TY - JOUR A1 - Allsop, N. A. A1 - Schönmann, A. A1 - Belaidi, A. A1 - Muffler, H.-J. A1 - Mertesacker, B. A1 - Bohne, W. A1 - Strub, Erik A1 - Röhrich, J. A1 - Lux-Steiner, M. C. A1 - Fischer, C.-H. T1 - Indium sulfide thin films deposited by the spray ion layer gas reaction technique N2 - The Spray Ion Layer Gas Reaction (Spray-ILGAR) technique is a new variation on the ILGAR technique used to prepare chalcogenide thin films. High quality indium sulfide thin films were produced by Spray-ILGAR with an indirect bandgap of 2.2 eV and a high suitability for use as buffer layers in chalcopyrite solar cells. The process involves the cyclical spray deposition of an indium containing precursor layer followed by its conversion to sulfide using hydrogen sulfide gas. Analysis of the deposition reveals that the indium chloride based precursor is transported via the vapour phase from the spray droplets to the substrate surface. KW - Spray deposition KW - Indium sulfide KW - Ion layer gas reaction KW - ILGAR KW - X-ray diffraction KW - X-ray fluorescence KW - Deposition process PY - 2006 DO - https://doi.org/10.1016/j.tsf.2006.01.019 SN - 0040-6090 VL - 513 IS - 1-2 SP - 52 EP - 56 PB - Elsevier CY - Amsterdam AN - OPUS4-14267 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Gavrilov, S. A1 - Oja, I. A1 - Lim, B. A1 - Belaidi, A. A1 - Bohne, W. A1 - Strub, Erik A1 - Röhrich, J. A1 - Lux-Steiner, M.C. A1 - dittrich, T. T1 - Charge selective contact on ultra-thin In(OH)xSy/Pb(OH)xSy heterostructure prepared by SILAR N2 - Ultra-thin In(OH)x Sy/Pb(OH)x Sy heterostructures were formed by the wet chemical SILAR (successive ion layer adsorption and reaction) technique. ERDA (elastic recoil detection analysis) was used for stoichiometry analysis. The heterocontacts were conditioned by joint annealing of the two layers at different low temperatures in air. The charge selectivity was demonstrated with various small area solar cell structures. The results are discussed on the base of formation of bonds between sulphide clusters and passivation of defects with hydrogen containing species in hydroxy-sulphides. PY - 2006 DO - https://doi.org/10.1002/pssa.200521468 SN - 1862-6300 SN - 0031-8965 VL - 203 IS - 5 SP - 1024 EP - 1029 PB - Wiley-VCH CY - Berlin AN - OPUS4-14217 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -