TY - JOUR A1 - Pritzkow, Wolfgang A1 - Vogl, Jochen A1 - Berger, Achim A1 - Ecker, Klaus A1 - Grötzschel, R. A1 - Klingbeil, Patrick A1 - Persson, L. A1 - Riebe, Gundel A1 - Wätjen, U. T1 - Contribution of ICP-IDMS to the certification of antimony implanted in a silicon wafer - comparison with RBS and INAA results N2 - A thin-layer reference material for surface and near-surface analytical methods was produced and certified. The surface density of the implanted Sb layer was determined by Rutherford backscattering spectrometry (RBS), instrumental neutron activation analysis (INAA), and inductively coupled plasma isotope dilution mass spectrometry (ICP-IDMS) equipped with a multi-collector. The isotopic abundances of Sb (121Sb and 123Sb) were determined by multi-collector ICP-MS and INAA. ICP-IDMS measurements are discussed in detail in this paper. All methods produced values traceable to the SI and are accompanied by a complete uncertainty budget. The homogeneity of the material was measured with RBS. From these measurements the standard uncertainty due to possible inhomogeneities was estimated to be less than 0.78% for fractions of the area increments down to 0.75 mm2 in size. Excellent agreement between the results of the three different methods was found. For the surface density of implanted Sb atoms the unweighted mean value of the means of four data sets is 4.8121016 cm-2 with an expanded uncertainty (coverage factor k=2) of 0.0921016 cm-2. For the isotope amount ratio R (121Sb/123Sb) the unweighted mean value of the means of two data sets is 1.435 with an expanded uncertainty (coverage factor k=2) of 0.006. KW - ICP-MS KW - IDMS KW - Reference material KW - Surface analysis PY - 2001 U6 - https://doi.org/10.1007/s002160100987 SN - 0937-0633 VL - 371 SP - 867 EP - 873 PB - Springer CY - Berlin AN - OPUS4-7220 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Ecker, Klaus A1 - Wätjen, U. A1 - Berger, Achim A1 - Persson, L. A1 - Pritzkow, Wolfgang A1 - Radtke, Martin A1 - Riesemeier, Heinrich T1 - RBS, SY-XRF, INAA and ICP-IDMS of antimony implanted in silicon - A multi-method approach to characterize and certify a reference material N2 - A layer of Sb atoms, implanted with an energy of 400 keV and a nominal dose of 5×1016 atoms/cm2 into a high purity silicon wafer, was certified for its areal density (atoms/cm2) using Rutherford backscattering spectrometry (RBS), instrumental neutron activation analysis (INAA) and inductively coupled plasma isotope dilution mass spectrometry (ICP-IDMS) and for its isotope ratio using INAA and ICP-IDMS. Excellent agreement between the results of the different independent methods was found. In the present work, the measurements of the homogeneity of the areal density of Sb, previously determined with RBS in spots having 1 mm diameter, are improved with synchrotron X-ray fluorescence analysis: Higher precision in even smaller sample spots allows to estimate a reduced inhomogeneity of the whole batch of samples of the order of only 0.4%. Thus the uncertainty of the certified value can further be reduced. Down to fractions of a chip with 0.3×0.4 mm2 area, the areal density is now certified as (4.81±0.06)×1016 Sb atoms/cm2, where the expanded uncertainty 0.06 (coverage factor k=2) corresponds to only 1.2%. The relative merits of the different analytical methods are discussed. KW - Certified reference material KW - RBS KW - INAA KW - ICP-IDMS KW - XRF KW - SY-XRF PY - 2002 U6 - https://doi.org/10.1016/S0168-583X(01)01038-2 SN - 0168-583X SN - 1872-9584 VL - 188 IS - 1-4 SP - 120 EP - 125 PB - Elsevier CY - Amsterdam AN - OPUS4-13870 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -