TY - JOUR A1 - Albrecht, S. A1 - Schäfer, S. A1 - Lange, I. A1 - Yilmaz, S. A1 - Dumsch, I. A1 - Allard, S. A1 - Scherf, U. A1 - Hertwig, Andreas A1 - Neher, D. T1 - Light management in PCPDTBT:PC70BM solar cells: A comparison of standard and inverted device structures N2 - We compare standard and inverted bulk heterojunction solar cells composed of PCPDTBT:PC70BM blends. Inverted devices comprising 100 nm thick active layers exhibited short circuit currents of 15 mA/cm², 10% larger than in corresponding standard devices. Modeling of the optical field distribution in the different device stacks proved that this enhancement originates from an increased absorption of incident light in the active layer. Internal quantum efficiencies (IQEs) were obtained from the direct comparison of experimentally derived and modeled currents for different layer thicknesses, yielding IQEs of ~70% for a layer thickness of 100 nm. Simulations predict a significant increase of the light harvesting efficiency upon increasing the layer thickness to 270 nm. However, a continuous deterioration of the photovoltaic properties with layer thickness was measured for both device architectures, attributed to incomplete charge extraction. On the other hand, our optical modeling suggests that inverted devices based on PCPDTBT should be able to deliver high power conversion efficiencies (PCEs) of more than 7% provided that recombination losses can be reduced. KW - Organic solar cells KW - Inverted solar cells KW - PCPDTBT KW - Low band-gap KW - Optical modeling PY - 2012 DO - https://doi.org/10.1016/j.orgel.2011.12.019 SN - 1566-1199 VL - 13 IS - 4 SP - 615 EP - 622 CY - Amsterdam [u.a.] AN - OPUS4-25453 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Almalla, A. A1 - Hertwig, Andreas A1 - Fischer, Daniel A1 - Özcan Sandikcioglu, Özlem A1 - Witt, Julia T1 - Development of layer-by-layer assembled thin coatings on aluminium alloy AA2024-T3 for high resolution studies of local corrosion processes N2 - The aim of this study is to develop nanometer-thin epoxy-based films on aluminium alloy AA2024-T3 as a model coating system for high resolution corrosion studies. Spin coating was used for the layer-by-layer (LbL) deposition of poly-(ethylenimine) (PEI) and poly([o-cresyl glycidyl ether]-co-formaldehyde) (CNER) bilayers. The film chemistry and the cross-linking process were characterized by means of Fourier-transform infrared spectroscopy (FTIR). Ellipsometric data confirmed the linear increase of film thickness. The potentiodynamic polarization and electrochemical impedance spectroscopy (EIS) results indicate the improvement of the film barrier properties with increasing film thickness. Mapping of the topography and the volta potential was performed by means of scanning Kelvin probe force microscopy (SKPFM). The results indicate the presence of a homogeneous film structure, while the intermetallic phases can still be identified below the coating. The SKPFM Analysis confirmed that the model films are suitable for investigation of corrosion processes at the coating/metal interface. KW - Spectroscopy KW - Coatings KW - Electrochemistry KW - Microscopy KW - Resins PY - 2020 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-514627 DO - https://doi.org/10.1002/app.49826 SN - 0021-8995 VL - 137 IS - 48 SP - e49826-1 EP - e49826-9 PB - Wiley CY - New York, NY AN - OPUS4-51462 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - An, Q. A1 - Bäßler, Ralph A1 - Hertwig, Andreas A1 - Rehfeldt, Rainer A1 - Hidde, Gundula A1 - Otremba, Frank T1 - Investigation of Mechanical Stress and B10 Exposure on FKM Polymer N2 - Mechanical stress often accelerates the failure of polymer materials. The aim of this research is to study the interaction between the sealing material FKM and biofuels B10 (heating oil with 10% biodiesel). The mechanical stress test was carried out in a special apparatus. Both mechanical and non-mechanical stress tests were conducted on specimens at 20, 40, and 70 °C for 28 days to document changes in mass, volume, and tensile properties. Both increasing temperature and mechanical stress have a significant effect on the tensile strength of the FKM polymer when exposed to B10. The combination of increasing temperature and mechanical stress induced rupture within 2 h. It was also established that FKM polymer with pre-exposure in B10 survived longer during mechanical stress compared to specimens exposed only to air. With the support of infrared (IR) spectroscopy, we were able to confirm the penetration of B10 into the FKM polymer. T2 - TMS 2024 Annual Meeting & Exhibition Teilnahme mit Präsentation CY - Orlando-Florida / USA DA - 03.03.2024 KW - Biofuels KW - Sealing materials KW - Mechanical stress KW - Change in tensile properties PY - 2024 SN - 978-3-031-50349-8 DO - https://doi.org/10.1007/978-3-031-50349-8_108 SP - 1253 EP - 1261 PB - Springer CY - Orlando-Florida / USA AN - OPUS4-59638 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Beck, Uwe A1 - Baier, Jennifa A1 - Fischer, Daniel A1 - Griepentrog, Michael A1 - Hertwig, Andreas A1 - Hielscher-Hofinger, Stefan A1 - Stockmann, Jörg Manfred A1 - Weise, Matthias T1 - Mapping und Imaging modifizierter Oberflächen: Generische Kenngrößen, Fehlstellen, Reinigungszustand und Haftfestigkeit N2 - Der Vortrag widmet sich dem Mapping und Imaging modifizierter Oberflächen: generische Kenngrößen, Fehlstellen, Reinigungszustand und Haftfestigkeit. Es werden Untersuchungsmethoden zu ihrer Prüfung dargestellt. T2 - 37. ak-adp 2021 CY - Jena, Germany DA - 16.06.2021 KW - Qualitätssicherung KW - Mapping modifizierter Oberflächen KW - Imaging modifizierter Oberflächen KW - Generische Kenngrößen KW - Haftfestigkeit KW - Klebfestigkeit PY - 2021 SP - 1 EP - 10 AN - OPUS4-52893 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Beck, Uwe A1 - Griepentrog, Michael A1 - Hertwig, Andreas A1 - Hielscher, Stefan A1 - Weise, Matthias T1 - Auf dem Weg zu Industrie 4.0: Bestimmung von Messunsicherheitsbudgets in der Oberflächentechnik N2 - Vorgestellt wurde die Bestimmung von Messunsicherheitsbudgets für sehr unterschiedliche physikalische Größen, die in der Oberflächentechnik von hoher Relevanz sind: Stufenhöhe h, Schichtdicke d, Eindringhärte HIT und Haftfestigkeit. Die Unterschiede betreffen die Art der Prüfmethodik (optisch zerstörungsfrei vs. mechanisch invasiv/zerstörend), die laterale Größe des Integrationsgebietes der Messung (lokal: nano bis sub-mikro vs. global: mikro bis makro) und die Art der Bestimmung von Messunsicherheitsbudgets (physikalische Größen: direkt rückführbar; Werkstoffkenngröße: genormt; Systemkenngröße: genormt). Im Rahmen von Industrie 4.0 werden ausgehend der geforderten Spezifikation des beschichteten Produkts (Mittelwert mit Vertrauensbereich oder Mindestwert) durchgehende Toleranzbänder zur Oberflächenmodifizierung/Beschichtung des Substrats, einhergehend mit Prozessfenstern, die diese Toleranzbänder garantieren, erforderlich, die zuverlässig erfasst werden müssen. Die Frage der anzuwendenden Mess- und Prüftechnik und die damit notwendige Betrachtung von Messunsicherheitsbudgets ist für die Digitalisierung von Konditionierungs-, Zustands-, Regel- und Steuergrößen unverzichtbar. Mit Blick auf die Einhaltung von Prozessfenstern und die dafür notwendige Prozessführung wird technologisches Kern-Know-how digitalisiert, das es unbedingt zu schützen gilt. Nur lokale Netze können diese Sicherheit garantieren, in globalen Netzen ist die Datensicherheit bestenfalls maximierbar T2 - 14. ThGOT Thementage Grenz- und Oberflächentechnik und 6. Kolloquium Dünne Schichten in der Optik CY - Zeulenroda, Germany DA - 12.03.2019 KW - Oberflächentechnik KW - Messunsicherheit KW - Messtechnik KW - Prüftechnik KW - Haftfestigkeit PY - 2019 SN - 978-3-00-058187-8 VL - 2019 SP - 1 EP - 10 AN - OPUS4-47670 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Beck, Uwe A1 - Hertwig, Andreas A1 - Kormunda, M. A1 - Krause, Andreas A1 - Krüger, Hannes A1 - Lohse, Volkmar A1 - Nooke, Alida A1 - Pavlik, J. A1 - Steinbach, J. T1 - SPR enhanced ellipsometric gas monitoring on thin iron doped tin oxide layers N2 - In this work, thin iron doped tin oxide layers (3–6 nm) were investigated with regard to gas sensitivity by means of surface plasmon resonance (SPR) effect with ellipsometric readout. The experimental set-up was a Kretschmann configuration with gold as metal layer. The sensor system was exposed to different concentrations of methane in the low ppm range and the sensor response of an uncoated gold layer compared to a gold layer coated with iron doped tin oxide. The additional layer effects stability with regard to drift behavior of the sensor and an increase in sensitivity. Furthermore, the sensor is able to detect the toxic gas carbon monoxide in low concentration range (down to 0.5 ppm). The thin layers were investigated by X-ray photoelectron spectroscopy, secondary electron microscopy and spectroscopic ellipsometry. The possible mechanisms taking place on the surface are discussed. KW - Gas sensing KW - SPR effect KW - Iron doped tin oxide KW - Ellipsometry PY - 2011 DO - https://doi.org/10.1016/j.snb.2011.08.036 SN - 0925-4005 SN - 1873-3077 VL - 160 IS - 1 SP - 609 EP - 615 PB - Elsevier CY - Amsterdam [u.a.] AN - OPUS4-24826 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Beck, Uwe A1 - Hertwig, Andreas A1 - Männ, Marion T1 - Ellipsometry and Standardization: Validation of Models - Key Issue for Reference Coatings and Non-ideal Samples N2 - Standardisation of ellipsometry is mainly based on three documents: pioneering work at NIST [1] on film standards, a publicly available specification and stan-dard testing procedure [2] for real-world samples by BAM and a standard specification for integrated metrology by SEMI [3]. Other activities refer to inter-laboratory comparisons for selected layer/substrate systems and analytical methods including ellipsometry [4] and the development of combined standards for thickness d and step height h [5]. Generally, precision of ellipsmetry in terms of raw data Ψ and Δ meets the major demands for all ellipsometric principles (RPE, RAE, PME, RCE, NE). As a result, fingerprint capabilty is al-most perfect for various layer/substrate systems. However, this is not true for accuracy in terms of physical quantities such as thickness d, optical (n, k) and dielectric constans (ε1, ε2,) as modelling is required. Hence, the layer/substrate and material dependent validation of models is nowadays a key issue. In contrast to the sub-nanometer sensi-tivity in vertical direction, the effective lateral resolution of almost all ellipso-metric principles except for imaging null ellipsometry is rather poor, usually be-yond 100 µm. Hence, nanometer-scaled homogeneity testing and the measurement of micro- and nanopatterned structures is not feasible by standard configurations. KW - Ellipsometry KW - Standardisation KW - Reference Coatings KW - Non-ideal samples KW - Validation of models PY - 2008 IS - 2 SP - 6 EP - 7 AN - OPUS4-18673 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Beck, Uwe A1 - Hertwig, Andreas A1 - Männ, Marion T1 - Certified reference material BAM-L101 TiO2/SiO2 multilayer on BK7 glass PY - 2005 UR - http://www.rm-certificates.bam.de/de/rm-certificates_media/rm_cert_layer_and_surface/bam_l101repe.pdf SP - 1 EP - 22 PB - Bundesanstalt für Materialforschung und -prüfung CY - Berlin AN - OPUS4-25407 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Beck, Uwe A1 - Hertwig, Andreas A1 - Reiners, Georg T1 - Qualitätssicherung in der Oberflächen- und Schichttechnik mit optischen Verfahren T2 - Congress Industrielle Oberflächentechnik (CIO 2005) "Schichten auf Glas und Polymeren - Neue Anwendungen für Optik, Elektronik und Umwelt CY - Braunschweig, Deutschland DA - 2005-02-22 KW - Qualitätssicherung KW - Oberflächentechnik KW - Optische Verfahren PY - 2005 SP - 7-1-7-9 PB - Neue Materialien Niedersachsen CY - Göttingen AN - OPUS4-7694 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Beck, Uwe A1 - Hertwig, Andreas A1 - Reiners, Georg A1 - Weise, Matthias A1 - Hartung, J. A1 - Reinhold, E. A1 - Strümpfel, J. T1 - Ion-assisted vs. Plasma-assisted PVD: Preparation of Optical Multi-layers in a Versatile Cluster System Implementing Electron Beam and Sputter Technology KW - Thin Film Technology KW - Ion-assisted PVD KW - Plasma-assisted PVD KW - Optical Multi-layers KW - Cluster Deposition System PY - 2004 SN - 0737-5921 SP - 86 EP - 90 PB - Society of Vacuum Coaters AN - OPUS4-3536 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Beck, Uwe A1 - Hertwig, Andreas A1 - Reiners, Georg A1 - Weise, Matthias A1 - Hartung, J. A1 - Reinhold, E. A1 - Strümpfel, J. T1 - Ion Assisted vs. Plasma Assisted PVD: Preparation of Optical Multilayers in a Versatile Cluster System Implementing Electron Beam and Sputter Technology N2 - Functionality of optical systems requires optical coatings of high quality which have to be adapted to the application in terms of the performance of optical parameters such as reflectivity (AR, low, defined, high), the substrate material of interest (polymers, ceramics, and glass), the environmental conditions (such as temperature or humidity), and the service conditions (such spectral range and power density). Moreover, in many cases, additional non-optical requirements have to be met, including mechanical features such as scratch resistance, hardness and modulus. Consequently, thickness and overall uniformity requirements are steadily increasing. In general, these demands can usually not be achieved by a single film or coating. Instead, films with specific design features (such as gradients), layer stacks and multilayers are a prerequisite for high quality layers and their reliability. For the development of such layer systems, a versatile cluster deposition system consisting of three clusters and a cluster-to-cluster handler has been designed. Besides a PECVD cluster for DLC coatings, two PVD clusters implement ion assisted electron beam evaporation and plasmabased sputter technology. In addition to metallic films, preparation of oxide and nitride optical coatings (SiO2, TiO2, Ta2O5, ITO, Al2O3, TiN, AlN) in various process modifications (nonreactive, partially reactive, full-reactive; rf-, dc-, mf- mode; PEM control) has been carried out. Within this paper, the effect of several process parameters on layer quality (optical constants, density, and uniformity) is discussed for selected applications examples (AR- and HR coatings, applications at elevated temperatures and applications of enhanced mechanical performance). It has been shown that specific features of ion and plasma assisted PVD processes, including ion-beam and plasma preand post-treatment of substrates and layer systems, may widen the application range and improve functionality features of given coating/substrate systems. T2 - 47th Annual Technical Conference Proceedings CY - Dallas, TX, United States of America DA - 2004-04-24 KW - Ion assisted PVD KW - Optical multilayers KW - Plasma assisted PVD KW - Cluster deposition system PY - 2004 UR - http://www.knovel.com/knovel2/Toc.jsp?BookID=1082 SN - 0737-5921 SN - 1539-2236 SP - 86 EP - 90 CY - Albuquerque, NM AN - OPUS4-4148 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Beck, Uwe A1 - Hertwig, Andreas A1 - Sahre, Mario A1 - Stockmann, Jörg M. A1 - Weise, Matthias T1 - Visualisierung von Oberflächenverunreinigungen und Schichtartefakten N2 - Die Oberflächentechnik ist eine Schlüsseltechnologie in nahezu zu allen industriellen Branchen. Mit Ausnahme der mechanischen Stabilität, die das Substrat bereitstellt, werden verschiedenartigste Funktionen materialsparend, zum Teil hochintegriert mit maßgeschneiderten Schichtdesigns unter Ausnutzung von Nano- und Quanteneffekten auf Oberflächen appliziert. Ein Großteil der Fertigungskosten in der Mikro- und Nanotechnik wird durch Reinräume und die Umsetzung ausgeklügelter Reinigungsstrategien zur Vermeidung von Restverschmutzungen und partikulären Belegungen verursacht, da diese unweigerlich zum Bauteilversagen führen. Die Validierung des Reinigungszustandes ist somit von zentraler Bedeutung für die Schichtqualität und Produktfunktionalität. Dies gilt in Abhängigkeit von der Applikation und den vertikalen Schicht- bzw. lateralen Strukturdimensionen sowohl für Fertigungsprozesse im Reinraum als auch für solche in robuster Umgebung. In der Praxis kommt es häufig vor, dass man mikroskopisch scheinbar saubere Substrate erst durch die Beschichtung „enttarnt" und dann Defekte oft mit bloßem Auge sichtbar werden. Noch problematischer ist der Einbau von Verunreinigungen während der Schichtabscheidung, die zunächst nicht sichtbar sind, dann aber zum Bauteilversagen führen. T2 - 11. ThGOT - Thementage Grenz- und Oberflächentechnik CY - Zeulenroda-Triebes, Germany DA - 15.09.2015 KW - Imaging Ellipsometrie KW - Mikroskopie KW - Schleimpflug-Optik PY - 2015 SN - 978-3-00-046056-2 SP - 15.9.2015, Block B, 1 EP - 5 AN - OPUS4-34280 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Beck, Uwe A1 - Hönig, D. A1 - Schneider, S. A1 - Domnick, R. A1 - Belzner, M. A1 - Hertwig, Andreas A1 - Stephanowitz, Ralph A1 - Sahre, Mario A1 - Weise, Matthias T1 - Fabry-Perot-based layer stacks for ellipsometric encoding - Embedded public, hidden, and forensic information for product authentication N2 - Public, hidden, and forensic features either encoded or directly legible are used for authentication. Fabry-Perot layer stacks as information carriers in combination with imaging ellipsometry as optical read-out system provide all-in-one anti-counterfeiting capability that may establish the new security level 'encoded forensic'. Different layer designs are described with regard to all three security levels: public features (e.g. color and tilt effect) perceptible by the human eye, hidden features (e.g. spectroscopic response in the UV or IR), and forensic features (ellipsometric quantities Ψ and Δ as a function of wavelength λ and angle of incidence AOI). Physically uncloneable functions (PUF) could be realized as a result of a multi-material and a multi-parameter deposition approach as well as by means of specific design features of the Fabry-Perot layer stack. Hence, they are not subject to any reverse engineering strategies. Examples of stratified, micro-structured, and laser-modified Fabry-Perot layer systems are considered that may be used at all perception levels (e.g. human eye, bar code reader, and imaging ellipsometry) for authentication against product counterfeiting and related areas. -------------------------------------------------------------------------------------------------------------------- Zur Authentifizierung werden offene, versteckte und forensische Merkmale entweder codiert oder direkt auslesbar verwendet. Mit Fabry-Perot Schichtsystemen als Informationsträger in Kombination mit der abbildenden Ellipsometrie als optischem Auslesesystem steht ein 'all-in-one' Fälschungsschutz-System zur Verfügung, das ein neues Sicherheitsniveau 'kodiert-forensisch' darstellt. Es werden unterschiedliche Schichtdesigns beschrieben, mit denen alle drei Sicherheitsniveaus realisiert werden können: offene Merkmale (z.B. Farbe und Kippeffekt), die mit dem menschlichen Auge wahrnehmbar sind, versteckte Merkmale (z.B. die spektrale Antwort im Sichtbaren oder im IR) sowie forensische Merkmale (ellipsometrische Größen Ψ und Δ als Funktion der Wellenlänge λ und des Einfallswinkels AOI). Physikalisch nicht klonbare Funktionen (PUF) können im Ergebnis einer Multi-Material- und Multi-Parameter Beschichtungsstrategie sowie durch spezifische Design-Merkmale des Fabry-Perot Schichtsystems realisiert werden. Folglich sind solche Schichtsysteme dem 'reverse engineering' nicht zugänglich. Es werden Beispiele für lateral ausgedehnte, mikrostrukturierte und Laser modifizierte Schichtsysteme auf verschiedenen Ausleseniveaus (menschliches Auge, Barcode-Lesegerät, abbildendes Ellipsometer) vorgestellt, die zur Authentifizierung von Produkten und verwandte Gebiete geeignet sind. KW - Fabry-Perot Schichten KW - Ellipsometrie KW - Produkt- und Markenschutz PY - 2012 DO - https://doi.org/10.1002/vipr.201200494 SN - 0947-076X SN - 1522-2454 VL - 24 IS - 4 SP - 6 EP - 11 PB - Wiley-VCH Verl. CY - Weinheim AN - OPUS4-26180 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Hertwig, Andreas A1 - Koter, Robert A1 - Weise, Matthias A1 - Beck, Uwe A1 - Reinstädt, Philipp A1 - Griepentrog, Michael A1 - Krüger, Jörg A1 - Picquart, M. A1 - Haro-Poniatowski, E. T1 - Femtosecond laser pulse irradiation effects on thin hydrogenated amorphous carbon layers N2 - The irradiation of ~0.9-µm-thick hydrogenated amorphous carbon (a-C:H) layers deposited on silicon substrates with single femtosecond (fs) laser pulses (35 fs pulse duration, 790 nm centre wavelength) in air is studied experimentally. Irradiation spots have been generated with different peak fluences and subsequently investigated by optical topometry, micro Raman spectroscopy and microscale mechanical indentation in order to evaluate their microscopic, topographical, structural and mechanical properties (e.g. elastic modulus). By this multi-method approach, a clear separation of different effects (delamination and graphitisation) becomes possible. The joint application of mechanical and spectroscopic techniques provides unique insights into the effects of the fs-laser radiation on the carbon layer. PY - 2013 DO - https://doi.org/10.1007/s00339-012-7170-5 SN - 0947-8396 VL - 112 IS - 1 SP - 9 EP - 14 PB - Springer CY - Berlin AN - OPUS4-28629 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Brand, U. A1 - Beckert, E. A1 - Beutler, A. A1 - Dai, G. A1 - Stelzer, C. A1 - Hertwig, Andreas A1 - Klapetek, P. A1 - Koglin, J. A1 - Thelen, R. A1 - Tutsch, R. T1 - Comparison of optical and tactile layer thickness measurements of polymers and metals on silicon or SiO2 N2 - The thickness measurement of transparent layers with optical techniques is very problematic. The observed deviations can easily reach 100% of the layer thickness to be measured. In order to analyse these deviations, tactile reference measurements have been developed. The proposed method is based on contact mode measurements with low contact pressure. With stylus instruments, this can be realized either by using the recommended tip radius of 2 µm and very small probing forces in the micronewton range (and low scanning speeds of 50 µm s-1) or by using the recommended probing force of 750 µN, but a large probing tip radius. Three metal layers on silicon or silicon dioxide and two polymer resist materials on a thin chromium adhesive layer on silicon are used as artefacts. The comparison of the optical measurements with the tactile reference values disclosed deviations of the optical measurements of up to 195% of the layer thickness. Layer thicknesses were between 200 nm and 4 µm. This paper analyses the deviations of two white light interference microscopes, one phase shift interference microscope, one confocal microscope, one autofocus sensor, a chromatic sensor, an interferometric film thickness sensor and one spectroscopic ellipsometer. Simple and well-known expressions for the description of the observed deviations are presented and discussed. The order of magnitude of the observed deviations can be described well by these correction formulas but further investigations are necessary in order to better understand the systematic deviations of optical surface measuring instruments on non-cooperating surfaces. KW - Layer thickness KW - Stylus instrument KW - Deformation KW - Polymer KW - Silicon KW - Silicon dioxide PY - 2011 DO - https://doi.org/10.1088/0957-0233/22/9/094021 SN - 0957-0233 SN - 1361-6501 VL - 22 IS - 094021 SP - 094021-1 - 094021-14 PB - IOP Publ. Ltd. CY - Bristol AN - OPUS4-24701 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bunte, J. A1 - Barcikowski, S. A1 - Burmester, T. A1 - Püster, T. A1 - Hertwig, Andreas A1 - Kautek, Wolfgang A1 - Krüger, Jörg A1 - Martin, Sven A1 - Spielmann, C. A1 - Lenner, M. A1 - Brose, M. T1 - Sicherer Umgang mit Ultrakurzpuls-Lasern, Teil 1: Primäre Gefährdungen PY - 2005 SN - 0945-8875 IS - 2 SP - 6 EP - 11 PB - Magazin-Verl. CY - Bad Nenndorf AN - OPUS4-11001 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bunte, J. A1 - Barcikowski, S. A1 - Burmester, T. A1 - Püster, T. A1 - Hertwig, Andreas A1 - Kautek, Wolfgang A1 - Krüger, Jörg A1 - Martin, Sven A1 - Spielmann, C. A1 - Lenner, M. A1 - Brose, M. T1 - Sicherer Umgang mit Ultrakurzpuls-Lasern, Teil 2: Sekundäre Gefährdungen PY - 2005 SN - 0945-8875 IS - 4 SP - 13 EP - 18 PB - Magazin-Verl. CY - Bad Nenndorf AN - OPUS4-11002 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Daminelli-Widany, Grazia A1 - Pentzien, Simone A1 - Hertwig, Andreas A1 - Krüger, Jörg T1 - Influence of film thickness on laser ablation of hydrogenated amorphous carbon films N2 - Single-pulse damage thresholds of hydrogenated amorphous carbon (a-C:H) films were measured for 8-ns laser pulses at 532-nm wavelength. Layer thicknesses from below the optical penetration depth to above the thermal diffusion length (60 nm–13 µm) were examined. After correction of the damage-threshold values for the fraction of energy effectively absorbed by the material, the damage threshold was found to increase linearly with the layer thickness, also for film thicknesses below the optical penetration depth of a-C:H. The threshold fluence reached the bulk value for a layer thickness equal to the thermal diffusion length. The thermal diffusion coefficient was obtained from fitting the experimental data. Several phenomena like graphitization, blistering, exfoliation, and ablation were observed for different fluence regimes and film thicknesses. PY - 2006 DO - https://doi.org/10.1007/s00339-005-3460-5 SN - 0340-3793 VL - 83 IS - 1 SP - 89 EP - 94 PB - Springer CY - Berlin AN - OPUS4-12022 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Ermilova, Elena A1 - Hertwig, Andreas A1 - Döhring, Thorsten A1 - Stanik, Eva A1 - Cotroneo, Vincenzo A1 - Gibertini, Eugenio T1 - Ellipsometrical characterization of poly-dopamine layers considered for technical applications N2 - Although the organic molecule dopamine (3,4-dihydroxyphenethylamine) is commonly known as the “hormone of happiness”, thin films of poly-dopamine also have interesting technical properties. When produced by dip coating, the self-organizing layers grow in a reproducible thickness of single or multiple molecule monolayers of a few nanometer thickness only. In this work, we introduce a method of determining the layer thickness of poly-dopamine on mirrors for astronomical X-ray telescopes. This work is based on spectroscopic ellipsometry measurements and involves the development of an optical model for the poly-dopamine layers including the dielectric function. Thereby the complex refractive index of the produced layers was determined, covering the range from the ultraviolet to the near infrared spectral region. These measurement results and the corresponding technical challenges are presented in this contribution. Furthermore, an outlook to potential technical applications of this interesting material is given and poly-dopamine layers will make scientist and engineers hopefully happy as an innovative and fascinating technical solution for the future. T2 - SPIE PHOTONICS EUROPE CY - Strasbourg. France DA - 08.04.2024 KW - Polydopamine KW - Thin Solid Layers KW - X-ray optics KW - Spectroscopic Ellipsometry PY - 2024 SN - 978-1-5106-7344-1 DO - https://doi.org/10.1117/12.3015281 VL - 13013 SP - 1 EP - 8 PB - SPIE digital library AN - OPUS4-60954 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Ermilova, Elena A1 - Weise, Matthias A1 - Hertwig, Andreas T1 - Application of imaging ellipsometry and white light interference microscopy for detection of defects in epitaxially grown 4H-SiC layers N2 - Critical defects, also known as device killers, in wide bandgap semiconductors significantly affect the performance of power electronic devices. We used the methods imaging ellipsometry (IE) and white light interference microscopy (WLIM) in a hybrid optical metrology study for fast and non-destructive detection, classification, and characterisation of defects in 4H–SiC homoepitaxial layers on 4H–SiC substrates. Ellipsometry measurement results are confirmed by WLIM. They can be successfully applied for wafer characterisation already during production of SiC epilayers and for subsequent industrial quality control. T2 - EOS Annual Meeting (EOSAM 2022) CY - Porto DA - 12.09.2022 KW - Imaging ellipsometry KW - White light interference microscopy KW - 4H–SiC KW - Defects PY - 2023 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-574209 DO - https://doi.org/10.1051/jeos/2023018 SN - 1990-2573 VL - 19 IS - 1 SP - 1 EP - 8 PB - EDP Sciences AN - OPUS4-57420 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Ermilova, Elena A1 - Weise, Matthias A1 - Hertwig, Andreas T1 - Hybrid optical measurement technique for detection of defects in epitaxially grown 4H-SiC layers N2 - Recent developments in power electronics require the use of new wide bandgap compound semiconductor. We demonstrate the use of the ellipsometry and white light interference microscopy to detect defects in epitaxially grown SiC layers on SiC substrates. Such hybrid optical metrology methods can be used to better understand the mechanism of the development of the defects as well as their effects on the material´s optoelectronic properties. T2 - EOS Annual Meeting (EOSAM 2022) CY - Porto, Portugal DA - 12.09.2022 KW - Imaging ellipsometry KW - White light interference microscopy KW - Wide bandgap compound semiconductor KW - Epitaxially grown 4H-SiC layers PY - 2022 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-561113 DO - https://doi.org/10.1051/epjconf/202226610001 VL - 266 SP - 1 EP - 2 AN - OPUS4-56111 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Fischer, Daniel A1 - Hertwig, Andreas A1 - Beck, Uwe A1 - Lohse, V. A1 - Negendank, D. A1 - Kormunda, M. A1 - Esser, N. T1 - Thin SnOx films for surface plasmon resonance enhanced ellipsometric gas sensing (SPREE) N2 - Background: Gas sensors are very important in several fields like gas monitoring, safety and environmental applications. In this approach, a new gas sensing concept is investigated which combines the powerful adsorption probability of metal oxide conductive sensors (MOS) with an optical ellipsometric readout. This concept Shows promising results to solve the problems of cross sensitivity of the MOS concept. Results: Undoped tin oxide (SnOx) and iron doped tin oxide (Fe:SnOx) thin add-on films were prepared by magnetron sputtering on the top of the actual surface plasmon resonance (SPR) sensing gold layer. The films were tested for their sensitivity to several gas species in the surface plasmon resonance enhanced (SPREE) gas measurement. It was found that the undoped tin oxide (SnOx) shows higher sensitivities to propane (C3H8) then to carbon monoxide (CO). By using Fe:SnOx, this relation is inverted. This behavior was explained by a change of the amount of binding sites for CO in the layer due to this iron doping. For hydrogen (H2) no such relation was found but the sensing ability was identical for both layer materials. This observation was related to a different sensing mechanism for H2 which is driven by the Diffusion into the layer instead of adsorption on the surface. Conclusion: The gas sensing selectivity can be enhanced by tuning the properties of the thin film overcoating. A relation of the binding sites in the doped and undoped SnOx films and the gas sensing abilities for CO and C3H8 was found. This could open the path for optimized gas sensing devices with different coated SPREE sensors. KW - Doped tin oxide KW - Ellipsometry KW - Gas sensing KW - Surface plasmon KW - Resonance KW - Thin films KW - Transparent conductive oxides PY - 2017 DO - https://doi.org/10.3762/bjnano.8.56 SN - 2190-4286 VL - 8 SP - 522 EP - 529 AN - OPUS4-39391 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Fischer, Daniel A1 - Hertwig, Andreas A1 - Beck, Uwe A1 - Negendank, Detlef A1 - Lohse, Volkmar A1 - Kormunda, M. A1 - Esser, N. T1 - Dependence of the optical constants and the performance in the SPREE gas measurement on the thickness of doped tin oxide over coatings N2 - In this study, thickness related changes of the optical properties of doped tin oxide were studied. Two different sets of samples were prepared. The first set was doped with iron or nickel on silicon substrate with thicknesses of 29–56 nm, the second was iron doped on gold/glass substrate with 1.6–6.3 nm. The optical constants were determined by using spectral ellipsometry (SE) followed by modelling of the dielectric function with an oscillator model using Gaussian peaks. The analysis of the optical constants shows a dependence of the refraction and the absorption on the thickness of the doped tin oxide coating. In addition to the tin oxide absorption in the UV, one additional absorption peak was found in the near-IR/red which is related to plasmonic effects due to the doping. This peak shifts from the near-IR to the red part of the visible spectrum and becomes stronger by reducing the thickness, probably due to the formation of metal nanoparticles in this layer. These results were found for two different sets of samples by using the same optical model. Afterwards the second sample set was tested in the Surface Plasmon Resonance Enhanced Ellipsometric (SPREE) gas measurement with CO gas. It was found that the thickness has significant influence on the sensitivity and thus the adsorption of the CO gas. By increasing the thickness from 1.6 nm to 5.1 nm, the sensing ability is enhanced due to a higher coverage of the surface with the over coating. This is explained by the high affinity of CO molecules to the incorporated Fe-nanoparticles in the tin oxide coating. By increasing the thickness further to 6.3 nm, the sensing ability drops because the layer disturbs the SPR sensing effect too much. T2 - 7th International Conference on Spectroscopic Ellipsometry (ICSE-7) DA - 06.06.2016 KW - Surface plasmon resonance KW - Spectroscopic ellipsometry KW - Doped tin oxide KW - Gas sensing KW - Plasmonic absorption PY - 2017 DO - https://doi.org/10.1016/j.apsusc.2016.11.188 SN - 0169-4332 VL - 421, Teil B SP - 480 EP - 486 PB - Elsevier B.V. AN - OPUS4-42692 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Florian, Camilo A1 - Fischer, Daniel A1 - Freiberg, K. A1 - Duwe, M. A1 - Sahre, Mario A1 - Schneider, S. A1 - Hertwig, Andreas A1 - Krüger, Jörg A1 - Rettenmayr, M. A1 - Beck, Uwe A1 - Undisz, A. A1 - Bonse, Jörn T1 - Single Femtosecond Laser-Pulse-Induced Superficial Amorphization and Re-Crystallization of Silicon N2 - Superficial amorphization and re-crystallization of silicon in <111> and <100> orientation after irradiation by femtosecond laser pulses (790 nm, 30 fs) are studied using optical imaging and transmission electron microscopy. Spectroscopic imaging ellipsometry (SIE) allows fast data acquisition at multiple wavelengths and provides experimental data for calculating nanometric amorphous layer thickness profiles with micrometric lateral resolution based on a thin-film layer model. For a radially Gaussian laser beam and at moderate peak fluences above the melting and below the ablation thresholds, laterally parabolic amorphous layer profiles with maximum thicknesses of several tens of nanometers were quantitatively attained. The accuracy of the calculations is verified experimentally by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (STEM-EDX). Along with topographic information obtained by atomic force microscopy (AFM), a comprehensive picture of the superficial re-solidification of silicon after local melting by femtosecond laser pulses is drawn. KW - Femtosecond laser KW - Silicon KW - Amorphization KW - Crystallization KW - Spectroscopic imaging ellipsometry PY - 2021 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-523687 UR - https://www.mdpi.com/1996-1944/14/7/1651 DO - https://doi.org/10.3390/ma14071651 SN - 1996-1944 VL - 14 IS - 7 SP - 1651-1 EP - 1651-21 PB - MDPI AG CY - Basel, Switzerland AN - OPUS4-52368 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Gawek, Marcel A1 - Szymoniak, Paulina A1 - Hülagü, Deniz A1 - Hertwig, Andreas A1 - Schönhals, Andreas T1 - Molecular Mobility of Thin Films and the Adsorbed Layer of Poly(2-vinylpyridine) N2 - The molecular dynamics of thin films and the adsorbed layer of poly(2-vinylpyridine) (P2VP) were investigated using broadband dielectric spectroscopy (BDS) and spectroscopic ellipsometry. Thin films of P2VP were prepared on silicon substrates and characterized to understand the influence of film thickness on the thermal glass transition temperature (Tg) and molecular mobility. The ellipsometric study revealed a decrease in Tg with decreasing film thickness, attributed to the enhanced mobility at the polymer/air interface. The adsorbed layer, prepared via the solvent leaching approach, exhibited a higher Tg compared to the bulk, indicating reduced molecular mobility due to strong polymer substrate interactions. The dielectric measurements were carried out in two different electrode configurations, crossed electrode capacitors (CEC) and nanostructured electrodes (NSE), where the latter allows for a free surface layer at the polymer/air interface. The relaxation rates of the α-relaxation measured in the CEC geometry collapse into one chart independent from the film thickness. For the thin films measured in the NSE arrangement the relaxation rates slow down with decreasing film thickness which was discussed as related to a stronger interaction of the P2VP segments with the native SiO2 at the surface of the silicon substrate compared to aluminum. It is worth to note that the effect of the enhanced mobility at the polymer/air interface is not observed in the dielectric measurements. BDS measurements in NSE geometry identified an additional relaxation process (α*-relaxation) in thin films, which was more pronounced in the adsorbed layer. This process is hypothesized to be related to molecular fluctuations within the adsorbed layer including the adsorption/desorption dynamics of segments or to a Slow Arrhenius Process (SAP) related to the equilibration dynamics deep in the glassy state. KW - Thin polymer films PY - 2025 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-637181 DO - https://doi.org/10.1039/d5sm00539f SN - 1744-6848 SP - 1 EP - 12 PB - Royal Society of Chemistry (RSC) AN - OPUS4-63718 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Grundmann, Jana A1 - Bodermann, Bernd A1 - Ermilova, Elena A1 - Weise, Matthias A1 - Hertwig, Andreas A1 - Klapetek, Petr A1 - Rafighdoost, Jila A1 - Pereira, Silvania F. T1 - Optical and tactile measurements on SiC sample defects N2 - Abstract. In power electronics, compound semiconductors with large bandgaps, like silicon carbide (SiC), are increasingly being used as material instead of silicon. They have a lot of advantages over silicon but are also intolerant of nanoscale material defects, so that a defect inspection with high accuracy is needed. The different defect types on SiC samples are measured with various measurement methods, including optical and tactile methods. The defect types investigated include carrots, particles, polytype inclusions and threading dislocations, and they are analysed with imaging ellipsometry, coherent Fourier scatterometry (CFS), white light interference microscopy (WLIM) and atomic force microscopy (AFM). These different measurement methods are used to investigate which method is most sensitive for which type of defect to be able to use the measurement methods more effectively. It is important to be able to identify the defects to classify them as critical or non-critical for the functionality of the end product. Once these investigations have been completed, the measurement systems can be optimally distributed to the relevant defects in further work to realize a hybrid analysis of the defects. In addition to the identification and classification of defects, such a future hybrid analysis could also include characterizations, e.g. further evaluation of ellipsometric data by using numerical simulations. KW - Compound semiconductors KW - Hybrid metrology KW - Material defects KW - Spectroscopic ellipsometry KW - Scanning probe microscopy KW - White-light interference microscopy PY - 2024 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-601220 DO - https://doi.org/10.5194/jsss-13-109-2024 SN - 2194-878X VL - 13 IS - 1 SP - 109 EP - 121 PB - Copernicus Publ. CY - Göttingen AN - OPUS4-60122 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Grundmann, Jana A1 - Ermilova, Elena A1 - Hertwig, Andreas A1 - Klapetek, Petr A1 - Pereira, Silvania F. A1 - Rafighdoost, Jila A1 - Bodermann, Bernd T1 - Optical and Tactile Measurements on SiC Sample Defects N2 - The different defect types on SiC samples are measured with various measurement methods including optical and tactile methods. The defect types investigated include particles, carrots and triangles and they are analyzed with imaging ellipsometry, coherent Fourier scatterometry and atomic force microscopy. Each of these methods measures different properties of the defects and they all together contribute to a complete analysis. T2 - SMSI 2023 - Sensor and Measurement Science International CY - Nuremberg, Germany DA - 08.05.2023 KW - Defects KW - Silicon carbide KW - Imaging ellipsometry KW - Atomic force microscopy KW - Coherent Fourier scatterometry PY - 2023 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-593397 SN - 978-3-9819376-8-8 DO - https://doi.org/10.5162/SMSI2023/D5.2 VL - 2023/D5 SP - 233 EP - 234 PB - AMA Service CY - Wunstorf AN - OPUS4-59339 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Hochempfindliche Detektion von Gasen mittels SPR-Sensoren mit ellipsometrischen Messprinzip T2 - EFDS-Workshop "Analyse von Spurenverunreinigungen auf Oberflächen und in Gasen" CY - Dresden, Germany DA - 2013-12-02 PY - 2013 AN - OPUS4-30312 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Accurate determination of film thickness and optical constants with ellipsometry T2 - Congrès International de Métrologie CY - Paris, France DA - 2013-10-07 PY - 2013 AN - OPUS4-30313 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Vergleichbarkeit, Zuverlässigkeit und Genauigkeit der Bestimmung von Schichtdicken und optischen Konstanten mit Ellipsometrie an nicht-idealen Proben T2 - Seminar Messunsicherheit, PTB Berlin CY - Berlin, Germany DA - 2013-03-20 PY - 2013 AN - OPUS4-30314 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Methoden zur optischen Analyse von dünnen Schichten mittels Ellipsometrie: Auswerteverfahren und Referenzmaterialien T2 - 7. VDI Fachtagung Messunsicherheit CY - Braunschweig, Deutschland DA - 2015-11-19 PY - 2015 AN - OPUS4-35111 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - IR ellipsometry - a new sampling technique in thin film analysis and nanotechnologies T2 - Sentech-Seminar on Thin Film Analysis CY - Dortmund, Germany DA - 2013-06-25 PY - 2013 AN - OPUS4-30594 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Accuracy, traceability, and standardization in spectroscopic ellipsometry N2 - Ellipsometry has been an extremely successful and fast expanding method in the past decades along with other related techniques using polarisation sensitive measurements. Opening new fields of application for a successful measurement technique brings some requirements and issues that have to be solved. From a metrological point of view, ellipsometry has the problem that uncertainties are difficult to determine for model-based analysis techniques in general. In this presentation, we will explore how the usefulness of polarimetric methods like ellipsometry can be increased. Ellipsometry as a method could profit from several current developments which will be discussed in this presentation: • Standardisation initiatives on national and international level developing standards for best practice when using ellipsometry. A series of at least six standards is currently developed on national German and international level covering different levels of sample complexity. • Projects on traceability of ellipsometry and structured surface spectrometry as well as new dielectric function database initiatives. • Metadata handling and data ontology providing a better framework for exchange and collaborative use of research data. We will also explore the quantification of measurement uncertainty using examples from projects in which BAM is involved. Examples will be presented of multilayer and non-ideal materials as well as the determination of layer properties for technical applications such as thin layer catalysts and complex polymers. The definition of reference materials will be discussed. T2 - 11th Workshop Ellipsometry (WSE 11) CY - Steyr, Austria DA - 06.09.2021 KW - Ellipsometry KW - Uncertainty KW - Surface analytics KW - Data science PY - 2021 AN - OPUS4-53295 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Characterisation of thin layers of Polydopamine used as functional coatings in X-Ray optics N2 - Polydopamine (PDA) is a biological / biomimetic polymer which has spiked considerable interest in recent years. Its monomer is an important neurotransmitter and it is one of the strongest glues produced by biological organisms. Polydopamine is a candidate for several applications, mainly in the field of biology and medicine, but also - recently - for layer coatings with optical, electrical, and mechanical function. In this work, we investigate PDA layers intended as reflectivity enhancers for mirror surfaces in X-ray astronomical observatories. It has previously been shown, that such X-ray telescopes can be improved by a coating of PDA in the thickness range of several nm. Accurate thickness determination is required to monitor and optimise the coating process. We use spectroscopic ellipsometry to determine first the dielectric function of the polydopamine layers using model coatings of sufficient thickness. This data is then used to accurately determine the layer thickness of much thinner PDA layers. This study resulted in data on the thickness and dielectric function of PDA layers that could lead to a better understanding of the correlation of layer thickness and layer properties depending on the process parameters. T2 - Deutsche Physikalische Gesellschaft - Frühjahrstagung CY - Berlin, Germany DA - 17.03.2024 KW - Ellipsometry KW - Polydopamine KW - Thin Polymer Layers KW - X-Ray Reflectometry KW - Biopolymers PY - 2024 AN - OPUS4-59760 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Determining thermal transitions in thin polymer layers by means of spectroscopic ellipsometry N2 - Thin polymer layers have enormous technical significance as polymer coatings on materials are very cost-effective for tailoring properties of surfaces. Apart from technical aspects in their use, thin polymer layers can be used to determine dimensional aspects in properties of material, such as confinement effects. In this work, we investigated several different polymer layer materials and determined their glass transition region by means of temperature-dependent spectroscopic ellipsometry. We have optimised our fitting procedure of the ellipsometric data produced in temperature ramp experiments. By this, we could measure the dependence of Tg on the layer thickness in a wide variety of thickness values, proving the existence of confinement effects in the investigated systems. We compare numerical methods for determining the location of the glass transition and discuss the possibilities of different analysis methods when determining thermal transitions. We also discuss the simultaneous existence of these transitions and annealing effects and the implications on the accuracy of the determined data. T2 - 12th Workshop Ellipsometry 2023 CY - Prague, Czech Republic DA - 18.09.2023 KW - Thin Films KW - Polymers KW - Ellipsometry KW - Themal Transitions PY - 2023 AN - OPUS4-58413 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Determination of the glass transition region of thin PVME films by means of spectroscopic ellipsometry N2 - In this presentation, we report on the Determination of the glass transition temperature of thin layers of Polyvinylmethylether (PVME) depending on the thickness of the polymer layer. The glass Transition of thin polymer layers is currently under much investigation due to the nano-confinement effects proposed to appear in dependence on the layer thicknesses in the nm range. The properties of the polymer, the temperature range, as well as the thicknesses range of the polymer layers pose a serious challenge to the investigation by means of spectroscopic ellipsometry. By careful choice of experimental parameters, we were able to investigate the thickness change by temperature of PVME layers in the range between 2 and 300 nm and in the temperature range between 200 K and 340 K. By optimizing the analysis process, we were able to determine Tg values within this parameter range with sufficient accuracy to investigate the Tg change due to confinement effects. Alongside the change of position of the glass transition with thickness, we discuss the details of the ellipsometric analysis and its implications for the resulting thermal properties of the thin polymer layers as well as the accuracy of the Tg value with respect to the method used in the analysis process. T2 - Workshop Ellipsometry 2018 CY - Chemnitz, Germany DA - 19.03.2018 KW - Polymers KW - PVME KW - Temperature dependent ellipsometry KW - Glass transition PY - 2018 AN - OPUS4-44672 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Calibration samples and the GUM-compliant determination of uncertainties in ellipsometry N2 - Ellipsometry is well known as a highly sensitive and reproducible surface analysis technique. However, in a context of metrological applications, the most important property of a measurement process is accuracy, relying on statistical precision, (reproducibility) and trueness (in an absolute sense versus a given standard). The latter is much more difficult to achieve. In this presentation, we discuss the possibility of establishing ellipsometry in a diverse metrological landscape by means of defining standard procedures and best practice methodologies for the measurement and for calibration purposes. The most important task of this approach is to determine the model-inherent uncertainty, originating from parameter coupling. We achieve this by means of sensitivity analysis of the parameters resulting from the fit process. We discuss the definition of reference materials by which accuracy can be made available for ellipsometry, passed along between ellipsometry laboratories and for other measurement techniques. The determination of uncertainty is presented in this work for a number of examples involving difficult analysis models employed for samples from different production environments. We present a standardization initiative with the goal to disseminate this work into an international standard alongside an inter-laboratory study comparing the results for complex samples gained by laboratories with different instrumentation. We also present the results gained within EURAMET projects focused on the metrology of materials with strong non-idealities used in photovoltaics and other energy technology. T2 - Workshop Ellipsometry 2018 CY - Chemnitz, Germany DA - 19.03.2018 KW - Ellipsometric metrology KW - Reference samples KW - Reference procedures KW - Standardization PY - 2018 AN - OPUS4-44674 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Standardised and referenced surface analysis with ellipsometry - Is ellipsometry a metrological tool? N2 - Ellipsometry is a valuable surface analysis tool with an unmatched sensitivity towards surface layer properties. In this presentation, an initiative is discussed to make ellipsometry also a metrological tool. This is usually seen as very difficult due to the model-based nature of the analysis process. By establishing standardisation and reference materials, ellipsometry can be made traceable and can also become a valuable part of the traceable thin film metrology landscape. This is important because this technique has much potential to determine complex material parameters much needed in the production of high-tech products. T2 - University (UNL), Engineering Department CY - Lincoln, Nebraska, USA DA - 06.11.2017 KW - Metrology KW - Spectroscopic Ellipsometry KW - Reference Materials KW - Traceability KW - Measurement Uncertainty PY - 2017 AN - OPUS4-43412 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Multi-methods surface analysis involving spectroscopic ellipsometry: New measurements for optical and energy applications N2 - Surface analysis is still gaining importance, as most modern technology is in essence surface and thin film technology. In microelectronics and optics but also in many fields of energy storage and conversion, thin surface layers or structured surfaces are key components. Optical surface measurements are useful because of their reliability, robustness, and scalability – properties, which are especially desirable in a production environment. However, many of these methods take require considerable effort in data analysis. Spectroscopic ellipsometry (SE) is maybe the prime example of this class of methods. To combine the advantages of SE with metrological trueness and traceability, we combine it in a group of other methods, such as electron microscopy, instrumental surface analysis, X-ray diffraction. This presentation will give an overview on the principles of SE, its available quantities and the general properties of this measurement technique. Several examples from current and past projects of BAM-6.7 will show how a measurement community involving ellipsometry can benefit many fields of interest, from polymer science to energy applications. In the context of creating a “measurement landscape”, standardisation and standard compliance play an important role. The efforts of BAM in standardisation and accrediting of ellipsometry will be shown demonstrating the possible impact on quality assurance in different fields of technology. T2 - Abteilungskolloquium 2018, BAM CY - BAM, Berlin, Germany DA - 12.12.2018 KW - Spectroscopic ellipsometry KW - Surface analysis KW - Thin film technology KW - Reference materials PY - 2018 AN - OPUS4-47671 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - ELENA: a European project for electrical nanoscale metrology in industry N2 - A competitive advantage in the semiconductors industry is gained through the exploitation of new materials and processes, translating into improved components’ performances. This requires a metrological infrastructure allowing reliable nanoscale characterisation of new materials and devices, particularly in terms of their electrical parameters and properties. Traceability and reliability of nanoscale measurements stand as a major challenge for electrical properties (i.e. resistance, impedance) using conductive atomic force microscopy (C-AFM) and scanning microwave microscopy (SMM) techniques. The non-destructive analysis nature of these two methods is of paramount importance for the characterization of devices and components. However, the state of the art still lacks established measurement protocols, easy to use reference standards, well-defined best practice guides and easy to use 3D models to assess environmental and external stimulation effects. Moreover, costly instrumentation, particularly for high-frequency measurements, still hinders efficient advancements in these directions. ELENA is a 3-years European project that aims at bringing solutions to the aforementioned difficulties. To achieve this goal, the project uses a combination of nanoscale electrodynamic scanning probe methods in combination with optical tools such as spectroscopic ellipsometry on several lateral length scales to determine the electrical properties of layers and small structures. T2 - ICSE-9: The 9th International Conference on Spectroscopic Ellipsometry CY - Beijing, China DA - 2022-05-21 KW - Imaging Ellipsometry KW - Electrical thin layers KW - Scanning Probe methods KW - Hybrid metrology PY - 2022 AN - OPUS4-55464 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - New analytic ways to characterise mesoporous thin layers used in electrocatalytic water splitting N2 - Mesoporous materials are needed in many applications where a high specific surface area and adsorptive behaviour is needed. Important examples are separation techniques and barrier layers and catalysts. Electrochemical water splitting is the key technology for producing green hydrogen and there is no foreseeable alternative to this process for producing elementary hydrogen from green electrical power. Water electrolysis can be divided into the anodic Oxygen Evolution Reaction (OER) and the cathodic Hydrogen Evolution Reaction (HER). Both processes have to be heavily optimised to a large extent to avoid energy losses caused by overvoltage. The development of electrodes for these processes is especially difficult due to the many boundary conditions. Water splitting is a catalytic as well as electrochemical process. The contact area between the electrolyte and the electrode must be maximised maintaining the stability of the surface. Side reactions must be suppressed, and effective gas transport must be ensured. The whole process has to be tolerant with respect to temperature, harsh chemical conditions from the electrolyte as well as high current densities. We present a hybrid analytical method combining several analytical techniques for determining the properties of thin layers of mixed oxides of the general composition Ir:TiOx. These materials are promising candidates for electrocatalytical top coatings of OER electrodes. To lower the costs of the electrolysers, the main goal is to lower the Ir content retaining the system efficiency. The main properties which are hard to determine are the porous volume fraction and the Ir:Ti element ratio. By a combination of electron microscopy, spectroscopic operando ellipsometry, ellipsometric porosimetry, and other techniques, we can determine key features of mesoporous thin layer materials. We aim to develop operando capable techniques used in process monitoring as well as measurement techniques optimised for accuracy. By developing reference materials, we support long term uptake of our methodology. This work can directly be used for optimising electrocatalytic layers and is a good example for the power of hybrid metrology for improving materials design. T2 - International Conference on Resource Chemistry CY - Alzenau, Germany DA - 11.03.2024 KW - Ellipsometry KW - Electrocatalytic Water Splitting KW - Mesoporous Materials KW - Electron Probe Microanalysis KW - Hydrogen Generation PY - 2024 AN - OPUS4-59764 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Ellipsometry as a production measurement tool N2 - Spectroscopic Ellipsometry is an enormously versatile measurement tool for surfaces and thin layers. We discuss the use of ellipsometry in the context of quality control in production processes of eletrconic devices. T2 - Photonics Days Berlin Brandenburg CY - Berlin, Germany DA - 09.10.2023 KW - Ellipsometry KW - Quality control KW - Metrology PY - 2023 AN - OPUS4-59837 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Ellipsometry as a tool for electrical metrology - Referencing electrical properties of thin layers with TCO materials N2 - Ellipsometry is a highly valuable technology for bridging different measurement methods. As a fast, highly sensitive, and non-destructive optical technique with low environmental requirements, it is ideal for transporting measurement accuracy and for up-scaling measurements in the production environment. It can be used for highly precise determination of properties, material identity and correctness confirmation, as well as defect detection. Comparable, traceable, and accurate electrical measurements, especially at small scales are one of the biggest challenges in the development of the electrical and electronic devices of the future. In this project, we develop structured thin layer systems of the transparent conductive material indium tin oxide (ITO) to prove the concept of using these systems as standards for conductivity and permittivity. The layers are produced in a reactive magnetron sputtering process from raw ITO targets with additional oxidation achieved by oxygen injection. We present results of a study correlating the coating process conditions with the properties of the final layer material. We found that especially the temperature development during coating is of key importance and determines the layer properties to a large extent. We will discuss questions of homogeneity and reproducibility of the coating processes used. The finished layers undergo lithographic structuring and etching to produce patterns to serve as reference structures for scanning probe electrical measurements. TCOs have a large variety of applications. In this work we also study the usability of ITO for other purposes and investigate the stability of this material under application conditions. T2 - 12th Workshop Ellipsometry 2023 CY - Prague, Czech Republic DA - 18.09.2023 KW - Thin Films KW - Transparent Conductive Oxides KW - Ellipsometry KW - Electrical Properties KW - Nanoelectronics PY - 2023 AN - OPUS4-58410 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - On the use of spectroscopic imaging ellipsometry for quantification and characterisation of defects in thin films for power electronics N2 - Compound semiconductors (CS) are promising materials for the development of high-power electrical applications. They have low losses, can withstand high temperatures and can operate at very high voltages and currents. This makes them a key technology for the electrification of many high energy applications, especially electromobility and HVDC power lines. The challenge with CS technology is that most of the process technology has to be developed anew to the high standards required by electronic applications. Today, compound semiconductors can be produced in thin layers on top of substrates fabricated from classical crystal growth processes that are already well established. A promising method for this is metal organic vapour phase epitaxy (MOVPE). With this method, many different compounds with semiconducting properties can be synthesized. Additionally, this process technology is a direct thin layer deposition method. Therefore, complex multilayer systems can be generated directly by the deposition process and without the need of doping after growing. There are a number of critical defects that can originate from the deposition process of these thin film devices. Within this project, we intend to develop new correlative imaging and analysis techniques to determine defect types, to quantify defect size and number density, as well as to characterise defects for process optimisation. We report here on the use of spectroscopic ellipsometry and imaging ellipsometry to investigate defects in several different compound semiconductor materials used in high-power electronic devices. The materials we investigated are β-Ga2O3, SiC, GaN, AlN, and AlGaN materials as well as oxidised SiC surfaces. All of these materials have their typical defects and require optimised measurement and analysis schemes for reliable detection and analysis. Spectroscopic ellipsometry is a highly sensitive method for determining the thicknesses and dielectric function of thin layers, yielding potentially a high number of microscopic properties. The combined method between ellipsometry and optical microscopy is called imaging ellipsometry and is especially powerful for the large amount of data it produces. We have analysed defects in SiC- and AlN-based thin film semiconductors as well as characterised the properties of different types of SiO2 layers created on top of SiC monocrystals. We developed ellipsometric models for the data analysis of the different semiconductor materials. If the defects have geometric features, it is useful to combine the ellipsometric analysis with topometry method like interference microscopy and scanning probe microscopy. We have successfully characterised function-critical defects in MOVPE SiC layers and correlated the findings with topography from WLIM measurements. We have developed an imaging ellipsometric measurement methodology that allows to estimate the relative defect area on a surface by a statistical raw data analysis. T2 - EMRS Spring Meeting 2024 - ALTECH 2024 CY - Strasbourg, France DA - 27.05.2024 KW - compound semiconductors KW - Ellipsometry KW - Layer Materials KW - Defect Analysis PY - 2024 AN - OPUS4-61005 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Characterisation of thin layers of Polydopamine used as functional coatings in X-Ray optics N2 - Polydopamine (PDA) is a biological / biomimetic polymer which has spiked considerable interest in recent years. Its monomer is an important neurotransmitter and it is one of the strongest glues produced by biological organisms. Polydopamine is a candidate for several applications, mainly in the field of biology and medicine, but also - recently - for layer coatings with optical, electrical, and mechanical function. In this work, we investigate PDA layers intended as reflectivity enhancers for mirror surfaces in X-ray astronomical observatories. It has previously been shown, that such X-ray telescopes can be improved by a coating of PDA in the thickness range of several nm. Accurate thickness determination is required to monitor and optimise the coating process. We use spectroscopic ellipsometry to determine first the dielectric function of the polydopamine layers using model coatings of sufficient thickness. This data is then used to accurately determine the layer thickness of much thinner PDA layers. This study resulted in data on the thickness and dielectric function of PDA layers that could lead to a better understanding of the correlation of layer thickness and layer properties depending on the process parameters. T2 - Deutsche Physikalische Gesellschaft - Frühjahrstagung CY - Berlin, Germany DA - 17.03.2024 KW - Polydopamine KW - Thin Solid Layers KW - X-ray optics KW - Spectroscopic Ellipsometry PY - 2024 AN - OPUS4-60955 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Neue Methoden in der Dünnschichtmesstechnik für mikroelektronische Anwendungen durch Mapping- und Imaging-Ellipsometrie T2 - OptecBB Handlungsfeldkonferenz CY - Berlin, Deutschland DA - 2014-06-27 PY - 2014 AN - OPUS4-32030 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Metrologie für die Dünnschicht- und Nanotechnologie Neue Anwendungen für optische Oberflächenmessungen T2 - Göttinger Messtechnisches Symposium CY - Göttingen, Deutschland DA - 2014-07-16 PY - 2014 AN - OPUS4-32031 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Characterisation of Non-ideal Samples with Spectroscopic Mapping and Imaging Ellipsometry T2 - Workshop Quantitative 3D-Mikroskopie von Oberflächen CY - Braunschweig, Germany DA - 2015-04-28 PY - 2015 AN - OPUS4-33400 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Reference coatings for thin film technology - beyond the state of the art T2 - 6th Workshop Ellipsometry CY - Berlin, Germany DA - 2011-02-02 PY - 2011 AN - OPUS4-23064 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Optical vs. mivroscopic properties of ECR and RF bias generated amoephous hydrogenated carbon films T2 - PSE CY - Garmisch-Partenkirchen, Germany DA - 2010-09-13 PY - 2010 AN - OPUS4-20869 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Optische Messtechnik an Mikrotopografien T2 - OptecBB Veranstaltungsreihe MPK CY - Potsdam, Germany DA - 2010-05-19 PY - 2010 AN - OPUS4-21275 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Blistering and layer modification of hydrogenated amorphous carbon layers induced by femtosecond laser pulse irration T2 - Bunsentagung 2011 CY - Berlin, Germany DA - 2011-06-02 PY - 2011 AN - OPUS4-23361 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Gas Monitoring with the SPR Effect and Ellipsometric Detection T2 - Third NanoCharm Workshop an Non-Destructive Real Time Process Control CY - Berlin, Germany DA - 2010-10-13 PY - 2010 AN - OPUS4-22110 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Interaction area dependence of the ablation threshold of ion doped glass T2 - EMRS Spring Meeting 2003 CY - Strasbourg, France DA - 2003-06-10 PY - 2003 AN - OPUS4-4323 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Surface damage and color centers generated by femtosecond pulses in borosilicate glass and silica T2 - 7th International Conference on Laser Ablation (COLA' 03) CY - Hersonissos, Greece DA - 2003-10-05 PY - 2003 AN - OPUS4-4324 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Qualitätssicherung für Schichtsysteme aus Ionenstrahl- und Plasmaprozessen mit optischen Methoden T2 - 12. Bundesdeutsche Plasmatagung CY - Braunschweig, Germany DA - 2005-03-21 PY - 2005 AN - OPUS4-7292 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Laser Safety: Ablation thresholds of fs-Pulses vs. optical constants evaluated by spectroscopic ellipsometry T2 - 4. Workshop Ellipsometry CY - Berlin, Germany DA - 2006-02-20 PY - 2006 AN - OPUS4-10885 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Ultra-short Pulse Laser Safety - a Challenge to Materials Science T2 - Optical Systems Design CY - Jena, Germany DA - 2005-09-12 PY - 2005 AN - OPUS4-7894 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Hydrogen-containing amorphous carbon layers as optical materials for the NIR and MIR spectral range T2 - Plasma Surface Engineering (PSE 2006) CY - Garmisch-Partenkirchen, Germany DA - 2006-09-11 PY - 2006 AN - OPUS4-12468 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - MgF2-moderate temperature sol-gel deposition for optical UV-applications T2 - International Symposium on Fluorine Chemistry CY - Bremen, Germany DA - 2006-07-30 PY - 2006 AN - OPUS4-12524 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - MgF2 moderate temperature sol-gel deposition for optical UV-applications T2 - BESSY Usertreffen CY - Berlin, Germany DA - 2006-12-07 PY - 2006 AN - OPUS4-14221 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Certification of reference materials and validation of reference procedures - challenges on ellipsometry T2 - ICSE - 4 CY - Stockholm, Sweden DA - 2007-06-11 PY - 2007 AN - OPUS4-14711 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Moderate temperrature sol-gel deposition of fluoride films for optical UV-applications: an ellipsometrc study on homogeneity T2 - International Conference on Spectroscopic Ellipsoemtry CY - Stockholm, Sweden DA - 2007-06-11 PY - 2007 AN - OPUS4-14955 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Certification of reference materials and validation of reference procedures: challenges on ellipsometry T2 - International Conference on Spectroscopic Ellipsoemtry CY - Stockholm, Sweden DA - 2007-06-11 PY - 2007 AN - OPUS4-14957 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Qualitätssicherung mit Optischen Methoden T2 - OptecBB Jahrestreffen CY - Mittenwalde, Germany DA - 2007-12-06 PY - 2007 AN - OPUS4-16473 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Standardisation in the analysis of complex thin film systems with ellipsometry T2 - Workshop Ellipsometry 2012 CY - Leipzig, Germany DA - 2012-03-05 PY - 2012 AN - OPUS4-25685 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Standardisation in the analysis of complex thin film systems with ellipsometry T2 - Workshop Ellipsometry 2012 CY - Leipzig, Germany DA - 2012-03-05 PY - 2012 AN - OPUS4-25686 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - On the use of plasma-deposited thin films for gas sensors with read-out based on the SPR effect T2 - PSE 2012, 13th International Conference on Plasma Surface Engineering CY - Garmisch-Partenkirchen, Germany DA - 2012-09-10 PY - 2012 AN - OPUS4-25971 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Charakterisierung von Oberflächen und dünnen Schichten mit Ellipsometrie T2 - BLiX-Seminar, TU Berlin CY - Berlin, Germany DA - 2012-07-10 PY - 2012 AN - OPUS4-26147 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Enhanced SPR-ellipsometric gas sensors with doped dielectric layers T2 - ICSE 6 Konferenz CY - Kyoto, Japan DA - 2013-05-26 PY - 2013 AN - OPUS4-28802 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Enhanced SPR-ellipsometric gas sensors with doped dielectric layers T2 - ICSE 6 Konferenz CY - Kyoto, Japan DA - 2013-05-26 PY - 2013 AN - OPUS4-28803 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Gasdetektion mit komplexen SPR-Sensoren und ellipsometrischem Messprinzip T2 - Bunsentagung 2013 CY - Karlsruhe, Germany DA - 2013-05-09 PY - 2013 AN - OPUS4-28804 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Determining Material Properties with Spectroscopic Ellipsometry N2 - In this lecture, an introduction will be given on Spectroscopic Ellipsometry, what quantities can be obtained with it, and how we use it in ELENA and other projects to determine functional parameters of thin layers at the nanoscale. T2 - Summer school ELENAM : metrology at the nanoscale CY - Fréjus, France DA - 02.06.2024 KW - Thin Layers KW - Ellipsometry KW - Nanotechnology KW - Electrical Paramters PY - 2024 AN - OPUS4-60247 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - On the use of spectroscopic imaging ellipsometry for quantification and characterisation of defects in thin films for power electronics N2 - Compound semiconductors (CS) are promising materials for the development of high-power electrical applications. They have low losses, can withstand high temperatures and can operate at very high voltages and currents. This makes them a key technology for the electrification of many high energy applications, especially electromobility and HVDC power lines. The challenge with CS technology is that most of the process technology has to be developed anew to the high standards required by electronic applications. Today, compound semiconductors can be produced in thin layers on top of substrates fabricated from classical crystal growth processes that are already well established. A promising method for this is metal organic vapour phase epitaxy (MOVPE). With this method, many different compounds with semiconducting properties can be synthesized. Additionally, this process technology is a direct thin layer deposition method. Therefore, complex multilayer systems can be generated directly by the deposition process and without the need of doping after growing. There are a number of critical defects that can originate from the deposition process of these thin film devices. Within this project, we intend to develop new correlative imaging and analysis techniques to determine defect types, to quantify defect size and number density, as well as to characterise defects for process optimisation. We report here on the use of spectroscopic ellipsometry and imaging ellipsometry to investigate defects in several different compound semiconductor materials used in high-power electronic devices. The materials we investigated are β-Ga2O3, SiC, GaN, AlN, and AlGaN materials as well as oxidised SiC surfaces. All of these materials have their typical defects and require optimised measurement and analysis schemes for reliable detection and analysis. Spectroscopic ellipsometry is a highly sensitive method for determining the thicknesses and dielectric function of thin layers, yielding potentially a high number of microscopic properties. The combined method between ellipsometry and optical microscopy is called imaging ellipsometry and is especially powerful for the large amount of data it produces. We have analysed defects in SiC- and AlN-based thin film semiconductors as well as characterised the properties of different types of SiO2 layers created on top of SiC monocrystals. We developed ellipsometric models for the data analysis of the different semiconductor materials. If the defects have geometric features, it is useful to combine the ellipsometric analysis with topometry method like interference microscopy and scanning probe microscopy. We have successfully characterised function-critical defects in MOVPE SiC layers and correlated the findings with topography from WLIM measurements. We have developed an imaging ellipsometric measurement methodology that allows to estimate the relative defect area on a surface by a statistical raw data analysis. Compound semiconductors (CS) are promising materials for the development of high-power electrical applications. They have low losses, can withstand high temperatures and can operate at very high voltages and currents. This makes them a key technology for the electrification of many high energy applications, especially electromobility and HVDC power lines. The challenge is that most of the process technology has to be developed specifically and tailored to the high standards required by electronic applications. Today, many different CS materials can be produced in thin layers on top of substrates fabricated from classical crystal growth processes that are already well established. A promising method for this is metal organic vapour phase epitaxy (MOVPE). This technology is a direct thin layer deposition method capable of producing complex multilayer systems directly from one deposition process without the need of doping after growing. There are a number of critical defects that can originate from the deposition process when targeting electronic thin film devices. Within this project, we intend to develop new correlative imaging and analysis techniques to determine defect types, to quantify defect size and density, as well as to characterise defects for further process optimisation. We report here on the use of spectroscopic and multispectral imaging ellipsometry to investigate defects in several different compound semiconductor materials used in high-power electronic devices. The materials we investigated are β-Ga2O3, SiC, GaN, AlN, and AlGaN as well as oxidised SiC. All of these materials have their typical defects and require optimised measurement and analysis schemes for reliable detection and analysis. Spectroscopic ellipsometry is a highly sensitive method for determining the thicknesses and dielectric function of thin layers, yielding potentially a high number of microscopic properties. The combined method between ellipsometry and optical microscopy is known as imaging ellipsometry and is especially powerful for the large amount of data it produces. We have analysed defects in SiC- and AlN-based thin film semiconductors as well as characterised the properties of different types of SiO2 layers created on top of SiC monocrystals. We developed ellipsometric models for the data analysis of the different semiconductor materials. If the defects have geometric features, it is useful to combine the ellipsometric analysis with topometry methods like interference microscopy and scanning probe microscopy. We have successfully characterised function-critical defects in MOVPE SiC layers and correlated the findings with topography from WLIM measurements. We have developed an imaging ellipsometric measurement methodology that allows to estimate the relative defect area on a surface by a statistical raw data analysis. T2 - EMRS Spring Meeting 2024 - ALTECH 2024 CY - Strasbourg, France DA - 27.05.2024 KW - Ellipsometry KW - Power Electronics KW - Layer Materials KW - Defect Analysis PY - 2024 AN - OPUS4-60266 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Accuracy on all scales: Hybrid metrology for micro- and nanomanufacturing N2 - In this presentation, we discuss hybrid metrology and correlative imaging. These techniques are used to improve the design and quality monitoring of nanomaterials used in energy technology and for referencing the properties of nanoparticles. T2 - EMN for Advanced Manufacturing workshop CY - Berlin, Germany DA - 22.05.2024 KW - Nanotechnology KW - Nanoanalytics KW - Correlative Spectroscopy KW - Correlative Imaging PY - 2024 AN - OPUS4-60240 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Measurement of Porous TiO2 Layers with spectroscopic ellipsometry – a multi-method study N2 - By means of an effective medium (EMA) based approach, it is possible to use spectroscopic ellipsometry to determine the mixing ratios between air and material in porous dielectrics and calculate a quantitative value of the porosity for these materials. As this method is model-based, it is very difficult to provide a quantitative measure for the accuracy of porosity values determined by this method. Valuable additional information can often be obtained by combining ellipsometry with other complementary methods. In the present study, the ellipsometry results were validated by Electron Probe Microanalysis (EPMA) with the option of layer analysis (by the socalled “STRATAGem” approach), gravimetry, and electron microscopy. We analysed porous TiO2 thin layers synthesised by means of a template synthesis approach (evaporation induced self assembly). Ellipsometry measurements on porous samples are difficult to analyse due to the complexity of the models necessary. Often it is difficult to decide if the measured data contains enough information to successfully determine the target quantities (mixing ratio, dielectric function of the matrix material). One method to decrease the complexity of the fit and therefore use the measurement data most efficiently is a multi-sample analysis. In the present case, multi-sample analysis was used for determining the porosity factors of the individual layers while using one common set of dielectric function values for the matrix in all cases. While the results of the fit analysis in this case can be used to show the feasibility and also the limitations of the multi-method approach, the porosity values themselves show a promising agreement between the independent methods. It can therefore be concluded that determining porosity values with ellipsometry is in accordance to other methods to the level of accuracy provided by the complementary methodologies. T2 - International conference on spectroscopic ellipsometry (ICSE-7) CY - Berlin, Germany DA - 06.06.2016 KW - Spectroscopic Ellipsometry KW - Electron Microscopy KW - Multi-method Metrology KW - Porous Materials KW - Thin Films KW - Titanium Dioxide PY - 2016 AN - OPUS4-37202 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Towards hydrogen economy: multimethod analysis and operando investigation of mesoporous iridium oxides films for electrocatalysis, EMPIR/EURAMET Project HyMet 16ENG03 N2 - In the face of rising energy demand and the impending climate change the development of a sustainable, fossil-free fuel and chemical production is of global importance. One possible goal is the development of electrochemical conversion processes using catalysts. Porous materials play an important role in such energy applications. The key to the development of improved catalysts is a better understanding of the relations between their performance, stability and physico-chemical properties. However, the complex morphology of such catalysts constitutes a challenge even for modern analytical techniques. Spectroscopic ellipsometry (SE) is a versatile method for studying material properties by using appropriate models (e.g. film thickness, optical and electronic properties). The fact that the material properties cannot be taken directly from the measured spectra, the developed models have to be validated. In a first step, the model for the ellipsometric fit studies of a calcination series of mesoporous iridium oxide films (300 – 600 °C) was investigated and validated with respect to their material properties. Moreover, the electronic structures of the catalysts reveal a direct correlation with electrochemical activities. The development of an environmental cell offers the possibility of investigations under real conditions. This will allow changes in the optical and electronic properties during the electrocatalytic oxygen evolution reaction. T2 - HyMet dissemination event CY - Online meeting DA - 17.11.2020 KW - Correlative ex-situ ellipsometric analysis KW - Ellipsometric operando investigation KW - Hydrogen economy KW - Mesoporous iridium oxides films KW - Oxygen evolution reaction PY - 2020 AN - OPUS4-51629 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Hertwig, Andreas T1 - A multi-method study of femtosecond laser modification and ablation of amorphous hydrogenated carbon coatings N2 - We report here the optical constants of ECR (MW) and RF generated a-C:H layers before and after laser irradiation. The work is described in the following publication: https://doi.org/10.1007/s00339-024-07980-z The data uploaded are the optical constants (n and k) of the a-C:H layers before (base) and after (ROIx) laser irradiation. Please see the article for the nomenclature of the data and for the methods applied ot produce the layers, laser shots, and OK data. KW - Spectroscopic ellipsometry KW - Amorphous hydrogenated carbon layers KW - Laser materials processing KW - Correlative imaging spectroscopy PY - 2024 DO - https://doi.org/10.5281/zenodo.13928596 PB - Zenodo CY - Geneva AN - OPUS4-61855 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Measurement of porous TiO2 layers with spectroscopic ellipsometry - a multi-method study N2 - By means of an effective medium (EMA) based approach, it is possible to use spectroscopic ellipsometry to determine the mixing ratios between air and material in porous dielectrics and calculate a quantitative value of the porosity for these materials. As this method is model-based, it is very difficult to provide a quantitative measure for the accuracy of porosity values determined by this method. Valuable additional information can often be obtained by combining ellipsometry with other complementary methods. In the present study, the ellipsometry results were validated by Electron Probe Microanalysis (EPMA) with the option of layer analysis (by the socalled “STRATAGem” approach), gravimetry, and electron microscopy. We analysed porous TiO2 thin layers synthesised by means of a template synthesis Approach (evaporation induced self assembly). Ellipsometry measurements on porous samples are difficult to analyse due to the complexity of the models necessary. Often it is difficult to decide if the measured data contains enough information to successfully determine the target quantities (mixing ratio, dielectric function of the matrix material). One method to decrease the complexity of the fit and therefore use the measurement data most efficiently is a multi-sample analysis. In the present case, multi-sample analysis was used for determining the porosity factors of the individual layers while using one common set of dielectric function values for the matrix in all cases. While the results of the fit analysis in this case can be used to show the feasibility and also the limitations of the multi-method approach, the porosity values themselves show a promising agreement between the Independent methods. It can therefore be concluded that determining porosity values with ellipsometry is in accordance to other methods to the level of accuracy provided by the complementary methodologies. T2 - ICSE-7, 7th International Conference on Spectroscopic Ellipsometry CY - Berlin, Germany DA - 5.6.2016 KW - Spectroscopic ellipsometry KW - Electrolysis KW - Catalysis KW - Thin film metrology KW - Porous materials PY - 2016 AN - OPUS4-39940 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Normung in der Oberflächen-und Schichttechnik N2 - Report über Normungsaktivitäten im Bereich der Messtechnk an Oberflächen und dünnen Schichten. Übersicht über Methoden und Vorstellung von laufenden Projekten mit Bezug zur Normung T2 - PlasmaGermany Herbstmeeting 2022 CY - Bielefeld, Germany DA - 07.11.2022 KW - Oberflächenmesstechnik KW - Spektroskopie KW - Ellipsometrie KW - XPS KW - Dünne Schichten PY - 2022 AN - OPUS4-56483 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - How can ellipsometry help us to understand ultrashort pulse laser material processing? N2 - Laser processing of materials is a key technology in many fields of modern production. Still, more work is needed to understand the mechanisms behind laser material interaction. Recently, ellipsometry has become a valuable tool for investigating materials pre and post laser irradiation. Imaging ellipsometry and time-resolved methods boost this work and open up the path to a much better understanding of light interaction with solid state surfaces. We use spectroscopic single-spot and imaging ellipsometry to investigate treated and untreated surfaces. The goal is to determine changes in the material dielectric function, as well as geometric changes in surface layers (oxidation, modification, ablation, blistering). A good knowledge of bulk dielectric functions is often needed to model processes caused by laser irradiation. Imaging ellipsometry can play an important role in the post-analysis of laser treated sites on surfaces if combined with other methods such as IR-spectroscopy, SEM, topometric methods, Raman-spectroscopy, and XPS. In this work, we present the results of several studies to investigate laser-treated materials by means of ellipsometry. We cover the following topics: • Ablation of amorphous carbon layers, role of intra-layer interference effects on the result • Amorphisation behaviour of c-Si, depending on the crystal orientation, • Understanding the role of bulk and surface properties on ablation behaviour of classical and multicomponent high-entropy metals, T2 - 13th Workshop on Spectroscopic Ellipsometry CY - Genova, Italy DA - 09.02.2026 KW - Ellipsometry KW - Laser Ablation KW - Femtosecond Technology KW - Surface and Thin Layer Technology KW - Laser Surface processing PY - 2026 AN - OPUS4-65521 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Hertwig, Andreas A1 - De Castro, F.A. T1 - Newsletter - Metrology for the manufacturing of thin films KW - Metrology KW - Thin films KW - Optoelectronics KW - Photovoltaics KW - Coatings technology KW - Traceability PY - 2012 UR - http://projects.npl.co.uk/optoelectronic_films/documents/EMRP%20ThinFilms_Newsletter%20Feb%202012.pdf IS - February SP - 1 EP - 4 AN - OPUS4-25505 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Hertwig, Andreas A1 - Ermilova, Elena T1 - Optical constants of a single AlN layer on Si N2 - Spectroscopic ellipsometry was used to determine the thickness and dielectric function of a Aluminium Nitride (AlN) layer on a Si wafer. The layer was determined to be 170 nm thick. The layer was provided by AIXTRON and manufactured by means of MOVPE. The data was created using a M2000DI spectroscopic ellipsometer from Woollam Co. Inc. Analysis was done using the CompleteEASE software. The model used is a multi-peak oscillator model for the AlN layer. The data resembles common database values for the material AlN. KW - Aluminium nitride KW - Thin solid layers KW - Spectroscopic ellipsometry KW - Compund semiconductors KW - MOVPE PY - 2024 UR - https://zenodo.org/records/12743500 DO - https://doi.org/10.5281/zenodo.12743499 PB - Zenodo CY - Geneva AN - OPUS4-60661 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas A1 - François, P. T1 - ELENA Project: Creating a simplified uncertainty calculation for industrial applications N2 - In this workpackage of the ELENA project, we develop a way to express the measurement uncertainty of nanoscale determination of electrical propserties. The method developed aims to be usable for industrial contexts and described in technical documents and standards drafts. Standards and reference samples are used to make traceable measurements available for the end user. T2 - Congrès International de Metrologie CY - Lyon, France DA - 06.03.2023 KW - Nanoscale measurements KW - Electrical properties KW - Optical measurements KW - Surfaces KW - Scanning probe measurements PY - 2023 AN - OPUS4-57155 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hertwig, Andreas A1 - Hinrichs, K. A1 - Beck, Uwe A1 - Esser, N. T1 - Editorial to the proceedings of the 7th conference on spectroscopic N2 - The 7th International Conference on Spectroscopic Ellipsometry (ICSE-7) was held in Berlin in June 2016, jointly organised by ICSE and BAM. The publication of the proceedings special issue in Applied Surface Science follows this event. In the special issue, about 100 articles on current topics of optics and surface science related to ellipsometry, polarimetry, and similar techniques are presented, underpinning the high significance of these techniques for many fields of materials science. T2 - 7th International Conference on Spectroscopic Ellipsometry, ICSE-7 CY - Berlin, Germany DA - 06.06.2016 KW - Spectroscopic ellipsomety PY - 2017 DO - https://doi.org/10.1016/j.apsusc.2017.04.081 SN - 0169-4332 VL - 2017 IS - 421 SP - 269 EP - 270 PB - Elsevier B.V. AN - OPUS4-42554 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hertwig, Andreas A1 - Krüger, Jörg A1 - Weise, Matthias A1 - Beck, Uwe T1 - Hydrogen-Containing Amorphous Carbon Layers as Optical Materials in the Near-IR Spectral Range N2 - Hydrogenated amorphous carbon layers were deposited on various substrates by means of a plasma CVD process with a RF substrate bias as well as an ECR plasma source. The optical properties of the a-C:H layers were obtained via spectroscopic ellipsometry and correlated with their mechanical and chemical properties. The layers from pure RF plasma exhibit a higher absorption constant in the visible spectral range and a higher refractive index. All layers are nearly transparent in the NIR spectral range making them candidates for optical thin layer systems. The laser damage behaviour of the a-C:H layers was investigated with ultrashort pulses. The damage thresholds were consistent with the absorption constants of the layers. Interesting damage morphologies were observed indicating a sensitivity of this experiment to sub-structures in the layer. KW - Kohlenstoffschichten KW - Optische Konstanten KW - Ellipsometrie KW - Laser-Material-Bearbeitung KW - Amorphous KW - Diamond-like carbon KW - Hydrocarbons KW - Laser ablation KW - Optical proper PY - 2007 SN - 1612-8850 SN - 1612-8869 VL - 4 IS - S1 SP - S76 EP - S82 PB - Wiley-VCH Verl. CY - Weinheim AN - OPUS4-14862 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas A1 - Martin, S. A1 - Kautek, Wolfgang A1 - Krüger, Jörg ED - Maruray, L. T1 - Ultra-short Pulse Laser Safety - a Challenge to Materials Science N2 - In this paper, safety-related experiments with ultra-short laser pulses (down to 30 fs) on various components (goggles, curtains) for laser protection are presented. The damage and failure behaviour of protective devices has been investigated dependent on practical conditions such as pulse duration, laser .uence, pulse number, and repetition rate. The e.ects of laser-irradiation on materials can be roughly divided into transient ones like laserinduced transmission (LIT) or short-lived colour centres and permanent damages like the stable colour centres and ablation. The former e.ects are particularly important for transparent devices like laser goggles. To obtain a complete overview on laser safety issues and the prevention of failure there are two important .elds of investigation: 1. the e.ects of laser radiation on human eyes and skin, and 2. on the possible protection materials. Both .elds have been addressed during the recently .nished German project SAFEST (safety aspects in femtosecond technology). The amount of safety data available in the ultrashort pulse region has been increased remarkably. This allows for a re-evaluation of known laser protection materials for this region of pulse durations and for the evaluation of new designs that promise high protection levels while being light-weight and convenient to use. T2 - Optical design and engineering II CY - Jena, Germany DA - 2005-09-13 PY - 2005 N1 - Serientitel: Proceedings of SPIE – Series title: Proceedings of SPIE IS - 5962 SP - 59622J-1 - 59622J-10 PB - SPIE CY - Bellingham AN - OPUS4-11593 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hertwig, Andreas A1 - Martin, Sven A1 - Krüger, Jörg A1 - Kautek, Wolfgang T1 - Interaction area dependence of the ablation threshold of ion-doped glass N2 - The laser ablation behaviour of ion-doped glass filter materials under irradiation with femtosecond laser pulses was investigated with respect to spot size and repetition rate. The damage threshold fluence of Schott BG18 depends on the size of the irradiated area. The effect is discussed in terms of a defect-site model. KW - Femtosecond KW - Laser KW - Materials processing KW - Ablation KW - Threshold KW - Glass PY - 2004 DO - https://doi.org/10.1016/j.tsf.2003.11.131 SN - 0040-6090 VL - 453-454 SP - 527 EP - 530 PB - Elsevier CY - Amsterdam AN - OPUS4-11046 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hertwig, Andreas A1 - Martin, Sven A1 - Krüger, Jörg A1 - Kautek, Wolfgang T1 - Surface damage and color centers generated by femtosecond pulses in borosilicate glass and silica N2 - Color center generation by femtosecond laser pulses (30 fs) is observed in a fluence range below the damage threshold in an alkali-free barium borosilicate (BBS) glass, and in a thin layer of SiO2 on a fused silica substrate. The color centers are characterized spectroscopically. The optical density of the color centers in BBS glass is by two orders of magnitude higher than that in silica. A healing process with a time constant of about 30 h can be found. PY - 2004 UR - http://www.sciencedirect.com/science/journal/0926860X DO - https://doi.org/10.1007/s00339-004-2634-x SN - 0947-8396 VL - 79 SP - 1075 EP - 1077 PB - Springer CY - Berlin AN - OPUS4-11047 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Hertwig, Andreas A1 - Martin, Sven A1 - Krüger, Jörg A1 - Spielmann, C. A1 - Lenner, M. A1 - Kautek, Wolfgang ED - Dausinger, F. ED - Lichtner, F. ED - Lubatschowski, H. T1 - Primary hazards and reliability of protective materials N2 - Femtosecond laser pulses are close to industrial use. The advantages of ultrashort laser pulses for micromachining applications especially in the case of dielectric and biological samples down to pulse durations of 5 fs have been established. The current international standards of laser safety are primarily concerned with CW and pulsed lasers down to the nanosecond range. Therefore, human tissue and laser-protection equipment was investigated with respect to its resistance and protection performance for femtosecond laser illumination down to 30 fs. This included filter glasses for laser protection eyewear, polymer and textile materials used in curtains and guards. Bulk absorber filters can provide enough protection against laser radiation, give a sufficiently broad absorption spectrum. Materials are damaged more easily by femtosecond laser radiation. The need for sufficient spectral broadness as well as the different damage thresholds have to be included in international laser safety standards. This work should trigger the development of novel eye-protection devices that are lighter and ergonomically more acceptable than present commercial models. KW - Lasersicherheit KW - Kurzpulslaser KW - Femtosekunden KW - Lasertechnik KW - Materialbearbeitung PY - 2004 SN - 3-540-20114-9 DO - https://doi.org/10.1007/b96440 SN - 0303-4216 N1 - Serientitel: Topics in applied physics – Series title: Topics in applied physics IS - 96 SP - 287 EP - 307 PB - Springer CY - Berlin AN - OPUS4-4661 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas A1 - Osterwald, Stephan A1 - Gerhold, Stefan T1 - Mess- und Prüfverfahren für Schichten und Schichtsysteme - Der DIN-Normausschuss 062-01-61 N2 - Die Funktionalität von modernen technischen Komponenten liegt meist in der Oberfläche und in Beschichtungen. Das Design und die Herstellungsqualität von Beschichtungen ist essenziell für die optischen, elektrischen, mechanischen und chemischen Eigenschaften von Bauteilen, sowie für den Korrosions- und Verschleißschutz. In diesem Gremium bearbeiten wir Normen für die Qualitätssicherung von dünnen Schichten verschiedener Art. Dabei betrachten wir Eigenschaften wie Schichtdicke, Zusammensetzung, Haltbarkeit, Korrosionsbeständigkeit und physikalische Parameter von dünnen Schichten mit sehr vielfältigen Techniken. Neben klassischen Verfahren aus der Galvanik und Schichtmesstechnik, werden dabei auch neuere spektroskopische Verfahren wie Ellipsometrie und THz-Reflektion bedeutend. Unser Gremium ist offen für neue Mitglieder aus der Oberflächen- und Beschichtungsgemeinschaft. T2 - ZVO Oberflächentage 2023 CY - Berlin, Germany DA - 13.09.2023 KW - Dünne Schichten KW - Galvanotechnik KW - Metallschichten KW - Messtechnik PY - 2023 AN - OPUS4-58432 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hirahara, Kenta A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Weise, Matthias A1 - Ermilova, Elena A1 - Schusterbauer, Robert A1 - Unterreiner, Andreas-Neil A1 - Hertwig, Andreas T1 - A multi-method study of femtosecond laser modification and ablation of amorphous hydrogenated carbon coatings N2 - e present a study on femtosecond laser treatment of amorphous hydrogen-containing carbon coatings (a-C:H). The coatings were deposited on silicon wafers by a plasma-assisted chemical vapour deposition (PA-CVD), resulting in two different types of material with distinct properties (referred to as “absorbing” and “semi-transparent” coatings in the following). The samples were laser-treated with single fs-laser pulses (800 nm center wavelength, 35 fs pulse duration) in the ablative regime. Through a multi-method approach using topometry, Raman spectroscopy, and spectroscopic imaging ellipsometry, we can identify zones and thresholds of diferent fuence dependent efects and have access to the local dielectric function. The two coating materials react signifcantly diferent upon laser treatment. We determined the (non-ablative) modifcation threshold fuence for the absorbing coating as 3.6 × 10−2 Jcm−2 and its ablation threshold as 0.22 Jcm−2. The semi-transparent coating does not show such a low-fuence modifcation but exhibits a characteristic interference-based intra-flm ablation mechanism with two distinguishable ablation thresholds at 0.25 and 0.28 Jcm−2, respectively. The combination of tailored layer materials and correlative imaging spectroscopic methods delivers new insights into the behaviour of materials when treated with ultrashort-pulse laser radiation KW - Amorphous Hydrogenated Carbon Coatings KW - Correlative Imaging Measurement Techniques KW - Hybrid Metrology KW - Imaging Spectroscopy KW - Spectroscopic Ellipsometry KW - Ultra-short Pulse Laser Materials Processing PY - 2024 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-617829 DO - https://doi.org/10.1007/s00339-024-07980-z VL - 130 IS - 12 SP - 1 EP - 17 PB - Springer Science and Business Media LLC AN - OPUS4-61782 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hönig, D. A1 - Schneider, S. A1 - Domnick, R. A1 - Belzner, M. A1 - Beck, Uwe A1 - Hertwig, Andreas A1 - Stephanowitz, Ralph A1 - Weise, Matthias ED - Uhlmann, E. T1 - Ellipsometrische Codierung & Fabry-Perot Schichtsysteme mit offenen, versteckten und forensischen Merkmalen zur Produkt-Authentifizierung T2 - 3. Internationaler Kongress - Sichere Identität CY - Berlin, Deutschland DA - 2011-04-05 KW - Ellipsometric encoding KW - Fabry-Perot layer stacks KW - Product authentification PY - 2011 SP - 1 EP - 4(?) CY - Berlin AN - OPUS4-23306 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hönig, D. A1 - Schneider, S. A1 - Domnick, R. A1 - Belzner, M. A1 - Beck, Uwe A1 - Hertwig, Andreas A1 - Stephanowitz, Ralph A1 - Weise, Matthias T1 - Optical layer systems for product authentication: interference, scattering, light diffusion and ellipsometric encoding as public, hidden and forensic security features N2 - Embedding of information on surfaces is state of the art for identification testing in which public, hidden and forensic features are used. In many instances, the legal authentication of a product, a material or a document is required. Among the surface-based encoded labels, bar codes and data matrices are most frequently applied. They are publicly visible. The material itself is irrelevant, only a sufficient optical contrast is required. However, a strong material dependence of the label can be achieved by means of Fabry-Perot layer stacks. Stack designs are described with regard to all three security levels: public features (e.g. color and tilt effect) perceptible by the human eye, hidden features (e.g. optical response in a given spectral range) detectable by commonly available instruments and forensic features (ellipsometric quantities Ψ and Δ as a function of wavelength λ and angle of incidence AOI) only detectable by sophisticated instruments. Regarding material-correlated authentication, ellipsometric quantities Ψ and Δ are used as encoded forensic features for the first time. Hence, Fabry-Perot layer stacks as information carriers in combination with imaging ellipsometry as optical read-out system provide all-in-one anti-counterfeiting capabilities. T2 - PSE 2012 - 13th International conference on plasma surface engineering CY - Garmisch-Partenkirchen, Germany DA - 10.09.2012 KW - Fabry-Perot layers KW - Ellipsometry KW - Anti-counterfeiting PY - 2012 UR - http://www.pse-conferences.net/tl_files/pse2012/abstractupload/PSE2012-PO1001-ext.pdf SP - 1 EP - 4 AN - OPUS4-27304 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hülagü, Deniz A1 - Ermilova, Elena A1 - Weise, Matthias A1 - de Préville, Sophie A1 - Hoffmann, Johannes A1 - Morán-Meza, José A1 - Piquemal, Francois A1 - Hertwig, Andreas T1 - Characterization of electrical properties in microstructured ITO layers using spectroscopic ellipsometry N2 - Thin indium tin oxide (ITO) layers are essential in optoelectronics due to their good electrical conductivity, optical transparency in the visible and near infrared regions, substrate adherence and chemical stability. They are widely used in photovoltaic cells, displays, and organic LEDs, and as low emissivity coatings in smart windows and energy-efficient buildings. For nanophotonic devices, understanding the interplay of ITO’s optical and electrical properties is crucial. Electrical resistivity can be tuned by modifying deposition conditions and layer thickness. However, measuring these properties, especially on microstructured surfaces, remains challenging due to the issues like homogeneity and instability during etching. Spectroscopic ellipsometry (SE), a non-destructive and phase-sensitive optical technique, offers precise measurement of thin film thickness and dielectric properties. In this study, we investigated the layer thickness, optical constants, and sheet resistance of unstructured and microstructured ITO thin layers using SE. Unstructured layers were deposited via DC-magnetron sputtering on silicon (Si) substrates in argon (Ar) atmospheres with varying oxygen (O2) flows. This multi-technique approach enhances the understanding of ITO layer structuring and provides robust methodologies for correlating optical and electrical properties, advancing metrology for nanotechnology applications and material science. It also opens the pathway to new reference samples and calibration methods for electrical properties involving device-like structured samples. T2 - ICSE10 - 10th International Conference on Spectroscopic Ellipsometry CY - Boulder, CO, USA DA - 08.06.2025 KW - Ellipsometry KW - Indium tin oxide (ITO) KW - Scanning microwave microscopy (SMM) KW - Sheet resistance calibration standards KW - ITO wet etching PY - 2025 AN - OPUS4-63631 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hülagü, Deniz A1 - Ermilova, Elena A1 - Weise, Matthias A1 - de Préville, Sophie A1 - Hoffmann, Johannes A1 - Morán‐Meza, José A1 - Piquemal, François A1 - Hertwig, Andreas T1 - Multimethod Electrical Characterization of Thin Indium Tin Oxide Films: Structuring and Calibration Sample Development for Scanning Probe Microscopy N2 - Indium tin oxide (ITO), a transparent conductive oxide, is widely used in optoelectronic applications due to its electrical conductivity, optical transparency, and chemical stability. This study employs spectroscopic ellipsometry (SE) to analyze ITO layers, enabling nondestructive determination of film thickness, dielectric functions, and bulk conductivity. Electrical properties derived from SE are compared with those obtained using the four‐point probe method (4PM) to improve metrological tools for nanotechnology applications and optimize deposition process monitoring for better control of film properties. This work also investigates the chemical stability of ITO layers under etching conditions and explores the development of new sheet resistance standards for scanning microwave microscopy (SMM). The results show that ITO resistivity, calculated from fitted SE data, increases with oxygen flow rate up to 5 cm3(STP) min−1. Good agreement is observed between sheet resistance values obtained by SE and 4PM up to 3 cm3(STP) min−1. Additionally, the sheet resistance values of a distinct set of microstructured ITO samples with different ITO layer thicknesses are determined by SMM, which are highly consistent with those obtained by the 4PM. KW - Ellipsometry KW - Indium tin oxide (ITO) KW - Scanning microwave microscopy (SMM) KW - Sheet resistance calibration standards KW - ITO wet etching PY - 2025 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-626242 DO - https://doi.org/10.1002/pssa.202400871 SN - 1862-6300 VL - 222 IS - 14 SP - 1 EP - 18 PB - Wiley CY - Hoboken, New Jersey, USA AN - OPUS4-62624 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hülagü, Deniz A1 - Hirahara, Kenta A1 - Fischer, Daniel A1 - Florian, Camilo A1 - Schusterbauer, Robert A1 - Ermilova, Elena A1 - Krüger, Jörg A1 - Unterreiner, Andreas-Neil A1 - Bonse, Jörn A1 - Hertwig, Andreas T1 - Using imaging ellipsometry to understand femtosecond laser materials processing of group IV materials N2 - Laser materials processing is an important tool for creating and shaping new materials. Laser machining, especially with ultrashort pulses offers the modification of surfaces, thin coatings, and bulk materials with an unprecedented precision and control. The most desired feature of pulsed laser processing in the femtosecond range is that the heat-affected zone in the irradiated material will be extremely small. To better understand the mechanisms involved during laser irradiation, it is important to analyse the outcome of light-matter interaction with spectroscopic methods. Ellipsometry, especially spectroscopic imaging ellipsometry (SIE), has become an important tool for this in recent times, as it gives access to local layer thicknesses, materials dielectric functions, and features like changes in surface roughness. This work includes an overview over our recent studies examining near-infrared fs-laser surface processing of different group IV materials. The superficial phase change of silicon from crystalline to amorphous has been investigated in the past as the result of laser processing strongly depends on the crystal orientation. Moreover, SIE is capable of determining the properties of buried a-Si interfaces with micrometer lateral and sub-nanoneter vertical precision. Additionally, the growth of native and laser-induced oxides can be revealed. T2 - ICSE10 - 10th International Conference on Spectroscopic Ellipsometry CY - Boulder, CO, USA DA - 08.06.2025 KW - Laser surface ablation KW - Amorphous Carbon KW - Silicon KW - Correlative Imaging Ellipsometry PY - 2025 AN - OPUS4-63633 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Jensen, S. A. A1 - Rosu, Dana Maria A1 - Hertwig, Andreas A1 - Hansen, P.-E. T1 - Use of Rayleigh-Rice Theory for Analysis of Ellipsometry Data on Rough CIGS Films N2 - Ellipsometry is a useful tool for studying the optical properties of thin films such as photovoltaic devices. We employ Müller matrix ellipsometry to study the thin film photovoltaic material copper indium gallium selenide Cu(In,Ga) Se2 (CIGS), a commercially relevant material with high energy conversion efficiency. Confocal microscopy reveals an rms roughness of 68 nm, which greatly affects the ellipsometry data. Rayleigh-Rice theory is employed to account for the optical properties of the surface roughness in the ellipsometry experiment, and a library search method is used to compare Müller parameters calculated for various CIGS compositions, to the measured data. The Müller parameters calculated with the Rayleigh-Rice model are found to correspond well with the measured data, and a surface roughness of 37nm and a correlation length of 125nm are extracted. KW - Photovoltaics KW - Thin Films KW - Ellipsometry KW - Scattering Theory KW - Optical Wavefield KW - Simulation KW - Müller Polarimetry KW - Multidimensional Spectroscopy PY - 2017 DO - https://doi.org/10.1002/pssc.201700217 SN - 1862-6351 VL - 14 IS - 12 SP - 1700217, 1 EP - 5 PB - WILEY-VCH Verlag GmbH & Co. KGaA CY - Weinheim AN - OPUS4-43390 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Kautek, Wolfgang A1 - Hertwig, Andreas A1 - Martin, Sven A1 - Krüger, Jörg A1 - Lenzner, Matthias A1 - Spielmann, C. A1 - Lenner, M. A1 - Bunte, J. A1 - Puester, T. A1 - Burmester, T. A1 - Fiedler, A. A1 - Heberer, E. A1 - Brose, M. A1 - Stingl, A. A1 - Kiehl, P. A1 - Hönigsmann, H. A1 - Trautinger, F. A1 - Grabner, G. T1 - Safety in Femtosecond Laser Technology - Recent Results of a European Research Project (406) T2 - International Laser Safety Conference 2003 ; ILSC 2003 CY - Jacksonville, FL, USA DA - 2003-03-10 PY - 2003 SN - 0-912035-38-2 SP - 1(?) EP - 10(?) PB - Laser Institute of America CY - Orlando, Fla. AN - OPUS4-2259 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Khropost, Diana A1 - Riethmüller, Franziska A1 - Döhring, Thorsten A1 - Flachs, Dennis A1 - Hülagü, Deniz A1 - Hertwig, Andreas A1 - Cotroneo, Vincenzo A1 - gibertini, eugenio T1 - Polydopamine – a bio-inspired polymer for X-ray mirror coatings and other technical applications N2 - Although the organic molecule dopamine (3,4-dihydroxyphenethylamine) is commonly known as one of the “hormones of happiness”, thin polymer films of polydopamine (PDA) also have interesting technical properties. PDA is a very strong glue that sticks on almost everything, even under water. In nature, PDA is found in the byssal thread cuticles of mussels. When produced by dip-coating, the self-organizing PDA layers grow in a reproducible thickness of single or multiple molecule monolayers of a few nanometres thickness only. Here we present an optimized preparation regime as derived from polymerization analysis through absorption spectroscopy. One application is the use of thin PDA overcoatings to increase the soft X-ray reflectivity of astronomical X-ray mirrors. Furthermore, we give an outlook to other technical applications for this interesting material, presenting this bio-inspired organic polymer as an innovative technical solution for the future, with applications such as PDA-based super-capacitors and its promising role in enhancing separator materials for batteries. T2 - SPIE Optics + Optoelectronics 2025 CY - Prague, Czech Republic DA - 07.04.2025 KW - X-ray mirrors KW - Reflectivity KW - Polydopamine KW - Ellipsometry PY - 2025 DO - https://doi.org/10.1117/12.3056298 VL - 13531 SP - 1 EP - 11 PB - SPIE AN - OPUS4-63630 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -