowth. Dissolution features on a scale smaller than ~1 µm are dominated by stepwise dissolution and etch-pits following the crystallographic orientation of the rutile. Similar observations were made in experiments with an additional Al-source, although these experiments result in a different overgrowth pattern; i.e., an exposed rutile surface is always present and solitary titanite crystals are accompanied by partial overgrowths. Quantitative characterization of the surface morphology by white-light interference microscopy demonstrates that, with increasing grain size of titanite, dissolution of rutile is strongly enhanced at the titanite grain boundaries. Natural examples of titanite overgrowths on rutile show the same relations between element pathways, arrangement of titanite crystals and 3D dissolution pattern on rutile as in the experimental systems. We conclude that the transport of Ti away from the rutile and of Ca + Si into the reaction rim occurred in a grain boundary fluid, the composition of which must have been strongly different from the composition of the bulk fluid in the experiment, as well as in the natural system. The reaction progress depends on the availability of a fluid, and relicts of rutile in titanite indicate restricted availability of fluid in the natural system (e.g., a fluid pulse that was consumed by the reactions). The reaction examined here can serve as a proxy for other reactions of the conversion of oxide minerals (e.g., spinel or corundum) into silicates. KW - Experimental mineralogy KW - Rutile KW - Titanite KW - Dissolution-precipitation KW - Reaction morphology KW - Geochemistry & Geophysics PY - 2012 DO - https://doi.org/10.2138/am.2012.3742 SN - 0003-004X SN - 1945-3027 VL - 97 IS - 5-6 SP - 828 EP - 839 PB - Mineralogical Society of America CY - Washington, DC AN - OPUS4-27680 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -