TY - CONF A1 - Schultz, C. A1 - Schüle, M. A1 - Richter, M. A1 - Pahl, H.-U. A1 - Endert, H. A1 - Bonse, Jörn A1 - Dirnstorfer, I. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Fink, F. A1 - Stegemann, B. T1 - P1, P2 and P3 structuring of CIGSe solar cells with a single laser wavelength N2 - Manufacturing of CIGSe thin film solar modules involves typically one laser structuring step (P1) and two mechanical structuring steps (P2 and P3) for serial interconnection. In our approach, complete laser structuring is successfully demonstrated by application of short nanosecond laser pulses (<10 ns) with a single, visible wavelength of 532 nm. The P1 and the P3 trenches are scribed by induced and direct ablation, respectively. For the P2 scribe, the thermal input of the ns laser pulses is used to transform the CIGSe absorber layer locally into a highly conductive compound to provide proper electrical interconnection. These findings promise further simplification and flexibility to thin film solar cell production. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.2011 KW - Laser processing KW - Nanosecond pulses KW - Ablation KW - Cu(InGa)Se2 KW - Electrical properties PY - 2011 SN - 3-936338-27-2 DO - https://doi.org/10.4229/26thEUPVSEC2011-3AV.1.35 SP - 2540 EP - 2543 AN - OPUS4-24998 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Stegemann, B. A1 - Schultz, C. A1 - Schüle, M. A1 - Richter, M. A1 - Pahl, H.-U. A1 - Endert, H. A1 - Bonse, Jörn A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Fink, F. ED - Luschtinetz, T. ED - Lehmann, J. T1 - Neuartige Laserstrukturierung von CIGSe-Dünnschicht-Solarzellen N2 - Ein wesentlicher Vorteil der Dünnschichtphotovoltaik gegenüber der waferbasierten Photovoltaik liegt in der monolithischen Serienverschaltung. Bei der Herstellung von Chalkopyrit(CIGSe) -Dünnschicht-Solarmodulen erfolgen dafür typischerweise ein Laser-Strukturierungsschritt (P1) und zwei mechanische Strukturierungsschritte (P2, P3). In diesem Beitrag wird gezeigt, dass die Strukturierung von CIGSe-Solarmodulen vollständig mit kurzen Laserpulsen (<10 ns Pulsdauer) und einer einzigen Wellenlänge (532 nm) möglich ist. Der P1- und P3-Schnitt erfolgen durch direkte induzierte Ablation. Für den P2-Schnitt wird gezielt der hohe Wärmeeintrag der ns-Laserpulse genutzt, um die CIGSe- Absorberschicht lokal aufzuschmelzen und strukturell so zu verändern, dass eine elektrisch gut leitende Verbindung zwischen Front- und Rückkontakt entsteht. N2 - A major advantage of thin film photovoltaics over wafer-based photovoltaics is the monolithic series connection. Manufacturing of chalcopyrite (CIGSe) thin film solar modules involves typically one laser structuring step (P1) and two mechanical structuring steps (P2 and P3) for serial interconnection. In our approach, complete laser structuring is successfully demonstrated simply by application of short nanosecond laser pulses (<10 ns) with a single, visible wavelength of 532 nm. The P1 and the P3 trenches are scribed by induced direct ablation. For the P2 scribe, the thermal input of the ns laser pulses is used to transform the CIGSe absorber layer locally into a highly conductive compound to provide proper electrical interconnection between the front and back contact. T2 - 18. Symposium "Nutzung regenerativer Energiequellen und Wasserstofftechnik" / VDI-Tagung "Energieland Mecklenburg-Vorpommern" CY - Stralsund, Germany DA - 03.11.2011 KW - Photovoltaik KW - Dünnschichtsolarzellen KW - Chalkopyrite KW - Laserstrukturierung PY - 2011 SN - 978-3-9813334-4-2 SP - 204 EP - 210 AN - OPUS4-24999 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Stegemann, B. A1 - Richter, M. A1 - Schultz, C. A1 - Pahl, H.-U. A1 - Endert, H. A1 - Bonse, Jörn A1 - Rau, B. A1 - Quaschning, V. A1 - Fink, F. T1 - One wavelength fits all N2 - Structuring of Thin-film Solar Cells with a Single Laser Wavelength Structuring of a PV module into a number of cells is necessary to lower the current and to increase the voltage, and is typically accomplished with nanosecond laser pulses of different wavelengths. Duetothe many available laser sources, complex and expensive scribing Setups are necessary. To overcome this a concept for laser structuring of thin-film PV modules using a single wavelength allows prediction ofthe ablation behaviourfor a given laser pulse energy. KW - Thin-film solar cells KW - Nanosecond laser ablation KW - 532 nm wavelength KW - Laser scribing KW - Damage threshold PY - 2011 SN - 1869-8913 VL - 2 IS - 6 SP - 46 EP - 48 PB - Hüthig CY - Heidelberg AN - OPUS4-24158 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Richter, M. A1 - Schultz, C. A1 - Bonse, Jörn A1 - Pahl, H.-U. A1 - Endert, H. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Stegemann, B. A1 - Fink, F. T1 - Laser-ablation behavior of thin-film materials used in silicon and CIGSe based solar cells N2 - Structuring of thin-film photovoltaic modules requires basic knowledge of the laser – thin-film interaction in order to adapt the accessible laser parameters, like wavelength, power, repetition rate and scribing speed whilst taking into account the specific material properties of the layer. We have studied the nanosecond laserablation behavior of corresponding layers (i) of silicon based thin-film solar cells with a-Si/µc-Si tandem absorber type and (ii) of back contact and absorber layer of CIGSe solar cells. The respective ablation threshold fluences were determined as integrative parameters describing the specific laser – material interaction. For the threshold determination we used two different methods and developed a new analytical approach taking into account scribing through the glass substrate as it is preferred for most structuring processes. This was done by analyzing the thin film ablation results by means of optical microscopy, profilometry, scanning electron microscopy (SEM). Moreover, we determined the incubation coefficient of the regarded material layers which allows us to predict quantitatively the influence of the spot overlap on the scribing threshold. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.011 KW - Laser processing KW - Ablation KW - Incubation KW - a-Si/my-Si KW - CIGS PY - 2011 SN - 3-936338-27-2 DO - https://doi.org/10.4229/26thEUPVSEC2011-3DV.2.8 SP - 2943 EP - 2946 AN - OPUS4-24997 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Schultz, C. A1 - Schüle, M. A1 - Stelmaszczyk, K. A1 - Bonse, Jörn A1 - Witteck, R. A1 - Weizman, M. A1 - Rhein, H. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Stegemann, B. A1 - Fink, F. T1 - Film side laser patterning of molybdenum thin films sputter-deposited onto glass N2 - Serial interconnection of CIGSe thin film solar modules involves typically glass-side laser patterning of the molybdenum layer (P1 scribe). In this paper we present a working principle of P1 film side patterning. The investigated samples were sputter-deposited onto soda-lime glass substrates. For understanding the fundamental ablation behavior, two kinds of layer systems were studied: on the one hand monolayer systems which are compressively stressed and on the other hand bilayer systems, consisting of a tensile stressed layer on the substrate and a second layer on top. The film-side ablation process was studied using a nanosecond as well as a picosecond laser source. The influence of intrinsic stress was studied by XRD. Time resolved spectroscopy reveals the formation of plasma as important driving mechanism for ablation. It is shown that by proper adaption of the sputter conditions high-quality P1 film side patterning is achieved. T2 - 27th European photovoltaic solar energy conference and exhibition CY - Frankfurt, Germany DA - 24.09.2012 KW - Laser processing KW - Molybdenum KW - Strain KW - Ablation KW - Sputter deposition KW - Cu(InGa)Se2 PY - 2012 SN - 3-936338-28-0 DO - https://doi.org/10.4229/27thEUPVSEC2012-3CV.1.6 SP - 2266 EP - 2272 AN - OPUS4-27208 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - RPRT A1 - Thieme-Hack, M. A1 - Berghaus, U. A1 - Brümmer, F. A1 - Elsner, U. A1 - Färber, C. A1 - Frank, D. A1 - Illgas, M. A1 - Kalbe, Ute A1 - Kathage, J. A1 - Leers, A. A1 - Müller, B. A1 - Röger-Göpfert, C. A1 - Russland, H.-J. A1 - Schnabel, B. A1 - Schneider, O. A1 - Schockmann, D. A1 - Schomakers, H. A1 - Schwalbe, D. A1 - Stegemann, D. A1 - van den Berg, T. A1 - Kramps, S. T1 - Fachbericht Kunststoffsportböden - Nachhaltige Kunststoffbelagsauswahl für Sportfreianlagen N2 - Kunststoff- und Kunststoffrasenflächen kommt bei intensiv genutzten Flächen als Allwetterbeläge eine große Bedeutung zu. Sie leisten einen wichtigen Beitrag zur Absicherung eines ganzjähriger Sportangebote. Gerade Kunststoffrasen ist aber in den letzten Jahren häufig in die Kritik geraten, insbesondere durch gefährliche Inhaltsstoffe und andere negative Einflüsse auf die Umwelt. Dies hat bei Bauherren zu einer Verunsicherung geführt und Fragen aufgeworfen, die erst teilweise beantwortet sind. Die Diskussionen rund um diesen Allwetterbelag haben bereits dazu geführt, dass von Seiten der Industrie viel verändert wurde und neue innovative Lösungen gefunden werden. Der Fachbericht stellt eine Handreichung für Fachleute und interessierte Laien dar, um mehr Klarheit besonders hinsichtlich der Umweltanforderungen zu erzielen. KW - Kunststoffsportbeläge KW - Kunstrasen KW - Umweltverträglichkeit KW - Schadstofftransfer KW - Mikroplastik PY - 2022 UR - https://shop.fll.de/de/fachbericht-kunststoffsportboeden-broschuere.html SP - 1 EP - 70 PB - Forschungsgesellschaft Landschaftsentwicklung Landschaftsbau (FLL) CY - Bonn AN - OPUS4-54390 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Chowdhary, S. A1 - Moschner, J. A1 - Mikolajczak, D. J. A1 - Becker, M. A1 - Thünemann, Andreas A1 - Kästner, Claudia A1 - Klemczak, D. A1 - Stegemann, A.-K. A1 - Böttcher, C. A1 - Metrangolo, P. A1 - Netz, R. R. A1 - Koksch, B. T1 - The Impact of Halogenated Phenylalanine Derivatives on NFGAIL Amyloid Formation N2 - The hexapeptide hIAPP22–27 (NFGAIL) is known as a crucial amyloid core sequence of the human islet amyloid polypeptide (hIAPP) whose aggregates can be used to better understand the wild‐type hIAPP′s toxicity to β‐cell death. In amyloid research, the role of hydrophobic and aromatic‐aromatic interactions as potential driving forces during the aggregation process is controversially discussed not only in case of NFGAIL, but also for amyloidogenic peptides in general. We have used halogenation of the aromatic residue as a strategy to modulate hydrophobic and aromatic‐aromatic interactions and prepared a library of NFGAIL variants containing fluorinated and iodinated phenylalanine analogues. We used thioflavin T staining, transmission electron microscopy (TEM) and small‐angle X‐ray scattering (SAXS) to study the impact of side‐chain halogenation on NFGAIL amyloid formation kinetics. Our data revealed a synergy between aggregation behavior and hydrophobicity of the phenylalanine residue. This study introduces systematic fluorination as a toolbox to further investigate the nature of the amyloid self‐assembly process. KW - Small-angle X-ray scattering KW - SAXS KW - Nanoparticle KW - Nanostructure KW - Peptide KW - Amyloid PY - 2020 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-518632 DO - https://doi.org/10.1002/cbic.202000373 VL - 21 IS - 24 SP - 3544 EP - 3554 PB - Wiley CY - Weinheim AN - OPUS4-51863 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Stegemann, B. A1 - Bonse, Jörn A1 - Richter, M. A1 - Schultz, C. A1 - Pahl, H.-U. A1 - Rau, B. A1 - Quaschning, V. A1 - Fink, F. T1 - Laser Ablation of Thin Films for Photovoltaic Application T2 - 26. Tag der Chemie CY - Berlin, Germany DA - 2011-07-13 PY - 2011 AN - OPUS4-24124 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Sharatchandra Singh, W. A1 - Stegemann, Robert A1 - Kreutzbruck, Marc A1 - Mukhopadhyay, C. K. A1 - Purnachandra Rao, B. T1 - Mapping of Deformation-Induced Magnetic Fields in Carbon Steels Using a GMR Sensor Based Metal Magnetic Memory Technique N2 - Giant magneto-resistive (GMR) sensor based metal magnetic memory (MMM) technique is proposed for mapping of deformation-induced self-magnetic leakage fields (SMLFs) in carbon steel. The specimens were subjected to different amounts of tensile deformation and the deformation-induced SMLFs were measured using a GMR sensor after unloading the specimens. 3D-nonlinear finite element modeling was performed to predict stress–strain state in a steel specimen under tensile load. The experimentally obtained SMLF images were correlated with the finite element model predicted stress–strain states. Studies reveal that the MMM technique can detect the plastic deformation with signal-to-noise ratio better than 20 dB. The technique enables the mapping of plastic deformation in carbon steels for the evaluation of the severity of deformation. The study also reveals that deformation-induced SMLF is influenced by the presence of initial surface residual stress, introduced by shot peening. The intensity of SMLF signal is found to increase with increase in tensile load and decrease with shot peening. KW - GMR KW - Metal Magnetic Memory KW - 3D-finite element modeling KW - Plastic deformation KW - Carbon steel PY - 2018 DO - https://doi.org/10.1007/s10921-018-0470-8 SN - 0195-9298 VL - 37 IS - 2 SP - 21 PB - Springer US AN - OPUS4-45667 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Marwitz, Christian A1 - Stegemann, B. A1 - Breitkreiz, Maxim A1 - Spaltmann, Dirk A1 - Kloß, Heinz A1 - Woydt, Mathias A1 - Sturm, Heinz T1 - Correlation of adhesion force and electrical conductivity in Magnéli-type vanadium oxides and highly oriented pyrolytic graphite N2 - A correlation of adhesion force and electrical conductivity is established for a vanadium oxide and highly oriented pyrolytic graphite (HOPG). Adhesion forces were determined by analysis of pull-off forces obtained from force–distance curves with atomic force microscopy in ultrahigh vacuum, on clean surfaces and with defined contact conditions. The investigated samples include (i) different stoichiometries of Magnéli-type vanadium oxides (V3O5, V4O7, V6O11, and V7O13), which undergo metal-insulator-transitions as a function of temperature, (ii) the (0001) basal plane and the (10–10) prism plane of highly oriented pyrolytic graphite (HOPG), which differ in their respective perpendicular-plane electrical conductivities by several orders of magnitude, and (iii) the (100) surfaces of pure metal single crystals, i.e., silver (Ag), copper (Cu), iron (Fe) and gold (Au). It is shown, that the vanadium oxides as well as the graphite exhibit significantly lower adhesion forces in their electrical conductive state than in their non-electrical conductive state. The values obtained for the electrical conductive states are quantitatively confirmed by the measurements on the single crystal metals. KW - Adhesion force KW - HOPG KW - Vanadium oxide KW - Magnéli phases KW - Single crystal metals KW - Atomic force microscopy PY - 2011 DO - https://doi.org/10.1016/j.susc.2011.04.014 SN - 0039-6028 VL - 605 IS - 13-14 SP - 1271 EP - 1274 PB - Elsevier CY - Amsterdam AN - OPUS4-23953 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -