TY - JOUR A1 - Alvisi, M. A1 - Blome, M. A1 - Griepentrog, Michael A1 - Hodoroaba, Vasile-Dan A1 - Karduck, P. A1 - Mostert, M. A1 - Nacucchi, M. A1 - Procop, Mathias A1 - Rohde, M. A1 - Scholze, F. A1 - Statham, P. A1 - Terborg, R. A1 - Thiot, J.-F. T1 - The Determination of the Efficiency of Energy Dispersive X-Ray Spectrometers by a New Reference Material N2 - A calibration procedure for the detection efficiency of energy dispersive X-ray spectrometers (EDS) used in combination with scanning electron microscopy (SEM) for standardless electron probe microanalysis (EPMA) is presented. The procedure is based on the comparison of X-ray spectra from a reference material (RM) measured with the EDS to be calibrated and a reference EDS. The RM is certified by the line intensities in the X-ray spectrum recorded with a reference EDS and by its composition. The calibration of the reference EDS is performed using synchrotron radiation at the radiometry laboratory of the Physikalisch-Technische Bundesanstalt. Measurement of RM spectra and comparison of the specified line intensities enables a rapid efficiency calibration on most SEMs. The article reports on studies to prepare such a RM and on EDS calibration and proposes a methodology that could be implemented in current spectrometer software to enable the calibration with a minimum of operator assistance. KW - Energy dispersive X-ray spectrometry KW - Standardless analysis KW - X-ray detectors KW - Detection efficiency KW - Spectrometer calibration PY - 2006 U6 - https://doi.org/10.1017/S1431927606060557 SN - 1431-9276 SN - 1435-8115 VL - 12 IS - 5 SP - 406 EP - 415 PB - Cambridge University Press CY - New York, NY AN - OPUS4-13135 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hodoroaba, Vasile-Dan A1 - Salge, T. A1 - Terborg, R. A1 - Rackwitz, Vanessa T1 - Advanced elemental analysis with ED-EPMA, WD-EPMA and mu-XRF at a SEM N2 - It is a latent wish of any SEM/EDS (scanning electron microscope with an energy dispersive spectrometer) analyst to “see more” of the analyzed specimen, i.e. to improve the existing analytical figures of merit. One key issue are the relatively poor limits of detection (not below 0.1 mass-%) provided by energy dispersive X-ray spectrometry (EDX) with the conventional electron excitation (ED-EPMA). This is a consequence of relatively low peak-to-background ratios and reduced energy resolution when compared to wavelength dispersive spectrometry (WD-EPMA). Recent technological developments make possible to equip the SEM with a wavelength dispersive spectrometer (WDS), so that significantly better energy resolution can be attained. Also a relative new product that can be easily attached to a SEM/EDS system is a micro-focus X-ray source. Hence, it is possible to perform (micro-focus) X-ray fluorescence spectrometry (μ-XRF) and take advantage of the enhanced peak-to-background ratios (well suited for trace analysis). However, there are also some disadvantages: an increased measurement time and excitation with a high current in the 10s of nA range are usually required for WDS. μ-XRF provides more bulk information and poor limits of detection for light elements. By combining the advantages of these analytical techniques “seeing more” becomes possible. KW - ED-EPMA KW - WD-EPMA KW - (mu-)XRF KW - EDX PY - 2011 U6 - https://doi.org/10.1017/S1431927611003874 SN - 1431-9276 SN - 1435-8115 VL - 17 IS - Suppl. 2 SP - 600 EP - 601 PB - Cambridge University Press CY - New York, NY AN - OPUS4-26751 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Terborg, R. A1 - Hodoroaba, Vasile-Dan A1 - Kim, K. J. T1 - Determination of Thin Film Thickness and Composition using Energy Dispersive EPMA N2 - Electron Probe Microanalysis (EPMA) provides a non-destructive approach in the dedicated thin film analysis mode with the commercial StrataGem software. Recently, the open-source programme BadgerFilm by Moy and Fournelle became available. Similarly to StrataGem, it is based on the algorithm of Pouchou and Pichoir and needs intensity ratios of the unknown sample and standards (k-values). We have evaluated the k-values measured for the FeNi and SiGe film systems using the BadgerFilm software package and compared the thickness and composition with the results obtained with the established StrataGem software and other reference methods. The thicknesses of the SiGe films obtained by the BadgerFilm software agree within 20% with the StrataGem and TEM results; the elemental compositions BadgerFilm-StrataGEM agree within 2% with one exception (9%). T2 - Microscopy and Microanalysis 2022 CY - Portland, OR, USA DA - 31.07.2022 KW - Thin films KW - Thickness KW - Elemental composition KW - FeNi KW - SiGe KW - BadgerFilm KW - Electron Probe Microanalysis (EPMA) PY - 2022 AN - OPUS4-55522 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Procop, Mathias A1 - Terborg, R. T1 - Measurement and calculation of x-ray production efficiencies for copper, zirconium, and tungsten N2 - Electron probe microanalysis (EPMA) is based on physical relations between measured X-ray intensities of characteristic lines and their Xray production efficiency, which depends on the specimen composition. The quality of the analysis results relies on how realistically the physical relations describe the generation and emission of X-rays. Special experiments are necessary to measure X-ray production efficiencies. A challenge in these experiments is the determination of the detection efficiency of the spectrometer as a function of the photon energy. An energy-dispersive spectrometer was used in this work, for which the efficiency was determined at metrological synchrotron beamlines with an accuracy of ±2%. X-ray production efficiencies for the L series and the Kα series of copper and zirconium and for the M and L series of tungsten were determined at energies up to 30 keV in a scanning electron microscope. These experimental values were compared with calculated X-ray production efficiencies using physical relations and material constants applied in EPMA. The objective of the comparison is the further improvement of EPMA algorithms as well as extending the available database for X-ray production efficiencies. Experimental data for the X-ray production efficiency are also useful for the assessment of spectrum simulation software. KW - Copper KW - Electron probe microanalysis KW - Tungsten KW - X-ray production efficiency KW - Zirconium PY - 2022 U6 - https://doi.org/10.1017/S1431927622012351 VL - 28 IS - 6 SP - 1865 EP - 1877 PB - Oxford University Press CY - Oxford AN - OPUS4-55711 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Terborg, R. A1 - Kim, K. J. A1 - Hodoroaba, Vasile-Dan T1 - Determination of Thin Film Thickness and Composition using Energy Dispersive EPMA N2 - The thickness of thin films can be measured by various methods, e.g., profilometry, ellipsometry, atomic force microscopy (AFM), or X-ray reflectometry. For the additional determination of thin film composition, techniques like X-ray photoelectron spectroscopy (XPS) or mass spectrometry-based techniques can be used. An alternative non-destructive technique is electron probe microanalysis (EPMA). This method assumes a sample of homogenous (bulk) chemical composition, so that it cannot be usually applied to thin film samples. However, in combination with the thin film software StrataGEM, the thickness as well as the composition of such films on a substrate can be determined. This has been demonstrated for FeNi on Si and SiGe on Al2O3 film systems. For both systems five samples with different elemental composition and a reference were produced and characterised by Korean research institute KRISS using inductively coupled plasma mass spectrometry (ICP-MS), Rutherford backscattering (RBS), and transmission electron microscopy (TEM). These samples were used for an international round robin test. In 2021, a new and open-source thin film evaluation programme called BadgerFilm has been released. It can also be used to determine thin film composition and thickness from intensity ratios of the unknown sample and standards (k-ratios). In this contribution, we re-evaluated the data acquired for the FeNi and SiGe systems using the BadgerFilm software package and compared the resulting composition and thickness with the results of the established StrataGEM software and other reference methods. With the current evaluation, the BadgerFilm software shows good agreement with the composition and thickness calculated by StrataGEM and as the reference values provided by the KRISS. KW - Thin films KW - Elemental composition KW - Film thickness KW - EPMA (Electron Probe Microanalysis) PY - 2022 U6 - https://doi.org/10.1017/S143192762200318X VL - 28 IS - Suppl. 1 SP - 672 EP - 673 PB - Cambridge University Press AN - OPUS4-55437 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Terborg, R. A1 - Hodoroaba, Vasile-Dan A1 - Falke, M. A1 - Käppel, A. T1 - On the characterization of the geometrical collection efficiency of modern EDS systems N2 - To compare the performance of different energy dispersive X-ray spectrometers (EDS), it is important to define characteristic spectrometer parameters. The ISO 15632 standard defines parameters like energy resolution as FWHM for the Kα lines of carbon, fluorine and manganese. The quantum efficiency, which is the ratio of the detected photons divided by the number of incoming photons for different energies, is another significant spectrometer property. It is important for the light element and low energy line detection sensitivity as well as for higher photon energies above 10 keV. A striking EDS feature, provided and marketed by many manufactures, is the active area of the detector, although actually, the solid angle available for photon collection is the more relevant geometrical parameter. It is defined as: Ω = A /r2 with A being the active area of a spherical detector and r being the distance between the point of the radiation origin and the center of the surface of the active detector chip. A more accurate calculation should be used for large flat detector areas. One should note that the solid angle Ω is not an intrinsic spectrometer property. It can only be defined for a specific detector in combination with a specific system (e.g. SEM, EPMA or TEM). Thus, the minimal possible distance r is determined by the particular geometry e.g. a possible interference with the pole piece or other detectors/components in the chamber of a microscope. New EDS technologies use e.g. integrated SDD chips or inclined chips in thinner detector fingers which can be placed closer to the sample with the final result of larger real solid angles. Therefore, the knowledge of the real solid angle is one of the crucial parameters of an EDS microscope combination. A straightforward way to estimate the real solid angle is to simply determine A and r. If respective data are not provided by the manufacturer, this approach can be difficult. KW - EDS KW - EDX KW - Geometrical collection efficiency KW - Solid angle PY - 2014 U6 - https://doi.org/10.1017/S1431927614007454 SN - 1431-9276 SN - 1435-8115 VL - 20 IS - Suppl. S 3 SP - 1144 EP - 1145 PB - Cambridge University Press CY - New York, NY AN - OPUS4-31388 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hodoroaba, Vasile-Dan A1 - Wirth, Thomas A1 - Terborg, R. A1 - Kim, K.J. A1 - Unger, Wolfgang T1 - Measurement of atomic fractions in Cu(In,Ga)Se2 films by Auger Electron Spectroscopy (AES) and Energy Dispersive Electron Probe Microanalysis (ED-EPMA) N2 - A pilot study (PS) has been performed under the Consultative Committee for Amount of Substance (CCQM) / Surface Analysis Working Group (SAWG) with the objective to compare the atomic fractions of Cu, In, Ga and Se in CIGS alloy films. Four polycrystalline CIGS films with different atomic fractions were fabricated by variation of the relative atomic fraction of Ga on 100 mm x 100 mm soda-lime glass (SLG) substrates. Similar to real solar cells the atomic fractions of the four elements (Cu, In, Ga, Se) are not homogeneous with depth. For the analysis of the CIGS layers of about 2 μm thickness depth profiling with surface analysis techniques such as XPS, AES and SIMS was recommended. A CIGS alloy reference sample with atomic fractions certified by isotope dilution ICP-MS at KRISS has been also put at disposal by the coordinator of the comparison. The certified values were close to the atomic fractions of the samples to be analyzed. Hence, the atomic fractions of Cu, In, Ga and Se in the CIGS films could be determined by the relative sensitivity factors (RSF) derived from the reference CIGS film. The total ion intensities of the constituent elements were obtained by the total number counting (TNC) method. KW - Interlaboratory comparison KW - Auger Electron Spectroscopy (AES) KW - EDX KW - EPMA KW - CIGS KW - CCQM PY - 2014 U6 - https://doi.org/10.1017/S1431927614003730 SN - 1431-9276 SN - 1435-8115 VL - 20 IS - Suppl. S 3 SP - 402 EP - 403 PB - Cambridge University Press CY - New York, NY AN - OPUS4-31339 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Salge, T. A1 - Terborg, R. A1 - Ball, A. D. A1 - Broad, G.R. A1 - Kearsley, A.T. A1 - Jones, C.G. A1 - Smith, C. A1 - Rades, Steffi A1 - Hodoroaba, Vasile-Dan ED - Hozak, P. T1 - Advanced SEM/EDS analysis using an annular silicon drift detector (SDD): Applications in nano, life, earth and planetary sciences below micrometer scale T2 - IMC 2014 - 18th International microscopy congress CY - Prague, Czech Republic DA - 2014-09-07 PY - 2014 SN - 978-80-260-6720-7 SP - IT-5-P-1842, 1-2 AN - OPUS4-31944 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Terborg, R. A1 - Hodoroaba, Vasile-Dan A1 - Falke, M. A1 - Käppel, A. ED - Hozak, P. T1 - Characterization of EDS systems with respect to the geometrical collection efficiency T2 - IMC 2014 - 18th International microscopy congress CY - Prague, Czech Republic DA - 07.09.2014 KW - EDS KW - EDX KW - Geometrical collection efficiency KW - Solid angle PY - 2014 SN - 978-80-260-6720-7 SP - IT-5-P-1533, 1-2 AN - OPUS4-31945 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hodoroaba, Vasile-Dan A1 - Terborg, R. A1 - Procop, M. T1 - Determination of the effective EDS detector area using experimental and theoretical X-ray emission yields N2 - An energy dispersive X-ray spectrometer operating with a semiconductor detector should be specified in compliance with the ISO standard 15632 [1]. Requirements for specification are: a) a general description of the spectrometer to evaluate its performance, b) the energy resolution with corresponding dead time, c) the P/B ratio in the Fe55 spectrum and, finally, d) the L/K intensity Ratio in a Ni or Cu spectrum to estimate spectrometer efficiency at low energies. Items b) to d) can be easily checked by the user. Related procedures are recommended in the annexes of the standard. KW - EDS KW - X-rays KW - Effective solid angle PY - 2015 U6 - https://doi.org/10.1017/S1431927615008181 SN - 1431-9276 SN - 1435-8115 VL - 21 IS - Suppl. 3 SP - Paper 0739, 1481 EP - 1482 PB - Cambridge University Press CY - New York, NY AN - OPUS4-34342 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Procop, Mathias A1 - Hodoroaba, Vasile-Dan A1 - Terborg, R. A1 - Berger, D. T1 - Determination of the Effective Detector Area of an Energy-Dispersive X-Ray Spectrometer at the Scanning Electron Microscope Using Experimental and Theoretical X-Ray Emission Yields N2 - A method is proposed to determine the effective detector area for energy-dispersive X-ray spectrometers (EDS). Nowadays, detectors are available for a wide range of nominal areas ranging from 10 up to 150mm2. However, it remains in most cases unknown whether this nominal area coincides with the “net active sensor area” that should be given according to the related standard ISO 15632, or with any other area of the detector device. Moreover, the specific geometry of EDS installation may further reduce a given detector area. The proposed method can be applied to most scanning electron microscope/EDS configurations. The basic idea consists in a comparison of the measured count rate with the count rate resulting from known X-ray yields of copper, titanium, or silicon. The method was successfully tested on three detectors with known effective area and applied further to seven spectrometers from different manufacturers. In most cases the method gave an effective area smaller than the area given in the detector description. KW - Energy-dispersive X-ray spectrometer (EDS) KW - EDX KW - Effective area KW - X-ray emission yield KW - Geometrical collection efficiency PY - 2016 UR - https://www.cambridge.org/core/journals/microscopy-and-microanalysis/article/div-classtitledetermination-of-the-effective-detector-area-of-an-energy-dispersive-x-ray-spectrometer-at-the-scanning-electron-microscope-using-experimental-and-theoretical-x-ray-emission-yieldsdiv/E15B2E67C349201CF323E778EB9C6D94 U6 - https://doi.org/10.1017/S1431927616011788 VL - 22 IS - 6 SP - 1360 EP - 1368 PB - Cambridge University Press CY - New York, NY, USA AN - OPUS4-38858 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Terborg, R. A1 - Hodoroaba, Vasile-Dan T1 - Analysis of the elemental composition and thickness of a Fe-Ni film on Si using Bruker ESPRIT and SAMx STRATAGem N2 - Quantitative analysis of a bulk sample requires that the composition of the sample is homogeneous over the analyzed volume. For inhomogenous samples the calculation of the matrix effects is not correct and this can lead to wrong results in the element concentrations. For samples containing a layer structure a different quantitative evaluation has to be applied. This can be provided with the standard-based analysis in ESPRIT in combination with the STRATAGem software. KW - Thin film analysis KW - SEM/EDX KW - EPMA KW - k-values PY - 2018 UR - https://www.bruker.com/products/x-ray-diffraction-and-elemental-analysis/eds-wds-ebsd-sem-micro-xrf-and-sem-micro-ct/quantax-eds-for-sem/applications/layer-analysis.html SP - 1 EP - 4 CY - Berlin AN - OPUS4-44594 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hodoroaba, Vasile-Dan A1 - Terborg, R. A1 - Boehm, S. A1 - Kim, K. J. T1 - Measurement of Elemental Composition of FeNi and SiGe Alloy Thin Films by EMPA and µ-XRF N2 - It was demonstrated in the past that the electron probe microanalysis (EPMA) can be applied to determine accurately both elemental composition and thickness of thin films by using the dedicated software package for thin film analysis Stratagem. A relatively small number of film materials such as pure metallic films of platinum and nickel, binary alloys of Fe-Ni, and Pt-Ni-Co ternary alloy films has been reported in literature as working successfully. Further, the software can be applied ‘inversely’, i.e., by feeding it with the thickness of the film and using the determined mass coating, one can easily calculate the film density, which for porous layers leads us to the true film porosity. The present study repeats measurements on an already tested system of Fe-Ni thin films on silicon and reports for the first-time results of analysis on Si-Ge thin films deposited on a non-conductive aluminium oxide substrate. Standard-based and standardless EPMA (with EDS) results were used in combination with Stratagem for the quantification. Further, X-ray fluorescence analysis (XRF) can be used for the determination of elemental composition and thickness of such films as well. In this case, XRF with a μ-focus X-ray source (μ-XRF) attached to a SEM was applied. For quantification, a fundamental parameter (FP) approach has been used to calculate standard-based and standardless results. Compared to EPMA, XRF has a larger information depth and a higher elemental sensitivity because of a generally lower background. Both thin film systems have been chosen as samples of an international round robin test (RRT) organised in the frame of standardisation technical committee ISO/TC 201 ‘Surface chemical analysis’, under the lead of KRISS. The main objective of the RRT is to compare the results of atomic fractions of Fe1-xNix and Si1-xGex alloy films obtained by different surface Analysis techniques, such as X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and secondary ion mass spectrometry (SIMS) applied in the depth-profiling operation mode. Five samples of different atomic fractions of each thin film system, i.e., Fe1-xNix and Si1-xGex, have been grown by ion beam sputter deposition on silicon and Al2O3 wafers, respectively. Reference FeNi and SiGe films with well-known elemental composition and thickness have been also supplied for standard-based analysis. The atomic fractions of all the samples including the references have been certified by RBS (Rutherford backscattering spectrometry) and ICP-AES (inductively coupled plasma atomic emission spectroscopy). T2 - EMAS 2019 - 16th European Workshop on MODERN DEVELOPMENTS AND APPLICATIONS IN MICROBEAM ANALYSIS CY - Trondheim, Norway DA - 19.05.2019 KW - Thin film analysis KW - SEM/EDS KW - EPMA KW - Fe-Ni KW - Si-Ge PY - 2019 AN - OPUS4-48104 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hodoroaba, Vasile-Dan A1 - Terborg, R. A1 - Boehm, S. A1 - Kim, K. J. T1 - Analysis of elemental composition of Fe1-xNix and Si1-xGex alloy thin films by electron probe microanalysis and micro-focus X-ray fluorescence N2 - The present study reports on results of analysis of the elemental composition of thin films by electron probe microanalysis with energy dispersive (ED-EPMA) X-ray spectrometry in conjunction with the dedicated thin-film analysis software package Stratagem and by X-ray fluorescence in its version with a micro-focus X-ray fluorescence (μ-XRF) source attached to a scanning electron microscope (SEM). Two thin-film systems have been analyzed: Fe1-xNix on silicon wafer and Si1-xGex on Al2O3 substrate, in both cases the layers being grown to a thickness of about 200 nm by ion beam sputter deposition. Samples of five different atomic fractions have been produced and analyzed for each thin-film system. Moreover, reference samples with certified elemental composition and thickness have been also available. This study is part of an interlaboratory comparison organized in the frame of standardization technical committee ISO/TC 201 “Surface chemical analysis.” Two laboratories have been analyzed by ED-EPMA (one laboratory standardless and one laboratory using both standardless and with standards variants) and one laboratory by μ-XRF (standardless and with standards). All the elemental compositions obtained with different methods are in very good agreement for the complete two sets of five samples each. KW - Thin films KW - Elemental composition KW - FeNi KW - SiGe KW - Electron probe microanalysis KW - X-ray Fluorescence PY - 2020 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:b43-509262 SN - 0142-2421 VL - 52 IS - 12 SP - 929 EP - 932 PB - John Wiley & Sons Ltd AN - OPUS4-50926 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Kim, K.J. A1 - Jang, J. S. A1 - Kim, A. S. A1 - Suh, J.K. A1 - Chung, Y.-D. A1 - Hodoroaba, Vasile-Dan A1 - Wirth, Thomas A1 - Unger, Wolfgang A1 - Kang, H. J. A1 - Popov, O. A1 - Popov, I. A1 - Kuselman, I. A1 - Lee, Y. H. A1 - Sykes, D. E. A1 - Wang, M. A1 - Wang, H. A1 - Ogiwara, T. A1 - Nishio, M. A1 - Tanuma, S. A1 - Simons, D. A1 - Szakal, C. A1 - Osborn, W. A1 - Terauchi, S. A1 - Ito, M. A1 - Kurokawa, A. A1 - Fujiimoto, T. A1 - Jordaan, W. A1 - Jeong, C. S. A1 - Havelund, R. A1 - Spencer, S. A1 - Shard, A. A1 - Streeck, C. A1 - Beckhoff, B. A1 - Eicke, A. A1 - Terborg, R. T1 - CCQM pilot study P-140: Quantitative surface analysis of multi-element alloy films N2 - A pilot study for the quantitative surface analysis of multi-element alloy films has been performed by the Surface Analysis Working Group (SAWG) of the Consultative Committee for Amount of Substance (CCQM). The aim of this pilot study is to ensure the equivalency in the measurement capability of national metrology institutes for the quantification of multi-element alloy films. A Cu(In,Ga)Se2 (CIGS) film with non-uniform depth distribution was chosen as a representative multi-element alloy film. The atomic fractions of the reference and the test CIGS films were certified by isotope dilution - inductively coupled plasma/mass spectrometry. A total number counting (TNC) method was used as a method to determine the signal intensities of the constituent elements, which are compared with their certified atomic fractions. The atomic fractions of the CIGS films were measured by various methods, such as Secondary Ion Mass Spectrometry (SIMS), Auger Electron Spectroscopy (AES), X-ray Photoelectron Spectroscopy (XPS), X-Ray Fluorescence (XRF) analysis and Electron Probe Micro Analysis (EPMA) with Energy Dispersive X-ray Spectrometry (EDX). Fifteen laboratories from eight National Metrology Institutes (NMIs), one Designated Institute (DI) and six non-NMIs participated in this pilot study. Although the average atomic fractions of 18 data sets showed rather poor relative standard deviations of about 5.5 % to 6.8 %, they were greatly improved to about 1.5 % to 2.2 % by excluding 5 strongly deviating data sets from the average atomic fractions. In this pilot study, the average expanded uncertainties of SIMS, XPS, AES, XRF and EPMA were 3.84%, 3.68%, 3.81%, 2.88% and 2.90%, respectively. These values are much better than those in the key comparison K-67 for composition of a Fe-Ni alloy film. As a result, the quantification of CIGS films using the TNC method was found to be a good candidate as a subject for a CCQM key comparison. KW - CCQM KW - Pilot study KW - Surface analysis KW - Alloy films KW - CIGS PY - 2015 U6 - https://doi.org/10.1088/0026-1394/52/1A/08017 SN - 0026-1394 SN - 1681-7575 VL - 52 IS - Technical Supplement SP - Article 08017 PB - Inst. of Physics Publ. CY - Bristol AN - OPUS4-35306 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hodoroaba, Vasile-Dan A1 - Terborg, R. A1 - Boehm, S. A1 - Kim, K. J. T1 - Analysis of Elemental Composition of Fe1-xNix and Si1-xGex Alloy Thin Films by EPMA and μ-XRF N2 - The present study reports on measurements on thin Fe-Ni films on silicon and first-time results of analysis on Si-Ge thin films deposited on a non-conductive aluminium oxide Substrate by electron probe microanalysis (EPMA). Standard-based and standardless EPMA (with EDS) results were used in combination with the thin film analysis software Stratagem for the quantification. Further, X-ray fluorescence analysis (XRF) can be used for the determination of elemental composition and thickness of such films as well. In this case, XRF with a μ-focus X-ray source (μ-XRF) attached to a SEM was applied. For quantification, a fundamental parameter (FP) approach has been used to calculate standard-based and standardless results. Both thin film systems have been chosen as samples of an international round robin test (RRT) organised in the frame of standardisation technical committee ISO/TC 201 ‘Surface chemical analysis’, under the lead of KRISS. The main objective of the RRT is to compare the results of atomic fractions of Fe1-xNix and Si1-xGex alloy films obtained by different surface Analysis techniques, such as X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and secondary ion mass spectrometry (SIMS) applied in the depth-profiling operation mode. Five samples of different atomic fractions of each thin film system, i.e., Fe1-xNix and Si1-xGex, have been grown by ion beam sputter deposition on silicon and Al2O3 wafers, respectively. Reference FeNi and SiGe films with well-known elemental composition and thickness have been also supplied for standard-based analysis. An excellent agreement has been obtained between the atomic fractions determined by EPMA and µ-XRF with the KRISS certified values.zeige mehr KW - Thin film analysis KW - EPMA KW - XRF KW - Fe-Ni KW - Si-Ge PY - 2019 U6 - https://doi.org/10.1017/S1431927619009668 VL - 25 SP - 1786 EP - 1787 PB - Cambridge University Press AN - OPUS4-49245 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hodoroaba, Vasile-Dan A1 - Terborg, R. A1 - Boehm, S. A1 - Kim, K. J. T1 - Analysis of elemental composition of Fe1-xNix and Si1-xGex alloy thin films by EPMA and µ-XRF N2 - The present study reports on measurements on thin Fe-Ni films on silicon and first-time results of analysis on Si-Ge thin films deposited on a non-conductive aluminium oxide Substrate by electron probe microanalysis (EPMA). Standard-based and standardless EPMA (with EDS) results were used in combination with the thin film analysis software Stratagem for the quantification. Further, X-ray fluorescence analysis (XRF) can be used for the determination of elemental composition and thickness of such films as well. In this case, XRF with a μ-focus X-ray source (μ-XRF) attached to a SEM was applied. For quantification, a fundamental parameter (FP) approach has been used to calculate standard-based and standardless results. Both thin film systems have been chosen as samples of an international round robin test (RRT) organised in the frame of standardisation technical committee ISO/TC 201 ‘Surface chemical analysis’, under the lead of KRISS. The main objective of the RRT is to compare the results of atomic fractions of Fe1-xNix and Si1-xGex alloy films obtained by different surface Analysis techniques, such as X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and secondary ion mass spectrometry (SIMS) applied in the depth-profiling operation mode. Five samples of different atomic fractions of each thin film system, i.e., Fe1-xNix and Si1-xGex, have been grown by ion beam sputter deposition on silicon and Al2O3 wafers, respectively. Reference FeNi and SiGe films with well-known elemental composition and thickness have been also supplied for standard-based analysis. An excellent agreement has been obtained between the atomic fractions determined by EPMA and µ-XRF with the KRISS certified values. T2 - Microscopy & Microanalysis 2019 CY - Portland, OR, USA DA - 03.08.2019 KW - Thin films KW - EPMA KW - µ-XRF KW - Elemental composition KW - Atomic fraction KW - Fe-Ni KW - Si-Ge PY - 2019 AN - OPUS4-48709 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hodoroaba, Vasile-Dan A1 - Terborg, R. A1 - Procop, Mathias T1 - Check of the performance of EDS systems attached to the SEM with the test material EDS-TM001/2 and evaluation software package EDS spectrometer test - Application, experiences and updates N2 - The test material EDS-TM001 together with an accompanying software package, “EDX spectrometer check”, have been made available in 2009 by BAM to be employed by EDS (energy dispersive spectrometer) users to check the performance of an EDS attached to the SEM. Particularly for test laboratories operating under accreditation schemes like ISO/IEC 17025, a periodical control of the critical instrumental parameters in end-user laboratories is required. With EDS-TM001 or EDS-TM002 (second generation) test material, this periodical check is simplified to the acquisition of only one 10 kV spectrum. The software “EDX spectrometer check” is destined to evaluate automatically this spectrum and determine the performance of the EDS in terms of energy resolution and calibration as well as possible alteration of low-energy efficiency due to detector contamination. Energy resolution can be compared with the specified values according to the international ISO standard ISO 15632:2012. EDS-TM is a synthetic material consisting of a thick layer of C, Al, Mn, Cu and Zr in a well-defined composition, deposited on a steel (in case of EDS-TM001) or silicon (in case of EDS-TM002) substrate. Meanwhile, more than one hundred laboratories use the EDS-TM001 or EDS-TM002 test material for the periodical check of their EDS. A detailed description of the test material and software together with examples of application was published recently. New results and gained experiences will be presented as well. When the FWHM of lines appearing in the EDS-TM spectrum are determined, the spectrum background must be subtracted accurately. The applied physical background subtraction procedure is robust and takes into account the transmission of the detector window. While the previous version considers only Moxtek AP windows, the new version includes selection of silicon nitride window and the case of windowless detector. Moreover, the new version allows importing of spectra in Bruker spx format and EMSA/MSA files from EDAX TEAM software. KW - EDS KW - Performance check KW - SEM KW - Test material KW - X-ray spectrometer PY - 2018 UR - https://www.cambridge.org/core/journals/microscopy-and-microanalysis/article/check-of-the-performance-of-eds-systems-attached-to-the-sem-with-the-test-material-edstm0012-and-evaluation-software-package-eds-spectrometer-test-application-experiences-and-updates/3D01FDC765C3ECD734CB8DEC7081DAE2 U6 - https://doi.org/10.1017/S1431927618004142 SN - 1431-9276 SN - 1435-8115 VL - 24 IS - S1 (August) SP - 730 EP - 731 PB - Cambridge University Press CY - New York, NY, U.S.A. AN - OPUS4-46006 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Terborg, R. A1 - Procop, Mathias T1 - Theoretical calculation and experimental determination of x-ray production efficiencies for copper, zirconium, and tungsten N2 - The X-ray intensities of the K-, L- and M-lines of copper, zirconium and tungsten have been measured with an energy-dispersive X-ray spectrometer of known efficiency as function of photon energy. X-ray production efficiencies were determined from the measured intensities for Kα- and L-series of Cu and Zr and for the L- and M-series of W. These data were compared to calculated X-ray production efficiencies based on the widely used matrix correction models of Pouchou and Pichoir (XPP) and Bastin (PROZA96). Our results indicate that a replacement of the stopping power in the PROZA96 algorithm by expressions of Joy and Jablonski has only a minor influence on the calculated X-ray production efficiencies. In contrast, the modifications of the ionization cross-section show a stronger effect. We replaced the ionization cross-sections for K lines of the PROZA96 algorithm with different models. The results for L- and M-Lines are different. For the L-lines of Cu the original XPP and PROZA96 models show the best agreement while using the Bote cross-sections result in an overestimation. For the Zr-L and W-L1, -L2, -L3 X-ray production efficiencies, the Bote cross-sections lead to a significant improvement compared to all other models. The original XPP model represents the best agreement for the M5 efficiencies but underestimates the M4 efficiencies. There is no superior model or modification because the parameter sets in the models need to be aligned to each other. However, using the ionization cross-sections of Bote, which are based on quantum mechanical calculations, show promising results in many cases. KW - X-ray production efficiency KW - EPMA KW - Copper KW - Zirconium KW - Tungsten PY - 2023 U6 - https://doi.org/10.1093/micmic/ozad067.110 SN - 1435-8115 VL - 29 IS - Supplement 1 SP - 245 EP - 246 PB - Oxford University Press CY - Oxford AN - OPUS4-58339 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Terborg, R. A1 - Kim, K. J. A1 - Hodoroaba, Vasile-Dan T1 - Elemental composition and thickness determination of thin films by electron probe microanalysis N2 - Electron probe microanalysis (EPMA) applies to solid samples of homogenous (bulk) chemical composition and can usually not be applied to structures which are inhomogeneous in the micrometer range such as thin film systems down to a few nm. However, in combination with the established thin film software Stratagem, the thickness as well as the elemental composition of thin films on a substrate can be determined. This has been recently successfully demonstrated for Fe-Ni on Si and Si-Ge on Al2O3 thin film systems. For both systems five samples of different elemental composition and a reference were produced and characterised by inductively coupled plasma mass spectrometry (ICP-MS), Rutherford backscattering (RBS), and transmission electron microscopy (TEM) as reference values. Last year, a new and open-source thin film evaluation programme called BadgerFilm has been released. It can also be used to determine thin film composition and thickness from intensity ratios of the unknown sample and standards (k-ratios). In this contribution, we reevaluated the data acquired for the Fe-Ni and Si-Ge systems using the BadgerFilm software package and compared the obtained elemental compositions and thickness values with the results of the Stratagem software and the reference methods. The conclusion is that the BadgerFilm software shows good agreement with the elemental composition and thickness calculated by Stratagem (mostly <2% for both composition and thickness) and with the reference values for two representative thin film systems (<1%–2% for composition and <10%–20% for thickness). KW - Elemental composition KW - EPMA KW - Film thickness KW - Thin films PY - 2023 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:b43-576368 SN - 0142-2421 VL - 55 SP - 496 EP - 500 PB - Wiley AN - OPUS4-57636 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Terborg, R. A1 - Hodoroaba, Vasile-Dan A1 - Kim, K.J. T1 - Determination of Thin Film Thickness and Composition using Energy Dispersive EPMA N2 - Electron probe microanalysis (EPMA)is a non-destructive technique which assumes a sample of homogenous (bulk) chemical composition and can, therefore, not be used for thin film samples. However, in combination with one of the possible thin film software packages, STRATAGEM, the thickness as well as the composition of such films on a substrate can be determined. This has been demonstrated for FeNi on Si and SiGe on Al2O3 film systems. For both systems five samples with different elemental composition and a reference were produced and characterised by the Korean research institute KRISS using inductively coupled plasma mass spectrometry (ICP-MS), Rutherford backscattering (RBS), and transmission electron microscopy (TEM). In 2021, a new and open source thin film evaluation programme called BADGERFILM has been released. It can also be used to determine thin film composition and thickness from intensity ratios of the unknown sample and standards (k-ratios). In this contribution, we re-evaluated the data acquired for the FeNi and SiGe systems using the BADGERFILM software package and compared the resulting composition and thickness with the results of the established STRATAGEM software and other reference methods. With the current evaluation, the BADGERFILM software shows good agreement with the composition and thickness calculated by STRATAGEM and provided by the KRISS. These results between two well-known layered material systems analysed with available conventional EMPA approaches (STRATAGEM and direct thickness measurement by TEM) and a new one (BADGERFILM) proves that reliable non-destructive thin film analysis is possible. In this way, we validate the performance of the new software, which is not at all self-explanatory for such complex quantification algorithms lying behind the final quantified results. T2 - EMAS 2023 - 17th European Workshop on Modern Developments and Applications in Microbeam Analysis CY - Krakow, Poland DA - 07.05.2023 KW - Thin films KW - BADGER film KW - Electron probe microanallysis (EPMA) KW - FeNi thin film KW - Al2O3 thin films PY - 2023 UR - https://www.microbeamanalysis.eu/events/event/60-emas-2023-17th-european-workshop-on-modern-developments-and-applications-in-microbeam-analysis AN - OPUS4-57484 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -