TY - JOUR A1 - Albrecht, S. A1 - Schäfer, S. A1 - Lange, I. A1 - Yilmaz, S. A1 - Dumsch, I. A1 - Allard, S. A1 - Scherf, U. A1 - Hertwig, Andreas A1 - Neher, D. T1 - Light management in PCPDTBT:PC70BM solar cells: A comparison of standard and inverted device structures N2 - We compare standard and inverted bulk heterojunction solar cells composed of PCPDTBT:PC70BM blends. Inverted devices comprising 100 nm thick active layers exhibited short circuit currents of 15 mA/cm², 10% larger than in corresponding standard devices. Modeling of the optical field distribution in the different device stacks proved that this enhancement originates from an increased absorption of incident light in the active layer. Internal quantum efficiencies (IQEs) were obtained from the direct comparison of experimentally derived and modeled currents for different layer thicknesses, yielding IQEs of ~70% for a layer thickness of 100 nm. Simulations predict a significant increase of the light harvesting efficiency upon increasing the layer thickness to 270 nm. However, a continuous deterioration of the photovoltaic properties with layer thickness was measured for both device architectures, attributed to incomplete charge extraction. On the other hand, our optical modeling suggests that inverted devices based on PCPDTBT should be able to deliver high power conversion efficiencies (PCEs) of more than 7% provided that recombination losses can be reduced. KW - Organic solar cells KW - Inverted solar cells KW - PCPDTBT KW - Low band-gap KW - Optical modeling PY - 2012 DO - https://doi.org/10.1016/j.orgel.2011.12.019 SN - 1566-1199 VL - 13 IS - 4 SP - 615 EP - 622 CY - Amsterdam [u.a.] AN - OPUS4-25453 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Almalla, A. A1 - Hertwig, Andreas A1 - Fischer, Daniel A1 - Özcan Sandikcioglu, Özlem A1 - Witt, Julia T1 - Development of layer-by-layer assembled thin coatings on aluminium alloy AA2024-T3 for high resolution studies of local corrosion processes N2 - The aim of this study is to develop nanometer-thin epoxy-based films on aluminium alloy AA2024-T3 as a model coating system for high resolution corrosion studies. Spin coating was used for the layer-by-layer (LbL) deposition of poly-(ethylenimine) (PEI) and poly([o-cresyl glycidyl ether]-co-formaldehyde) (CNER) bilayers. The film chemistry and the cross-linking process were characterized by means of Fourier-transform infrared spectroscopy (FTIR). Ellipsometric data confirmed the linear increase of film thickness. The potentiodynamic polarization and electrochemical impedance spectroscopy (EIS) results indicate the improvement of the film barrier properties with increasing film thickness. Mapping of the topography and the volta potential was performed by means of scanning Kelvin probe force microscopy (SKPFM). The results indicate the presence of a homogeneous film structure, while the intermetallic phases can still be identified below the coating. The SKPFM Analysis confirmed that the model films are suitable for investigation of corrosion processes at the coating/metal interface. KW - Spectroscopy KW - Coatings KW - Electrochemistry KW - Microscopy KW - Resins PY - 2020 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-514627 DO - https://doi.org/10.1002/app.49826 SN - 0021-8995 VL - 137 IS - 48 SP - e49826-1 EP - e49826-9 PB - Wiley CY - New York, NY AN - OPUS4-51462 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - An, Q. A1 - Bäßler, Ralph A1 - Hertwig, Andreas A1 - Rehfeldt, Rainer A1 - Hidde, Gundula A1 - Otremba, Frank T1 - Investigation of Mechanical Stress and B10 Exposure on FKM Polymer N2 - Mechanical stress often accelerates the failure of polymer materials. The aim of this research is to study the interaction between the sealing material FKM and biofuels B10 (heating oil with 10% biodiesel). The mechanical stress test was carried out in a special apparatus. Both mechanical and non-mechanical stress tests were conducted on specimens at 20, 40, and 70 °C for 28 days to document changes in mass, volume, and tensile properties. Both increasing temperature and mechanical stress have a significant effect on the tensile strength of the FKM polymer when exposed to B10. The combination of increasing temperature and mechanical stress induced rupture within 2 h. It was also established that FKM polymer with pre-exposure in B10 survived longer during mechanical stress compared to specimens exposed only to air. With the support of infrared (IR) spectroscopy, we were able to confirm the penetration of B10 into the FKM polymer. T2 - TMS 2024 Annual Meeting & Exhibition Teilnahme mit Präsentation CY - Orlando-Florida / USA DA - 03.03.2024 KW - Biofuels KW - Sealing materials KW - Mechanical stress KW - Change in tensile properties PY - 2024 DO - https://doi.org/10.1007/978-3-031-50349-8_108 SP - 1253 EP - 1261 PB - Springer CY - Orlando-Florida / USA AN - OPUS4-59638 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Beck, Uwe A1 - Baier, Jennifa A1 - Fischer, Daniel A1 - Griepentrog, Michael A1 - Hertwig, Andreas A1 - Hielscher-Hofinger, Stefan A1 - Stockmann, Jörg Manfred A1 - Weise, Matthias T1 - Mapping und Imaging modifizierter Oberflächen: Generische Kenngrößen, Fehlstellen, Reinigungszustand und Haftfestigkeit N2 - Der Vortrag widmet sich dem Mapping und Imaging modifizierter Oberflächen: generische Kenngrößen, Fehlstellen, Reinigungszustand und Haftfestigkeit. Es werden Untersuchungsmethoden zu ihrer Prüfung dargestellt. T2 - 37. ak-adp 2021 CY - Jena, Germany DA - 16.06.2021 KW - Qualitätssicherung KW - Mapping modifizierter Oberflächen KW - Imaging modifizierter Oberflächen KW - Generische Kenngrößen KW - Haftfestigkeit KW - Klebfestigkeit PY - 2021 SP - 1 EP - 10 AN - OPUS4-52893 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Beck, Uwe A1 - Griepentrog, Michael A1 - Hertwig, Andreas A1 - Hielscher, Stefan A1 - Weise, Matthias T1 - Auf dem Weg zu Industrie 4.0: Bestimmung von Messunsicherheitsbudgets in der Oberflächentechnik N2 - Vorgestellt wurde die Bestimmung von Messunsicherheitsbudgets für sehr unterschiedliche physikalische Größen, die in der Oberflächentechnik von hoher Relevanz sind: Stufenhöhe h, Schichtdicke d, Eindringhärte HIT und Haftfestigkeit. Die Unterschiede betreffen die Art der Prüfmethodik (optisch zerstörungsfrei vs. mechanisch invasiv/zerstörend), die laterale Größe des Integrationsgebietes der Messung (lokal: nano bis sub-mikro vs. global: mikro bis makro) und die Art der Bestimmung von Messunsicherheitsbudgets (physikalische Größen: direkt rückführbar; Werkstoffkenngröße: genormt; Systemkenngröße: genormt). Im Rahmen von Industrie 4.0 werden ausgehend der geforderten Spezifikation des beschichteten Produkts (Mittelwert mit Vertrauensbereich oder Mindestwert) durchgehende Toleranzbänder zur Oberflächenmodifizierung/Beschichtung des Substrats, einhergehend mit Prozessfenstern, die diese Toleranzbänder garantieren, erforderlich, die zuverlässig erfasst werden müssen. Die Frage der anzuwendenden Mess- und Prüftechnik und die damit notwendige Betrachtung von Messunsicherheitsbudgets ist für die Digitalisierung von Konditionierungs-, Zustands-, Regel- und Steuergrößen unverzichtbar. Mit Blick auf die Einhaltung von Prozessfenstern und die dafür notwendige Prozessführung wird technologisches Kern-Know-how digitalisiert, das es unbedingt zu schützen gilt. Nur lokale Netze können diese Sicherheit garantieren, in globalen Netzen ist die Datensicherheit bestenfalls maximierbar T2 - 14. ThGOT Thementage Grenz- und Oberflächentechnik und 6. Kolloquium Dünne Schichten in der Optik CY - Zeulenroda, Germany DA - 12.03.2019 KW - Oberflächentechnik KW - Messunsicherheit KW - Messtechnik KW - Prüftechnik KW - Haftfestigkeit PY - 2019 SN - 978-3-00-058187-8 VL - 2019 SP - 1 EP - 10 AN - OPUS4-47670 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Beck, Uwe A1 - Hertwig, Andreas A1 - Kormunda, M. A1 - Krause, Andreas A1 - Krüger, Hannes A1 - Lohse, Volkmar A1 - Nooke, Alida A1 - Pavlik, J. A1 - Steinbach, J. T1 - SPR enhanced ellipsometric gas monitoring on thin iron doped tin oxide layers N2 - In this work, thin iron doped tin oxide layers (3–6 nm) were investigated with regard to gas sensitivity by means of surface plasmon resonance (SPR) effect with ellipsometric readout. The experimental set-up was a Kretschmann configuration with gold as metal layer. The sensor system was exposed to different concentrations of methane in the low ppm range and the sensor response of an uncoated gold layer compared to a gold layer coated with iron doped tin oxide. The additional layer effects stability with regard to drift behavior of the sensor and an increase in sensitivity. Furthermore, the sensor is able to detect the toxic gas carbon monoxide in low concentration range (down to 0.5 ppm). The thin layers were investigated by X-ray photoelectron spectroscopy, secondary electron microscopy and spectroscopic ellipsometry. The possible mechanisms taking place on the surface are discussed. KW - Gas sensing KW - SPR effect KW - Iron doped tin oxide KW - Ellipsometry PY - 2011 DO - https://doi.org/10.1016/j.snb.2011.08.036 SN - 0925-4005 SN - 1873-3077 VL - 160 IS - 1 SP - 609 EP - 615 PB - Elsevier CY - Amsterdam [u.a.] AN - OPUS4-24826 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Beck, Uwe A1 - Hertwig, Andreas A1 - Männ, Marion T1 - Certified reference material BAM-L101 TiO2/SiO2 multilayer on BK7 glass PY - 2005 UR - http://www.rm-certificates.bam.de/de/rm-certificates_media/rm_cert_layer_and_surface/bam_l101repe.pdf SP - 1 EP - 22 PB - Bundesanstalt für Materialforschung und -prüfung CY - Berlin AN - OPUS4-25407 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Beck, Uwe A1 - Hertwig, Andreas A1 - Männ, Marion T1 - Ellipsometry and Standardization: Validation of Models - Key Issue for Reference Coatings and Non-ideal Samples N2 - Standardisation of ellipsometry is mainly based on three documents: pioneering work at NIST [1] on film standards, a publicly available specification and stan-dard testing procedure [2] for real-world samples by BAM and a standard specification for integrated metrology by SEMI [3]. Other activities refer to inter-laboratory comparisons for selected layer/substrate systems and analytical methods including ellipsometry [4] and the development of combined standards for thickness d and step height h [5]. Generally, precision of ellipsmetry in terms of raw data Ψ and Δ meets the major demands for all ellipsometric principles (RPE, RAE, PME, RCE, NE). As a result, fingerprint capabilty is al-most perfect for various layer/substrate systems. However, this is not true for accuracy in terms of physical quantities such as thickness d, optical (n, k) and dielectric constans (ε1, ε2,) as modelling is required. Hence, the layer/substrate and material dependent validation of models is nowadays a key issue. In contrast to the sub-nanometer sensi-tivity in vertical direction, the effective lateral resolution of almost all ellipso-metric principles except for imaging null ellipsometry is rather poor, usually be-yond 100 µm. Hence, nanometer-scaled homogeneity testing and the measurement of micro- and nanopatterned structures is not feasible by standard configurations. KW - Ellipsometry KW - Standardisation KW - Reference Coatings KW - Non-ideal samples KW - Validation of models PY - 2008 IS - 2 SP - 6 EP - 7 AN - OPUS4-18673 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Beck, Uwe A1 - Hertwig, Andreas A1 - Reiners, Georg T1 - Qualitätssicherung in der Oberflächen- und Schichttechnik mit optischen Verfahren T2 - Congress Industrielle Oberflächentechnik (CIO 2005) "Schichten auf Glas und Polymeren - Neue Anwendungen für Optik, Elektronik und Umwelt CY - Braunschweig, Deutschland DA - 2005-02-22 KW - Qualitätssicherung KW - Oberflächentechnik KW - Optische Verfahren PY - 2005 SP - 7-1-7-9 PB - Neue Materialien Niedersachsen CY - Göttingen AN - OPUS4-7694 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Beck, Uwe A1 - Hertwig, Andreas A1 - Reiners, Georg A1 - Weise, Matthias A1 - Hartung, J. A1 - Reinhold, E. A1 - Strümpfel, J. T1 - Ion Assisted vs. Plasma Assisted PVD: Preparation of Optical Multilayers in a Versatile Cluster System Implementing Electron Beam and Sputter Technology N2 - Functionality of optical systems requires optical coatings of high quality which have to be adapted to the application in terms of the performance of optical parameters such as reflectivity (AR, low, defined, high), the substrate material of interest (polymers, ceramics, and glass), the environmental conditions (such as temperature or humidity), and the service conditions (such spectral range and power density). Moreover, in many cases, additional non-optical requirements have to be met, including mechanical features such as scratch resistance, hardness and modulus. Consequently, thickness and overall uniformity requirements are steadily increasing. In general, these demands can usually not be achieved by a single film or coating. Instead, films with specific design features (such as gradients), layer stacks and multilayers are a prerequisite for high quality layers and their reliability. For the development of such layer systems, a versatile cluster deposition system consisting of three clusters and a cluster-to-cluster handler has been designed. Besides a PECVD cluster for DLC coatings, two PVD clusters implement ion assisted electron beam evaporation and plasmabased sputter technology. In addition to metallic films, preparation of oxide and nitride optical coatings (SiO2, TiO2, Ta2O5, ITO, Al2O3, TiN, AlN) in various process modifications (nonreactive, partially reactive, full-reactive; rf-, dc-, mf- mode; PEM control) has been carried out. Within this paper, the effect of several process parameters on layer quality (optical constants, density, and uniformity) is discussed for selected applications examples (AR- and HR coatings, applications at elevated temperatures and applications of enhanced mechanical performance). It has been shown that specific features of ion and plasma assisted PVD processes, including ion-beam and plasma preand post-treatment of substrates and layer systems, may widen the application range and improve functionality features of given coating/substrate systems. T2 - 47th Annual Technical Conference Proceedings CY - Dallas, TX, United States of America DA - 2004-04-24 KW - Ion assisted PVD KW - Optical multilayers KW - Plasma assisted PVD KW - Cluster deposition system PY - 2004 UR - http://www.knovel.com/knovel2/Toc.jsp?BookID=1082 SN - 0737-5921 SN - 1539-2236 SP - 86 EP - 90 CY - Albuquerque, NM AN - OPUS4-4148 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Beck, Uwe A1 - Hertwig, Andreas A1 - Reiners, Georg A1 - Weise, Matthias A1 - Hartung, J. A1 - Reinhold, E. A1 - Strümpfel, J. T1 - Ion-assisted vs. Plasma-assisted PVD: Preparation of Optical Multi-layers in a Versatile Cluster System Implementing Electron Beam and Sputter Technology KW - Thin Film Technology KW - Ion-assisted PVD KW - Plasma-assisted PVD KW - Optical Multi-layers KW - Cluster Deposition System PY - 2004 SN - 0737-5921 SP - 86 EP - 90 PB - Society of Vacuum Coaters AN - OPUS4-3536 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Beck, Uwe A1 - Hertwig, Andreas A1 - Sahre, Mario A1 - Stockmann, Jörg M. A1 - Weise, Matthias T1 - Visualisierung von Oberflächenverunreinigungen und Schichtartefakten N2 - Die Oberflächentechnik ist eine Schlüsseltechnologie in nahezu zu allen industriellen Branchen. Mit Ausnahme der mechanischen Stabilität, die das Substrat bereitstellt, werden verschiedenartigste Funktionen materialsparend, zum Teil hochintegriert mit maßgeschneiderten Schichtdesigns unter Ausnutzung von Nano- und Quanteneffekten auf Oberflächen appliziert. Ein Großteil der Fertigungskosten in der Mikro- und Nanotechnik wird durch Reinräume und die Umsetzung ausgeklügelter Reinigungsstrategien zur Vermeidung von Restverschmutzungen und partikulären Belegungen verursacht, da diese unweigerlich zum Bauteilversagen führen. Die Validierung des Reinigungszustandes ist somit von zentraler Bedeutung für die Schichtqualität und Produktfunktionalität. Dies gilt in Abhängigkeit von der Applikation und den vertikalen Schicht- bzw. lateralen Strukturdimensionen sowohl für Fertigungsprozesse im Reinraum als auch für solche in robuster Umgebung. In der Praxis kommt es häufig vor, dass man mikroskopisch scheinbar saubere Substrate erst durch die Beschichtung „enttarnt" und dann Defekte oft mit bloßem Auge sichtbar werden. Noch problematischer ist der Einbau von Verunreinigungen während der Schichtabscheidung, die zunächst nicht sichtbar sind, dann aber zum Bauteilversagen führen. T2 - 11. ThGOT - Thementage Grenz- und Oberflächentechnik CY - Zeulenroda-Triebes, Germany DA - 15.09.2015 KW - Imaging Ellipsometrie KW - Mikroskopie KW - Schleimpflug-Optik PY - 2015 SN - 978-3-00-046056-2 SP - 15.9.2015, Block B, 1 EP - 5 AN - OPUS4-34280 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Beck, Uwe A1 - Hönig, D. A1 - Schneider, S. A1 - Domnick, R. A1 - Belzner, M. A1 - Hertwig, Andreas A1 - Stephanowitz, Ralph A1 - Sahre, Mario A1 - Weise, Matthias T1 - Fabry-Perot-based layer stacks for ellipsometric encoding - Embedded public, hidden, and forensic information for product authentication N2 - Public, hidden, and forensic features either encoded or directly legible are used for authentication. Fabry-Perot layer stacks as information carriers in combination with imaging ellipsometry as optical read-out system provide all-in-one anti-counterfeiting capability that may establish the new security level 'encoded forensic'. Different layer designs are described with regard to all three security levels: public features (e.g. color and tilt effect) perceptible by the human eye, hidden features (e.g. spectroscopic response in the UV or IR), and forensic features (ellipsometric quantities Ψ and Δ as a function of wavelength λ and angle of incidence AOI). Physically uncloneable functions (PUF) could be realized as a result of a multi-material and a multi-parameter deposition approach as well as by means of specific design features of the Fabry-Perot layer stack. Hence, they are not subject to any reverse engineering strategies. Examples of stratified, micro-structured, and laser-modified Fabry-Perot layer systems are considered that may be used at all perception levels (e.g. human eye, bar code reader, and imaging ellipsometry) for authentication against product counterfeiting and related areas. -------------------------------------------------------------------------------------------------------------------- Zur Authentifizierung werden offene, versteckte und forensische Merkmale entweder codiert oder direkt auslesbar verwendet. Mit Fabry-Perot Schichtsystemen als Informationsträger in Kombination mit der abbildenden Ellipsometrie als optischem Auslesesystem steht ein 'all-in-one' Fälschungsschutz-System zur Verfügung, das ein neues Sicherheitsniveau 'kodiert-forensisch' darstellt. Es werden unterschiedliche Schichtdesigns beschrieben, mit denen alle drei Sicherheitsniveaus realisiert werden können: offene Merkmale (z.B. Farbe und Kippeffekt), die mit dem menschlichen Auge wahrnehmbar sind, versteckte Merkmale (z.B. die spektrale Antwort im Sichtbaren oder im IR) sowie forensische Merkmale (ellipsometrische Größen Ψ und Δ als Funktion der Wellenlänge λ und des Einfallswinkels AOI). Physikalisch nicht klonbare Funktionen (PUF) können im Ergebnis einer Multi-Material- und Multi-Parameter Beschichtungsstrategie sowie durch spezifische Design-Merkmale des Fabry-Perot Schichtsystems realisiert werden. Folglich sind solche Schichtsysteme dem 'reverse engineering' nicht zugänglich. Es werden Beispiele für lateral ausgedehnte, mikrostrukturierte und Laser modifizierte Schichtsysteme auf verschiedenen Ausleseniveaus (menschliches Auge, Barcode-Lesegerät, abbildendes Ellipsometer) vorgestellt, die zur Authentifizierung von Produkten und verwandte Gebiete geeignet sind. KW - Fabry-Perot Schichten KW - Ellipsometrie KW - Produkt- und Markenschutz PY - 2012 DO - https://doi.org/10.1002/vipr.201200494 SN - 0947-076X SN - 1522-2454 VL - 24 IS - 4 SP - 6 EP - 11 PB - Wiley-VCH Verl. CY - Weinheim AN - OPUS4-26180 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Hertwig, Andreas A1 - Koter, Robert A1 - Weise, Matthias A1 - Beck, Uwe A1 - Reinstädt, Philipp A1 - Griepentrog, Michael A1 - Krüger, Jörg A1 - Picquart, M. A1 - Haro-Poniatowski, E. T1 - Femtosecond laser pulse irradiation effects on thin hydrogenated amorphous carbon layers N2 - The irradiation of ~0.9-µm-thick hydrogenated amorphous carbon (a-C:H) layers deposited on silicon substrates with single femtosecond (fs) laser pulses (35 fs pulse duration, 790 nm centre wavelength) in air is studied experimentally. Irradiation spots have been generated with different peak fluences and subsequently investigated by optical topometry, micro Raman spectroscopy and microscale mechanical indentation in order to evaluate their microscopic, topographical, structural and mechanical properties (e.g. elastic modulus). By this multi-method approach, a clear separation of different effects (delamination and graphitisation) becomes possible. The joint application of mechanical and spectroscopic techniques provides unique insights into the effects of the fs-laser radiation on the carbon layer. PY - 2013 DO - https://doi.org/10.1007/s00339-012-7170-5 SN - 0947-8396 VL - 112 IS - 1 SP - 9 EP - 14 PB - Springer CY - Berlin AN - OPUS4-28629 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Brand, U. A1 - Beckert, E. A1 - Beutler, A. A1 - Dai, G. A1 - Stelzer, C. A1 - Hertwig, Andreas A1 - Klapetek, P. A1 - Koglin, J. A1 - Thelen, R. A1 - Tutsch, R. T1 - Comparison of optical and tactile layer thickness measurements of polymers and metals on silicon or SiO2 N2 - The thickness measurement of transparent layers with optical techniques is very problematic. The observed deviations can easily reach 100% of the layer thickness to be measured. In order to analyse these deviations, tactile reference measurements have been developed. The proposed method is based on contact mode measurements with low contact pressure. With stylus instruments, this can be realized either by using the recommended tip radius of 2 µm and very small probing forces in the micronewton range (and low scanning speeds of 50 µm s-1) or by using the recommended probing force of 750 µN, but a large probing tip radius. Three metal layers on silicon or silicon dioxide and two polymer resist materials on a thin chromium adhesive layer on silicon are used as artefacts. The comparison of the optical measurements with the tactile reference values disclosed deviations of the optical measurements of up to 195% of the layer thickness. Layer thicknesses were between 200 nm and 4 µm. This paper analyses the deviations of two white light interference microscopes, one phase shift interference microscope, one confocal microscope, one autofocus sensor, a chromatic sensor, an interferometric film thickness sensor and one spectroscopic ellipsometer. Simple and well-known expressions for the description of the observed deviations are presented and discussed. The order of magnitude of the observed deviations can be described well by these correction formulas but further investigations are necessary in order to better understand the systematic deviations of optical surface measuring instruments on non-cooperating surfaces. KW - Layer thickness KW - Stylus instrument KW - Deformation KW - Polymer KW - Silicon KW - Silicon dioxide PY - 2011 DO - https://doi.org/10.1088/0957-0233/22/9/094021 SN - 0957-0233 SN - 1361-6501 VL - 22 IS - 094021 SP - 094021-1 - 094021-14 PB - IOP Publ. Ltd. CY - Bristol AN - OPUS4-24701 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bunte, J. A1 - Barcikowski, S. A1 - Burmester, T. A1 - Püster, T. A1 - Hertwig, Andreas A1 - Kautek, Wolfgang A1 - Krüger, Jörg A1 - Martin, Sven A1 - Spielmann, C. A1 - Lenner, M. A1 - Brose, M. T1 - Sicherer Umgang mit Ultrakurzpuls-Lasern, Teil 2: Sekundäre Gefährdungen PY - 2005 SN - 0945-8875 IS - 4 SP - 13 EP - 18 PB - Magazin-Verl. CY - Bad Nenndorf AN - OPUS4-11002 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bunte, J. A1 - Barcikowski, S. A1 - Burmester, T. A1 - Püster, T. A1 - Hertwig, Andreas A1 - Kautek, Wolfgang A1 - Krüger, Jörg A1 - Martin, Sven A1 - Spielmann, C. A1 - Lenner, M. A1 - Brose, M. T1 - Sicherer Umgang mit Ultrakurzpuls-Lasern, Teil 1: Primäre Gefährdungen PY - 2005 SN - 0945-8875 IS - 2 SP - 6 EP - 11 PB - Magazin-Verl. CY - Bad Nenndorf AN - OPUS4-11001 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Daminelli-Widany, Grazia A1 - Pentzien, Simone A1 - Hertwig, Andreas A1 - Krüger, Jörg T1 - Influence of film thickness on laser ablation of hydrogenated amorphous carbon films N2 - Single-pulse damage thresholds of hydrogenated amorphous carbon (a-C:H) films were measured for 8-ns laser pulses at 532-nm wavelength. Layer thicknesses from below the optical penetration depth to above the thermal diffusion length (60 nm–13 µm) were examined. After correction of the damage-threshold values for the fraction of energy effectively absorbed by the material, the damage threshold was found to increase linearly with the layer thickness, also for film thicknesses below the optical penetration depth of a-C:H. The threshold fluence reached the bulk value for a layer thickness equal to the thermal diffusion length. The thermal diffusion coefficient was obtained from fitting the experimental data. Several phenomena like graphitization, blistering, exfoliation, and ablation were observed for different fluence regimes and film thicknesses. PY - 2006 DO - https://doi.org/10.1007/s00339-005-3460-5 SN - 0340-3793 VL - 83 IS - 1 SP - 89 EP - 94 PB - Springer CY - Berlin AN - OPUS4-12022 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Ermilova, Elena A1 - Weise, Matthias A1 - Hertwig, Andreas T1 - Application of imaging ellipsometry and white light interference microscopy for detection of defects in epitaxially grown 4H-SiC layers N2 - Critical defects, also known as device killers, in wide bandgap semiconductors significantly affect the performance of power electronic devices. We used the methods imaging ellipsometry (IE) and white light interference microscopy (WLIM) in a hybrid optical metrology study for fast and non-destructive detection, classification, and characterisation of defects in 4H–SiC homoepitaxial layers on 4H–SiC substrates. Ellipsometry measurement results are confirmed by WLIM. They can be successfully applied for wafer characterisation already during production of SiC epilayers and for subsequent industrial quality control. T2 - EOS Annual Meeting (EOSAM 2022) CY - Porto DA - 12.09.2022 KW - Imaging ellipsometry KW - White light interference microscopy KW - 4H–SiC KW - Defects PY - 2023 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-574209 DO - https://doi.org/10.1051/jeos/2023018 SN - 1990-2573 VL - 19 IS - 1 SP - 1 EP - 8 PB - EDP Sciences AN - OPUS4-57420 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Ermilova, Elena A1 - Weise, Matthias A1 - Hertwig, Andreas T1 - Hybrid optical measurement technique for detection of defects in epitaxially grown 4H-SiC layers N2 - Recent developments in power electronics require the use of new wide bandgap compound semiconductor. We demonstrate the use of the ellipsometry and white light interference microscopy to detect defects in epitaxially grown SiC layers on SiC substrates. Such hybrid optical metrology methods can be used to better understand the mechanism of the development of the defects as well as their effects on the material´s optoelectronic properties. T2 - EOS Annual Meeting (EOSAM 2022) CY - Porto, Portugal DA - 12.09.2022 KW - Imaging ellipsometry KW - White light interference microscopy KW - Wide bandgap compound semiconductor KW - Epitaxially grown 4H-SiC layers PY - 2022 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-561113 DO - https://doi.org/10.1051/epjconf/202226610001 VL - 266 SP - 1 EP - 2 AN - OPUS4-56111 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -