TY - CONF A1 - Hertwig, Andreas T1 - Certification of reference materials and validation of reference procedures - challenges on ellipsometry T2 - ICSE - 4 CY - Stockholm, Sweden DA - 2007-06-11 PY - 2007 AN - OPUS4-14711 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Qualitätssicherung mit Optischen Methoden T2 - OptecBB Jahrestreffen CY - Mittenwalde, Germany DA - 2007-12-06 PY - 2007 AN - OPUS4-16473 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Standardisation in the analysis of complex thin film systems with ellipsometry T2 - Workshop Ellipsometry 2012 CY - Leipzig, Germany DA - 2012-03-05 PY - 2012 AN - OPUS4-25686 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - On the use of plasma-deposited thin films for gas sensors with read-out based on the SPR effect T2 - PSE 2012, 13th International Conference on Plasma Surface Engineering CY - Garmisch-Partenkirchen, Germany DA - 2012-09-10 PY - 2012 AN - OPUS4-25971 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Charakterisierung von Oberflächen und dünnen Schichten mit Ellipsometrie T2 - BLiX-Seminar, TU Berlin CY - Berlin, Germany DA - 2012-07-10 PY - 2012 AN - OPUS4-26147 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Enhanced SPR-ellipsometric gas sensors with doped dielectric layers T2 - ICSE 6 Konferenz CY - Kyoto, Japan DA - 2013-05-26 PY - 2013 AN - OPUS4-28803 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Gasdetektion mit komplexen SPR-Sensoren und ellipsometrischem Messprinzip T2 - Bunsentagung 2013 CY - Karlsruhe, Germany DA - 2013-05-09 PY - 2013 AN - OPUS4-28804 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - On the use of spectroscopic imaging ellipsometry for quantification and characterisation of defects in thin films for power electronics N2 - Compound semiconductors (CS) are promising materials for the development of high-power electrical applications. They have low losses, can withstand high temperatures and can operate at very high voltages and currents. This makes them a key technology for the electrification of many high energy applications, especially electromobility and HVDC power lines. The challenge with CS technology is that most of the process technology has to be developed anew to the high standards required by electronic applications. Today, compound semiconductors can be produced in thin layers on top of substrates fabricated from classical crystal growth processes that are already well established. A promising method for this is metal organic vapour phase epitaxy (MOVPE). With this method, many different compounds with semiconducting properties can be synthesized. Additionally, this process technology is a direct thin layer deposition method. Therefore, complex multilayer systems can be generated directly by the deposition process and without the need of doping after growing. There are a number of critical defects that can originate from the deposition process of these thin film devices. Within this project, we intend to develop new correlative imaging and analysis techniques to determine defect types, to quantify defect size and number density, as well as to characterise defects for process optimisation. We report here on the use of spectroscopic ellipsometry and imaging ellipsometry to investigate defects in several different compound semiconductor materials used in high-power electronic devices. The materials we investigated are β-Ga2O3, SiC, GaN, AlN, and AlGaN materials as well as oxidised SiC surfaces. All of these materials have their typical defects and require optimised measurement and analysis schemes for reliable detection and analysis. Spectroscopic ellipsometry is a highly sensitive method for determining the thicknesses and dielectric function of thin layers, yielding potentially a high number of microscopic properties. The combined method between ellipsometry and optical microscopy is called imaging ellipsometry and is especially powerful for the large amount of data it produces. We have analysed defects in SiC- and AlN-based thin film semiconductors as well as characterised the properties of different types of SiO2 layers created on top of SiC monocrystals. We developed ellipsometric models for the data analysis of the different semiconductor materials. If the defects have geometric features, it is useful to combine the ellipsometric analysis with topometry method like interference microscopy and scanning probe microscopy. We have successfully characterised function-critical defects in MOVPE SiC layers and correlated the findings with topography from WLIM measurements. We have developed an imaging ellipsometric measurement methodology that allows to estimate the relative defect area on a surface by a statistical raw data analysis. Compound semiconductors (CS) are promising materials for the development of high-power electrical applications. They have low losses, can withstand high temperatures and can operate at very high voltages and currents. This makes them a key technology for the electrification of many high energy applications, especially electromobility and HVDC power lines. The challenge is that most of the process technology has to be developed specifically and tailored to the high standards required by electronic applications. Today, many different CS materials can be produced in thin layers on top of substrates fabricated from classical crystal growth processes that are already well established. A promising method for this is metal organic vapour phase epitaxy (MOVPE). This technology is a direct thin layer deposition method capable of producing complex multilayer systems directly from one deposition process without the need of doping after growing. There are a number of critical defects that can originate from the deposition process when targeting electronic thin film devices. Within this project, we intend to develop new correlative imaging and analysis techniques to determine defect types, to quantify defect size and density, as well as to characterise defects for further process optimisation. We report here on the use of spectroscopic and multispectral imaging ellipsometry to investigate defects in several different compound semiconductor materials used in high-power electronic devices. The materials we investigated are β-Ga2O3, SiC, GaN, AlN, and AlGaN as well as oxidised SiC. All of these materials have their typical defects and require optimised measurement and analysis schemes for reliable detection and analysis. Spectroscopic ellipsometry is a highly sensitive method for determining the thicknesses and dielectric function of thin layers, yielding potentially a high number of microscopic properties. The combined method between ellipsometry and optical microscopy is known as imaging ellipsometry and is especially powerful for the large amount of data it produces. We have analysed defects in SiC- and AlN-based thin film semiconductors as well as characterised the properties of different types of SiO2 layers created on top of SiC monocrystals. We developed ellipsometric models for the data analysis of the different semiconductor materials. If the defects have geometric features, it is useful to combine the ellipsometric analysis with topometry methods like interference microscopy and scanning probe microscopy. We have successfully characterised function-critical defects in MOVPE SiC layers and correlated the findings with topography from WLIM measurements. We have developed an imaging ellipsometric measurement methodology that allows to estimate the relative defect area on a surface by a statistical raw data analysis. T2 - EMRS Spring Meeting 2024 - ALTECH 2024 CY - Strasbourg, France DA - 27.05.2024 KW - Ellipsometry KW - Power Electronics KW - Layer Materials KW - Defect Analysis PY - 2024 AN - OPUS4-60266 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hülagü, Deniz A1 - Ermilova, Elena A1 - Weise, Matthias A1 - de Préville, Sophie A1 - Hoffmann, Johannes A1 - Morán-Meza, José A1 - Piquemal, Francois A1 - Hertwig, Andreas T1 - Characterization of electrical properties in microstructured ITO layers using spectroscopic ellipsometry N2 - Thin indium tin oxide (ITO) layers are essential in optoelectronics due to their good electrical conductivity, optical transparency in the visible and near infrared regions, substrate adherence and chemical stability. They are widely used in photovoltaic cells, displays, and organic LEDs, and as low emissivity coatings in smart windows and energy-efficient buildings. For nanophotonic devices, understanding the interplay of ITO’s optical and electrical properties is crucial. Electrical resistivity can be tuned by modifying deposition conditions and layer thickness. However, measuring these properties, especially on microstructured surfaces, remains challenging due to the issues like homogeneity and instability during etching. Spectroscopic ellipsometry (SE), a non-destructive and phase-sensitive optical technique, offers precise measurement of thin film thickness and dielectric properties. In this study, we investigated the layer thickness, optical constants, and sheet resistance of unstructured and microstructured ITO thin layers using SE. Unstructured layers were deposited via DC-magnetron sputtering on silicon (Si) substrates in argon (Ar) atmospheres with varying oxygen (O2) flows. This multi-technique approach enhances the understanding of ITO layer structuring and provides robust methodologies for correlating optical and electrical properties, advancing metrology for nanotechnology applications and material science. It also opens the pathway to new reference samples and calibration methods for electrical properties involving device-like structured samples. T2 - ICSE10 - 10th International Conference on Spectroscopic Ellipsometry CY - Boulder, CO, USA DA - 08.06.2025 KW - Ellipsometry KW - Indium tin oxide (ITO) KW - Scanning microwave microscopy (SMM) KW - Sheet resistance calibration standards KW - ITO wet etching PY - 2025 AN - OPUS4-63631 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Khropost, Diana A1 - Riethmüller, Franziska A1 - Stanik, Eva A1 - Döhring, Thorsten A1 - Hertwig, Andreas A1 - Hülagü, Deniz T1 - Polydopamine -a bionic material and its potential applications for batteries N2 - Polydopamine (PDA) recently came into focus as an innovative material for applications in various technical fields. It is a very strong glue that sticks on almost everything, even under water: In nature, PDA is found in the byssal thread cuticles of mussels. In 2007, Lee et al. first showed that dipping substrates into a solution of dopamine results in the formation of thin PDA films on numerous materials. The simple preparation and the high durability of these coatings have stimulated growing research interest and a wide variety of applications in energy, biomedical and environmental science, and other fields. We have investigated thin layers of PDA with different methods including ellipsometry, tactile measurements of the layer thickness and in situ absorption measurements during the polymerization process. During polymerization the dopamine solution shows a progressive colour change from transparent to brown that has been monitored by spectrometric measurements. The increasing absorption of the cuvette with dopamine solution can be seen in figure 1. The absorption levels off after approximately 2,5 h of polymerization time, thus indicating termination of the primary formation of the PDA film. This data shows that for homogeneous layer growth it is advantageous to interrupt the process after two hours. To generate a higher layer thickness, the samples need to be cleaned and immersed in a fresh dopamine solution subsequently. In addition, ellipsometry measurements on polydopamine layers could determine the corresponding coating thickness as well as its complex refractive index over a broad wavelength range. T2 - Materials Week 2025 CY - Frankfurt am Main, Germany DA - 02.04.2025 KW - Polydopamine KW - Ellipsometry KW - Leyer thickness PY - 2025 AN - OPUS4-63636 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Towards hydrogen economy: multimethod analysis and operando investigation of mesoporous iridium oxides films for electrocatalysis, EMPIR/EURAMET Project HyMet 16ENG03 N2 - In the face of rising energy demand and the impending climate change the development of a sustainable, fossil-free fuel and chemical production is of global importance. One possible goal is the development of electrochemical conversion processes using catalysts. Porous materials play an important role in such energy applications. The key to the development of improved catalysts is a better understanding of the relations between their performance, stability and physico-chemical properties. However, the complex morphology of such catalysts constitutes a challenge even for modern analytical techniques. Spectroscopic ellipsometry (SE) is a versatile method for studying material properties by using appropriate models (e.g. film thickness, optical and electronic properties). The fact that the material properties cannot be taken directly from the measured spectra, the developed models have to be validated. In a first step, the model for the ellipsometric fit studies of a calcination series of mesoporous iridium oxide films (300 – 600 °C) was investigated and validated with respect to their material properties. Moreover, the electronic structures of the catalysts reveal a direct correlation with electrochemical activities. The development of an environmental cell offers the possibility of investigations under real conditions. This will allow changes in the optical and electronic properties during the electrocatalytic oxygen evolution reaction. T2 - HyMet dissemination event CY - Online meeting DA - 17.11.2020 KW - Correlative ex-situ ellipsometric analysis KW - Ellipsometric operando investigation KW - Hydrogen economy KW - Mesoporous iridium oxides films KW - Oxygen evolution reaction PY - 2020 AN - OPUS4-51629 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Normung in der Oberflächen-und Schichttechnik N2 - Report über Normungsaktivitäten im Bereich der Messtechnk an Oberflächen und dünnen Schichten. Übersicht über Methoden und Vorstellung von laufenden Projekten mit Bezug zur Normung T2 - PlasmaGermany Herbstmeeting 2022 CY - Bielefeld, Germany DA - 07.11.2022 KW - Oberflächenmesstechnik KW - Spektroskopie KW - Ellipsometrie KW - XPS KW - Dünne Schichten PY - 2022 AN - OPUS4-56483 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - How can ellipsometry help us to understand ultrashort pulse laser material processing? N2 - Laser processing of materials is a key technology in many fields of modern production. Still, more work is needed to understand the mechanisms behind laser material interaction. Recently, ellipsometry has become a valuable tool for investigating materials pre and post laser irradiation. Imaging ellipsometry and time-resolved methods boost this work and open up the path to a much better understanding of light interaction with solid state surfaces. We use spectroscopic single-spot and imaging ellipsometry to investigate treated and untreated surfaces. The goal is to determine changes in the material dielectric function, as well as geometric changes in surface layers (oxidation, modification, ablation, blistering). A good knowledge of bulk dielectric functions is often needed to model processes caused by laser irradiation. Imaging ellipsometry can play an important role in the post-analysis of laser treated sites on surfaces if combined with other methods such as IR-spectroscopy, SEM, topometric methods, Raman-spectroscopy, and XPS. In this work, we present the results of several studies to investigate laser-treated materials by means of ellipsometry. We cover the following topics: • Ablation of amorphous carbon layers, role of intra-layer interference effects on the result • Amorphisation behaviour of c-Si, depending on the crystal orientation, • Understanding the role of bulk and surface properties on ablation behaviour of classical and multicomponent high-entropy metals, T2 - 13th Workshop on Spectroscopic Ellipsometry CY - Genova, Italy DA - 09.02.2026 KW - Ellipsometry KW - Laser Ablation KW - Femtosecond Technology KW - Surface and Thin Layer Technology KW - Laser Surface processing PY - 2026 AN - OPUS4-65521 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -