TY - JOUR A1 - Duwe, M. A1 - Quast, J.-H. A1 - Schneider, S. A1 - Fischer, Daniel A1 - Beck, Uwe T1 - Thin-film metrology of tilted and curved surfaces by imaging Mueller-matrix ellipsometry N2 - For the vast majority of ellipsometric measurements, the application of planar substrates is mandatory and requires a proper sample alignment prior to the measurement. Here, the authors present a generalized approach of how to extract the isotropic ellipsometric sample parameters from an imaging Mueller-matrix measurement even if the sample is significantly misaligned. They validate the method by layer-thickness calculations based on imaging Mueller-matrix measurements of flat crystalline silicon samples that were misaligned on purpose. Furthermore, they also exploit this method’s capabilities to perform spatially resolved layer-thickness measurements of a single-layer indium-tin-oxide coating on a fused-silica microlens without the need of realignment or repositioning of the sample during the measurement. T2 - 8th International conference on spectroscopic ellipsometry (ICSE-8) CY - Barcelona, Spain DA - 26.05.2019 KW - Metrology KW - Thin films KW - Polarization spectroscopy KW - Spectroskopic Imaging KW - Mueller-Matrix imaging ellipsometry PY - 2019 U6 - https://doi.org/10.1116/1.5122757 SN - 2166-2746 SN - 2327-9877 VL - 37 IS - 6 SP - 062908 PB - AIP CY - New York, NY AN - OPUS4-50209 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Fischer, Daniel A1 - Griepentrog, Michael A1 - Beck, Uwe A1 - Duwe, M. A1 - Quast, J.-H. A1 - Schneider, S. T1 - Effect of curvature of spherical microscopic indentations on the ellipsometric readout N2 - The authors describe and interpret curvature-related changes to the ellipsometric readout. As model system for a concave curvature, a set of three spherical microscopic indents in silicon (100) of different sizes was prepared by instrumented indentation testing using a spherical indenter. For reference, these samples were characterized by AFM to reveal the topography of each structure. The concavelike indents were analyzed by Mueller-Matrix imaging ellipsometry to extract lateral intensity images of 12 elements of the Mueller-Matrix. As a result of the detailed analysis of the image elements m22, m23, and m14, it was possible to correlate intensity changes and symmetry properties to depolarization and cross polarization induced by the edge threshold and the curved surface of the indent. KW - Spectroskopic Imaging KW - Mueller-Matrix imaging ellipsometry KW - Structural anomalies KW - Structural inhomogenities PY - 2019 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:b43-498105 VL - 37 IS - 6 SP - 062906-1 EP - 062906-5 PB - American Vacuum Society AN - OPUS4-49810 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Florian, Camilo A1 - Fischer, Daniel A1 - Freiberg, K. A1 - Duwe, M. A1 - Sahre, Mario A1 - Schneider, S. A1 - Hertwig, Andreas A1 - Krüger, Jörg A1 - Rettenmayr, M. A1 - Beck, Uwe A1 - Undisz, A. A1 - Bonse, Jörn T1 - Single Femtosecond Laser-Pulse-Induced Superficial Amorphization and Re-Crystallization of Silicon N2 - Superficial amorphization and re-crystallization of silicon in <111> and <100> orientation after irradiation by femtosecond laser pulses (790 nm, 30 fs) are studied using optical imaging and transmission electron microscopy. Spectroscopic imaging ellipsometry (SIE) allows fast data acquisition at multiple wavelengths and provides experimental data for calculating nanometric amorphous layer thickness profiles with micrometric lateral resolution based on a thin-film layer model. For a radially Gaussian laser beam and at moderate peak fluences above the melting and below the ablation thresholds, laterally parabolic amorphous layer profiles with maximum thicknesses of several tens of nanometers were quantitatively attained. The accuracy of the calculations is verified experimentally by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (STEM-EDX). Along with topographic information obtained by atomic force microscopy (AFM), a comprehensive picture of the superficial re-solidification of silicon after local melting by femtosecond laser pulses is drawn. KW - Femtosecond laser KW - Silicon KW - Amorphization KW - Crystallization KW - Spectroscopic imaging ellipsometry PY - 2021 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:b43-523687 UR - https://www.mdpi.com/1996-1944/14/7/1651 SN - 1996-1944 VL - 14 IS - 7 SP - 1651-1 EP - 1651-21 PB - MDPI AG CY - Basel, Switzerland AN - OPUS4-52368 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -