TY - JOUR A1 - Dietrich, Paul A1 - Streeck, C. A1 - Glamsch, Stephan A1 - Ehlert, Christopher A1 - Lippitz, Andreas A1 - Nutsch, A. A1 - Kulak, N. A1 - Beckhoff, B. A1 - Unger, Wolfgang T1 - Quantification of silane molecules on oxidized silicon: Are there options for a traceable and absolute determination? N2 - Organosilanes are used routinely to functionalize various support materials for further modifications. Nevertheless, reliable quantitative information about surface functional group densities after layer formation is rarely available. Here, we present the analysis of thin organic nanolayers made from nitrogen containing silane molecules on naturally oxidized silicon wafers with reference-free total reflection X-ray fluorescence (TXRF) and X-ray photoelectron spectroscopy (XPS). An areic density of 2−4 silane molecules per nm2 was calculated from the layer’s nitrogen mass deposition per area unit obtained by reference-free TXRF. Complementary energy and angle-resolved XPS (ER/ARXPS) in the Si 2p core-level region was used to analyze the outermost surface region of the organic (silane layer)−inorganic (silicon wafer) interface. Different coexisting silicon species as silicon, native silicon oxide, and silane were identified and quantified. As a result of the presented proof-of-concept, absolute and traceable values for the areic density of silanes containing nitrogen as intrinsic marker are obtained by calibration of the XPS methods with reference-free TXRF. Furthermore, ER/AR-XPS is shown to facilitate the determination of areic densities in (mono)layers made from silanes having no heteroatomic marker other than silicon. After calibration with reference-free TXRF, these areic densities of silane molecules can be determined when using the XPS component intensity of the silane’s silicon atom. PY - 2015 U6 - https://doi.org/10.1021/acs.analchem.5b02846 SN - 0003-2700 SN - 1520-6882 VL - 87 IS - 19 SP - 10117 EP - 10124 PB - American Chemical Society CY - Washington, DC AN - OPUS4-34796 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Dietrich, Paul A1 - Glamsch, Stephan A1 - Ehlert, Christopher A1 - Lippitz, Andreas A1 - Kulak, N. A1 - Unger, Wolfgang T1 - Synchrotron-radiation XPS analysis of ultra-thin silane films: Specifying the organic silicon N2 - The analysis of chemical and elemental in-depth variations in ultra-thin organic layers with thicknesses below 5 nm is very challenging. Energy- and angle-resolved XPS (ER/AR-XPS) opens up the possibility for non-destructive chemical ultra-shallow depth profiling of the outermost surface layer of ultra-thin organic films due to its exceptional surface sensitivity. For common organic materials a reliable chemical in-depth analysis with a lower limit of the XPS information depth z95 of about 1 nm can be performed. As a proof-of-principle example with relevance for industrial applications the ER/AR-XPS analysis of different organic monolayers made of amino- or benzamidosilane molecules on silicon oxide surfaces is presented. It is demonstrated how to use the Si 2p core-level region to non-destructively depth-profile the organic (silane monolayer) – inorganic (SiO2/Si) interface and how to quantify Si species, ranging from elemental silicon over native silicon oxide to the silane itself. The main advantage of the applied ER/AR-XPS method is the improved specification of organic from inorganic silicon components in Si 2p core-level spectra with exceptional low uncertainties compared to conventional laboratory XPS. KW - Synchrotron radiation XPS KW - Depth profiling KW - Silanes KW - Monolayer KW - Amines KW - Amides PY - 2016 U6 - https://doi.org/10.1016/j.apsusc.2015.12.052 SN - 0169-4332 SN - 1873-5584 VL - 363 SP - 406 EP - 411 PB - Elsevier B.V. CY - Amsterdam AN - OPUS4-35262 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -