TY - JOUR A1 - Daneshnia, S. A1 - Adeli, M. A1 - Yari, A. A1 - Shams, A. A1 - Donskyi, Ievgen A1 - Unger, Wolfgang T1 - Low temperature functionalization of two-dimensional boron nitride for electrochemical sensing N2 - Two-dimensional hexagonal boron nitride(h-BN)as an emerging nanomaterial exhibits uniquephysicochemical properties, making it suitable candidate for a wide spectrum of applications.However, due to its poor functionality, the processability of this nanomaterial is low. In this work, wereport on a straightforward and scalable approach for the functionalization of h-BN by nitrene[2+1]cycloaddition at room temperature. The triazine-functionalized h-BN(Trz-BNs)showed ahigh reactivity toward nucleophiles, through which post-modifications are performable. The post-modification of Trz-BNs by L-cysteine was studied using cyclic voltammetry and differential pulsevoltammetry. Taking advantage of the scalable and straightforward functionalization as well as abilityof triazine functional groups for the controlled post-modifications, Trz-BNs is a promisingnanoplatform for a wide range of future applications. KW - Two-dimensional hexagonal boron nitride(h-BN) KW - Nitrene[2+1]cycloaddition KW - Post-modification by L-cysteine KW - Electrochemical sensing KW - XPS PY - 2019 U6 - https://doi.org/10.1088/2053-1591/ab317b SN - 2053-1591 VL - 6 IS - 9 SP - 095076, 1 EP - 11 PB - IOP Publishing Ltd AN - OPUS4-48635 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -