TY - JOUR A1 - Sadowski, A. A1 - Seidel, M. A1 - Al-Lawati, H. A1 - Azizi, E. A1 - Balscheit, Hagen A1 - Böhm, M. A1 - Chen, Lei A1 - van Dijk, I. A1 - Doerich-Stavridis, C. A1 - Kunle Fajuyitan, O. A1 - Filippidis, A. A1 - Winther Fischer, A. A1 - Fischer, C. A1 - Gerasimidis, S. A1 - Karampour, H. A1 - Kathirkamanathan, L. A1 - Subramanian, S. A1 - Topkaya, Cem A1 - Wagner, H. N. R. A1 - Wang, J. A1 - Wang, J. A1 - Kumar Yadav, K. A1 - Yun, X. A1 - Zhang, P. T1 - 8-MW wind turbine tower computational shell buckling benchmark - Part 1: An international ‘round-robin’ exercise N2 - An assessment of the elastic-plastic buckling limit state for multi-strake wind turbine support towers poses a particular challenge for the modern finite element analyst, who must competently navigate numerous modelling choices related to the tug-of-war between meshing and computational cost, the use of solvers that are robust to highly nonlinear behaviour, the potential for multiple near-simultaneously critical failure locations, the complex issue of imperfection sensitivity and finally the interpretation of the data into a safe and economic design. This paper reports on an international ‘round-robin’ exercise conducted in 2022 aiming to take stock of the computational shell buckling expertise around the world which attracted 29 submissions. Participants were asked to perform analyses of increasing complexity on a standardised benchmark of an 8-MW multi-strake steel wind turbine support tower segment, from a linear elastic stress analysis to a linear bifurcation analysis to a geometrically and materially nonlinear buckling analysis with imperfections. The results are a showcase of the significant shell buckling expertise now available in both industry and academia. This paper is the first of a pair. The second paper presents a detailed reference solution to the benchmark, including an illustration of the Eurocode-compliant calibration of two important imperfection forms. KW - Wind turbine tower KW - Computational KW - Shell buckling KW - Benchmark PY - 2023 DO - https://doi.org/10.1016/j.engfailanal.2023.107124 SN - 1350-6307 VL - 148 SP - 1 EP - 23 PB - Elsevier Science CY - Oxford AN - OPUS4-57019 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Abou-Ras, D. A1 - Caballero, R. A1 - Fischer, C.-H. A1 - Kaufmann, C.A. A1 - Lauermann, I. A1 - Mainz, R. A1 - Mönig, H. A1 - Schöpke, A. A1 - Stephan, C. A1 - Streeck, C. A1 - Schorr, S. A1 - Eicke, A. A1 - Döbeli, M. A1 - Gade, B. A1 - Hinrichs, J. A1 - Nunney, T. A1 - Dijkstra, H. A1 - Hoffmann, V. A1 - Klemm, D. A1 - Efimova, V. A1 - Bergmaier, A. A1 - Dollinger, G. A1 - Wirth, Thomas A1 - Unger, Wolfgang A1 - Rockett, A.A. A1 - Perez-Rodriguez, A. A1 - Alvarez-Garcia, J. A1 - Izquierdo-Roca, V. A1 - Schmid, T. A1 - Choi, P.-P. A1 - Müller, M. A1 - Bertram, F. A1 - Christen, J. A1 - Khatri, H. A1 - Collins, R.W. A1 - Marsillac, S. A1 - Kötschau, I. T1 - Comprehensive comparison of various techniques for the analysis of elemental distributions in thin films N2 - The present work shows results on elemental distribution analyses in Cu(In,Ga)Se2 thin films for solar cells performed by use of wavelength-dispersive and energy-dispersive X-ray spectrometry (EDX) in a scanning electron microscope, EDX in a transmission electron microscope, X-ray photoelectron, angle-dependent soft X-ray emission, secondary ion-mass (SIMS), time-of-flight SIMS, sputtered neutral mass, glow-discharge optical emission and glow-discharge mass, Auger electron, and Rutherford backscattering spectrometry, by use of scanning Auger electron microscopy, Raman depth profiling, and Raman mapping, as well as by use of elastic recoil detection analysis, grazing-incidence X-ray and electron backscatter diffraction, and grazing-incidence X-ray fluorescence analysis. The Cu(In,Ga)Se2 thin films used for the present comparison were produced during the same identical deposition run and exhibit thicknesses of about 2 µm. The analysis techniques were compared with respect to their spatial and depth resolutions, measuring speeds, availabilities, and detection limits. KW - Elemental distributions KW - Comparison KW - Depth profiling KW - Chemical mapping KW - Thin films KW - Solar cells KW - Chalcopyrite-type KW - Cu(In,Ga)Se2 PY - 2011 DO - https://doi.org/10.1017/S1431927611000523 SN - 1431-9276 SN - 1435-8115 VL - 17 IS - 5 SP - 728 EP - 751 PB - Cambridge University Press CY - New York, NY AN - OPUS4-24506 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Alder-Rangel, A. A1 - Idnurm, A. A1 - Brand, A. A1 - Brown, A. A1 - Gorbushina, Anna A1 - Kelliher, C. A1 - Campos, C. A1 - Levin, D. A1 - Bell-Pedersen, D. A1 - Dadachova, E. A1 - Bauer, F. A1 - Gadd, G. A1 - Braus, G. A1 - Braga, G. A1 - Brancini, G. A1 - Walker, G. A1 - Druzhinina, I. A1 - Pocsi, I. A1 - Dijksterhuis, J. A1 - Aguirre, J. A1 - Hallsworth, J. A1 - Schumacher, Julia A1 - Ho Wong, K. A1 - Selbmann, L. A1 - Corrochano, L. A1 - Kupiec, M. A1 - Momany, M. A1 - Molin, M. A1 - Requena, N. A1 - Yarden, O. A1 - Cordero, R. A1 - Fischer, R. A1 - Pascon, R. A1 - Mancinelli, R. A1 - Emri, T. A1 - Basso, T. A1 - Rangel, D. T1 - The Third International Symposium on Fungal Stress - ISFUS N2 - Stress is a normal part of life for fungi, which can survive in environments considered inhospitable or hostile for other organisms. Due to the ability of fungi to respond to, survive in, and transform the environment, even under severe stresses, many researchers are exploring the mechanisms that enable fungi to adapt to stress. The International Symposium on Fungal Stress (ISFUS) brings together leading scientists from around the world who research fungal stress. This article discusses presentations given at the third ISFUS, held in Sao Jose dos Campos, Sao Paulo, Brazil in 2019, thereby summarizing the state-of-the-art knowledge on fungal stress, a field that includes microbiology, agriculture, ecology, biotechnology, medicine, and astrobiology. T2 - International Symposium on Fungal Stress (ISFUS) CY - Sao Jose dos Campos, Brazil DA - 20.05.2019 KW - Agricultural mycology KW - Fungal stress mechanisms and responses KW - Industrial mycology KW - Medical mycology PY - 2020 DO - https://doi.org/10.1016/j.funbio.2020.02.007 VL - 124 IS - 5 SP - 235 EP - 252 PB - Elsevier Ltd. AN - OPUS4-50953 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Allsop, N. A. A1 - Schönmann, A. A1 - Belaidi, A. A1 - Muffler, H.-J. A1 - Mertesacker, B. A1 - Bohne, W. A1 - Strub, Erik A1 - Röhrich, J. A1 - Lux-Steiner, M. C. A1 - Fischer, C.-H. T1 - Indium sulfide thin films deposited by the spray ion layer gas reaction technique N2 - The Spray Ion Layer Gas Reaction (Spray-ILGAR) technique is a new variation on the ILGAR technique used to prepare chalcogenide thin films. High quality indium sulfide thin films were produced by Spray-ILGAR with an indirect bandgap of 2.2 eV and a high suitability for use as buffer layers in chalcopyrite solar cells. The process involves the cyclical spray deposition of an indium containing precursor layer followed by its conversion to sulfide using hydrogen sulfide gas. Analysis of the deposition reveals that the indium chloride based precursor is transported via the vapour phase from the spray droplets to the substrate surface. KW - Spray deposition KW - Indium sulfide KW - Ion layer gas reaction KW - ILGAR KW - X-ray diffraction KW - X-ray fluorescence KW - Deposition process PY - 2006 DO - https://doi.org/10.1016/j.tsf.2006.01.019 SN - 0040-6090 VL - 513 IS - 1-2 SP - 52 EP - 56 PB - Elsevier CY - Amsterdam AN - OPUS4-14267 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Pyzalla, A. A1 - Pinto, H. A1 - Wild, E. A1 - Poeste, T. A1 - Bohne, C. A1 - Reimers, W. A1 - Aßmus, Kristin A1 - Hübner, Wolfgang A1 - Fischer, A. ED - Bartz, Wilfried J. T1 - Mechanical Stress in Tribo-Layers T2 - 14th International Colloquium Tribology "Tribology and Lubrication Engineering" CY - Stuttgart, Deutschland DA - 2004-01-13 PY - 2004 SN - 3-924813-54-X VL - I SP - 85 EP - 89 PB - Techn. Akad. Esslingen CY - Ostfildern AN - OPUS4-3144 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Fischer, Tobias A1 - Dietrich, Paul A1 - Streeck, C. A1 - Ray, S. A1 - Nutsch, A. A1 - Shard, A. A1 - Beckhoff, B. A1 - Unger, Wolfgang A1 - Rurack, Knut T1 - Quantification of variable functional-group densities of mixed-silane monolayers on surfaces via a dual-mode fluorescence and XPS label N2 - The preparation of aminated monolayers with a controlled density of functional groups on silica surfaces through a simple vapor deposition process employing different ratios of two suitable monoalkoxysilanes, (3-aminopropyl)diisopropylethoxysilane (APDIPES) and (3-cyanopropyl)dimethylmethoxysilane (CPDMMS), and advances in the reliable quantification of such tailored surfaces are presented here. The one-step codeposition process was carried out with binary silane mixtures, rendering possible the control over a wide range of densities in a single step. In particular, APDIPES constitutes the functional silane and CPDMMS the inert component. The procedure requires only small amounts of silanes, several ratios can be produced in a single batch, the deposition can be carried out within a few hours and a dry atmosphere can easily be employed, limiting self-condensation of the silanes. Characterization of the ratio of silanes actually bound to the surface can then be performed in a facile manner through contact angle measurements using the Cassie equation. The reliable estimation of the number of surface functional groups was approached with a dual-mode BODIPY-type fluorescence label, which allows quantification by fluorescence and XPS on one and the same sample. We found that fluorescence and XPS signals correlate over at least 1 order of magnitude, allowing for a direct linking of quantitative fluorescence analysis to XPS quantification. Employment of synchrotron-based methods (XPS; reference-free total reflection X-ray fluorescence, TXRF) made the traceable quantification of surface functional groups possible, providing an absolute reference for quantitative fluorescence measurements through a traceable measurement chain. KW - Oberflächenanalytik KW - Fluoreszenz KW - XPS KW - TXRF KW - Funktionelle Gruppen PY - 2015 DO - https://doi.org/10.1021/ac503850f SN - 0003-2700 SN - 1520-6882 VL - 87 IS - 5 SP - 2685 EP - 2692 PB - American Chemical Society CY - Washington, DC AN - OPUS4-34470 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Becker, S. A1 - Beckmann, Jörg A1 - Braun, M.-T. A1 - Cojocari, O. A1 - Feige, V. A1 - Fischer, B. A1 - Friederich, F. A1 - Globisch, B. A1 - Hechtfischer, G. A1 - Hens, K. A1 - Hübers, H.-W. A1 - Jelonnek, J. A1 - Jonuscheit, J. A1 - Keil, A. A1 - Kleine-Ostmann, T. A1 - Marquardt, E. A1 - Mayr, M. A1 - Nickel, H.-U. A1 - Nüßler, D. A1 - Peichl, M. A1 - Peters, O. A1 - Schür, J. A1 - Sprenger, T. A1 - Steiger, A. A1 - van Frank, S. A1 - Vieweg, N. A1 - Wilk, R. ED - Jonuscheit, J. ED - Marquardt, E. T1 - Terahertzsysteme und Anwendungsfelder N2 - Der Frequenzbereich der Terahertzwellen liegt im elektromagnetischen Spektrum zwischen den Mikrowellen und dem infraroten Licht – also etwa im Bereich von 0,1 bis 10 Terahertz (THz). Der VDI-Statusreport „Terahertzsysteme und Anwendungen“ stellt die unterschiedlichen Konzepte für Terahertzsysteme vor und zeigt Anwendungsbeispiele, bei denen die Terahertztechnik erfolgreich eingesetzt wird. Umfangreiche Literaturangaben ermöglichen eine intensivere Beschäftigung mit allen Themen des VDI-Statusreports. KW - Terahertzsysteme PY - 2020 UR - https://www.vdi.de/ueber-uns/presse/publikationen/details/terahertzsysteme-und-anwendungsfelder SP - 1 EP - 44 PB - Verein Deutscher Ingenieure (VDI) CY - Düsseldorf AN - OPUS4-50556 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Beck, M. A1 - Becker, S. A1 - Beckmann, Jörg A1 - Cojocari, O. A1 - Feige, V. A1 - Fischer, B. A1 - Friederich, F. A1 - Globisch, B. A1 - Haupt, H. A1 - Hechtfischer, G. A1 - Hens, K. A1 - Hübers, H.-W. A1 - Jelonnek, J. A1 - Jonuscheit, J. A1 - Keil, A. A1 - Kleine-Ostmann, T. A1 - Nickel, H.-U. A1 - Peichl, M. A1 - Peters, O. A1 - Sprenger, T. A1 - Steiger, A. A1 - van Frank, S. A1 - Vieweg, N. A1 - Werner, M. A1 - Wilk, R. T1 - Terahertzsysteme - Anwendungsfelder und Systeme N2 - Die nicht ionisierende elektromagnetische Strahlung im Bereich von Terahertz-Frequenzen ermöglicht berührungslose und zerstörungsfreie Mess- und Prüftechnik in zahlreichen Bereichen. Nach ersten Anwendungen in der Astronomie und der Atmosphärenforschung wurden in letzter Zeit Anwendungsfelder in der Sicherheitstechnik, der Medizintechnik, der Nachrichtentechnik und der zerstörungsfreien Prozess- und Qualitätskontrolle erschlossen. Dielektrische Materialien wie Kunststoffe und Keramiken können von Terahertz-Wellen durchdrungen werden. Das ermöglicht Untersuchungen des Objektinneren ohne spezielle Schutzmaßnahmen, wie sie z.B. beim Röntgen notwendig sind. Die Richtlinie erleichtert die Verständigung zwischen Nutzern, Herstellern und dem Vertrieb von Terahertz-Systemen. In der Richtlinie werden bekannte Einsatzgebiete sowie die eingesetzten Verfahren und Funktionsprinzipien aufgeführt, um den Leser bei der Auswahlentscheidung zu unterstützen. Nach einer kurzen Einführung in die physikalischen Grundlagen und Hinweisen zur elektromagnetischen Verträglichkeit, zum Strahlenschutz und zur regulierten Frequenzvergabe werden die verschiedenen Geräteklassen von Terahertz-Systemen ausführlich vorgestellt. Die Richtlinie gibt Hinweise zur messtechnischen Charakterisierung von Terahertz-Wellen. Einsatzgebiete von Terahertz-Systemen, wie die zerstörungsfreie Prüfung, die Dicken- und Abstandsmessung, die Tomografie und die chemische Analytik, werden mit ihren spezifischen Eigenschaften im Detail beschrieben. Umfangreiche Literaturverweise vereinfachen eine vertiefte Beschäftigung mit den Themen der Richtlinie. Eine tabellarische Übersicht mit einer Zusammenfassung, welche Terahertz-Systeme für welche Anwendungsfelder eingesetzt werden können, vervollständigt die Richtlinie. KW - Terahertzsysteme KW - THz-Wellen PY - 2018 UR - https://www.vdi.de/5590 VL - VDI/VDE 5590 Blatt 2 SP - 1 EP - 27 PB - VDI-Verlag CY - Düsseldorf ET - Entwurf - November 2018 AN - OPUS4-46727 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Becker, S. A1 - Beckmann, Jörg A1 - Cojocari, O. A1 - Feige, V. A1 - Fischer, B. A1 - Friederich, F. A1 - Globisch, B. A1 - Hechtfischer, G. A1 - Hens, K. A1 - Hübers, H.-W. A1 - Jelonnek, J. A1 - Jonuscheit, J. A1 - Keil, A. A1 - Kleine-Ostmann, T. A1 - Mayr, M. A1 - Nüßler, D. A1 - Peichl, M. A1 - Peters, O. A1 - Schür, J. A1 - Sprenger, T. A1 - Steiger, A. A1 - van Frank, S. A1 - Vieweg, N. A1 - Wilk, R. T1 - Terahertzsysteme - Zeitbereichsspektrometer (TDS-Systeme) N2 - Diese Richtlinie definiert Kenngrößen und Messverfahren, um Terahertzsysteme für die Zeitbereichsspektroskopie (TDS)zu spezifizieren. So können Hersteller ihre Systeme übereinstimmend beschreiben und Anwender einfach Systeme vergleichen. Systeme für die Terahertz-Zeitbereichsspektroskopie sind aktive Systeme und nutzen verschiedene Techniken sowohl zur Erzeugung als auch zur zeitaufgelösten Messung von breitbandigen Terahertzimpulsen. Die dazugehörigen Terahertzspektren und -Phasen werden nach einer zeitlichen Abtastung über eine Fourier-Transformation berechnet. In dieser Richtlinie wird ein Überblick über die Funktionsweisen von Zeitbereichsspektrometern gegeben, die eingesetzten Messverfahren näher erläutert sowie die benötigten Begriffe und Kenngrößen definiert. Die Richtlinie konzentriert sich dabei auf Systeme, die auf sogenannten Abtastmessverfahren (Sampling-Messverfahren) basieren. KW - TDS-Systeme PY - 2020 UR - https://www.vdi.de/5590 VL - VDI/VDE 5590 Blatt 2 SP - 1 EP - 22 PB - VDI-Verlag CY - Düsseldorf ET - Entwurf - Oktober 2020 AN - OPUS4-51947 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Pinto, H. A1 - Pyzalla, A.R. A1 - Büscher, R. A1 - Fischer, A. A1 - Aßmus, Kristin A1 - Hübner, Wolfgang T1 - The effect of hydrogen on the deterioration of austenitic steels during wear at cryogenic temperature N2 - Hydrogen represents an important alternative to fossil fuels. Hydrogen storage is possible as a gas, at room temperature (RT) at about 20 MPa pressure, and in a liquefied form, at cryogenic temperatures of about 20 K. The latter form is particularly attractive due to the possibility of stocking a large quantity of hydrogen within a small volume. In moving parts (e.g. of transport vehicles) cryogenic temperature and the presence of hydrogen strongly enhance wear processes and subsequently component failure. The present work deals with the deformation behaviour and the microstructural deterioration of austenitic CrNi- and CrMn high nitrogen-steels during friction in liquid hydrogen at 20 K. The modified microstructure within the wear scar is studied by scanning electron microscopy and X-ray diffraction methods. Diffraction studies of wear scars reveal the importance of twinning during deformation at 20 K. This increase of twinning can be attributed to a hydrogen-induced reduction of stacking fault energy (SFE) in the austenitic steels. Interactions between twin boundaries and planar dislocation structures along with locally increased stresses led to the formation of extensive crack networks. The amount of hydrogen-induced surface cracks depends on the alloy composition and is not necessarily correlated to the wear resistance of the austenitic steels. KW - Austenitic steel KW - Stacking fault energy KW - Hydrogen KW - Wear KW - Cryotechnology PY - 2005 DO - https://doi.org/10.1016/j.wear.2005.02.057 SN - 0043-1648 VL - 259 IS - 1-6 SP - 424 EP - 431 PB - Elsevier CY - Amsterdam AN - OPUS4-7692 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -