TY - JOUR A1 - Bonse, Jörn A1 - Mann, Guido A1 - Krüger, Jörg A1 - Marcinkowski, M. A1 - Eberstein, M. T1 - Femtosecond laser-induced removal of silicon nitride layers from doped and textured silicon wafers used in photovoltaics N2 - The removal of a 75- to 90-nm-thick passivating silicon nitride antireflection coating from standard textured multicrystalline silicon photovoltaic wafers with a typical diffused 90-Ω/sq-emitter upon irradiation with near-infrared femtosecond laser pulses (790 nm central wavelength, 30 fs pulse duration) is studied experimentally. The laser irradiation areas are subsequently characterized by complementary optical microscopy, scanning electron microscopy and depth profiling chemical analyses using secondary ion mass spectrometry. The results clarify the thin-film femtosecond laser ablation scenario and outline the process windows for selective antireflection coating removal. KW - Photovoltaics KW - Solar cell KW - Laser processing KW - FS-laser ablation KW - Silicon nitride PY - 2013 U6 - https://doi.org/10.1016/j.tsf.2013.07.005 SN - 0040-6090 VL - 542 SP - 420 EP - 425 PB - Elsevier CY - Amsterdam AN - OPUS4-28874 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Eberstein, M. A1 - Geier, M. A1 - Grießmann, H. A1 - Partsch, U. A1 - Voelkel, L. A1 - Böhme, R. A1 - Pentzien, Simone A1 - Koter, Robert A1 - Mann, Guido A1 - Bonse, Jörn A1 - Krüger, Jörg T1 - Towards an industrial laser doping process for the selective emitter using phosphoric acid as dopant N2 - Different laser supported approaches have already been realized, proving the great potential of laserdoped selective emitters (LDSE). However, it is challenging to establish a low-cost process by using pulsed laser tools. So far a single-step process only leads to satisfying results utilizing cw-lasers. In this paper we have examined a two-step process to produce laser-doped selective emitters on multicrystalline textured standard silicon photovoltaic wafers (90-Ω/sq-Emitter, SiN-antireflection coating (ARC)). The precise ARC removal by near-infrared fs-laser pulses (30 fs, 800 nm), and the doping of uncoated silicon wafers by ns-laser pulses (8 ns, 532 nm) were systematically investigated. In the fs-experiment, optimum conditions for ARC removal were identified. In the nsexperiments under suitable conditions (melting regime), the phosphorous concentration underneath the wafer surface was significantly increased and the sheet resistance was reduced by nearly a factor of two. Moreover, electrical measurements on fired metallization fingers deposited on the laser processed wafers showed low contact resistances. Hence, wafer conditioning with combined fs-laser- and ns-laser-processes are expected to be a promising technology for producing selective emitters. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.2011 KW - Laser processing KW - Doping KW - Selective emitter KW - Multicrystalline silicon PY - 2011 SN - 3-936338-27-2 U6 - https://doi.org/10.4229/26thEUPVSEC2011-2BV.1.2 SP - 1220 EP - 1223 AN - OPUS4-24996 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Eberstein, Markus A1 - Mann, Guido A1 - Vogel, Jens A1 - Zoheidi, M. A1 - Krüger, Jörg T1 - Influence of Technological Parameters on Nanosecond Laser-induced Surface Damage of Optical Multimode Fibers N2 - High-power optical multimode fibers are essential components for materials processing and surgery and can limit the reliability of expensive systems due to breakdown at the end faces. The breakdown threshold of fibers is determined by intrinsic materials properties and parameters of the technology applied. The aim of this paper is the identification of technological parameters that are crucial for the fiber quality. Fibers were drawn from preforms of Heraeus SWU with core material F300 and a low amount of OH-. Both, the cladding (fluorine doped SiO2) to core diameter ratio (CCDR) and the drawing speed were varied. CCDR values between 1.05 and 1.4 were used. Afterwards, the laser-induced damage thresholds (LIDT) of the fibers were determined. For comparison, also samples from preforms, which underwent different thermal treatments above the transition temperature, were tested with respect to their damage resistivity. Single and multi pulse LIDT measurements were done in accordance with the relevant ISO standards. Nd:YAG laser pulses with durations of 15 ns (1064 nm wavelength) and 8.5 ns (532 nm) at a repetition rate of 10 Hz were utilized. For the fibers, LIDT values (1-on-1, 1064 nm and 532 nm) increased with growing CCDR and with decreasing drawing velocities. KW - Silica glass KW - Multimode fiber KW - Nanosecond laser KW - Damage threshold PY - 2005 SN - 1022-6680 SN - 1662-8985 VL - 39-40 SP - 225 EP - 230 PB - Trans Tech Publ. CY - Zurich AN - OPUS4-17339 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CHAP A1 - Eberstein, Markus A1 - Zoheidi, M. A1 - Vogel, Jens A1 - Mann, Guido A1 - Krüger, Jörg ED - Wolf, Jonas C. ED - Luka Lange, T1 - Influence of fictive temperature on laser-induced damage of silica glass KW - Silica glass KW - Fictive temperature KW - Multimode fiber KW - Nanosecond laser KW - Damage threshold PY - 2008 SN - 978-1-60456-578-2 IS - Chapter 10 SP - 275 EP - 286 PB - Nova Science Publishers, Inc. CY - New York, USA AN - OPUS4-17903 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Geier, M. A1 - Eberstein, M. A1 - Grießmann, H. A1 - Partsch, U. A1 - Völkel, L. A1 - Böhme, R. A1 - Mann, Guido A1 - Bonse, Jörn A1 - Krüger, Jörg T1 - Impact of laser treatment on phosphoric acid coated multicrystalline silicon PV-wafers N2 - The selective emitter is a well-known technology for producing highly doped areas under the metallization grid to improve the solar cell performance. In this work, the influence of laser irradiation on phosphoric acid coated multicrystalline silicon PV-wafers on the wafer surface structure, the phosphorous depth distribution and the electrical contact resistance within the laser treated area as well as the electrical series resistance of laserprocessed solar cells was evaluated. Different laser processing settings were tested including pulsed and continuous wave (cw) laser sources (515 nm, 532 nm, 1064 nm wavelength). Complementary numerical simulations using the finite element method (FEM) were conducted to explain the impact of the laser parameters on the melting behavior (melt duration and geometry). It was found that the melt duration is a key parameter for a successful laser Doping process. Our simulations at a laser wavelengths of 515 nm reveal that low-repetition rate (<500 kHz) laser pulses of 300 ns duration generate a melt duration of ~0.35 µs, whereas upon scanning cw-laser radiation at 532 nm prolongates the melt duration by at least one order of magnitude. Experimentally, the widely used ns-laser pulses did not lead to satisfying laser irradiation results. In contrast, cw-laser radiation and scan velocities of less than 2 m/s led to suitable laser doping featuring low electrical resistances in the laser treated areas. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.2011 KW - Silicon solar cell KW - Selective emitter KW - Laser processing KW - Doping KW - Simulation PY - 2011 SN - 3-936338-27-2 U6 - https://doi.org/10.4229/26thEUPVSEC2011-2BV.1.7 SP - 1243 EP - 1247 AN - OPUS4-24995 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Mann, Guido A1 - Pentzien, Simone A1 - Krüger, Jörg T1 - Surface damage threshold of multimode fibers and their corresponding preform material for 1064 nm nanosecond laser treatment with varying beam diameter T2 - European Materials Research Society (EMRS) Spring Meeting 2012, Symposium V "Laser Materials Processing for Micro and Nano Application" CY - Strasbourg, France DA - 2012-05-14 PY - 2012 AN - OPUS4-25704 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Mann, Guido A1 - Vogel, Jens A1 - Biberstein, Jens A1 - Krüger, Jörg A1 - Eberstein, Markus T1 - Bestimmung des Wärmeübergangskoeffizienten von Kieselglas in Luft unterhalb Tg mit Unterstützung von FEM T2 - 82. Glastechnische Tagung CY - Hamelin, Germany DA - 2008-05-19 PY - 2008 AN - OPUS4-17513 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Mann, Guido A1 - Zoheidi, M. A1 - Eberstein, Markus A1 - Krüger, Jörg T1 - Influence of core diameter and coating material on nanosecond laser-induced damage threshold of optical multimode fibers T2 - European Materials Research Society (EMRS) Spring Meeting 2009, Symposium Q "Laser and Plasma Processing for Advanced Materials" CY - Strasbourg, France DA - 2009-06-08 PY - 2009 AN - OPUS4-19218 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Mann, Guido A1 - Jurke, Mathias A1 - Zoheidi, M. A1 - Eberstein, M. A1 - Krüger, Jörg T1 - Influence of core diameter and coating material on nanosecond laser-induced damage threshold of optical multicode fibers T2 - 10. Konferenz der ESG und 84. Glastechnische Tagung CY - Magdeburg, Germany DA - 2010-05-30 PY - 2010 AN - OPUS4-20891 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Mann, Guido A1 - Jurke, Mathias A1 - Zoheidi, M. A1 - Eberstein, Markus A1 - Krüger, Jörg T1 - Influence of core diameter and coating material on nanosecond laser-induced damage threshold of optical multimode fibers N2 - Single and multi pulse laser-induced damage thresholds (LIDT) of core, cladding, and coating materials of high-power optical multimode fibers were determined in accordance with ISO 11254 for 532 nm and 1064 nm wavelength in the 10-ns pulse duration regime with spatial Gaussian beam shape. For all-silica fibers, LIDT increases with rising core diameter in a range between 100-600 µm for a constant cladding-core ratio of 1.2. The damage resistance of the low refracting cladding (0.3 % fluorine doped fused silica) is comparable to the undoped SiO2 core. Coating materials show significantly lower LIDT than light-guiding parts of the fibers. KW - Fiber waveguides (42.81.Qb) KW - Physical radiation damage (61.80.-x) KW - Laser-beam impact phenomena (79.20.Ds) KW - Glasses (81.05.Kf) PY - 2010 SN - 1454-4164 VL - 12 IS - 3 SP - 711 EP - 714 PB - INOE & INFM CY - Bucharest AN - OPUS4-21083 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -