TY - CONF A1 - Hertwig, Andreas T1 - Calibration samples and the GUM-compliant determination of uncertainties in ellipsometry N2 - Ellipsometry is well known as a highly sensitive and reproducible surface analysis technique. However, in a context of metrological applications, the most important property of a measurement process is accuracy, relying on statistical precision, (reproducibility) and trueness (in an absolute sense versus a given standard). The latter is much more difficult to achieve. In this presentation, we discuss the possibility of establishing ellipsometry in a diverse metrological landscape by means of defining standard procedures and best practice methodologies for the measurement and for calibration purposes. The most important task of this approach is to determine the model-inherent uncertainty, originating from parameter coupling. We achieve this by means of sensitivity analysis of the parameters resulting from the fit process. We discuss the definition of reference materials by which accuracy can be made available for ellipsometry, passed along between ellipsometry laboratories and for other measurement techniques. The determination of uncertainty is presented in this work for a number of examples involving difficult analysis models employed for samples from different production environments. We present a standardization initiative with the goal to disseminate this work into an international standard alongside an inter-laboratory study comparing the results for complex samples gained by laboratories with different instrumentation. We also present the results gained within EURAMET projects focused on the metrology of materials with strong non-idealities used in photovoltaics and other energy technology. T2 - Workshop Ellipsometry 2018 CY - Chemnitz, Germany DA - 19.03.2018 KW - Ellipsometric metrology KW - Reference samples KW - Reference procedures KW - Standardization PY - 2018 AN - OPUS4-44674 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hertwig, Andreas A1 - Hinrichs, K. A1 - Beck, Uwe A1 - Esser, N. T1 - Editorial to the proceedings of the 7th conference on spectroscopic N2 - The 7th International Conference on Spectroscopic Ellipsometry (ICSE-7) was held in Berlin in June 2016, jointly organised by ICSE and BAM. The publication of the proceedings special issue in Applied Surface Science follows this event. In the special issue, about 100 articles on current topics of optics and surface science related to ellipsometry, polarimetry, and similar techniques are presented, underpinning the high significance of these techniques for many fields of materials science. T2 - 7th International Conference on Spectroscopic Ellipsometry, ICSE-7 CY - Berlin, Germany DA - 06.06.2016 KW - Spectroscopic ellipsomety PY - 2017 DO - https://doi.org/10.1016/j.apsusc.2017.04.081 SN - 0169-4332 VL - 2017 IS - 421 SP - 269 EP - 270 PB - Elsevier B.V. AN - OPUS4-42554 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Standardised and referenced surface analysis with ellipsometry - Is ellipsometry a metrological tool? N2 - Ellipsometry is a valuable surface analysis tool with an unmatched sensitivity towards surface layer properties. In this presentation, an initiative is discussed to make ellipsometry also a metrological tool. This is usually seen as very difficult due to the model-based nature of the analysis process. By establishing standardisation and reference materials, ellipsometry can be made traceable and can also become a valuable part of the traceable thin film metrology landscape. This is important because this technique has much potential to determine complex material parameters much needed in the production of high-tech products. T2 - University (UNL), Engineering Department CY - Lincoln, Nebraska, USA DA - 06.11.2017 KW - Metrology KW - Spectroscopic Ellipsometry KW - Reference Materials KW - Traceability KW - Measurement Uncertainty PY - 2017 AN - OPUS4-43412 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Jensen, S. A. A1 - Rosu, Dana Maria A1 - Hertwig, Andreas A1 - Hansen, P.-E. T1 - Use of Rayleigh-Rice Theory for Analysis of Ellipsometry Data on Rough CIGS Films N2 - Ellipsometry is a useful tool for studying the optical properties of thin films such as photovoltaic devices. We employ Müller matrix ellipsometry to study the thin film photovoltaic material copper indium gallium selenide Cu(In,Ga) Se2 (CIGS), a commercially relevant material with high energy conversion efficiency. Confocal microscopy reveals an rms roughness of 68 nm, which greatly affects the ellipsometry data. Rayleigh-Rice theory is employed to account for the optical properties of the surface roughness in the ellipsometry experiment, and a library search method is used to compare Müller parameters calculated for various CIGS compositions, to the measured data. The Müller parameters calculated with the Rayleigh-Rice model are found to correspond well with the measured data, and a surface roughness of 37nm and a correlation length of 125nm are extracted. KW - Photovoltaics KW - Thin Films KW - Ellipsometry KW - Scattering Theory KW - Optical Wavefield KW - Simulation KW - Müller Polarimetry KW - Multidimensional Spectroscopy PY - 2017 DO - https://doi.org/10.1002/pssc.201700217 SN - 1862-6351 VL - 14 IS - 12 SP - 1700217, 1 EP - 5 PB - WILEY-VCH Verlag GmbH & Co. KGaA CY - Weinheim AN - OPUS4-43390 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Multi-methods surface analysis involving spectroscopic ellipsometry: New measurements for optical and energy applications N2 - Surface analysis is still gaining importance, as most modern technology is in essence surface and thin film technology. In microelectronics and optics but also in many fields of energy storage and conversion, thin surface layers or structured surfaces are key components. Optical surface measurements are useful because of their reliability, robustness, and scalability – properties, which are especially desirable in a production environment. However, many of these methods take require considerable effort in data analysis. Spectroscopic ellipsometry (SE) is maybe the prime example of this class of methods. To combine the advantages of SE with metrological trueness and traceability, we combine it in a group of other methods, such as electron microscopy, instrumental surface analysis, X-ray diffraction. This presentation will give an overview on the principles of SE, its available quantities and the general properties of this measurement technique. Several examples from current and past projects of BAM-6.7 will show how a measurement community involving ellipsometry can benefit many fields of interest, from polymer science to energy applications. In the context of creating a “measurement landscape”, standardisation and standard compliance play an important role. The efforts of BAM in standardisation and accrediting of ellipsometry will be shown demonstrating the possible impact on quality assurance in different fields of technology. T2 - Abteilungskolloquium 2018, BAM CY - BAM, Berlin, Germany DA - 12.12.2018 KW - Spectroscopic ellipsometry KW - Surface analysis KW - Thin film technology KW - Reference materials PY - 2018 AN - OPUS4-47671 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Mezera, Marek A1 - Alamri, S. A1 - Hendriks, W. A. P. M. A1 - Hertwig, Andreas A1 - Elert, Anna Maria A1 - Bonse, Jörn A1 - Kunze, T. A1 - Lasagni, A. F. A1 - Römer, G. R. B. E. T1 - Hierarchical micro-/nano-structures on polycarbonate via UV pulsed laser processing N2 - Hierarchical micro/-nanostructures were produced on polycarbonate polymer surfaces by employing a two-step UV-laser processing strategy based on the combination of Direct Laser Interference Patterning (DLIP) of gratings and pillars on the microscale (3 ns, 266 nm, 2 kHz) and subsequently superimposing Laser-induced Periodic Surface Structures (LIPSS; 7–10 ps, 350 nm, 100 kHz) which adds nanoscale surface features. Particular emphasis was laid on the influence of the direction of the laser beam polarization on the morphology of resulting hierarchical surfaces. Scanning electron and atomic force microscopy methods were used for the characterization of the hybrid surface structures. Finite-difference time-domain (FDTD) calculations of the laser intensity distribution on the DLIP structures allowed to address the specific polarization dependence of the LIPSS formation observed in the second processing step. Complementary chemical analyzes by micro-Raman spectroscopy and attenuated total reflection Fourier-transform infrared spectroscopy provided in-depth information on the chemical and structural material modifications and material degradation imposed by the laser processing. It was found that when the linear laser polarization was set perpendicular to the DLIP ridges, LIPSS could be formed on top of various DLIP structures. FDTD calculations showed enhanced optical intensity at the topographic maxima, which can explain the dependency of the morphology of LIPSS on the polarization with respect to the orientation of the DLIP structures. It was also found that the degradation of the polymer was enhanced for increasing accumulated fluence levels. KW - Direct laser interference patterning KW - Laser-induced periodic surface structures (LIPSS) KW - Polycarbonate KW - Hierarchical structures KW - Surface functionalization PY - 2020 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-509101 DO - https://doi.org/10.3390/nano10061184 SN - 2079-4991 VL - 10(6) IS - Special issue "Laser-generated periodic nanostructures" SP - 1184-1 EP - 1184-19 PB - MDPI CY - Basel AN - OPUS4-50910 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - ELENA: a European project for electrical nanoscale metrology in industry N2 - A competitive advantage in the semiconductors industry is gained through the exploitation of new materials and processes, translating into improved components’ performances. This requires a metrological infrastructure allowing reliable nanoscale characterisation of new materials and devices, particularly in terms of their electrical parameters and properties. Traceability and reliability of nanoscale measurements stand as a major challenge for electrical properties (i.e. resistance, impedance) using conductive atomic force microscopy (C-AFM) and scanning microwave microscopy (SMM) techniques. The non-destructive analysis nature of these two methods is of paramount importance for the characterization of devices and components. However, the state of the art still lacks established measurement protocols, easy to use reference standards, well-defined best practice guides and easy to use 3D models to assess environmental and external stimulation effects. Moreover, costly instrumentation, particularly for high-frequency measurements, still hinders efficient advancements in these directions. ELENA is a 3-years European project that aims at bringing solutions to the aforementioned difficulties. To achieve this goal, the project uses a combination of nanoscale electrodynamic scanning probe methods in combination with optical tools such as spectroscopic ellipsometry on several lateral length scales to determine the electrical properties of layers and small structures. T2 - ICSE-9: The 9th International Conference on Spectroscopic Ellipsometry CY - Beijing, China DA - 2022-05-21 KW - Imaging Ellipsometry KW - Electrical thin layers KW - Scanning Probe methods KW - Hybrid metrology PY - 2022 AN - OPUS4-55464 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - New analytic ways to characterise mesoporous thin layers used in electrocatalytic water splitting N2 - Mesoporous materials are needed in many applications where a high specific surface area and adsorptive behaviour is needed. Important examples are separation techniques and barrier layers and catalysts. Electrochemical water splitting is the key technology for producing green hydrogen and there is no foreseeable alternative to this process for producing elementary hydrogen from green electrical power. Water electrolysis can be divided into the anodic Oxygen Evolution Reaction (OER) and the cathodic Hydrogen Evolution Reaction (HER). Both processes have to be heavily optimised to a large extent to avoid energy losses caused by overvoltage. The development of electrodes for these processes is especially difficult due to the many boundary conditions. Water splitting is a catalytic as well as electrochemical process. The contact area between the electrolyte and the electrode must be maximised maintaining the stability of the surface. Side reactions must be suppressed, and effective gas transport must be ensured. The whole process has to be tolerant with respect to temperature, harsh chemical conditions from the electrolyte as well as high current densities. We present a hybrid analytical method combining several analytical techniques for determining the properties of thin layers of mixed oxides of the general composition Ir:TiOx. These materials are promising candidates for electrocatalytical top coatings of OER electrodes. To lower the costs of the electrolysers, the main goal is to lower the Ir content retaining the system efficiency. The main properties which are hard to determine are the porous volume fraction and the Ir:Ti element ratio. By a combination of electron microscopy, spectroscopic operando ellipsometry, ellipsometric porosimetry, and other techniques, we can determine key features of mesoporous thin layer materials. We aim to develop operando capable techniques used in process monitoring as well as measurement techniques optimised for accuracy. By developing reference materials, we support long term uptake of our methodology. This work can directly be used for optimising electrocatalytic layers and is a good example for the power of hybrid metrology for improving materials design. T2 - International Conference on Resource Chemistry CY - Alzenau, Germany DA - 11.03.2024 KW - Ellipsometry KW - Electrocatalytic Water Splitting KW - Mesoporous Materials KW - Electron Probe Microanalysis KW - Hydrogen Generation PY - 2024 AN - OPUS4-59764 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Ellipsometry as a production measurement tool N2 - Spectroscopic Ellipsometry is an enormously versatile measurement tool for surfaces and thin layers. We discuss the use of ellipsometry in the context of quality control in production processes of eletrconic devices. T2 - Photonics Days Berlin Brandenburg CY - Berlin, Germany DA - 09.10.2023 KW - Ellipsometry KW - Quality control KW - Metrology PY - 2023 AN - OPUS4-59837 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Ellipsometry as a tool for electrical metrology - Referencing electrical properties of thin layers with TCO materials N2 - Ellipsometry is a highly valuable technology for bridging different measurement methods. As a fast, highly sensitive, and non-destructive optical technique with low environmental requirements, it is ideal for transporting measurement accuracy and for up-scaling measurements in the production environment. It can be used for highly precise determination of properties, material identity and correctness confirmation, as well as defect detection. Comparable, traceable, and accurate electrical measurements, especially at small scales are one of the biggest challenges in the development of the electrical and electronic devices of the future. In this project, we develop structured thin layer systems of the transparent conductive material indium tin oxide (ITO) to prove the concept of using these systems as standards for conductivity and permittivity. The layers are produced in a reactive magnetron sputtering process from raw ITO targets with additional oxidation achieved by oxygen injection. We present results of a study correlating the coating process conditions with the properties of the final layer material. We found that especially the temperature development during coating is of key importance and determines the layer properties to a large extent. We will discuss questions of homogeneity and reproducibility of the coating processes used. The finished layers undergo lithographic structuring and etching to produce patterns to serve as reference structures for scanning probe electrical measurements. TCOs have a large variety of applications. In this work we also study the usability of ITO for other purposes and investigate the stability of this material under application conditions. T2 - 12th Workshop Ellipsometry 2023 CY - Prague, Czech Republic DA - 18.09.2023 KW - Thin Films KW - Transparent Conductive Oxides KW - Ellipsometry KW - Electrical Properties KW - Nanoelectronics PY - 2023 AN - OPUS4-58410 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - On the use of spectroscopic imaging ellipsometry for quantification and characterisation of defects in thin films for power electronics N2 - Compound semiconductors (CS) are promising materials for the development of high-power electrical applications. They have low losses, can withstand high temperatures and can operate at very high voltages and currents. This makes them a key technology for the electrification of many high energy applications, especially electromobility and HVDC power lines. The challenge with CS technology is that most of the process technology has to be developed anew to the high standards required by electronic applications. Today, compound semiconductors can be produced in thin layers on top of substrates fabricated from classical crystal growth processes that are already well established. A promising method for this is metal organic vapour phase epitaxy (MOVPE). With this method, many different compounds with semiconducting properties can be synthesized. Additionally, this process technology is a direct thin layer deposition method. Therefore, complex multilayer systems can be generated directly by the deposition process and without the need of doping after growing. There are a number of critical defects that can originate from the deposition process of these thin film devices. Within this project, we intend to develop new correlative imaging and analysis techniques to determine defect types, to quantify defect size and number density, as well as to characterise defects for process optimisation. We report here on the use of spectroscopic ellipsometry and imaging ellipsometry to investigate defects in several different compound semiconductor materials used in high-power electronic devices. The materials we investigated are β-Ga2O3, SiC, GaN, AlN, and AlGaN materials as well as oxidised SiC surfaces. All of these materials have their typical defects and require optimised measurement and analysis schemes for reliable detection and analysis. Spectroscopic ellipsometry is a highly sensitive method for determining the thicknesses and dielectric function of thin layers, yielding potentially a high number of microscopic properties. The combined method between ellipsometry and optical microscopy is called imaging ellipsometry and is especially powerful for the large amount of data it produces. We have analysed defects in SiC- and AlN-based thin film semiconductors as well as characterised the properties of different types of SiO2 layers created on top of SiC monocrystals. We developed ellipsometric models for the data analysis of the different semiconductor materials. If the defects have geometric features, it is useful to combine the ellipsometric analysis with topometry method like interference microscopy and scanning probe microscopy. We have successfully characterised function-critical defects in MOVPE SiC layers and correlated the findings with topography from WLIM measurements. We have developed an imaging ellipsometric measurement methodology that allows to estimate the relative defect area on a surface by a statistical raw data analysis. T2 - EMRS Spring Meeting 2024 - ALTECH 2024 CY - Strasbourg, France DA - 27.05.2024 KW - compound semiconductors KW - Ellipsometry KW - Layer Materials KW - Defect Analysis PY - 2024 AN - OPUS4-61005 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -