TY - JOUR A1 - Bonse, Jörn A1 - Brzezinka, Klaus-Werner A1 - Meixner, A.J. T1 - Modifying single-crystalline silicon by femtosecond laser pulses: an analysis by micro Raman spectroscopy, scanning laser microscopy and atomic force microscopy N2 - The surface modification of single-crystalline silicon induced by single 130 femtosecond (fs) Ti:sapphire laser pulses (wavelength 800 nm) in air is investigated by means of micro Raman spectroscopy (?-RS), atomic force microscopy and scanning laser microscopy. Depending on the laser fluence, in some regions the studies indicate a thin amorphous top-layer as well as ablated and recrystallized zones. The single-pulse threshold fluences for melting, ablation and polycrystalline recrystallization are determined quantitatively. Several different topographical surface structures (rims and protrusions) are found. Their formation is discussed in the context of recent studies of the laser irradiation of silicon. In combination with a thin-film optical model, the thickness of the amorphous layer is determined by two independent and nondestructive optical methods to be in the order of several 10 nm. KW - Femtosecond laser ablation KW - Silicon KW - Raman spectroscopy KW - Atomic force microscopy KW - Laser scanning microscopy PY - 2004 U6 - https://doi.org/10.1016/S0169-4332(03)00881-X SN - 0169-4332 SN - 1873-5584 VL - 221 IS - 1-4 SP - 215 EP - 230 PB - North-Holland CY - Amsterdam AN - OPUS4-3224 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -