TY - JOUR A1 - Rosu, Dana Maria A1 - Petrik, P. A1 - Rattmann, G. A1 - Schellenberger, M. A1 - Beck, Uwe A1 - Hertwig, Andreas T1 - Optical characterization of patterned thin films N2 - The present study investigates the use of imaging and mapping ellipsometry to determine the properties of non-ideal and patterned thin film samples. Samples which are candidates for future references and standards were prepared for this purpose. The samples investigated were lithographically patterned SiO2 and photoresist layers. The thickness and the optical constants of the two materials were determined using spectroscopic ellipsometry in the visible spectral range. On a larger lateral scale of several mm lateral resolution, the homogeneity was investigated using a goniospectral rotating compensator ellipsometer. A nulling imaging ellipsometer was used to determine the properties of the sample on a smaller scale of 25–150 µm. KW - Spectroscopic imaging and mapping ellipsometry KW - Inhomogeneous and patterned thin films KW - SiO2 KW - Photoresist KW - Ellipsometrie KW - Patterned films PY - 2014 DO - https://doi.org/10.1016/j.tsf.2013.11.052 SN - 0040-6090 VL - 571 IS - 3 SP - 601 EP - 604 PB - Elsevier CY - Amsterdam AN - OPUS4-32695 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -