TY - JOUR A1 - Krüger, Oliver A1 - Kalbe, Ute A1 - Richter, E. A1 - Egeler, P. A1 - Römbke, J. A1 - Berger, Wolfgang T1 - New approach to the ecotoxicological risk assessment of artificial outdoor sporting grounds N2 - Artificial surfaces for outdoor sporting grounds may pose environmental and health hazards that are difficult to assess due to their complex chemical composition. Ecotoxicity tests can indicate general hazardous impacts. We conducted growth inhibition (Pseudokirchneriella subcapitata) and acute toxicity tests (Daphnia magna) with leachates obtained from batch tests of granular infill material and column tests of complete sporting ground assemblies. Ethylene propylene diene monomer rubber (EPDM) leachate showed the highest effect on Daphnia magna (EC50 < 0.4% leachate) and the leachate of scrap tires made of styrene butadiene rubber (SBR) had the highest effect on P. subcapitata (EC10 = 4.2% leachate; EC50 = 15.6% leachate). We found no correlations between ecotoxicity potential of leachates and zinc and PAH concentrations. Leachates obtained from column tests revealed lower ecotoxicological potential. Leachates of column tests of complete assemblies may be used for a reliable risk assessment of artificial sporting grounds. KW - Artificial outdoor sporting grounds KW - Ecotoxicological tests KW - Leaching procedures KW - Risk assessment PY - 2013 U6 - https://doi.org/10.1016/j.envpol.2012.12.024 SN - 0269-7491 SN - 0013-9327 SN - 1873-6424 VL - 175 SP - 69 EP - 74 PB - Elsevier Ltd. CY - New York, NY [u.a.] AN - OPUS4-27623 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Ressel, P. A1 - Hao, P.H. A1 - Park, M.H. A1 - Yang, Z. C. A1 - Wang, L.C. A1 - Österle, Werner A1 - Kurpas, P. A1 - Richter, E. A1 - Kuphal, E. A1 - Hartnagel, H.L. T1 - Pd/Sb(Zn) and Pd/Ge(Zn) Ohmic Contacts on p-Type Indium Gallium Arsenide: The Employment of the Solid Phase Regrowth Principle to Achieve Optimum Electrical and Metallurgical Properties N2 - The development of two metallizations based on the solid-phase regrowth principle is presented, namely Pd/Sb(Zn) and Pd/Ge(Zn) on moderately doped In0.53Ga0.47As (p=4×1018 cm-3). Contact resistivities of 2–3×10-7 and 6–7×10-7 ?cm2, respectively, have been achieved, where both systems exhibit an effective contact reaction depth of zero and a Zn diffusion depth below 50 nm. Exhibiting resistivities equivalent to the lowest values of Au-based systems in this doping range, especially Pd/Sb(Zn) contacts are superior to them concerning metallurgical stability and contact penetration. Both metallizations have been successfully applied for contacting the base layer of InP/In0.53Ga0.47As heterojunction bipolar transistors. KW - Ohmic contacts KW - Indium gallium arsenide KW - InP/InGaAs heterojunction bipolar transistor KW - Solid-phase regrowth KW - Pd/Ge contacts KW - Pd/Sb contacts KW - Backside secondary ion mass spectrometry (SIMS) PY - 2000 U6 - https://doi.org/10.1007/s11664-000-0189-y SN - 0361-5235 SN - 1543-186X VL - 29 IS - 7 SP - 964 EP - 972 PB - TMS CY - Warrendale, Pa. AN - OPUS4-7642 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -