TY - CONF A1 - Richter, M. A1 - Schultz, C. A1 - Bonse, Jörn A1 - Pahl, H.-U. A1 - Endert, H. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Stegemann, B. A1 - Fink, F. T1 - Laser-ablation behavior of thin-film materials used in silicon and CIGSe based solar cells N2 - Structuring of thin-film photovoltaic modules requires basic knowledge of the laser – thin-film interaction in order to adapt the accessible laser parameters, like wavelength, power, repetition rate and scribing speed whilst taking into account the specific material properties of the layer. We have studied the nanosecond laserablation behavior of corresponding layers (i) of silicon based thin-film solar cells with a-Si/µc-Si tandem absorber type and (ii) of back contact and absorber layer of CIGSe solar cells. The respective ablation threshold fluences were determined as integrative parameters describing the specific laser – material interaction. For the threshold determination we used two different methods and developed a new analytical approach taking into account scribing through the glass substrate as it is preferred for most structuring processes. This was done by analyzing the thin film ablation results by means of optical microscopy, profilometry, scanning electron microscopy (SEM). Moreover, we determined the incubation coefficient of the regarded material layers which allows us to predict quantitatively the influence of the spot overlap on the scribing threshold. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.011 KW - Laser processing KW - Ablation KW - Incubation KW - a-Si/my-Si KW - CIGS PY - 2011 SN - 3-936338-27-2 U6 - https://doi.org/10.4229/26thEUPVSEC2011-3DV.2.8 SP - 2943 EP - 2946 AN - OPUS4-24997 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Schultz, C. A1 - Schüle, M. A1 - Richter, M. A1 - Pahl, H.-U. A1 - Endert, H. A1 - Bonse, Jörn A1 - Dirnstorfer, I. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Fink, F. A1 - Stegemann, B. T1 - P1, P2 and P3 structuring of CIGSe solar cells with a single laser wavelength N2 - Manufacturing of CIGSe thin film solar modules involves typically one laser structuring step (P1) and two mechanical structuring steps (P2 and P3) for serial interconnection. In our approach, complete laser structuring is successfully demonstrated by application of short nanosecond laser pulses (<10 ns) with a single, visible wavelength of 532 nm. The P1 and the P3 trenches are scribed by induced and direct ablation, respectively. For the P2 scribe, the thermal input of the ns laser pulses is used to transform the CIGSe absorber layer locally into a highly conductive compound to provide proper electrical interconnection. These findings promise further simplification and flexibility to thin film solar cell production. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.2011 KW - Laser processing KW - Nanosecond pulses KW - Ablation KW - Cu(InGa)Se2 KW - Electrical properties PY - 2011 SN - 3-936338-27-2 U6 - https://doi.org/10.4229/26thEUPVSEC2011-3AV.1.35 SP - 2540 EP - 2543 AN - OPUS4-24998 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Stegemann, B. A1 - Schultz, C. A1 - Schüle, M. A1 - Richter, M. A1 - Pahl, H.-U. A1 - Endert, H. A1 - Bonse, Jörn A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Fink, F. ED - Luschtinetz, T. ED - Lehmann, J. T1 - Neuartige Laserstrukturierung von CIGSe-Dünnschicht-Solarzellen N2 - Ein wesentlicher Vorteil der Dünnschichtphotovoltaik gegenüber der waferbasierten Photovoltaik liegt in der monolithischen Serienverschaltung. Bei der Herstellung von Chalkopyrit(CIGSe) -Dünnschicht-Solarmodulen erfolgen dafür typischerweise ein Laser-Strukturierungsschritt (P1) und zwei mechanische Strukturierungsschritte (P2, P3). In diesem Beitrag wird gezeigt, dass die Strukturierung von CIGSe-Solarmodulen vollständig mit kurzen Laserpulsen (<10 ns Pulsdauer) und einer einzigen Wellenlänge (532 nm) möglich ist. Der P1- und P3-Schnitt erfolgen durch direkte induzierte Ablation. Für den P2-Schnitt wird gezielt der hohe Wärmeeintrag der ns-Laserpulse genutzt, um die CIGSe- Absorberschicht lokal aufzuschmelzen und strukturell so zu verändern, dass eine elektrisch gut leitende Verbindung zwischen Front- und Rückkontakt entsteht. N2 - A major advantage of thin film photovoltaics over wafer-based photovoltaics is the monolithic series connection. Manufacturing of chalcopyrite (CIGSe) thin film solar modules involves typically one laser structuring step (P1) and two mechanical structuring steps (P2 and P3) for serial interconnection. In our approach, complete laser structuring is successfully demonstrated simply by application of short nanosecond laser pulses (<10 ns) with a single, visible wavelength of 532 nm. The P1 and the P3 trenches are scribed by induced direct ablation. For the P2 scribe, the thermal input of the ns laser pulses is used to transform the CIGSe absorber layer locally into a highly conductive compound to provide proper electrical interconnection between the front and back contact. T2 - 18. Symposium "Nutzung regenerativer Energiequellen und Wasserstofftechnik" / VDI-Tagung "Energieland Mecklenburg-Vorpommern" CY - Stralsund, Germany DA - 03.11.2011 KW - Photovoltaik KW - Dünnschichtsolarzellen KW - Chalkopyrite KW - Laserstrukturierung PY - 2011 SN - 978-3-9813334-4-2 SP - 204 EP - 210 AN - OPUS4-24999 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Schultz, C. A1 - Schüle, M. A1 - Stelmaszczyk, K. A1 - Bonse, Jörn A1 - Witteck, R. A1 - Weizman, M. A1 - Rhein, H. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Stegemann, B. A1 - Fink, F. T1 - Film side laser patterning of molybdenum thin films sputter-deposited onto glass N2 - Serial interconnection of CIGSe thin film solar modules involves typically glass-side laser patterning of the molybdenum layer (P1 scribe). In this paper we present a working principle of P1 film side patterning. The investigated samples were sputter-deposited onto soda-lime glass substrates. For understanding the fundamental ablation behavior, two kinds of layer systems were studied: on the one hand monolayer systems which are compressively stressed and on the other hand bilayer systems, consisting of a tensile stressed layer on the substrate and a second layer on top. The film-side ablation process was studied using a nanosecond as well as a picosecond laser source. The influence of intrinsic stress was studied by XRD. Time resolved spectroscopy reveals the formation of plasma as important driving mechanism for ablation. It is shown that by proper adaption of the sputter conditions high-quality P1 film side patterning is achieved. T2 - 27th European photovoltaic solar energy conference and exhibition CY - Frankfurt, Germany DA - 24.09.2012 KW - Laser processing KW - Molybdenum KW - Strain KW - Ablation KW - Sputter deposition KW - Cu(InGa)Se2 PY - 2012 SN - 3-936338-28-0 U6 - https://doi.org/10.4229/27thEUPVSEC2012-3CV.1.6 SP - 2266 EP - 2272 AN - OPUS4-27208 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Stegemann, B. A1 - Richter, M. A1 - Schultz, C. A1 - Pahl, H.-U. A1 - Endert, H. A1 - Bonse, Jörn A1 - Rau, B. A1 - Quaschning, V. A1 - Fink, F. T1 - One wavelength fits all N2 - Structuring of Thin-film Solar Cells with a Single Laser Wavelength Structuring of a PV module into a number of cells is necessary to lower the current and to increase the voltage, and is typically accomplished with nanosecond laser pulses of different wavelengths. Duetothe many available laser sources, complex and expensive scribing Setups are necessary. To overcome this a concept for laser structuring of thin-film PV modules using a single wavelength allows prediction ofthe ablation behaviourfor a given laser pulse energy. KW - Thin-film solar cells KW - Nanosecond laser ablation KW - 532 nm wavelength KW - Laser scribing KW - Damage threshold PY - 2011 SN - 1869-8913 VL - 2 IS - 6 SP - 46 EP - 48 PB - Hüthig CY - Heidelberg AN - OPUS4-24158 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -