TY - JOUR A1 - Höpner, A. A1 - Seitz, H. A1 - Rechenberg, I. A1 - Bugge, C. A1 - Procop, Mathias A1 - Scheerschmidt, E. A1 - Queisser, A. T1 - TEM Characterization of the Interface Quality of MOVPE Grown Strained InGaAs/GaAs Heterostructures JF - Physica status solidi A KW - TEM KW - Laser PY - 1995 SN - 1862-6300 SN - 0031-8965 VL - 150 IS - 427 SP - 427 EP - 437 PB - Wiley-VCH CY - Berlin AN - OPUS4-598 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -