TY - JOUR A1 - Wendt, U. A1 - Nolze, Gert A1 - Heyse, H. T1 - Effect of crystal orientation on imaging contrast and sputter results during focused ion beam milling of Cu studied by FIB, EBSD, SEM, and AFM JF - Microscopy and Microanalysis N2 - During focused ion beam microscopy (FIB) of crystalline materials imaging contrast and milling result are effected by orientation of the crystals with respect to the incident ion beam. This is due to the possibility of ion channeling along preferred crystal directions which effects the depth at which interaction between ions and specimen atoms takes place. As a result of channeling emission of ion induced secondary electrons (iiSE) and secondary ions (SI) as well as the sputter rate decreases. Theoretical channeling orientations and critical angles can be calculated. These effects have been studied quantitatively for polycrystalline recrystallized Cu as a typical model case. KW - Electron backscatter diffraction KW - FIB KW - AFM KW - Crystal orientation PY - 2006 DO - https://doi.org/10.1017/S1431927606061812 SN - 1431-9276 SN - 1435-8115 VL - 12 IS - Suppl. 2 SP - 1302 EP - 1303 AN - OPUS4-38027 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -