TY - CONF A1 - Hertwig, Andreas T1 - New analytic ways to characterise mesoporous thin layers used in electrocatalytic water splitting N2 - Mesoporous materials are needed in many applications where a high specific surface area and adsorptive behaviour is needed. Important examples are separation techniques and barrier layers and catalysts. Electrochemical water splitting is the key technology for producing green hydrogen and there is no foreseeable alternative to this process for producing elementary hydrogen from green electrical power. Water electrolysis can be divided into the anodic Oxygen Evolution Reaction (OER) and the cathodic Hydrogen Evolution Reaction (HER). Both processes have to be heavily optimised to a large extent to avoid energy losses caused by overvoltage. The development of electrodes for these processes is especially difficult due to the many boundary conditions. Water splitting is a catalytic as well as electrochemical process. The contact area between the electrolyte and the electrode must be maximised maintaining the stability of the surface. Side reactions must be suppressed, and effective gas transport must be ensured. The whole process has to be tolerant with respect to temperature, harsh chemical conditions from the electrolyte as well as high current densities. We present a hybrid analytical method combining several analytical techniques for determining the properties of thin layers of mixed oxides of the general composition Ir:TiOx. These materials are promising candidates for electrocatalytical top coatings of OER electrodes. To lower the costs of the electrolysers, the main goal is to lower the Ir content retaining the system efficiency. The main properties which are hard to determine are the porous volume fraction and the Ir:Ti element ratio. By a combination of electron microscopy, spectroscopic operando ellipsometry, ellipsometric porosimetry, and other techniques, we can determine key features of mesoporous thin layer materials. We aim to develop operando capable techniques used in process monitoring as well as measurement techniques optimised for accuracy. By developing reference materials, we support long term uptake of our methodology. This work can directly be used for optimising electrocatalytic layers and is a good example for the power of hybrid metrology for improving materials design. T2 - International Conference on Resource Chemistry CY - Alzenau, Germany DA - 11.03.2024 KW - Ellipsometry KW - Electrocatalytic Water Splitting KW - Mesoporous Materials KW - Electron Probe Microanalysis KW - Hydrogen Generation PY - 2024 AN - OPUS4-59764 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Ellipsometry as a production measurement tool N2 - Spectroscopic Ellipsometry is an enormously versatile measurement tool for surfaces and thin layers. We discuss the use of ellipsometry in the context of quality control in production processes of eletrconic devices. T2 - Photonics Days Berlin Brandenburg CY - Berlin, Germany DA - 09.10.2023 KW - Ellipsometry KW - Quality control KW - Metrology PY - 2023 AN - OPUS4-59837 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Ellipsometry as a tool for electrical metrology - Referencing electrical properties of thin layers with TCO materials N2 - Ellipsometry is a highly valuable technology for bridging different measurement methods. As a fast, highly sensitive, and non-destructive optical technique with low environmental requirements, it is ideal for transporting measurement accuracy and for up-scaling measurements in the production environment. It can be used for highly precise determination of properties, material identity and correctness confirmation, as well as defect detection. Comparable, traceable, and accurate electrical measurements, especially at small scales are one of the biggest challenges in the development of the electrical and electronic devices of the future. In this project, we develop structured thin layer systems of the transparent conductive material indium tin oxide (ITO) to prove the concept of using these systems as standards for conductivity and permittivity. The layers are produced in a reactive magnetron sputtering process from raw ITO targets with additional oxidation achieved by oxygen injection. We present results of a study correlating the coating process conditions with the properties of the final layer material. We found that especially the temperature development during coating is of key importance and determines the layer properties to a large extent. We will discuss questions of homogeneity and reproducibility of the coating processes used. The finished layers undergo lithographic structuring and etching to produce patterns to serve as reference structures for scanning probe electrical measurements. TCOs have a large variety of applications. In this work we also study the usability of ITO for other purposes and investigate the stability of this material under application conditions. T2 - 12th Workshop Ellipsometry 2023 CY - Prague, Czech Republic DA - 18.09.2023 KW - Thin Films KW - Transparent Conductive Oxides KW - Ellipsometry KW - Electrical Properties KW - Nanoelectronics PY - 2023 AN - OPUS4-58410 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - On the use of spectroscopic imaging ellipsometry for quantification and characterisation of defects in thin films for power electronics N2 - Compound semiconductors (CS) are promising materials for the development of high-power electrical applications. They have low losses, can withstand high temperatures and can operate at very high voltages and currents. This makes them a key technology for the electrification of many high energy applications, especially electromobility and HVDC power lines. The challenge with CS technology is that most of the process technology has to be developed anew to the high standards required by electronic applications. Today, compound semiconductors can be produced in thin layers on top of substrates fabricated from classical crystal growth processes that are already well established. A promising method for this is metal organic vapour phase epitaxy (MOVPE). With this method, many different compounds with semiconducting properties can be synthesized. Additionally, this process technology is a direct thin layer deposition method. Therefore, complex multilayer systems can be generated directly by the deposition process and without the need of doping after growing. There are a number of critical defects that can originate from the deposition process of these thin film devices. Within this project, we intend to develop new correlative imaging and analysis techniques to determine defect types, to quantify defect size and number density, as well as to characterise defects for process optimisation. We report here on the use of spectroscopic ellipsometry and imaging ellipsometry to investigate defects in several different compound semiconductor materials used in high-power electronic devices. The materials we investigated are β-Ga2O3, SiC, GaN, AlN, and AlGaN materials as well as oxidised SiC surfaces. All of these materials have their typical defects and require optimised measurement and analysis schemes for reliable detection and analysis. Spectroscopic ellipsometry is a highly sensitive method for determining the thicknesses and dielectric function of thin layers, yielding potentially a high number of microscopic properties. The combined method between ellipsometry and optical microscopy is called imaging ellipsometry and is especially powerful for the large amount of data it produces. We have analysed defects in SiC- and AlN-based thin film semiconductors as well as characterised the properties of different types of SiO2 layers created on top of SiC monocrystals. We developed ellipsometric models for the data analysis of the different semiconductor materials. If the defects have geometric features, it is useful to combine the ellipsometric analysis with topometry method like interference microscopy and scanning probe microscopy. We have successfully characterised function-critical defects in MOVPE SiC layers and correlated the findings with topography from WLIM measurements. We have developed an imaging ellipsometric measurement methodology that allows to estimate the relative defect area on a surface by a statistical raw data analysis. T2 - EMRS Spring Meeting 2024 - ALTECH 2024 CY - Strasbourg, France DA - 27.05.2024 KW - compound semiconductors KW - Ellipsometry KW - Layer Materials KW - Defect Analysis PY - 2024 AN - OPUS4-61005 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Wolff, M. A1 - Wonneberger, R. A1 - Freiberg, K.E. A1 - Hertwig, Andreas A1 - Bonse, Jörn A1 - Giebeler, L. A1 - Koitzsch, A. A1 - Kunz, C. A1 - Weber, H. A1 - Hufenbach, J.K. A1 - Müller, F.A. A1 - Gräf, S. T1 - Formation of laser-induced periodic surface structures on Zr-based bulk metallic glasses with different chemical composition N2 - Bulk metallic glasses (BMG) are amorphous metal alloys known for their unique physical and mechanical properties. In the present study, the formation of femtosecond (fs) laser-induced periodic surface structures (LIPSS) on the Zr-based BMGs Zr46Cu46Al8, Zr61Cu25Al12Ti2, Zr52.5Cu17.9Al10Ni14.6Ti5 (Vit105) and Zr57Cu15.4Al10Ni12.6Nb5 (Vit106) was investigated as a function of their different chemical composition. For this purpose, LIPSS were generated on the sample surfaces in an air environment by fs-laser irradiation (λ = 1025 nm, τ = 300 fs, frep = 100 kHz). The surface topography was characterized by scanning electron microscopy and atomic force microscopy. Moreover, the impact of LIPSS formation on the structure and chemical surface composition was analyzed before and after fs-laser irradiation by X-ray diffraction and X-ray photoelectron spectroscopy as well as by transmission electron microscopy in combination with energy dispersive X-ray spectroscopy. Despite the different chemical composition of the investigated BMGs, the fs-laser irradiation resulted in almost similar properties of the generated LIPSS patterns. In the case of Zr61Cu25Al12Ti2, Vit105 and Vit106, the surface analysis revealed the preservation of the amorphous state of the materials during fs-laser irradiation. The study demonstrated the presence of a native oxide layer on all pristine BMGs. In addition, fs-laser irradiation results in the formation of laser-induced oxide layers of larger thickness consisting of an amorphous ZrAlCu-oxide. The precise laser-structuring of BMG surfaces on the nanoscale provides a versatile alternative to thermoplastic forming of BMG surfaces and is of particular interest for the engineering of functional material surfaces. KW - Bulk metallic glasses KW - Femtosecond laser KW - Laser-induced periodic surface structures (LIPSS) KW - Chemical analysis KW - Oxidation PY - 2023 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-581799 DO - https://doi.org/10.1016/j.surfin.2023.103305 SN - 2468-0230 VL - 42 SP - 1 EP - 11 PB - Elsevier B.V. AN - OPUS4-58179 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Minenkov, Alexey A1 - Hollweger, Sophia A1 - Duchoslav, Jiri A1 - Erdene-Ochir, Otgonbayar A1 - Weise, Matthias A1 - Ermilova, Elena A1 - Hertwig, Andreas A1 - Schiek, Manuela T1 - Monitoring the Electrochemical Failure of Indium Tin Oxide Electrodes via Operando Ellipsometry Complemented by Electron Microscopy and Spectroscopy N2 - Transparent conductive oxides such as indium tin oxide (ITO) are standards for thin film electrodes, providing a synergy of high optical transparency and electrical conductivity. In an electrolytic environment, the determination of an inert electrochemical potential window is crucial to maintain a stable material performance during device operation. We introduce operando ellipsometry, combining cyclic voltammetry (CV) with spectroscopic ellipsometry, as a versatile tool to monitor the evolution of both complete optical (i.e., complex refractive index) and electrical properties under wet electrochemical operational conditions. In particular, we trace the degradation of ITO electrodes caused by electrochemical reduction in a pH-neutral, water-based electrolyte environment during electrochemical cycling. With the onset of hydrogen evolution at negative bias voltages, indium and tin are irreversibly reduced to the metallic state, causing an advancing darkening, i.e., a gradual loss of transparency, with every CV cycle, while the conductivity is mostly conserved over multiple CV cycles. Post-operando analysis reveals the reductive (loss of oxygen) formation of metallic nanodroplets on the surface. The reductive disruption of the ITO electrode happens at the solid–liquid interface and proceeds gradually from the surface to the bottom of the layer, which is evidenced by cross-sectional transmission electron microscopy imaging and complemented by energy-dispersive X-ray spectroscopy mapping. As long as a continuous part of the ITO layer remains at the bottom, the conductivity is largely retained, allowing repeated CV cycling. We consider operando ellipsometry a sensitive and nondestructive tool to monitor early stage material and property changes, either by tracing failure points, controlling intentional processes, or for sensing purposes, making it suitable for various research fields involving solid–liquid interfaces and electrochemical activity. KW - General Materials Science PY - 2024 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-597625 DO - https://doi.org/10.1021/acsami.3c17923 SN - 1944-8252 VL - 16 IS - 7 SP - 9517 EP - 9531 PB - American Chemical Society (ACS) AN - OPUS4-59762 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas A1 - François, P. T1 - ELENA Project: Creating a simplified uncertainty calculation for industrial applications N2 - In this workpackage of the ELENA project, we develop a way to express the measurement uncertainty of nanoscale determination of electrical propserties. The method developed aims to be usable for industrial contexts and described in technical documents and standards drafts. Standards and reference samples are used to make traceable measurements available for the end user. T2 - Congrès International de Metrologie CY - Lyon, France DA - 06.03.2023 KW - Nanoscale measurements KW - Electrical properties KW - Optical measurements KW - Surfaces KW - Scanning probe measurements PY - 2023 AN - OPUS4-57155 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Grundmann, Jana A1 - Bodermann, Bernd A1 - Ermilova, Elena A1 - Weise, Matthias A1 - Hertwig, Andreas A1 - Klapetek, Petr A1 - Rafighdoost, Jila A1 - Pereira, Silvania F. T1 - Optical and tactile measurements on SiC sample defects N2 - Abstract. In power electronics, compound semiconductors with large bandgaps, like silicon carbide (SiC), are increasingly being used as material instead of silicon. They have a lot of advantages over silicon but are also intolerant of nanoscale material defects, so that a defect inspection with high accuracy is needed. The different defect types on SiC samples are measured with various measurement methods, including optical and tactile methods. The defect types investigated include carrots, particles, polytype inclusions and threading dislocations, and they are analysed with imaging ellipsometry, coherent Fourier scatterometry (CFS), white light interference microscopy (WLIM) and atomic force microscopy (AFM). These different measurement methods are used to investigate which method is most sensitive for which type of defect to be able to use the measurement methods more effectively. It is important to be able to identify the defects to classify them as critical or non-critical for the functionality of the end product. Once these investigations have been completed, the measurement systems can be optimally distributed to the relevant defects in further work to realize a hybrid analysis of the defects. In addition to the identification and classification of defects, such a future hybrid analysis could also include characterizations, e.g. further evaluation of ellipsometric data by using numerical simulations. KW - Compound semiconductors KW - Hybrid metrology KW - Material defects KW - Spectroscopic ellipsometry KW - Scanning probe microscopy KW - White-light interference microscopy PY - 2024 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-601220 DO - https://doi.org/10.5194/jsss-13-109-2024 SN - 2194-878X VL - 13 IS - 1 SP - 109 EP - 121 PB - Copernicus Publ. CY - Göttingen AN - OPUS4-60122 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Characterisation of thin layers of Polydopamine used as functional coatings in X-Ray optics N2 - Polydopamine (PDA) is a biological / biomimetic polymer which has spiked considerable interest in recent years. Its monomer is an important neurotransmitter and it is one of the strongest glues produced by biological organisms. Polydopamine is a candidate for several applications, mainly in the field of biology and medicine, but also - recently - for layer coatings with optical, electrical, and mechanical function. In this work, we investigate PDA layers intended as reflectivity enhancers for mirror surfaces in X-ray astronomical observatories. It has previously been shown, that such X-ray telescopes can be improved by a coating of PDA in the thickness range of several nm. Accurate thickness determination is required to monitor and optimise the coating process. We use spectroscopic ellipsometry to determine first the dielectric function of the polydopamine layers using model coatings of sufficient thickness. This data is then used to accurately determine the layer thickness of much thinner PDA layers. This study resulted in data on the thickness and dielectric function of PDA layers that could lead to a better understanding of the correlation of layer thickness and layer properties depending on the process parameters. T2 - Deutsche Physikalische Gesellschaft - Frühjahrstagung CY - Berlin, Germany DA - 17.03.2024 KW - Polydopamine KW - Thin Solid Layers KW - X-ray optics KW - Spectroscopic Ellipsometry PY - 2024 AN - OPUS4-60955 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Neue Methoden in der Dünnschichtmesstechnik für mikroelektronische Anwendungen durch Mapping- und Imaging-Ellipsometrie T2 - OptecBB Handlungsfeldkonferenz CY - Berlin, Deutschland DA - 2014-06-27 PY - 2014 AN - OPUS4-32030 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Metrologie für die Dünnschicht- und Nanotechnologie Neue Anwendungen für optische Oberflächenmessungen T2 - Göttinger Messtechnisches Symposium CY - Göttingen, Deutschland DA - 2014-07-16 PY - 2014 AN - OPUS4-32031 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Schick, D. A1 - Herzog, M. A1 - Bojahr, A. A1 - Leitenberger, W. A1 - Hertwig, Andreas A1 - Shayduk, R. A1 - Bargheer, M. T1 - Ultrafast lattice response of photoexcited thin films studied by X-ray diffraction N2 - Using ultrafast X-ray diffraction, we study the coherent picosecond lattice dynamics of photoexcited thin films in the two limiting cases, where the photoinduced stress profile decays on a length scale larger and smaller than the film thickness. We solve a unifying analytical model of the strain propagation for acoustic impedance-matched opaque films on a semi-infinite transparent substrate, showing that the lattice dynamics essentially depend on two parameters: One for the spatial profile and one for the amplitude of the strain. We illustrate the results by comparison with high-quality ultrafast X-ray diffraction data of SrRuO3 films on SrTiO3 substrates. KW - Festkörperphysik KW - Dünnschichttechnik KW - Ellipsometrie KW - Röntgenbeugung KW - Optische Konstanten PY - 2014 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-322471 DO - https://doi.org/10.1063/1.4901228 SN - 2329-7778 VL - 1 IS - 6 SP - 064501-1 - 064501-13 PB - AIP Publishing LLC CY - Melville, NY AN - OPUS4-32247 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Pourjamal, S. A1 - Mäntynen, H. A1 - Jaanson, P. A1 - Rosu, Dana Maria A1 - Hertwig, Andreas A1 - Manoocheri, F. A1 - Ikonen, E. T1 - Characterization of thin-film thickness N2 - Analysis methods and instrumentation for obtaining optical parameters and thickness profiles of thin-film samples from spectrophotometric and ellipsometric measurements are presented. Measured samples include thermally grown and evaporated SiO2 on a silicon substrate and a polymer photoresist layer on silicon. Experimental results at multiple sample positions give the thickness uniformity and optical constants of thin films. The thickness results obtained with spectrophotometry and ellipsometry agree within 1 nm for the 300 nm thick layer of SiO2 on silicon. For the 1600 nm thick resist sample the agreement of the measurement methods is within 8 nm. For the sample with a nominally 6000 nm thick layer of SiO2 on silicon, there is a deviation of ~100 nm between the spectrophotometry and ellipsometry results. As an application, the optical parameters of a SiO2 layer on an induced junction silicon photodiode are determined by spectrophotometry and are used to confirm earlier values and uncertainties of the SiO2 refractive index and layer thickness non-uniformity. KW - Index of refraction KW - Thin-film thickness KW - Silicon dioxide KW - Spectrophotometry KW - Ellipsometry KW - Silicon photodiode PY - 2014 DO - https://doi.org/10.1088/0026-1394/51/6/S302 SN - 0026-1394 SN - 1681-7575 VL - 51 IS - 6 SP - S302 EP - S308 PB - Inst. of Physics Publ. CY - Bristol AN - OPUS4-32729 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Rosu, Dana Maria A1 - Petrik, P. A1 - Rattmann, G. A1 - Schellenberger, M. A1 - Beck, Uwe A1 - Hertwig, Andreas T1 - Optical characterization of patterned thin films N2 - The present study investigates the use of imaging and mapping ellipsometry to determine the properties of non-ideal and patterned thin film samples. Samples which are candidates for future references and standards were prepared for this purpose. The samples investigated were lithographically patterned SiO2 and photoresist layers. The thickness and the optical constants of the two materials were determined using spectroscopic ellipsometry in the visible spectral range. On a larger lateral scale of several mm lateral resolution, the homogeneity was investigated using a goniospectral rotating compensator ellipsometer. A nulling imaging ellipsometer was used to determine the properties of the sample on a smaller scale of 25–150 µm. KW - Spectroscopic imaging and mapping ellipsometry KW - Inhomogeneous and patterned thin films KW - SiO2 KW - Photoresist KW - Ellipsometrie KW - Patterned films PY - 2014 DO - https://doi.org/10.1016/j.tsf.2013.11.052 SN - 0040-6090 VL - 571 IS - 3 SP - 601 EP - 604 PB - Elsevier CY - Amsterdam AN - OPUS4-32695 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Fischer, Daniel A1 - Hertwig, Andreas A1 - Beck, Uwe A1 - Lohse, V. A1 - Negendank, D. A1 - Kormunda, M. A1 - Esser, N. T1 - Thin SnOx films for surface plasmon resonance enhanced ellipsometric gas sensing (SPREE) N2 - Background: Gas sensors are very important in several fields like gas monitoring, safety and environmental applications. In this approach, a new gas sensing concept is investigated which combines the powerful adsorption probability of metal oxide conductive sensors (MOS) with an optical ellipsometric readout. This concept Shows promising results to solve the problems of cross sensitivity of the MOS concept. Results: Undoped tin oxide (SnOx) and iron doped tin oxide (Fe:SnOx) thin add-on films were prepared by magnetron sputtering on the top of the actual surface plasmon resonance (SPR) sensing gold layer. The films were tested for their sensitivity to several gas species in the surface plasmon resonance enhanced (SPREE) gas measurement. It was found that the undoped tin oxide (SnOx) shows higher sensitivities to propane (C3H8) then to carbon monoxide (CO). By using Fe:SnOx, this relation is inverted. This behavior was explained by a change of the amount of binding sites for CO in the layer due to this iron doping. For hydrogen (H2) no such relation was found but the sensing ability was identical for both layer materials. This observation was related to a different sensing mechanism for H2 which is driven by the Diffusion into the layer instead of adsorption on the surface. Conclusion: The gas sensing selectivity can be enhanced by tuning the properties of the thin film overcoating. A relation of the binding sites in the doped and undoped SnOx films and the gas sensing abilities for CO and C3H8 was found. This could open the path for optimized gas sensing devices with different coated SPREE sensors. KW - Doped tin oxide KW - Ellipsometry KW - Gas sensing KW - Surface plasmon KW - Resonance KW - Thin films KW - Transparent conductive oxides PY - 2017 DO - https://doi.org/10.3762/bjnano.8.56 SN - 2190-4286 VL - 8 SP - 522 EP - 529 AN - OPUS4-39391 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Characterisation of Non-ideal Samples with Spectroscopic Mapping and Imaging Ellipsometry T2 - Workshop Quantitative 3D-Mikroskopie von Oberflächen CY - Braunschweig, Germany DA - 2015-04-28 PY - 2015 AN - OPUS4-33400 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Beck, Uwe A1 - Hertwig, Andreas A1 - Männ, Marion T1 - Ellipsometry and Standardization: Validation of Models - Key Issue for Reference Coatings and Non-ideal Samples N2 - Standardisation of ellipsometry is mainly based on three documents: pioneering work at NIST [1] on film standards, a publicly available specification and stan-dard testing procedure [2] for real-world samples by BAM and a standard specification for integrated metrology by SEMI [3]. Other activities refer to inter-laboratory comparisons for selected layer/substrate systems and analytical methods including ellipsometry [4] and the development of combined standards for thickness d and step height h [5]. Generally, precision of ellipsmetry in terms of raw data Ψ and Δ meets the major demands for all ellipsometric principles (RPE, RAE, PME, RCE, NE). As a result, fingerprint capabilty is al-most perfect for various layer/substrate systems. However, this is not true for accuracy in terms of physical quantities such as thickness d, optical (n, k) and dielectric constans (ε1, ε2,) as modelling is required. Hence, the layer/substrate and material dependent validation of models is nowadays a key issue. In contrast to the sub-nanometer sensi-tivity in vertical direction, the effective lateral resolution of almost all ellipso-metric principles except for imaging null ellipsometry is rather poor, usually be-yond 100 µm. Hence, nanometer-scaled homogeneity testing and the measurement of micro- and nanopatterned structures is not feasible by standard configurations. KW - Ellipsometry KW - Standardisation KW - Reference Coatings KW - Non-ideal samples KW - Validation of models PY - 2008 IS - 2 SP - 6 EP - 7 AN - OPUS4-18673 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Krüger, Hannes A1 - Kemnitz, E. A1 - Hertwig, Andreas A1 - Beck, Uwe T1 - Transparent MgF2-films by sol-gel coating: Synthesis and optical properties N2 - Dielectric, anti-reflective or high reflective systems consist of low and high refractive index layers. Common systems are oxides. The preparation of low refractive index MgF2-films of optical quality by means of an anhydrous low temperature sol–gel synthesis is presented. The MgF2-sol is prepared by spin-coating on silicon and glass substrates. Various film thicknesses between 20 nm and 435 nm have been deposited. It has been shown that the thickness increase is proportional to the number of coating steps. The deposited MgF2-films consist of 10 nm to 20 nm large nanoparticles and have smooth surfaces with an average roughness (Ra) of (1.7 ± 0.3) nm. The optical constants n and k of the films are in agreement with the literature data of bulk-MgF2. KW - Sol-gel KW - Nano-MgF2 KW - Spin coating KW - Optical properties KW - Nanoparticles PY - 2008 DO - https://doi.org/10.1016/j.tsf.2007.10.126 SN - 0040-6090 VL - 516 IS - 12 SP - 4175 EP - 4177 PB - Elsevier CY - Amsterdam AN - OPUS4-17375 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Rybachuk, Maksym A1 - Hertwig, Andreas A1 - Weise, Matthias A1 - Sahre, Mario A1 - Männ, Marion A1 - Beck, Uwe A1 - Bell, J. M. T1 - Near infrared optical materials from polymeric amorphous carbon synthesized by collisional plasma process N2 - The synthesis of polymerlike amorphous carbon (a-C:H) thin-films by microwave excited collisional hydrocarbon plasma process is reported. Stable and highly aromatic a-C:H were obtained containing significant inclusions of poly(p-phenylene vinylene) (PPV). PPV confers universal optoelectronic properties to the synthesized material. That is a-C:H with tailor-made refractive index are capable of becoming absorption-free in visible (red)-near infrared wavelength range. Production of large aromatic hydrocarbon including phenyl clusters and/or particles is attributed to enhanced coagulation of elemental plasma species under collisional plasma conditions. Detailed structural and morphological changes that occur in a-C:H during the plasma synthesis are also described. KW - Kohlenstoffschichten KW - Plasmachemie KW - PA-CVD KW - Amorphous state KW - Carbon KW - Coagulation KW - Hydrogen KW - Optical materials KW - Plasma collision processes KW - Plasma deposition KW - Refractive index KW - Thin films PY - 2010 DO - https://doi.org/10.1063/1.3431292 SN - 0003-6951 SN - 1077-3118 VL - 96 IS - 21 SP - 211909-1 - 211909-3 PB - American Institute of Physics CY - Melville, NY AN - OPUS4-21365 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Krüger, Hannes A1 - Hertwig, Andreas A1 - Beck, Uwe A1 - Kemnitz, E. T1 - Low temperature sol-gel metal oxide and fluoride layer stacks for optical applications N2 - MgF2 and TiO2 single layers and layer stacks were produced by a spin-coating sol-gel process. The final temperature treatment was carried out at 100 °C. The layers were deposited onto silicon and fused silica substrates and were analysed by means of atomic force microscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, ellipsometry, and UV-vis transmission spectroscopy. MgF2 and TiO2 single layers have morphological and optical properties comparable with physical vapour deposited layers. By using spectroscopic mapping ellipsometry, a good inter- and intra-sample homogeneity was confirmed. Multiple deposition steps result in a linear increase of layer thickness. Various films were deposited with thicknesses between 25 nm and 350 nm. It was shown that the low temperature sol-gel process results in films of optical quality. Anti-reflective and high reflective layer stacks consisting of MgF2 and TiO2 were designed and can be produced now by a sol-gel process, whereas the MgF2 layers in the layer stacks contains also traces of MgF2-2xOx. KW - Magnesium fluoride KW - Titanium oxide KW - Sol-gel KW - Spin-coating KW - Optical properties KW - Optical layer stacks KW - MgF2 KW - TiO2 PY - 2010 DO - https://doi.org/10.1016/j.tsf.2010.06.025 SN - 0040-6090 VL - 518 IS - 21 SP - 6080 EP - 6086 PB - Elsevier CY - Amsterdam AN - OPUS4-21516 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Reference coatings for thin film technology - beyond the state of the art T2 - 6th Workshop Ellipsometry CY - Berlin, Germany DA - 2011-02-02 PY - 2011 AN - OPUS4-23064 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Krüger, Hannes A1 - Kemnitz, E. A1 - Hertwig, Andreas A1 - Beck, Uwe T1 - Moderate temperature sol-gel deposition of magnesium fluoride films for optical UV-applications: A study on homogeneity using spectroscopic ellipsometry N2 - Thin films of MgF2 have been deposited on silicon wafers in optical quality with a novel sol-gel deposition process at temperatures as low as 100 °C. The properties of the fluoride layers are compared to bulk MgF2 with respect to the optical constants. By employing spectroscopic mapping ellipsometry, the uniformity of the thickness of fluoride layers is confirmed to be within acceptable limits for optical applications. The optical constants are close to the bulk data. High-quality low-index films of suitable and homogeneous thickness have already been produced on a laboratory scale. KW - 78.20.-e KW - 78.66.Li KW - 78.68.+m KW - 81.20.Fw PY - 2008 DO - https://doi.org/10.1002/pssa.200777856 SN - 1862-6300 SN - 0031-8965 VL - 205 IS - 4 SP - 821 EP - 824 PB - Wiley-VCH CY - Berlin AN - OPUS4-17330 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Optical vs. mivroscopic properties of ECR and RF bias generated amoephous hydrogenated carbon films T2 - PSE CY - Garmisch-Partenkirchen, Germany DA - 2010-09-13 PY - 2010 AN - OPUS4-20869 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Koter, Robert A1 - Weise, Matthias A1 - Hertwig, Andreas A1 - Beck, Uwe A1 - Krüger, Jörg T1 - Influence of film thickness and optical constants on femtosecond laser-induced ablation of hydrogenated amorphous carbon films N2 - Hydrogenated amorphous carbon layers were deposited on BK7 glass in a plasma-assisted chemical vapor deposition process. Low and high refracting films with thicknesses d ranging from 11 nm to 5.8 µm were produced having refractive indices n between 1.68 and 2.41 and linear absorption coefficients of α~100 cm-1 and α~20000 cm-1 at 800 nm wavelength as a result of different plasma modes. Laser ablation thresholds Fth in dependence on d were determined using 30-fs laser pulses. Low absorbing layers show a constant Fth while Fth increases with rising d up to the optical penetration depth of light α-1 for high absorbing films. KW - Physical radiation damage (61.80.-x) KW - Laser-beam impact phenomena (79.20.Ds) KW - Radiation treatment (81.40.Wx) KW - Carbon (81.05.Uw) KW - Optical constants (78.20.Ci) PY - 2010 SN - 1454-4164 VL - 12 IS - 3 SP - 663 EP - 667 PB - INOE & INFM CY - Bucharest AN - OPUS4-21084 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -