TY - JOUR A1 - Ressel, P. A1 - Österle, Werner A1 - Urban, Ingrid A1 - Dörfel, Ilona A1 - Klein, A. A1 - Vogel, K. A1 - Kräutle, H. T1 - Transmission electron microscopy study of rapid thermally annealed Pd/Ge contacts on IN0.53Ga0.47As PY - 1996 SN - 0021-8979 SN - 1089-7550 VL - 88 SP - 3910 EP - 3914 PB - American Institute of Physics CY - Melville, NY AN - OPUS4-2514 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Ressel, P. A1 - Österle, Werner A1 - Urban, Ingrid A1 - Klein, A. A1 - Vogel, K. A1 - Kräutle, H. T1 - Transmission electron microscopy study of rapid thermally annealed Pd/Ge contacts on In0.53Ga0.47As N2 - Phase formation in rapid thermally annealed Pd/Ge contacts on In0.53Ga0.47As has been investigated by means of cross-sectional transmission electron microscopy, convergent-beam electron diffraction, and energy-dispersive x-ray analysis. Solid-phase regrowth is observed to occur similarly as in Pd/Ge contacts on GaAs or InP. The reaction starts at low temperatures with the formation of an amorphous Pd–In–Ga–As layer, which crystallizes at elevated temperatures yielding hexagonal Pd4In0.53Ga0.47As being first described in this work. At temperatures .250 °C, this phase decomposes due to epitaxial solid-phase regrowth of In0.53Ga0.47As and formation of Pd–Ge phases. The stable composition is reached at temperatures .350 °C with excess Ge diffused through top Pd–Ge to the contact interface and growing epitaxially on the semiconductor. KW - Semiconductor KW - Thin film contact layer KW - Electron microscopy KW - Intermetallic phases PY - 1996 U6 - https://doi.org/10.1063/1.363348 SN - 0021-8979 VL - 80 IS - 7 SP - 3910 EP - 3914 AN - OPUS4-38537 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -