TY - JOUR A1 - Kim, K.J. A1 - Unger, Wolfgang A1 - Kim, J.W. A1 - Moon, D.W. A1 - Gross, Thomas A1 - Hodoroaba, Vasile-Dan A1 - Schmidt, Dieter A1 - Wirth, Thomas A1 - Jordaan, W. A1 - van Staden, M. A1 - Prins, S. A1 - Zhang, L. A1 - Fujimoto, T. A1 - Song, X.P. A1 - Wang, H. T1 - Inter-laboratory comparison: quantitative surface analysis of thin Fe-Ni alloy films N2 - An international interlaboratory comparison of the measurement capabilities of four National Metrology Institutes (NMIs) and one Designated Institute (DI) in the determination of the chemical composition of thin Fe-Ni alloy films was conducted via a key comparison (K-67) of the Surface Analysis Working Group of the Consultative Committee for Amount of Substance. This comparison was made using XPS (four laboratories) and AES (one laboratory) measurements. The uncertainty budget of the measured chemical composition of a thin alloy film was dominated by the uncertainty of the certified composition of a reference specimen which had been determined by inductively coupled plasma mass spectrometry using the isotope dilution method. Pilot study P-98 showed that the quantification using relative sensitivity factors (RSFs) of Fe and Ni derived from an alloy reference sample results in much more accurate result in comparison to an approach using RSFs derived from pure Fe and Ni films. The individual expanded uncertainties of the participants in the K-67 comparison were found to be between 2.88 and 3.40 atomic %. The uncertainty of the key comparison reference value (KCRV) calculated from individual standard deviations and a coverage factor (k) of 2 was 1.23 atomic %. KW - Quantification KW - Fe-Ni alloy KW - Uncertainty KW - Key comparison KW - Traceability PY - 2012 U6 - https://doi.org/10.1002/sia.3795 SN - 0142-2421 SN - 1096-9918 VL - 44 IS - 2 SP - 192 EP - 199 PB - Wiley CY - Chichester AN - OPUS4-24505 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Kim, K.J. A1 - Kim, J.W. A1 - Moon, D.W. A1 - Wirth, Thomas A1 - Hodoroaba, Vasile-Dan A1 - Gross, Thomas A1 - Unger, Wolfgang A1 - Jordaan, W. A1 - Staden, M.v. A1 - Prins, S. A1 - Wang, H. A1 - Song, X. A1 - Zhang, L. A1 - Fujimoto, T. A1 - Kojima, I. T1 - Final report on key comparison K67 and parallel pilot study P108: measurement of composition of a thin Fe-Ni alloy film N2 - The Key Comparison K67 and the parallel Pilot Study P108 on quantitative analysis of thin alloy films have been completed in the Surface Analysis Working Group (SAWG) of the Consultative Committee for Amount of Substance (CCQM). The aim of these inter-laboratory comparisons is to determine the degree of equivalence in the measurement capability of national metrology institutes (NMIs) and designated institutes (DIs) for the determination of the composition of thin alloy films. The measurand is expressed in atomic percent. A Fe-Ni alloy film with a certified composition was available for the participants of the inter-laboratory comparison. It has been used as a reference specimen to determine the relative sensitivity factors (RSF) of Fe and Ni for the different analytical methods used by the participants to determine the composition of the test sample. As was shown in the preceding Pilot Study P98, the degrees of equivalence in the measurement capabilities of the participants can be improved in that way. The composition of the reference specimen was certified by inductively coupled plasma mass spectrometry (ICP-MS) using the isotope dilution method. The in-depth and lateral homogeneity, determined in terms of elemental composition, of the certified reference sample and the unknown test sample were confirmed by secondary ion mass spectrometry (SIMS) using C60 primary ions by the leading laboratory. Five laboratories participated in the key comparison. Four of them used x-ray photoelectron spectroscopy (XPS) and one Auger electron spectroscopy (AES). One laboratory participated in the parallel P108 pilot study using electron probe micro analysis with an energy-dispersive spectrometer (ED EPMA) and XPS. KW - XPS KW - AES KW - EDX KW - Fe-Ni alloy film KW - Key comparison KW - CCQM PY - 2010 U6 - https://doi.org/10.1088/0026-1394/47/1A/08011 SN - 0026-1394 SN - 1681-7575 VL - 47 IS - 1A SP - 08011-1 - 08011-15 PB - Inst. of Physics Publ. CY - Bristol AN - OPUS4-21045 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hodoroaba, Vasile-Dan A1 - Kim, K.J. A1 - Unger, Wolfgang T1 - Energy dispersive electron probe microanalysis (ED-EPMA) of elemental composition and thickness of Fe-Ni alloy films N2 - The elemental composition of thin Fe-Ni alloy films deposited on silicon substrates were determined by electron probe microanalysis with an energy dispersive spectrometer using the STRATAGem software. The work was part of ample inter-laboratory comparisons organized in the frame of CCQM/SAWG (Consultative Committee for Amount of Substance/Surface Analysis Working Group). Therefore, the evaluation of the measurement uncertainties is treated in detail. By having the mass coverage and estimating a layer density, the layer thickness could be derived. KW - Thin films KW - Fe-Ni KW - Energy dispersive electron probe microanalysis (ED-EPMA) KW - STRATAGem KW - k-values KW - Mass coverage KW - Elemental composition KW - Thickness KW - CCQM PY - 2012 U6 - https://doi.org/10.1002/sia.4975 SN - 0142-2421 SN - 1096-9918 VL - 44 IS - 11-12 SP - 1459 EP - 1461 PB - Wiley CY - Chichester AN - OPUS4-27139 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Kim, K.J. A1 - Kim, C.S. A1 - Ruh, S. W. A1 - Unger, Wolfgang A1 - Radnik, Jörg A1 - Mata-Salazar, J. A1 - Juarez-Garcia, J.M. A1 - Cortazar-Martinez, O. A1 - Herrera-Gomez, A. A1 - Hansen, P.E. A1 - Madesen, J.S. A1 - Senna, C.A. A1 - Archanjo, B.S. A1 - Damasceno, J.C. A1 - Achete, C.A. A1 - Wang, H. A1 - Wang, M. A1 - Windover, D. A1 - Steel, E. A1 - Kurokawa, A. A1 - Fujimoto, T. A1 - Azuma, Y. A1 - Terauchi, S. A1 - Zhang, L. A1 - Jordaan, W.A. A1 - Spencer, S.J. A1 - Shard, A.G. A1 - Koenders, L. A1 - Krumrey, M. A1 - Busch, I. A1 - Jeynes, C. T1 - Thickness measurement of nm HfO2 films N2 - A pilot study for the thickness measurement of HfO2 films was performed by the Surface Analysis Working Group (SAWG) of the Consultative Committee for Amount of Substance (CCQM). The aim of this pilot study was to ensure the equivalency in the measurement capability of national metrology institutes for the thickness measurement of HfO2 films. In this pilot study, the thicknesses of six HfO2 films with nominal thickness from 1 nm to 4 nm were measured by X-ray Photoelectron Spectroscopy (XPS), X-ray Reflectometry(XRR), X-ray Fluorescence Analysis (XRF), Transmission Electron Spectroscopy (TEM), Spectroscopic Ellipsometry (SE) and Rutherford Backscattering Spectrometry (RBS). The reference thicknesses were determined by mutual calibration of a zero-offset method (Medium Energy Ion Scattering Spectroscopy (MEIS) of KRISS) and a method traceable to the length unit (the average thicknesses of three XRR data except the thinnest film). These reference thicknesses are traceable to the length unit because they are based on the traceability of XRR. For the thickness measurement by XPS, the effective attenuation length of Hf 4f electrons was determined. In the cases of XRR and TEM, the offset values were determined from a linear fitting between the reference thicknesses and the individual data by XRR and TEM. The amount of substance of HfO2, expressed as thickness of HfO2 films (in both linear and areal density units), was found to be a good subject for a CCQM key comparison. To reach the main text of this paper, click on Final Report. The final report has been peer-reviewed and approved for publication by the CCQM. KW - Thickness measurements KW - nm films KW - X-ray Photoelectron Spectroscopy KW - Mutual calibration PY - 2021 U6 - https://doi.org/10.1088/0026-1394/58/1A/08016 SN - 0026-1394 VL - 58 IS - 1a SP - 08016 PB - IOP Publishing Lt. CY - Bristol AN - OPUS4-54175 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Terborg, R. A1 - Kim, K. J. A1 - Hodoroaba, Vasile-Dan T1 - Determination of Thin Film Thickness and Composition using Energy Dispersive EPMA N2 - The thickness of thin films can be measured by various methods, e.g., profilometry, ellipsometry, atomic force microscopy (AFM), or X-ray reflectometry. For the additional determination of thin film composition, techniques like X-ray photoelectron spectroscopy (XPS) or mass spectrometry-based techniques can be used. An alternative non-destructive technique is electron probe microanalysis (EPMA). This method assumes a sample of homogenous (bulk) chemical composition, so that it cannot be usually applied to thin film samples. However, in combination with the thin film software StrataGEM, the thickness as well as the composition of such films on a substrate can be determined. This has been demonstrated for FeNi on Si and SiGe on Al2O3 film systems. For both systems five samples with different elemental composition and a reference were produced and characterised by Korean research institute KRISS using inductively coupled plasma mass spectrometry (ICP-MS), Rutherford backscattering (RBS), and transmission electron microscopy (TEM). These samples were used for an international round robin test. In 2021, a new and open-source thin film evaluation programme called BadgerFilm has been released. It can also be used to determine thin film composition and thickness from intensity ratios of the unknown sample and standards (k-ratios). In this contribution, we re-evaluated the data acquired for the FeNi and SiGe systems using the BadgerFilm software package and compared the resulting composition and thickness with the results of the established StrataGEM software and other reference methods. With the current evaluation, the BadgerFilm software shows good agreement with the composition and thickness calculated by StrataGEM and as the reference values provided by the KRISS. KW - Thin films KW - Elemental composition KW - Film thickness KW - EPMA (Electron Probe Microanalysis) PY - 2022 U6 - https://doi.org/10.1017/S143192762200318X VL - 28 IS - Suppl. 1 SP - 672 EP - 673 PB - Cambridge University Press AN - OPUS4-55437 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hodoroaba, Vasile-Dan A1 - Wirth, Thomas A1 - Terborg, R. A1 - Kim, K.J. A1 - Unger, Wolfgang T1 - Measurement of atomic fractions in Cu(In,Ga)Se2 films by Auger Electron Spectroscopy (AES) and Energy Dispersive Electron Probe Microanalysis (ED-EPMA) N2 - A pilot study (PS) has been performed under the Consultative Committee for Amount of Substance (CCQM) / Surface Analysis Working Group (SAWG) with the objective to compare the atomic fractions of Cu, In, Ga and Se in CIGS alloy films. Four polycrystalline CIGS films with different atomic fractions were fabricated by variation of the relative atomic fraction of Ga on 100 mm x 100 mm soda-lime glass (SLG) substrates. Similar to real solar cells the atomic fractions of the four elements (Cu, In, Ga, Se) are not homogeneous with depth. For the analysis of the CIGS layers of about 2 μm thickness depth profiling with surface analysis techniques such as XPS, AES and SIMS was recommended. A CIGS alloy reference sample with atomic fractions certified by isotope dilution ICP-MS at KRISS has been also put at disposal by the coordinator of the comparison. The certified values were close to the atomic fractions of the samples to be analyzed. Hence, the atomic fractions of Cu, In, Ga and Se in the CIGS films could be determined by the relative sensitivity factors (RSF) derived from the reference CIGS film. The total ion intensities of the constituent elements were obtained by the total number counting (TNC) method. KW - Interlaboratory comparison KW - Auger Electron Spectroscopy (AES) KW - EDX KW - EPMA KW - CIGS KW - CCQM PY - 2014 U6 - https://doi.org/10.1017/S1431927614003730 SN - 1431-9276 SN - 1435-8115 VL - 20 IS - Suppl. S 3 SP - 402 EP - 403 PB - Cambridge University Press CY - New York, NY AN - OPUS4-31339 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Kim, K. J. A1 - Kim, A. S. A1 - Jang, J. S. A1 - Suh, J. K. A1 - Wirth, Thomas A1 - Hodoroaba, Vasile-Dan A1 - Unger, Wolfgang A1 - Araujo, J. R. A1 - Archanjo, B. S. A1 - Galhardo, C. E. A1 - Damasceno, J. A1 - Achete, C. A. A1 - Wang, H. A1 - Wang, M. A1 - Bennett, J. A1 - Simons, D. A1 - Kurokawa, A. A1 - Terauchi, S. A1 - Fujimoto, T. A1 - Streeck, C. A1 - Beckhoff, B. A1 - Spencer, S. A1 - Shard, A. T1 - Measurement of mole fractions of Cu, In, Ga and Se in Cu(In,Ga)Se2 films N2 - CCQM key comparison K-129 for the quantitative analysis of Cu(In,Ga)Se2 (CIGS) films has been performed by the Surface Analysis Working Group (SAWG) of the Consultative Committee for Amount of Substance (CCQM). The objective of this key comparison is to compare the equivalency of the National Metrology Institutes (NMIs) and Designated Institutes (DIs) for the measurement of mole fractions of Cu, In, Ga and Se in a thin CIGS film. The measurand of this key comparison is the average mole fractions of Cu, In, Ga and Se of a test CIGS alloy film in the unit of mole fraction (mol/mol). Mole fraction with the metrological unit of mol/mol can be practically converted to atomic fraction with the unit of at%. In this key comparison, a CIGS film with certified mole fractions was supplied as a reference specimen to determine the relative sensitivity factors (RSFs) of Cu, In, Ga and Se. The mole fractions of the reference specimen were certified by isotope dilution - inductively coupled plasma/mass spectrometry (ID-ICP/MS) and are traceable to the SI. A total number counting (TNC) method was recommended as a method to determine the signal intensities of the constituent elements acquired in the depth profiles by Secondary Ion Mass Spectrometry (SIMS), X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). Seven NMIs and one DI participated in this key comparison. The mole fractions of the CIGS films were measured by depth profiling based-SIMS, AES and XPS. The mole fractions were also measured by non-destructive X-Ray Fluorescence (XRF) Analysis and Electron Probe Micro Analysis (EPMA) with Energy Dispersive X-ray Spectrometry (EDX). In this key comparison, the average degrees of equivalence uncertainties for Cu, In, Ga and Se are 0.0093 mol/mol, 0.0123 mol/mol, 0.0047 mol/mol and 0.0228 mol/mol, respectively. These values are much smaller than that of Fe in a Fe-Ni alloy film in CCQM K-67 (0.0330 mol/mol). This means that the quantification of multi-element alloy films is possible by depth profiling analysis using the TNC method. KW - CIGS KW - Key comparison KW - CCQM KW - SIMS KW - XPS KW - AES KW - XRF KW - EPMA PY - 2016 UR - http://iopscience.iop.org/article/10.1088/0026-1394/53/1A/08011 U6 - https://doi.org/10.1088/0026-1394/53/1A/08011 SN - 0026-1394 SN - 1681-7575 VL - 53, Technical Supplement SP - Article 08011, 1 EP - 19 PB - IOP Publishing AN - OPUS4-38110 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hodoroaba, Vasile-Dan A1 - Terborg, R. A1 - Boehm, S. A1 - Kim, K. J. T1 - Analysis of elemental composition of Fe1-xNix and Si1-xGex alloy thin films by electron probe microanalysis and micro-focus X-ray fluorescence N2 - The present study reports on results of analysis of the elemental composition of thin films by electron probe microanalysis with energy dispersive (ED-EPMA) X-ray spectrometry in conjunction with the dedicated thin-film analysis software package Stratagem and by X-ray fluorescence in its version with a micro-focus X-ray fluorescence (μ-XRF) source attached to a scanning electron microscope (SEM). Two thin-film systems have been analyzed: Fe1-xNix on silicon wafer and Si1-xGex on Al2O3 substrate, in both cases the layers being grown to a thickness of about 200 nm by ion beam sputter deposition. Samples of five different atomic fractions have been produced and analyzed for each thin-film system. Moreover, reference samples with certified elemental composition and thickness have been also available. This study is part of an interlaboratory comparison organized in the frame of standardization technical committee ISO/TC 201 “Surface chemical analysis.” Two laboratories have been analyzed by ED-EPMA (one laboratory standardless and one laboratory using both standardless and with standards variants) and one laboratory by μ-XRF (standardless and with standards). All the elemental compositions obtained with different methods are in very good agreement for the complete two sets of five samples each. KW - Thin films KW - Elemental composition KW - FeNi KW - SiGe KW - Electron probe microanalysis KW - X-ray Fluorescence PY - 2020 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:b43-509262 SN - 0142-2421 VL - 52 IS - 12 SP - 929 EP - 932 PB - John Wiley & Sons Ltd AN - OPUS4-50926 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Kim, K.J. A1 - Jang, J. S. A1 - Kim, A. S. A1 - Suh, J.K. A1 - Chung, Y.-D. A1 - Hodoroaba, Vasile-Dan A1 - Wirth, Thomas A1 - Unger, Wolfgang A1 - Kang, H. J. A1 - Popov, O. A1 - Popov, I. A1 - Kuselman, I. A1 - Lee, Y. H. A1 - Sykes, D. E. A1 - Wang, M. A1 - Wang, H. A1 - Ogiwara, T. A1 - Nishio, M. A1 - Tanuma, S. A1 - Simons, D. A1 - Szakal, C. A1 - Osborn, W. A1 - Terauchi, S. A1 - Ito, M. A1 - Kurokawa, A. A1 - Fujiimoto, T. A1 - Jordaan, W. A1 - Jeong, C. S. A1 - Havelund, R. A1 - Spencer, S. A1 - Shard, A. A1 - Streeck, C. A1 - Beckhoff, B. A1 - Eicke, A. A1 - Terborg, R. T1 - CCQM pilot study P-140: Quantitative surface analysis of multi-element alloy films N2 - A pilot study for the quantitative surface analysis of multi-element alloy films has been performed by the Surface Analysis Working Group (SAWG) of the Consultative Committee for Amount of Substance (CCQM). The aim of this pilot study is to ensure the equivalency in the measurement capability of national metrology institutes for the quantification of multi-element alloy films. A Cu(In,Ga)Se2 (CIGS) film with non-uniform depth distribution was chosen as a representative multi-element alloy film. The atomic fractions of the reference and the test CIGS films were certified by isotope dilution - inductively coupled plasma/mass spectrometry. A total number counting (TNC) method was used as a method to determine the signal intensities of the constituent elements, which are compared with their certified atomic fractions. The atomic fractions of the CIGS films were measured by various methods, such as Secondary Ion Mass Spectrometry (SIMS), Auger Electron Spectroscopy (AES), X-ray Photoelectron Spectroscopy (XPS), X-Ray Fluorescence (XRF) analysis and Electron Probe Micro Analysis (EPMA) with Energy Dispersive X-ray Spectrometry (EDX). Fifteen laboratories from eight National Metrology Institutes (NMIs), one Designated Institute (DI) and six non-NMIs participated in this pilot study. Although the average atomic fractions of 18 data sets showed rather poor relative standard deviations of about 5.5 % to 6.8 %, they were greatly improved to about 1.5 % to 2.2 % by excluding 5 strongly deviating data sets from the average atomic fractions. In this pilot study, the average expanded uncertainties of SIMS, XPS, AES, XRF and EPMA were 3.84%, 3.68%, 3.81%, 2.88% and 2.90%, respectively. These values are much better than those in the key comparison K-67 for composition of a Fe-Ni alloy film. As a result, the quantification of CIGS films using the TNC method was found to be a good candidate as a subject for a CCQM key comparison. KW - CCQM KW - Pilot study KW - Surface analysis KW - Alloy films KW - CIGS PY - 2015 U6 - https://doi.org/10.1088/0026-1394/52/1A/08017 SN - 0026-1394 SN - 1681-7575 VL - 52 IS - Technical Supplement SP - Article 08017 PB - Inst. of Physics Publ. CY - Bristol AN - OPUS4-35306 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hodoroaba, Vasile-Dan A1 - Terborg, R. A1 - Boehm, S. A1 - Kim, K. J. T1 - Analysis of Elemental Composition of Fe1-xNix and Si1-xGex Alloy Thin Films by EPMA and μ-XRF N2 - The present study reports on measurements on thin Fe-Ni films on silicon and first-time results of analysis on Si-Ge thin films deposited on a non-conductive aluminium oxide Substrate by electron probe microanalysis (EPMA). Standard-based and standardless EPMA (with EDS) results were used in combination with the thin film analysis software Stratagem for the quantification. Further, X-ray fluorescence analysis (XRF) can be used for the determination of elemental composition and thickness of such films as well. In this case, XRF with a μ-focus X-ray source (μ-XRF) attached to a SEM was applied. For quantification, a fundamental parameter (FP) approach has been used to calculate standard-based and standardless results. Both thin film systems have been chosen as samples of an international round robin test (RRT) organised in the frame of standardisation technical committee ISO/TC 201 ‘Surface chemical analysis’, under the lead of KRISS. The main objective of the RRT is to compare the results of atomic fractions of Fe1-xNix and Si1-xGex alloy films obtained by different surface Analysis techniques, such as X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and secondary ion mass spectrometry (SIMS) applied in the depth-profiling operation mode. Five samples of different atomic fractions of each thin film system, i.e., Fe1-xNix and Si1-xGex, have been grown by ion beam sputter deposition on silicon and Al2O3 wafers, respectively. Reference FeNi and SiGe films with well-known elemental composition and thickness have been also supplied for standard-based analysis. An excellent agreement has been obtained between the atomic fractions determined by EPMA and µ-XRF with the KRISS certified values.zeige mehr KW - Thin film analysis KW - EPMA KW - XRF KW - Fe-Ni KW - Si-Ge PY - 2019 U6 - https://doi.org/10.1017/S1431927619009668 VL - 25 SP - 1786 EP - 1787 PB - Cambridge University Press AN - OPUS4-49245 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hodoroaba, Vasile-Dan A1 - Kim, K. J. T1 - Measurement of Elemental Composition of FeNi and SiGe Thin Films by Electron Probe Microanalysis with Stratagem Software N2 - The present study repeats electron probe microanalysis (EPMA) measurements with the thin film analysis software Stratagem on an Fe-Ni thin films on silicon and reports - for the first-time – results of analysis on Si-Ge thin films deposited on a non-conductive aluminium oxide substrate. If the very good EPMA/Stratagem results for the FeNi system were expected due to previous studies [2], the data obtained for the SiGe films are particularly valuable, because of the challenging insulator substrate of Al2O3. The conductivity of the Si1-xGex surface necessary for charging-free analysis was ensured by applying conductive copper tape onto film surface down to sample stage. Four accelerating voltages, 15, 20, 25 and 30 kV, have been applied, so that the Ge Kα X-ray line at 9.87 keV could be excited. KW - thin film analysis KW - X-ray spectroscopy KW - Fe-Ni KW - Si-Ge KW - Stratagem KW - Electron probe microanalysis (EPMA) PY - 2018 UR - https://www.cambridge.org/core/journals/microscopy-and-microanalysis/article/measurement-of-elemental-composition-of-feni-and-sige-thin-films-by-electron-probe-microanalysis-with-stratagem-software/D4CF5D45B11FCF0DEC8155A89EDACF25 U6 - https://doi.org/10.1017/S1431927618004282 VL - 24 IS - S1 (August) SP - 758 EP - 759 PB - Cambridge University Press CY - New York, NY, U.S.A. AN - OPUS4-45950 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Terborg, R. A1 - Kim, K. J. A1 - Hodoroaba, Vasile-Dan T1 - Elemental composition and thickness determination of thin films by electron probe microanalysis N2 - Electron probe microanalysis (EPMA) applies to solid samples of homogenous (bulk) chemical composition and can usually not be applied to structures which are inhomogeneous in the micrometer range such as thin film systems down to a few nm. However, in combination with the established thin film software Stratagem, the thickness as well as the elemental composition of thin films on a substrate can be determined. This has been recently successfully demonstrated for Fe-Ni on Si and Si-Ge on Al2O3 thin film systems. For both systems five samples of different elemental composition and a reference were produced and characterised by inductively coupled plasma mass spectrometry (ICP-MS), Rutherford backscattering (RBS), and transmission electron microscopy (TEM) as reference values. Last year, a new and open-source thin film evaluation programme called BadgerFilm has been released. It can also be used to determine thin film composition and thickness from intensity ratios of the unknown sample and standards (k-ratios). In this contribution, we reevaluated the data acquired for the Fe-Ni and Si-Ge systems using the BadgerFilm software package and compared the obtained elemental compositions and thickness values with the results of the Stratagem software and the reference methods. The conclusion is that the BadgerFilm software shows good agreement with the elemental composition and thickness calculated by Stratagem (mostly <2% for both composition and thickness) and with the reference values for two representative thin film systems (<1%–2% for composition and <10%–20% for thickness). KW - Elemental composition KW - EPMA KW - Film thickness KW - Thin films PY - 2023 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:b43-576368 SN - 0142-2421 VL - 55 SP - 496 EP - 500 PB - Wiley AN - OPUS4-57636 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -