TY - CONF A1 - Thomsen-Schmidt, P. A1 - Hasche, K. A1 - Ulm, G. A1 - Herrmann, K. A1 - Krumrey, M. A1 - Ade, G. A1 - Stümpel, J. A1 - Procop, Mathias A1 - Beck, Uwe T1 - Realisation and metrological characterisation of thickness standards below 100 nm T2 - DVG Jahrestagung 2002 CY - Magdeburg, Germany DA - 2002-06-17 PY - 2002 SP - 1 EP - 9 PB - Deutsche Vakuum-Gesellschaft CY - Kaiserslautern AN - OPUS4-1936 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Hasche, K. A1 - Ulm, G. A1 - Herrmann, K. A1 - Krumrey, M. A1 - Ade, G. A1 - Sümpel, J. A1 - Busch, I. A1 - Thomsen-Schmidt, P. A1 - Schädlich, S. A1 - Schindler, A. A1 - Frank, W. A1 - Procop, Mathias A1 - Beck, Uwe T1 - About the calibration of thickness standards on the nanometer scale T2 - 3rd International EUSPEN conference ; 3rd International conference. European Society for Precision Engineering and Nanotechnology ; 4th General meeting. European Society for Precision Engineering and Nanotechnology CY - Eindhoven, The Netherlands DA - 2002-05-26 PY - 2002 SN - 90-386-2883-8 SP - 1 EP - 5 CY - Eindhoven AN - OPUS4-2283 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hasche, K. A1 - Herrmann, K. A1 - Thomsen-Schmidt, P. A1 - Krumrey, M. A1 - Ulm, G. A1 - Ade, G. A1 - Pohlenz, F. A1 - Stümpel, J. A1 - Busch, I. A1 - Schädlich, S. A1 - Frank, W. A1 - Hirsch, D. A1 - Schindler, A. A1 - Procop, Mathias A1 - Beck, Uwe T1 - Ein Beitrag zu kalibrierten Nanometerschichten für unterschiedliche Anwendungsbereiche N2 - Nanotechnologien werden gegenwärtig als leistungsfähige Oberflächentechniken in erheblichem Umfange industriell genutzt. Dabei spielen dünne Schichten und deren Kenndaten eine wesentliche Rolle, z.B. als Röntgenspiegel oder optische und magnetooptische Datenträger. Die Schichtdicke zählt hierbei zu den technologisch wichtigen Parametern. Abgeleitet von Anwenderinteressen, werden für die Röntgenreflektometrie (XRR bzw. GIXR), Elektronenstrahl-Mikroanalyse (EPMA) und Röntgenfluoreszenzanalyse (XRF) einerseits und die Ellipsometrie andererseits zugeschnittene Schichtdickenmaßverkörperungen (SDM) entwickelt, gefertigt und untersucht. Das Ziel ist die Bereitstellung praxistauglicher, kalibrierter SDM, im weiteren Schichtdickennormale (SDN) genannt. SDN sind Maßverkörperungen, für die der Schichtdickenwert mit einer definierten Messunsicherheit bekannt und auf ein metrologisch anerkanntes Längennormal zurückgeführt ist. Berichtet wird über die Herstellung und messtechnische Charakterisierung der beiden spezifischen Varianten von Maßverkörperungen. T2 - 47. Internationales Wissenschaftliches Kolloquium. Technische Universität Ilmenau ; Herbstkonferenz der Gesellschaft für Arbeitswissenschaft ; 6. Workshop Multimedia für Bildung und Wirtschaft CY - Ilmenau, Deutschland DA - 2002-09-23 PY - 2002 UR - http://publica.fraunhofer.de/documents/N-14872.html VL - 47 SP - 568 EP - 569 PB - Techn. Univ. CY - Ilmenau AN - OPUS4-2284 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Koenders, L. A1 - Hasche, K. A1 - Ulm, G. A1 - Krumrey, M. A1 - Ade, G. A1 - Stümpel, J. A1 - Busch, I. A1 - Thomsen-Schmidt, P. A1 - Schädlich, S. A1 - Schindler, A. A1 - Frank, W. A1 - Beck, Uwe A1 - Procop, Mathias T1 - Über die metrologische Charakterisierung von Schichtdicken Standards im Nanometerbereich T2 - 12th Applied Surface Analysis Workshop ; AOFA 12 CY - --- DA - 2002-09-15 PY - 2002 AN - OPUS4-2285 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Seah, M.P. A1 - Spencer, S.J. A1 - Bensebaa, F. A1 - Vickridge, I. A1 - Danzebrink, H. A1 - Krumrey, M. A1 - Gross, Thomas A1 - Österle, Werner A1 - Wendler, E. A1 - Rheinländer, B. A1 - Azuma, Y. A1 - Kojima, I. A1 - Suzuki, N. A1 - Suzuki, M. A1 - Tanuma, S. A1 - Moon, D.W. A1 - Lee, H.J. A1 - Cho, H.M. A1 - Chen, H.Y. A1 - Wee, A. T. S. A1 - Osipowicz, T. A1 - Pan, J.S. A1 - Jordaan, W.A. A1 - Hauert, R. A1 - Klotz, U. A1 - van der Marel, C. A1 - Verheijen, M. A1 - Tamminga, Y. A1 - Jeynes, C. A1 - Bailey, P. A1 - Biswas, S. A1 - Falke, U. A1 - Nguyen, N.V. A1 - Chandler-Horowitz, D. A1 - Ehrstein, J.R. A1 - Muller, D. A1 - Dura, J.A. T1 - Critical review of the current status of thickness measurements for ultrathin SiO2 on Si - Part V: Results of a CCQM pilot study N2 - Results are reported from a pilot study under the Consultative Committee for Amount of Substance (CCQM) to compare measurements of and resolve any relevant measurement issues in, the amount of thermal SiO2 oxide on (100) and (111) orientation Si wafer substrates in the thickness range 1.5 - 8 nm. As a result of the invitation to participate in this activity, 45 sets of measurements have been made in different laboratories using 10 analytical methods: medium-energy ion scattering spectrometry (MEIS), nuclear reaction analysis (NRA), RBS, elastic backscattering spectrometry (EBS), XPS, SIMS, ellipsometry, grazing-incidence x-ray reflectrometry (GIXRR), neutron reflectometry and transmission electron microscopy (TEM). The measurements are made on separate sets of 10 carefully prepared samples, all of which have been characterised by a combination of ellipsometry and XPS using carefully established reference conditions and reference parameters. The results have been assessed against the National Physical Laboratory (NPL) data and all show excellent linearity. The remaining data sets correlate with the NPL data with average root-mean-square scatters of 0.15 nm, half being better than 0.1 nm and a few at or better than 0.05 nm. Each set of data allows a relative scaling constant and a zero thickness offset to be determined. Each method has an inherent zero thickness offset between 0 nm and 1 nm and it is these offsets, measured here for the first time, that have caused many problems in the past. There are three basic classes of offset: water and carbonadeous contamination equivalent to ~1 nm as seen by ellipsometry; adsorbed oxygen mainly from water at an equivalent thickness of 0.5 nm as seen by MEIS, NRA, RBS and possibly GIXRR; and no offset as seen by XPS using the Si 2p peaks. Each technique has a different uncertainty for the scaling constant and consistent results have been achieved. X-Ray photoelectron spectroscopy has large uncertainties for the scaling constant but a high precision and, critically, if used correctly, has zero offset. Thus, a combination of XPS and the other methods allows the XPS scaling constant to be determined with low uncertainty, traceable via the other methods. XPS laboratories returning results early were invited to test a new reference procedure. All showed very significant improvements. The reference attenuation lengths thus need scaling by 0.986 ± 0.009 (at an expansion factor of 2) deduced from the data for the other methods. Several other methods have small offsets and, to the extent that these can be shown to be constant or measurable, then these methods will also show low uncertainty. Recommendations are provided for parameters for XPS, MEIS, RBS and NRA to improve their accuracy. KW - Calibration KW - Ellipsometry KW - GIXRR KW - Interlaboratory study KW - MEIS KW - Neutron reflectometry KW - NRA KW - RBS KW - Silicon dioxide KW - SIMS KW - XPS PY - 2004 DO - https://doi.org/10.1002/sia.1909 SN - 0142-2421 SN - 1096-9918 VL - 36 IS - 9 SP - 1269 EP - 1303 PB - Wiley CY - Chichester AN - OPUS4-5549 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Procop, Mathias A1 - Radtke, Martin A1 - Krumrey, M. A1 - Hasche, K. A1 - Schädlich, S. A1 - Frank, W. T1 - Electron probe microanalysis (EPMA) measurement of thin-film thickness in the nanometre range N2 - The thickness of thin films of platinum and nickel on fused silica and silicon substrates has been determined by EPMA using the commercial software STRATAGEM for calculation of film thickness. Film thickness ranged in the order 10 nm. An attempt was made to estimate the confidence range of the method by comparison with results from other methods of analysis. The data show that in addition to the uncertainty of the spectral intensity measurement and the complicated fitting routine, systematic deviation caused by the underlying model should be added. The scattering in the results from other methods does not enable specification of a range of uncertainty, but deviations from the real thickness are estimated to be less than 20%. KW - Electron probe microanalysis KW - EPMA KW - Thin films KW - Thickness measurement KW - X-rays PY - 2002 DO - https://doi.org/10.1007/s00216-002-1514-5 SN - 1618-2642 SN - 1618-2650 VL - 374 SP - 631 EP - 634 PB - Springer CY - Berlin AN - OPUS4-7090 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Riesemeier, Heinrich A1 - Ecker, Klaus A1 - Görner, Wolf A1 - Müller, Bernd R. A1 - Radtke, Martin A1 - Krumrey, M. T1 - Layout and first XRF Applications of the BAMline at BESSY II+ N2 - The first hard x-ray beamline at BESSY II has been installed by BAM and PTB at a superconducting 7 T wavelength shifter. The main optical elements of the beamline are a double-multilayer monochromator and a double-crystal monochromator. Depending on the application, the two devices are used separately or in-line. The main applications of the monochromatic radiation with photon energies up to 60 keV are x-ray fluorescence analysis, micro computed tomography, x-ray topography, detector calibration and reflectometry. Calculable undispersed radiation up to 200 keV is available for radiometric applications. KW - BAMline KW - XRF PY - 2005 DO - https://doi.org/10.1002/xrs.750 SN - 0049-8246 VL - 34 IS - 2 SP - 160 EP - 163 PB - Wiley CY - Chichester AN - OPUS4-11929 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Thomsen-Schmidt, P. A1 - Hasche, K. A1 - Ulm, G. A1 - Herrmann, K. A1 - Krumrey, M. A1 - Ade, G. A1 - Stümpel, J. A1 - Busch, I. A1 - Schädlich, S. A1 - Schindler, A. A1 - Frank, W. A1 - Hirsch, D. A1 - Procop, Mathias A1 - Beck, Uwe T1 - Realisation and metrological characterisation of thickness standards below 100 nm N2 - High-accuracy film thickness measurements in the range below 100 nm can be made by various complex methods like spectral ellipsometry (SE), scanning force microscopy (SFM), grazing incidence X-ray reflectometry (GIXR), or X-ray fluorescence analysis (XRF). The measurement results achieved with these methods are based on different interactions between the film and the probe. A key question in nanotechnology is how to achieve consistent results on a level of uncertainty below one nanometre with different techniques. Two different types of thickness standards are realised. Metal film standards for X-ray techniques in the thickness range 10 to 50 nm are calibrated by GIXR with monochromatised synchrotron radiation of 8048 eV. The results obtained at four different facilities show excellent agreement. SiO2 on Si standards for SE and SFM in the thickness range 6 to 1000 nm are calibrated by GIXR with monochromatised synchrotron radiation of 1841 eV and with a metrological SFM. Consistent results within the combined uncertainties are obtained with the two methods. Surfaces and interfaces of both types of standards are additionally investigated by transmission electron microscopy (TEM). PY - 2004 DO - https://doi.org/10.1007/s00339-003-2273-7 SN - 0947-8396 VL - 78 IS - 5 SP - 645 EP - 649 PB - Springer CY - Berlin AN - OPUS4-17195 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Görner, Wolf A1 - Hentschel, Manfred P. A1 - Müller, Bernd R. A1 - Riesemeier, Heinrich A1 - Krumrey, M. A1 - Ulm, G. T1 - The first hard X-rays at the BAMline PY - 2001 UR - http://www.helmholtz-berlin.de/media/media/oea/web/pr_webseite/druckschriften/berichte/bessy/annualreport2000.pdf#page=329 SN - 0179-4159 SP - 329 EP - 331 PB - Berliner Elektronenspeicherring-Gesellschaft für Synchrotronstrahlung CY - Berlin AN - OPUS4-1299 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - RPRT A1 - Seah, M.P. A1 - Spencer, S.J. A1 - Bensebaa, F. A1 - Vickridge, I. A1 - Danzebrink, H. A1 - Krumrey, M. A1 - Gross, Thomas A1 - Österle, Werner A1 - Wendler, E. A1 - Rheinländer, B. A1 - Azuma, Y. A1 - Kojima, I. A1 - Suzuki, N. A1 - Suzuki, M. A1 - Tanuma, S. A1 - Moon, D.W. A1 - Lee, H.J. A1 - Cho, H.M. A1 - Chen, H.Y. A1 - Wee, A. T. S. A1 - Osipowicz, T. A1 - Pan, J.S. A1 - Jordaan, W.A. A1 - Hauert, R. A1 - Klotz, U. A1 - van der Marel, C. A1 - Verheijen, M. A1 - Tamminga, Y. A1 - Jeynes, C. A1 - Bailey, P. A1 - Biswas, S. A1 - Falke, U. A1 - Nguyen, N.V. A1 - Chandler-Horowitz, D. A1 - Ehrstein, J.R. A1 - Muller, D. A1 - Dura, J.A. T1 - Ultra-thin SiO2 on Si, Part V: Results of a CCQM Pilot Study of Thickness Measurements KW - SiO2 KW - Thin films KW - Thickness KW - XPS KW - Ellipsometry KW - TEM PY - 2003 SN - 1473-2734 SP - 57 pages AN - OPUS4-4118 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -