TY - GEN A1 - Kautek, Wolfgang A1 - Sorg, N. A1 - Krüger, Jörg ED - Brieger, M. T1 - Optical second-harmonic generation (SHG) on semiconductor electrodes by means of femtosecond and nanosecond-pulse lasers N2 - In situ optical second-harmonic generation (SHG) on centrosymmetric crystalline semiconductor electrodes opens up a new field of in situ investigations of hurried solid state interfaces and metal front contacts relevant to electronic and photovoltaic devices, which are rarely accessible by other methods. Photoelectrochemical nanosecond- and femtosecond-pulse laser investigations of silicon (111) electrodes show that in situ SHG is feasible in such complex interfacial systems. In a p-p polarization configuration, the azimuthal dependence of the SHG from oxide-covered and bare n-Si (111) electrodes, with and without Ni contact deposits, have been studied. Etching and regrowth of silicon oxides as well as burried interfacial electric field distributions were monitored. In situ SHG is shown to be extremely sensitive to trapped interfacial charge, crystal misorientations and surface step arrays. An advantage of femtosecond-pulses is the fact that illumination fluences that are well below the damage threshold, but still with sufficient power density, can be applied. (Author) T2 - 1st International Symposium on Semiconductor Processing and Characterization with Lasers - Applications in Photovoltaics CY - Stuttgart, Germany DA - 1994-04-18 KW - Femtosecond-Pulse Laser KW - Sub-Picosecond-Pulse Laser KW - Semiconductors KW - Silicon KW - Second-Harmonic Generation KW - SHG KW - Nonlinear Electroreflectance KW - Etch Process KW - Oxide KW - Interfacial Electronic States KW - Fermi-Level Pinning KW - MOS Diode PY - 1995 SN - 0-87849-683-1 U6 - https://doi.org/10.4028/www.scientific.net/MSF.173-174.285 SN - 0255-5476 N1 - Serientitel: Materials science forum – Series title: Materials science forum IS - 173/174 SP - 285 EP - 290 PB - Trans Tech Publ. CY - Aedermannsdorf AN - OPUS4-11672 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Kautek, Wolfgang A1 - Krüger, Jörg ED - Brieger, M. T1 - Femtosecond-pulse laser microstructuring of semiconducting materials T2 - 1st International Symposium on Semiconductor Processing and Characterization with Lasers - Applications in Photovoltaics CY - Stuttgart, Germany DA - 1994-04-18 KW - Femtosecond-Pulse Laser KW - Subpicosecond-Pulse Laser KW - Laser-Ablation KW - Multi-Photon Absorption KW - Microstructuring KW - Dry Etching KW - Semiconductors KW - Silicon PY - 1995 SN - 0-87849-683-1 SN - 0255-5476 N1 - Serientitel: Materials science forum – Series title: Materials science forum IS - 173/174 SP - 17 EP - 22 PB - Trans Tech Publ. CY - Aedermannsdorf AN - OPUS4-11671 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Rosenfeld, A. A1 - Krüger, Jörg ED - Panchenko, V. ED - Mourou, G. ED - Zheltikov, A. M. T1 - Femtosecond laser-induced periodic surface structures: recent approaches to explain their sub-wavelength periodicities N2 - The formation of laser-induced periodic surface structures (LIPSS) upon irradiation of semiconductors and dielectrics by linearly polarized high-intensity Ti:sapphire fs-laser pulses (τ ~100 fs, λ ~800 nm) is studied experimentally and theoretically. In the experiments, two different types of LIPSS exhibiting very different spatial periods are observed (socalled LSFL – low spatial frequency LIPSS, and HSFL - high spatial frequency LIPSS), both having a different dependence on the incident laser fluence and pulse number per spot. The experimental results are analyzed by means of a new theoretical approach, which combines the generally accepted LIPSS theory of J. E. Sipe and co-workers [Phys. Rev. B 27, 1141-1154 (1983)] with a Drude model, in order to account for transient changes of the optical properties of the irradiated materials. The joint Sipe-Drude model is capable of explaining numerous aspects of fs-LIPSS formation, i.e., the orientation of the LIPSS, their fluence dependence as well as their spatial periods. The latter aspect is specifically demonstrated for silicon crystals, which show experimental LSFL periods Λ somewhat smaller than λ. This behaviour is caused by the excitation of surface plasmon polaritons, SPP, (once the initially semiconducting material turns to a metallic state upon formation of a dense free-electron-plasma in the material) and the subsequent interference between its electrical fields with that of the incident laser beam, resulting in a spatially modulated energy deposition at the surface. Upon multi-pulse irradiation, a feedback mechanism, caused by the redshift of the resonance in a grating-assisted SPP excitation, is further reducing the LSFL spatial periods. The SPP-based mechanism of LSFL successfully explains the remarkably large range of LSFL periods between ~0.6 λ and λ. T2 - LAT 2010 - International Conference on Lasers, Applications, and Technologies CY - Kazan, Russia DA - 23.08.2010 KW - Femtosecond laser ablation KW - Laser-induced periodic surface structures (LIPSS) KW - Surface plasmon polaritons KW - Second harmonic generation (SHG) KW - Silicon KW - Semiconductors KW - Dielectrics PY - 2011 U6 - https://doi.org/10.1117/12.879813 SN - 0277-786X N1 - Serientitel: Proceedings of SPIE – Series title: Proceedings of SPIE VL - 7994 SP - 79940M-1 EP - 79940M-10 CY - Bellingham, USA AN - OPUS4-23291 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -