TY - CONF A1 - Ermilova, Elena T1 - Development of a standard series for ellipsometry N2 - Ellipsometry is a powerful tool, which allows the investigation of material properties over a broad spectral range. Over the course of several years, the ellipsometry lab at BAM has become an accredited testing lab according to ISO/IEC 17025 laying bare the need of better methods for accuracy and traceability. Despite its wide range of application in both research and development as well as industry, there have been no generally accepted standards dealing with model validation and measurement uncertainties. Based on the first German standard DIN 50989 – 1: 2018 Ellipsometry - Part 1: Principles (currently international standard ISO 23131: 2021) and under consideration of GUM [1] a series of standards for ellipsometry was developed. The entire 6-part series covers several model-based application cases. This standards series avoids having narrow and material specific application cases but instead classifies applications of ellipsometry according to the sample complexity. The concept of ellipsometric transfer quantities (Ψ and Δ or alternatively the elements of transfer matrices) is implemented in the series. For each application case a model-based validation strategy was developed. Thus, the standards are applicable to all materials, instruments and measuring principles. The uniform structure concept of the series facilitates its practical applicability for users. The standards include the model-based GUM-compliant determination/estimation of the measurement uncertainties. In addition, the appendices of the documents contain numerous measurement and simulation examples as well as recommendations for measuring practice. In this contribution we present the application cases and basic structure of the standards developed in collaboration with Accurion GmbH and SENTECH Instruments GmbH in the project SNELLIUS. T2 - 11th Workshop Ellipsometry (WSE 11) CY - Steyr, Austria DA - 06.09.2021 KW - Standardization of ellipsometry KW - DIN 50989 Parts 1 – 6 KW - ISO 23131: 2021 KW - Validation concepts of ellipsometric measurements KW - Uncertainty budgets KW - GUM-compliance PY - 2021 AN - OPUS4-53250 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - RPRT A1 - Beck, Uwe A1 - Ermilova, Elena A1 - Schneider, S. A1 - Peters, S. T1 - Gemeinsamer Abschlussbericht WIPANO-Vorhaben „Standardisierung und Normung der Ellipsometrie als universeller Spektroskopie“ N2 - Im Vorhaben SNELLIUS wurden in enger Zusammenarbeit der BAM mit den Firmen Accurion und SENTECH Instruments aufbauend auf der Norm DIN 50989-1 „Ellipsometrie - Teil 1: Grundlagen; Ellipsometry – Part 1: Principles“ insgesamt fünf Normenentwürfe erarbeitet, die fünf Modell-basierten Anwendungsfällen der Ellipsometrie entsprechen. Unter Berücksichtigung des neuartigen Modell-basierten Normungskonzepts wurde in den Normenentwürfen erstmals eine GUM- und DIN EN ISO/IEC 17025:2018 konforme Bestimmung bzw. Abschätzung der Messunsicherheit umgesetzt. Dies erforderte neben der textlichen Erstellung auch umfangreiche experimentelle Arbeiten bei den Firmen, Vergleichsversuche und komplementäre Modell- und Datenevaluierungen, da sowohl die verwendete ellipsometrische Hardware (unterschiedliche ellipsometrische Funktionsprinzipien) als auch die ellipsometrische Software (Modell-Randbedingungen, Fitalgorithmus) firmenspezifisch zum Teil sehr unterschiedlich sind. Hierbei mussten in einem Konsensprozess Lösungen gefunden werden, die die beiden deutschen Ellipsometer-Anbieter Accurion (Imaging-Ellipsometrie) und SENTECH Instruments (Mapping Ellipsometrie) gleichermaßen akzeptieren konnten und die zudem einen Transfer auf die Internationale Ebene (ISO Norm) ermöglichen, also vom Grundsatz her auch auf weitere Ellipsometerhersteller wie (J. A. Woollam Co., USA; SEMILAB, Ungarn; HORIBA, Japan) mit wieder anderen ellipsometrischen Funktionsprinzipien, Hard- und Softwarelösungen anwendbar sind. Die weitgehende Unabhängigkeit von ellipsometrischen Funktionsprinzipien, Hard- und Softwarelösungen wurde dadurch erreicht, dass normativ festgelegt wurde, dass die ellipsometrischen Größen PSI und DELTA im Sinne von DIN ENISO/IEC 17025 als Rohdaten fungieren. KW - Ellipsometrie-Norm KW - Messunsicherheit ellipsometrischer Messungen KW - Validierungskonzepte ellipsometrischer Messungen KW - DIN 50989, Teile 1 bis 6 KW - DIN EN ISO/IEC 17025:2018 und GUM Kompatibilität PY - 2021 SP - 1 EP - 16 AN - OPUS4-52857 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Ermilova, Elena A1 - Weise, Matthias A1 - Hertwig, Andreas T1 - Application of imaging ellipsometry and white light interference microscopy for detection of defects in epitaxially grown 4H-SiC layers N2 - Critical defects, also known as device killers, in wide bandgap semiconductors significantly affect the performance of power electronic devices. We used the methods imaging ellipsometry (IE) and white light interference microscopy (WLIM) in a hybrid optical metrology study for fast and non-destructive detection, classification, and characterisation of defects in 4H–SiC homoepitaxial layers on 4H–SiC substrates. Ellipsometry measurement results are confirmed by WLIM. They can be successfully applied for wafer characterisation already during production of SiC epilayers and for subsequent industrial quality control. T2 - EOS Annual Meeting (EOSAM 2022) CY - Porto DA - 12.09.2022 KW - Imaging ellipsometry KW - White light interference microscopy KW - 4H–SiC KW - Defects PY - 2023 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-574209 DO - https://doi.org/10.1051/jeos/2023018 SN - 1990-2573 VL - 19 IS - 1 SP - 1 EP - 8 PB - EDP Sciences AN - OPUS4-57420 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Ermilova, Elena T1 - Hybrid measurement technique for defect characterisation in wide bandgap semiconductors N2 - Climate change and increasing demand for electricity require the use of power electronics based on new wide bandgap (WBG) compound semiconductors. Power electronics devices are used in numerous application areas to control and convert electric energy. These may include generation and distribution of renewable energy for green hydrogen, electrification of transport or 5G communication. WBG electronics have much higher efficiency than the silicon-based ones and can operate at higher power densities, voltages, temperatures and switching frequencies with low energy losses. However, defects in the semiconductors can considerably affect the performance of power electronic devices or make their operation even impossible. The presentation will show the application of spectroscopic and imaging ellipsometry as well as white light interference microscopy for defect characterisation in SiC, GaN and Ga2O3 over a wide wavelength range. We used parameterized modelling of ellipsometric transfer parameters to determine the dielectric properties of bulk materials and thin layers. Imaging ellipsometry offers more information and is an advanced variant of optical microscopy, combining the lateral resolution of optical microscopy with the extreme sensitivity to surface and interface effects of ellipsometry. Surface topography and morphology of different types of defects were additionally investigated with imaging white light interference microscopy. Modern electronic thin film components require complex surface analysis methodologies and hybrid metrology. Hybrid measurement techniques enable fast and non-destructive traceable characterisation of thin film compound semiconductors as well as accurate detection and identification of defects. This methodical approach leads to a better understanding of the materials themselves and of the defect formation mechanisms during manufacturing. This work aims to enable highly reproducible manufacturing of compound semiconductor power electronics as well as operation monitoring to ensure failure-safety of electronic systems in power electronic devices. T2 - Abteilungskolloquium 2023, BAM CY - Berlin, Germany DA - 09.02.2023 KW - Spectroscopic and imaging ellipsometry KW - White light interference microscopy KW - Wide bandgap semiconductors KW - Surface analysis, PY - 2023 AN - OPUS4-59443 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Grundmann, Jana A1 - Ermilova, Elena A1 - Hertwig, Andreas A1 - Klapetek, Petr A1 - Pereira, Silvania F. A1 - Rafighdoost, Jila A1 - Bodermann, Bernd T1 - Optical and Tactile Measurements on SiC Sample Defects N2 - The different defect types on SiC samples are measured with various measurement methods including optical and tactile methods. The defect types investigated include particles, carrots and triangles and they are analyzed with imaging ellipsometry, coherent Fourier scatterometry and atomic force microscopy. Each of these methods measures different properties of the defects and they all together contribute to a complete analysis. T2 - SMSI 2023 - Sensor and Measurement Science International CY - Nuremberg, Germany DA - 08.05.2023 KW - Defects KW - Silicon carbide KW - Imaging ellipsometry KW - Atomic force microscopy KW - Coherent Fourier scatterometry PY - 2023 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-593397 SN - 978-3-9819376-8-8 DO - https://doi.org/10.5162/SMSI2023/D5.2 VL - 2023/D5 SP - 233 EP - 234 PB - AMA Service CY - Wunstorf AN - OPUS4-59339 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Ermilova, Elena T1 - Imaging spectroscopic ellipsometry for investigation of energy materials and materials for nano-electronics N2 - Ellipsometry is a very powerful tool used for accurate material investigation in a wide wavelength range. It is a non-destructive and fast method. Imaging ellipsometry as a combination of optical microscopy and ellipsometry enables spatially resolved measurements when determining the layer thickness and dielectric properties of thin layers. It is known for its high polarisation sensitivity and high contrast for the surface structures. In this contribution we show the application of the imaging ellipsometry for detection of defects in energy materials and quality validation of possible reference materials for nano-electronics. Defects in wide bandgap semiconductors, in homoepitaxial SiC and heteroepitaxial GaN layers on transparent SiC substrates, can be successfully detected and classified by means of imaging ellipsometry. Correlation of imaging ellipsometry results with results from complementary techniques such as white light interference microscopy as well as atomic force microscopy contribute to understanding of surface topography and defect formation mechanisms. We discuss the potential of different methods for analysing ellipsometric map data for monitoring the defect densities. Electric properties of materials at the nanoscale can be investigated by means of scanning probe microscopy methods such as scanning microwave microscopy and conductive atomic force microscopy. However, development of new robust and easy-to-use calibration methods and calibration standards is essential to increase the traceability of these methods and allow their broad application in industry. We show how imaging spectroscopic ellipsometry can be used for development and monitoring of processing quality of patterned reference samples based on indium tin oxide (ITO) layer with different thickness and conductivity. T2 - 12th Workshop on Spectroscopic Ellipsometry (WSE) CY - Prague, Czech Republic DA - 18.09.2023 KW - Ellipsometry KW - Thin Films KW - Transparent Conductive Oxides KW - Energy materials KW - White light interference microscopy KW - Nanoelectronics KW - Wide-bandgap semiconductors PY - 2023 AN - OPUS4-59340 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Ermilova, Elena T1 - Modell based ellipsometry standards for different application cases and their application for real non-ideal systems N2 - Ellipsometry enables the investigation of material properties over a broad spectral range. As a fast and non-destructive method, it is widely used in industry for quality assurance. Despite the wide application of ellipsometry and its high industrial relevance there are some material-specific standards and there have been no generally accepted standards dealing with model validation and measurement uncertainties. The first German standard DIN50989-1: 2018 Ellipsometry – Part1: Principles (currently international standard ISO 23131: 2021) marks the beginning of a 6-part standard series for ellipsometry, which was developed under consideration of GUM. T2 - International Conference on Spectroscopic Ellipsometry (ICSE-9) CY - Beijing, China DA - 22.05.2022 KW - Spectroscopic and imaging ellipsometry KW - Standards KW - Uncertainties PY - 2022 AN - OPUS4-56698 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Ermilova, Elena T1 - Hybrid optical measurement technique for detection of defects in epitaxially grown 4H-SiC layers N2 - Recent developments in power electronics require the use of new wide bandgap compound semiconductors. Silicon carbide (SiC) is one of the most promising materials for power electronics due to its outstanding properties and commercial availability. Some types of defects in the SiC substrates or homoepitaxial SiC layers can affect the performance of electronic devices in a serious manner or make its operation even impossible. Optical methods such as imaging ellipsometry (IE) and white light interference microscopy (WLIM) were applied for fast and non-contact investigation of defects in the epitaxially grown 12 µm 4H-SiC layers on 4H- SiC substrates. T2 - EOS Annual Meeting (EOSAM 2022) CY - Porto, Portugal DA - 12.09.2022 KW - Imaging ellipsometry KW - White light interference microscopy KW - Epitaxially grown 4H-SiC layers KW - Wide bandgap compound semiconductors PY - 2022 AN - OPUS4-56705 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Ermilova, Elena A1 - Hertwig, Andreas A1 - Döhring, Thorsten A1 - Stanik, Eva A1 - Cotroneo, Vincenzo A1 - Gibertini, Eugenio T1 - Ellipsometrical characterization of poly-dopamine layers considered for technical applications N2 - Although the organic molecule dopamine (3,4-dihydroxyphenethylamine) is commonly known as the “hormone of happiness”, thin films of poly-dopamine also have interesting technical properties. When produced by dip coating, the self-organizing layers grow in a reproducible thickness of single or multiple molecule monolayers of a few nanometer thickness only. In this work, we introduce a method of determining the layer thickness of poly-dopamine on mirrors for astronomical X-ray telescopes. This work is based on spectroscopic ellipsometry measurements and involves the development of an optical model for the poly-dopamine layers including the dielectric function. Thereby the complex refractive index of the produced layers was determined, covering the range from the ultraviolet to the near infrared spectral region. These measurement results and the corresponding technical challenges are presented in this contribution. Furthermore, an outlook to potential technical applications of this interesting material is given and poly-dopamine layers will make scientist and engineers hopefully happy as an innovative and fascinating technical solution for the future. T2 - SPIE PHOTONICS EUROPE CY - Strasbourg. France DA - 08.04.2024 KW - Polydopamine KW - Thin Solid Layers KW - X-ray optics KW - Spectroscopic Ellipsometry PY - 2024 SN - 978-1-5106-7344-1 DO - https://doi.org/10.1117/12.3015281 VL - 13013 SP - 1 EP - 8 PB - SPIE digital library AN - OPUS4-60954 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Ermilova, Elena A1 - Weise, Matthias A1 - Hertwig, Andreas T1 - Hybrid optical measurement technique for detection of defects in epitaxially grown 4H-SiC layers N2 - Recent developments in power electronics require the use of new wide bandgap compound semiconductor. We demonstrate the use of the ellipsometry and white light interference microscopy to detect defects in epitaxially grown SiC layers on SiC substrates. Such hybrid optical metrology methods can be used to better understand the mechanism of the development of the defects as well as their effects on the material´s optoelectronic properties. T2 - EOS Annual Meeting (EOSAM 2022) CY - Porto, Portugal DA - 12.09.2022 KW - Imaging ellipsometry KW - White light interference microscopy KW - Wide bandgap compound semiconductor KW - Epitaxially grown 4H-SiC layers PY - 2022 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-561113 DO - https://doi.org/10.1051/epjconf/202226610001 VL - 266 SP - 1 EP - 2 AN - OPUS4-56111 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Ermilova, Elena T1 - Multi-scale optical imaging methods for quality control of electronic devices N2 - The presentation demonstrates an application of multi-scale optical imaging methods such as spectroscopic imaging ellipsometry and white light interference microscopy for the investigation of wide-bandgap semiconductors for power electronics. The capabilities of these methods for the development of new reference calibration samples for scanning microwave microscopes (SMM) and conductive atomic force microscopes (C AFM) are discussed. T2 - Photonics Days Berlin Brandenburg 2023 CY - Berlin, Germany DA - 09.10.2023 KW - Imaging ellipsometry KW - White light interference microscopy KW - Power electronics KW - Reference standards KW - Metrology KW - Nanoelectronics PY - 2023 AN - OPUS4-59838 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -