TY - GEN A1 - Rudolph, Pascale A1 - Krüger, Jörg A1 - Kautek, Wolfgang T1 - Mikrostrukturierung von Glas zur Erzeugung kristalliner Si-Schichten PY - 2000 IS - 12 SP - 7 EP - 36 PB - VDI-Verl. CY - Düsseldorf AN - OPUS4-985 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Kautek, Wolfgang A1 - Li, G. A1 - Koßmehl, G. A1 - Hunnius, W. A1 - Zhu, H. A1 - Plieth, W. A1 - Melsheimer, J. A1 - Doblhofer, K. T1 - Relative groups on polymer coated electrodes - 10. Electrogenerated conducting polyalkylthiophenes bearing activated ester groups N2 - Three new thiophene derivatives containing different activated ester groups covalently attached to the thiophene ring via a linear undecyl spacer have been synthesized. Electropolymerization of these monomers in acetonitrile led to stable electroactive polymers, while activated functional groups withstand the polymerization conditions and were correctly incorporated in the resulting polymers. These polymers show the characteristic electrochemical behavior of poly(3-alkylthiophene)s with the reversible redox transition in the range of 0.7–0.9 V. UV/Vis spectra of them exhibit an absorption maximum at around 460 nm. Conductivity measurements on oxidized films of these polymers by means of the two-probe method gave values in the range of 10-3–10-2 S cm-1. The reactivity of the pendant activated ester groups was demonstrated by the reaction with butylamine, (4-amino-2-oxabutyl) ferrocene and 2-aminoanthraquinone. Spectroscopic studies and electrochemical characterization confirmed that the immobilized amino compounds are covalently bound to the polymer surfaces. These results suggest that the obtained new polymers can be used as electrically conducting carrier materials for the immobilization of biochemically interesting molecules. KW - Conducting polyalkylthiophene KW - Electropolymerization KW - Activated ester PY - 2000 DO - https://doi.org/10.1016/S0032-3861(99)00201-3 SN - 0032-3861 SN - 1873-2291 VL - 41 IS - 2 SP - 423 EP - 432 PB - Springer CY - Berlin AN - OPUS4-884 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Kautek, Wolfgang A1 - Li, G. A1 - Koßmehl, G. A1 - Plieth, W. A1 - Melsheimer, J. A1 - Doblhofer, K. A1 - Zhu, H. T1 - New conducting carrier materials: polyalkylthiophene functionalized with 1,2-diol group and its protected forms KW - Polyalkylthiophene KW - Conjugated Polymers KW - New conducting carrier materials PY - 1999 SN - 0323-7648 SN - 1521-4044 IS - 50 SP - 252 EP - 259 PB - Wiley-VCH Verl. CY - Weinheim AN - OPUS4-885 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Kautek, Wolfgang A1 - Conradi, Andrea A1 - Sahre, Mario A1 - Fabjan, Ch. A1 - Drobits, J. A1 - Bauer, G. A1 - Schuster, P. T1 - In Situ Investigations of Bromine-Storing Complex Formation in a Zinc-Flow Battery at Gold Electrodes KW - Bromine-storing PY - 1999 SN - 0013-4651 SN - 1945-7111 VL - 146 IS - 9 SP - 3211 EP - 3216 PB - Electrochemical Society CY - Pennington, NJ AN - OPUS4-886 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Krüger, Jörg A1 - Kautek, Wolfgang A1 - Lenzner, M. A1 - Sartania, S. A1 - Spielmann, C. A1 - Krausz, F. T1 - Laser micromachining of barium aluminium borosilicate glass with pulse durations between 20 fs and 3 ps N2 - Laser-micromachining of high-tech glass has been extended down to a pulse duration of 20 fs generated by a Ti sapphire laser system at a wavelength of 780 nm. A systematic electronmicroscopic study shows that, below 100 fs, an extreme precision and a substantial decrease of the ablation threshold fluence with respect to pulse laser processing with pulses in the picosecond and nanosecond range could be achieved. The technical relevance of this novel microtechnology is discussed. The morphology of the ablated areas is not determined by thermal processes, i.e. the heat affected zone. It is controlled by non-linear optical coupling effects. Multi-photon absorption becomes highly efficient below laser pulse durations of 100 fs so that light penetration is minimized and ablation cavities become smooth. At longer pulse durations, a higher light penetration due to a lower number of non-linearly absorbed photons allows mechanical relaxation processes in the glass material leading to roughening. KW - Laser micromachining KW - Subpicosecond laser ablation KW - Barium aluminium borosilicate glass PY - 1998 DO - https://doi.org/10.1016/S0169-4332(97)00763-0 SN - 0169-4332 SN - 1873-5584 IS - 127-129 SP - 892 EP - 898 PB - North-Holland CY - Amsterdam AN - OPUS4-887 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Sahre, Mario A1 - Reetz, Susanne A1 - Kautek, Wolfgang A1 - Lindner, B. A1 - Medovic, A. A1 - Sleytr, U. A1 - Neubauer, A. ED - Hasche, K. ED - Mirande, W. ED - Wilkening, G. T1 - Gradient Composite Replicas from Protein Crystal Layer Templates produced by Pulsed Laser Deposition T2 - 4th Seminar on Quantitative Microscopy QM 2000 CY - Semmering, Austria DA - 2000-01-12 KW - Pulsed Laser KW - Protein Crystal Layer Templates PY - 2000 SN - 3-89701-503-X SN - 0179-0609 N1 - Serientitel: PTB-Bericht: PTB-F – Series title: PTB-Bericht: PTB-F IS - 39 SP - 8 EP - 16 PB - Physikalisch-Techn. Bundesanst. CY - Braunschweig AN - OPUS4-881 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Handrea-Haller, Marlene A1 - Kautek, Wolfgang A1 - Patsalas, P. A1 - Logothetidis, S. A1 - Gioti, M. A1 - Kennou, S. T1 - A complementary study of bonding and electronic structure of amorphous Carbon films by electron spectroscopy and optical techniques N2 - A complementary study of composition and bonding of sputtered a-C films, deposited on Si(001) substrates with various bias voltages (Vb) applied to the substrate during deposition is presented. The sp3 and sp2 fractions in the films were calculated by deconvolution of the X-ray photoelectron spectroscopy (XPS) C1s peak and studied by the differential auger electron spectroscopy (AES) CKLL peak signal. The results of this analysis are compared with the estimation of sp3 fraction calculated by spectroscopic ellipsometry (SE) and validated using density measurements by X-ray reflectivity. It was observed a considerable increase of sp3 content in films deposited with negative Vb. The respective sp3 and sp2 fractions and Ar concentration with respect to the Vb and the depth profile analysis give valuable information on the deposition mechanism of the sputtered a-C films. XPS valence band spectra provided the electron density of states in the a-C films’ valence band. The characteristic broad p band of diamond was prominent in most of the films. The valence band structure of the films was correlated with their optical response measured by SE. KW - Diamond growth & characterization KW - Electron Spectroscopy KW - Spectroscopic Ellipsometry KW - Band structure PY - 2001 DO - https://doi.org/10.1016/S0925-9635(00)00480-5 SN - 0925-9635 N1 - Geburtsname von Handrea-Haller, Marlene: Handrea, M. - Birth name of Handrea-Haller, Marlene: Handrea, M. VL - 10 IS - 3-7 SP - 960 EP - 964 PB - Elsevier CY - New York, NY AN - OPUS4-924 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Handrea-Haller, Marlene A1 - Kautek, Wolfgang A1 - Laskarakis, A. A1 - Logothetidis, S. A1 - Charitidis, C. A1 - Gioti, M. A1 - Panayiotatos, Y. T1 - A study on the bonding structure and mechanical properties of magnetron sputtered CNx thin films N2 - Carbon nitride (CNx) films have been deposited by reactive (RF) magnetron sputtering, in order to investigate the effect of the energetic ion bombardment during deposition (IBD), in terms of applied Vb, on their bonding structure. Fourier Transform IR Ellipsometry (FTIRE) and X-ray photoelectron spectroscopy (XPS) were used for the investigation of the films bonding structure, while their mechanical properties were evaluated by nanoindentation measurements. At films grown with low negative Vb, (low energy IBD) the N atoms are distributed homogeneously in substitutional sites in graphitic rings through both sp2 and sp3 bonds and in linear chains, through sp2 bonds. In contrast, the high negative Vb (high energy IBD) has been suggested to promote the non-homogeneous N distribution at localized regions in the films where the formation of sp3 C---N bonds is favored. This behavior was also evidenced by the C1s and N1s XPS peak components, assigned to the sp3 and sp2 carbon–nitrogen bonds. Also, high energy IBD films revealed increased values of hardness and elasticity, while hardness values up to 45 GPa were measured at localized regions. KW - Nitrides KW - FTIR Ellipsometry KW - Small Spot XPS KW - Nanoindentation PY - 2001 DO - https://doi.org/10.1016/S0925-9635(00)00576-8 SN - 0925-9635 N1 - Geburtsname von Handrea-Haller, Marlene: Handrea, M. - Birth name of Handrea-Haller, Marlene: Handrea, M. VL - 10 IS - 3-7 SP - 1179 EP - 1184 PB - Elsevier CY - New York, NY AN - OPUS4-925 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Krüger, Jörg A1 - Kautek, Wolfgang A1 - Niino, H. T1 - Biomaterial immobilization on polyurethane films by XeCl excimer laser processing N2 - Zusammenfassung The surface chemical modification of polyurethane (PU) films was performed by an UV laser-induced chemical reaction in a polysaccharide solution. This process may be applicable as hydrophilic packaging of implantable medical devices and in vivo sensors. When a PU film in contact with an aqueous alginic acid (AAC) solution was irradiated with a XeCl laser, the PU film turned hydrophilic. Contact angles of water on the film were reduced from 110° to 60°. Since light absorption of the AAC solution at 308 nm was negligibly small, reactive sites were generated solely on the PU surface. There, AAC could be immobilized by chemical bonds thus allowing for a nanometer-scaled grafting of this biomolecule. The mechanism was investigated by surface analyses with Fourier-transform infrared spectroscopy (FT-IR), dye staining, ultraviolet-visible (UV-VIS) spectroscopy, and scanning electron microscopy (SEM) techniques. A one-photon photochemical process could beidentified. PY - 2001 DO - https://doi.org/10.1007/s003390000617 SN - 0947-8396 VL - 72 IS - 1 SP - 53 EP - 57 PB - Springer CY - Berlin AN - OPUS4-926 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Kautek, Wolfgang A1 - Wrobel, J. M. T1 - Femtosecond pulse laser machining of InP wafers N2 - Ablation of indium phosphide wafers in air was performed with 130 fs laser pulses at a wavelength of 800 nm at a low repetition rate of 10 Hz. In order to evaluate the role of the incubation effects, the relationship between the number of laser pulses used for the ablation and the threshold fluence was studied. Particular attention was paid to the chemical composition, surface morphology and structural variations of the ablated area. T2 - 5th Laser Applications in Microelectronics and Optoelectronics Manufacturing Conference (LAMOM) CY - San José, CA, USA DA - 240.01.2000 KW - Femtosecond laser ablation KW - Indium phosphide KW - Auger electron spectroscopy PY - 2000 SN - 0-8194-3550-3 SN - 1605-7422 N1 - Serientitel: SPIE proceedings series – Series title: SPIE proceedings series IS - 3933 SP - 280 EP - 287 PB - SPIE CY - Bellingham, Wash. AN - OPUS4-937 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Krüger, Jörg A1 - Bonse, Jörn A1 - Baudach, Steffen A1 - Kautek, Wolfgang A1 - Lenzner, M. A1 - Wrobel, J. M. T1 - Femtosecond-Pulse Laser Machining of Semiconducting Materials N2 - Summary form only given. Machining investigations of crystalline silicon have been performed with laser pulses at a wavelength of 780 nm in the range between 5 fs and 400 fs. Applying 100 pulses per spot, surface damage thresholds were determined by the measurement of the damage diameter. In this pulse duration regime, the threshold fluences were nearly constant. Single-pulse investigations with 5 fs pulses yielded a value of about 0.15 J cm-2 identical to the multi-pulse experiment. This is in contradiction to the behaviour of dielectrics where incubation effects alter the optical properties down to the 5 fs pulse regime. Employing laser pulses with a duration of 130 fs at a wavelength of 800 nm, single-pulse ablation thresholds of 0.23 J cm-2 and 0.16 J cm-2 were determined for Si and InP in air, respectively. The threshold fluence was calculated from the linear relation between the square of the diameters versus the logarithm of the laser fluences. T2 - CLEO/Europe 2000 ; Conference on Lasers and Electro-Optics Europe ; Conférence Européenne sur les Lasers et l'Electro-Optique ; CLEO/Europe-IQEC CY - Nice, France DA - 2000-09-10 PY - 2000 SN - 0-7803-6319-1 DO - https://doi.org/10.1109/CLEOE.2000.910410 PB - IEEE Service Center CY - Piscataway, NJ AN - OPUS4-958 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Kautek, Wolfgang T1 - Laserstrahlreinigung von historischem Pergament und Papier T2 - 4. Forum "Laser in der Restaurierung und Denkmalpflege" CY - Leipzig, Deutschland DA - 2000-10-27 KW - Laser PY - 2000 CY - Leipzig AN - OPUS4-903 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -