TY - JOUR A1 - Abou-Ras, D. A1 - Caballero, R. A1 - Fischer, C.-H. A1 - Kaufmann, C.A. A1 - Lauermann, I. A1 - Mainz, R. A1 - Mönig, H. A1 - Schöpke, A. A1 - Stephan, C. A1 - Streeck, C. A1 - Schorr, S. A1 - Eicke, A. A1 - Döbeli, M. A1 - Gade, B. A1 - Hinrichs, J. A1 - Nunney, T. A1 - Dijkstra, H. A1 - Hoffmann, V. A1 - Klemm, D. A1 - Efimova, V. A1 - Bergmaier, A. A1 - Dollinger, G. A1 - Wirth, Thomas A1 - Unger, Wolfgang A1 - Rockett, A.A. A1 - Perez-Rodriguez, A. A1 - Alvarez-Garcia, J. A1 - Izquierdo-Roca, V. A1 - Schmid, T. A1 - Choi, P.-P. A1 - Müller, M. A1 - Bertram, F. A1 - Christen, J. A1 - Khatri, H. A1 - Collins, R.W. A1 - Marsillac, S. A1 - Kötschau, I. T1 - Comprehensive comparison of various techniques for the analysis of elemental distributions in thin films N2 - The present work shows results on elemental distribution analyses in Cu(In,Ga)Se2 thin films for solar cells performed by use of wavelength-dispersive and energy-dispersive X-ray spectrometry (EDX) in a scanning electron microscope, EDX in a transmission electron microscope, X-ray photoelectron, angle-dependent soft X-ray emission, secondary ion-mass (SIMS), time-of-flight SIMS, sputtered neutral mass, glow-discharge optical emission and glow-discharge mass, Auger electron, and Rutherford backscattering spectrometry, by use of scanning Auger electron microscopy, Raman depth profiling, and Raman mapping, as well as by use of elastic recoil detection analysis, grazing-incidence X-ray and electron backscatter diffraction, and grazing-incidence X-ray fluorescence analysis. The Cu(In,Ga)Se2 thin films used for the present comparison were produced during the same identical deposition run and exhibit thicknesses of about 2 µm. The analysis techniques were compared with respect to their spatial and depth resolutions, measuring speeds, availabilities, and detection limits. KW - Elemental distributions KW - Comparison KW - Depth profiling KW - Chemical mapping KW - Thin films KW - Solar cells KW - Chalcopyrite-type KW - Cu(In,Ga)Se2 PY - 2011 U6 - https://doi.org/10.1017/S1431927611000523 SN - 1431-9276 SN - 1435-8115 VL - 17 IS - 5 SP - 728 EP - 751 PB - Cambridge University Press CY - New York, NY AN - OPUS4-24506 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Allsop, N. A. A1 - Schönmann, A. A1 - Belaidi, A. A1 - Muffler, H.-J. A1 - Mertesacker, B. A1 - Bohne, W. A1 - Strub, Erik A1 - Röhrich, J. A1 - Lux-Steiner, M. C. A1 - Fischer, C.-H. T1 - Indium sulfide thin films deposited by the spray ion layer gas reaction technique N2 - The Spray Ion Layer Gas Reaction (Spray-ILGAR) technique is a new variation on the ILGAR technique used to prepare chalcogenide thin films. High quality indium sulfide thin films were produced by Spray-ILGAR with an indirect bandgap of 2.2 eV and a high suitability for use as buffer layers in chalcopyrite solar cells. The process involves the cyclical spray deposition of an indium containing precursor layer followed by its conversion to sulfide using hydrogen sulfide gas. Analysis of the deposition reveals that the indium chloride based precursor is transported via the vapour phase from the spray droplets to the substrate surface. KW - Spray deposition KW - Indium sulfide KW - Ion layer gas reaction KW - ILGAR KW - X-ray diffraction KW - X-ray fluorescence KW - Deposition process PY - 2006 U6 - https://doi.org/10.1016/j.tsf.2006.01.019 SN - 0040-6090 VL - 513 IS - 1-2 SP - 52 EP - 56 PB - Elsevier CY - Amsterdam AN - OPUS4-14267 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -