TY - JOUR A1 - Bär, S. A1 - Huber, G. A1 - Gonzalo, J. A1 - Perea, A. A1 - Munz, Martin T1 - Pulsed laser deposition of EU - Y2O3 thin films on (0001) alpha-Al2O3 N2 - This paper focuses on the preparation and characterization of crystalline thin films of rare-earth-doped sesquioxides (Y2O3, Lu2O3) grown by pulsed laser deposition on single-crystal (0001) sapphire substrates. X-ray diffraction measurements show that the films with thicknesses between 1 nm and 500 nm were highly textured along the 111 direction. Using Rutherford backscattering analysis, the correct stoichiometric composition of the films was established. The emission and excitation spectra of europium-doped films with a thickness 100 nm look similar to those of the corresponding crystalline bulk material, whereas films with a thickness 20 nm show a completely different emission behavior. KW - Pulsed laser deposition KW - Integrated optical devices KW - X-ray diffraction KW - Atomic force microscopy KW - Luminescence PY - 2004 UR - http://www.sciencedirect.com/science/journal/0926860X DO - https://doi.org/10.1007/s00339-004-3029-8 SN - 0947-8396 VL - 80 IS - 2 SP - 209 EP - 216 PB - Springer CY - Berlin AN - OPUS4-5990 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -