TY - JOUR A1 - Dietrich, Paul A1 - Glamsch, Stephan A1 - Ehlert, Christopher A1 - Lippitz, Andreas A1 - Kulak, N. A1 - Unger, Wolfgang T1 - Synchrotron-radiation XPS analysis of ultra-thin silane films: Specifying the organic silicon N2 - The analysis of chemical and elemental in-depth variations in ultra-thin organic layers with thicknesses below 5 nm is very challenging. Energy- and angle-resolved XPS (ER/AR-XPS) opens up the possibility for non-destructive chemical ultra-shallow depth profiling of the outermost surface layer of ultra-thin organic films due to its exceptional surface sensitivity. For common organic materials a reliable chemical in-depth analysis with a lower limit of the XPS information depth z95 of about 1 nm can be performed. As a proof-of-principle example with relevance for industrial applications the ER/AR-XPS analysis of different organic monolayers made of amino- or benzamidosilane molecules on silicon oxide surfaces is presented. It is demonstrated how to use the Si 2p core-level region to non-destructively depth-profile the organic (silane monolayer) – inorganic (SiO2/Si) interface and how to quantify Si species, ranging from elemental silicon over native silicon oxide to the silane itself. The main advantage of the applied ER/AR-XPS method is the improved specification of organic from inorganic silicon components in Si 2p core-level spectra with exceptional low uncertainties compared to conventional laboratory XPS. KW - Synchrotron radiation XPS KW - Depth profiling KW - Silanes KW - Monolayer KW - Amines KW - Amides PY - 2016 U6 - https://doi.org/10.1016/j.apsusc.2015.12.052 SN - 0169-4332 SN - 1873-5584 VL - 363 SP - 406 EP - 411 PB - Elsevier B.V. CY - Amsterdam AN - OPUS4-35262 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -