TY - JOUR A1 - Ressel, P. A1 - Österle, Werner A1 - Urban, Ingrid A1 - Klein, A. A1 - Vogel, K. A1 - Kräutle, H. T1 - Transmission electron microscopy study of rapid thermally annealed Pd/Ge contacts on In0.53Ga0.47As JF - Journal of Applied Physics N2 - Phase formation in rapid thermally annealed Pd/Ge contacts on In0.53Ga0.47As has been investigated by means of cross-sectional transmission electron microscopy, convergent-beam electron diffraction, and energy-dispersive x-ray analysis. Solid-phase regrowth is observed to occur similarly as in Pd/Ge contacts on GaAs or InP. The reaction starts at low temperatures with the formation of an amorphous Pd–In–Ga–As layer, which crystallizes at elevated temperatures yielding hexagonal Pd4In0.53Ga0.47As being first described in this work. At temperatures .250 °C, this phase decomposes due to epitaxial solid-phase regrowth of In0.53Ga0.47As and formation of Pd–Ge phases. The stable composition is reached at temperatures .350 °C with excess Ge diffused through top Pd–Ge to the contact interface and growing epitaxially on the semiconductor. KW - Semiconductor KW - Thin film contact layer KW - Electron microscopy KW - Intermetallic phases PY - 1996 DO - https://doi.org/10.1063/1.363348 SN - 0021-8979 VL - 80 IS - 7 SP - 3910 EP - 3914 AN - OPUS4-38537 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Ressel, P. A1 - Österle, Werner A1 - Urban, Ingrid A1 - Dörfel, Ilona A1 - Klein, A. A1 - Vogel, K. A1 - Kräutle, H. T1 - Transmission electron microscopy study of rapid thermally annealed Pd/Ge contacts on IN0.53Ga0.47As JF - Journal of applied physics PY - 1996 SN - 0021-8979 SN - 1089-7550 VL - 88 SP - 3910 EP - 3914 PB - American Institute of Physics CY - Melville, NY AN - OPUS4-2514 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Kuhmann, J. F. A1 - Chiang, C. H. A1 - Harde, P. A1 - Reier, F. A1 - Österle, Werner A1 - Urban, Ingrid A1 - Klein, A. T1 - Pt thin-film metallization for FC-bonding using SnPb60/40 solder bump metallurgy JF - Materials Science and Engineering N2 - Platinum does not form any adherent oxides and can be easily wetted by tin-based solders. Platinum is also an available metallization in semiconductor laboratories. Therefore we investigated the diffusion of platinum thin-film metallizations into eutectic tin–lead solder by using a high-resolution secondary ion mass spectroscopy (SIMS) profiling from the back side. It is shown that an intermetallic phase (PtSn4) is formed during soldering, which controls the consumption of platinum during soldering and in operation. The consumption of platinum follows the well-known parabolic diffusion law. The activation energy of this process is 0.63 eV. Even at extended heating cycles of 2 min at 250°C, 190 nm from the original 300 nm of the platinum film remain undissolved. This high stability makes platinum a very attractive thin-film metallization for flip-chip (FC) bonding of new microsystems. KW - Pt thin film metallization KW - FC solder bonding KW - Diffusion KW - SIMS PY - 1998 SN - 0921-5093 VL - A242 SP - 22 EP - 25 PB - Elsevier AN - OPUS4-38540 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Klein, A. A1 - Urban, Ingrid A1 - Ressel, P. A1 - Nebauer, E. A1 - Merkel, U. A1 - Österle, Werner T1 - Preparation, transmission electron microscopy, and microanalytical investigations of metal-III-V semiconductor interfaces JF - Materials characterization PY - 1996 SN - 1044-5803 SN - 1873-4189 VL - 37 SP - 143 EP - 151 PB - Elsevier CY - New York, NY AN - OPUS4-2528 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -