TY - JOUR A1 - Jeschke, H.O. A1 - Garcia, M.E. A1 - Lenzner, Matthias A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Kautek, Wolfgang T1 - Laser ablation thresholds of silicon for different pulse durations: theory and experiment N2 - The ultrafast laser ablation of silicon has been investigated experimentally and theoretically. The theoretical description is based on molecular dynamics (MD) simulations combined with a microscopic electronic model. We determine the thresholds of melting and ablation for two different pulse durations =20 and 500 fs. Experiments have been performed using 100 Ti:Sap-phire laser pulses per spot in air environment. The ablation thresholds were determined for pulses with a duration of 25 and 400 fs, respectively. Good agreement is obtained between theory and experiment. KW - Laser ablation KW - Pulse duration KW - Threshold of silicon PY - 2002 U6 - https://doi.org/10.1016/S0169-4332(02)00458-0 SN - 0169-4332 SN - 1873-5584 VL - 197-198 SP - 839 EP - 844 PB - North-Holland CY - Amsterdam AN - OPUS4-6314 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -