TY - CONF A1 - Andree, Stefan A1 - Heidmann, B. A1 - Ringleb, F. A1 - Eylers, K. A1 - Bonse, Jörn A1 - Boeck, T. A1 - Schmid, M. A1 - Krüger, Jörg T1 - Femtosecond laser pulses for photovoltaic bottom-up strategies N2 - A promising technology in photovoltaics is based on micro-concentrator solar cells, where the photovoltaic active area is realized as an array of sub-millimeter sized cells onto which the incident light is focused via microlenses. This approach allows to increase the cell efficiency and to realize much more compact modules compared to macroscopic concentrator devices. At the same time, expensive raw materials can be saved, which is of interest, for example, with respect to indium in the case of copper-indium-gallium-diselenide (CIGSe) thin film solar cells. Two methods to produce micro-sized precursors of CIGSe absorbers on molybdenum are presented using 30-fs laser pulses at 790 nm wavelength. On the one hand, a multi pulse surface structuring of the molybdenum film or the underlying glass substrate and a subsequent physical vapor deposition were used for a site-selective aggregation of indium droplets. On the other hand, a single pulse laser-induced forward transfer was utilized to selectively deposit combined copper-indium precursor pixels on the molybdenum back contact of the solar cell. Post-processing (selenization, isolation, contacting) of the laser-generated micro-sized precursors results in functional CIGSe solar cells. T2 - 10. Mittweidaer Lasertagung CY - Mittweida, Germany DA - 16.11.2017 KW - Copper indium gallium diselenide (CIGSe) KW - Micro solar cell KW - Femtosecond laser KW - Laser ablation KW - Laser-induced forward transfer (LIFT) PY - 2017 SN - 1437-7624 VL - 2 SP - 1 EP - 4 PB - Hochschule Mittweida CY - Mittweida AN - OPUS4-42988 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Kirner, Sabrina V. A1 - Höhm, S. A1 - Epperlein, Nadja A1 - Spaltmann, Dirk A1 - Rosenfeld, A. A1 - Krüger, Jörg T1 - Applications of laser-induced periodic surface structures (LIPSS) N2 - Laser-induced periodic surface structures (LIPSS, ripples) are a universal phenomenon that can be observed on almost any material after the irradiation by linearly polarized laser beams, particularly when using ultrashort laser pulses with durations in the picosecond to femtosecond range. During the past few years significantly increasing research activities have been reported in the field of LIPSS, since their generation in a single-step process provides a simple way of nanostructuring and surface functionalization towards the control of optical, mechanical or chemical properties. In this contribution current applications of LIPSS are reviewed, including the colorization of technical surfaces, the control of surface wetting, the tailoring of surface colonization by bacterial biofilms, and the improvement of the tribological performance of nanostructured metal surfaces. T2 - SPIE Photonics West Conference, Laser-based Micro- and Nanoprocessing XI CY - San Francisco, USA DA - 27.01.2017 KW - Laser-induced periodic surface structures (LIPSS) KW - Laser processing KW - Surface functionalization KW - Application PY - 2017 SN - 978-1-5106-0625-8 SN - 978-1-5106-0626-5 U6 - https://doi.org/10.1117/12.2250919 SN - 0277-786X SN - 1996-756X VL - 10092 SP - Article UNSP 100920N, 100920N-1 EP - 100920N-9 PB - SPIE CY - Bellingham, USA AN - OPUS4-39305 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Höhm, S. A1 - Kirner, Sabrina A1 - Rosenfeld, A. A1 - Krüger, Jörg T1 - Laser-induced periodic surface structures (LIPSS) - A scientific evergreen N2 - The current state in the field of laser-induced periodic surface structures (LIPSS, ripples) is reviewed. Their formation mechanisms are analyzed in ultrafast experiments (time-resolved diffraction and polarization controlled double-pulse experiments) and technological applications are demonstrated. T2 - Conference on Lasers and Electro-Optics (CLEO) - Science and Innovations 2016 CY - San Jose, CA, USA DA - 05.06.2016 KW - Laser materials processing KW - Optics at surfaces KW - Ultrafast phenomena KW - Laser-induced periodic surface strcutures (LIPSS) KW - Femtosecond laser ablation PY - 2016 SN - 978-1-943580-11-8 U6 - https://doi.org/10.1364/CLEO_SI.2016.STh1Q.3 SP - STh1Q.3, 1 EP - 2 PB - Optical Society of America AN - OPUS4-37072 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Seuthe, T. A1 - Grehn, M. A1 - Mermillod-Blondin, A. A1 - Bonse, Jörn A1 - Eberstein, M. T1 - Requirements on glasses for femtosecond-laser based micro-structuring N2 - In this work, glasses with systematically varied compositions were manufactured and irradiated by single Ti:sapphire fs-laserpulses (800 nm, 120 fs), focused at the surface and into the bulk of the glass materials. The samples were tested for their ablation threshold fluence as well as for structural changes using µ-Raman-spectroscopy. Correlations between the glass composition, the material-ablation on the glass surface and the permanent changes of the refractive index inside the glass volume after the irradiation by fs-laser pulses were obtained. The results show, that the structural modifications found at the surface of the glasses and inside its volume are closely related. However, while the ablation threshold fluence of the glass surface primarily depends on the glass dissociation energy, the permanent refractive index change inside the volume is rather determined by its ability for absorbing the fs-laser pulses and the subsequent relaxation processes. The results of this work provide some guidance on how the glass composition can be varied in order to optimize the fs-laser induced modification of dielectrics. T2 - 11th International Conference on Ceramic Interconnect & Ceramic Microsystems Technologies CY - Dresden, Germany DA - 20.04.2015 PY - 2015 SN - 978-1-5108-0456-2 U6 - https://doi.org/10.4071/CICMT-TA24 SP - 47 EP - 53 PB - Curran CY - Red Hook, NY, USA AN - OPUS4-34755 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Mermillod-Blondin, A. A1 - Seuthe, T. A1 - Eberstein, M. A1 - Grehn, M. A1 - Bonse, Jörn A1 - Rosenfeld, A. ED - Gorecki, C. ED - Asundi, A. K. ED - Osten, W. T1 - Quantitative estimate of fs-laser induced refractive index changes in the bulk of various transparent materials N2 - Over the past years, many applications based on laser-induced refractive index changes in the volume of transparent materials have been demonstrated. Ultrashort pulse lasers offer the possibility to process bulky transparent materials in three dimensions, suggesting that direct laser writing will play a decisive role in the development of integrated micro-optics. At the present time, applications such as 3D long term data storage or embedded laser marking are already into the phase of industrial development. However, a quantitative estimate of the laser-induced refractive index change is still very challenging to obtain. On another hand, several microscopy techniques have been recently developed to characterize bulk refractive index changes in-situ. They have been mostly applied to biological purposes. Among those, spatial light interference microscopy (SLIM), offers a very good robustness with minimal post acquisition data processing. In this paper, we report on using SLIM to measure fs-laser induced refractive index changes in different common glassy materials, such as fused silica and borofloat glass (B33). The advantages of SLIM over classical phase-contrast microscopy are discussed. T2 - Optical Micro- and Nanometrology V CY - Brussels, Belgium DA - 14.04.2014 KW - Laser material processing KW - Quantitative phase-contrast microscopy KW - Spatial light interference microscopy KW - Nanometrology PY - 2014 U6 - https://doi.org/10.1117/12.2051590 VL - 9132 SP - Artikel 91320X, 1 EP - 6 AN - OPUS4-30638 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Seuthe, T. A1 - Grehn, M. A1 - Mermillod-Blondin, A. A1 - Bonse, Jörn A1 - Eberstein, M. T1 - Compositional dependent response of silica-based glasses after femtosecond laser pulse irradiation N2 - Femtosecond laser pulse irradiation of inorganic glasses allows a selective modification of the optical properties with very high precision. This results in the possibility for the production of three-dimensional functional optical elements in the interior of glass materials, such as optical data storage, waveguide writing, etc. The influence of the chemical glass composition to the response upon ultrashort laser irradiation has not been studied systematically. For that, simple silicabased model glasses composed of systematically varying alkaline- and earth-alkaline components were prepared, irradiated on the surface and in the volume with single fs-laser pulses (~130 fs, 800 nm), and were subsequently analyzed by means of micro-Raman spectroscopy and quantitative phase contrast microscopy in order to account for changes in the glass structure and for alterations of the optical refractive index, respectively. The Raman spectroscopic studies of the laser-irradiated spots revealed no change in the average binding configuration (the so called Q-structure), but local changes of bond-angles and bond-lengths within the glass structure structure. Those changes are explained by structural relaxation of the glass network due to densification caused by a transient laser-induced plasma generation and the following shock wave and other thermal phenomena. Glasses with a low amount of network modifiers show changes in the Si-O network while glasses with a high amount of network modifiers react primarily via variation of the nonbridging oxygen ions. The results are discussed in terms of possible structural response mechanisms and conclusions are outlined regarding glass compositions with technical suitability for fs-laser modifications. T2 - Laser-induced damage in optical materials CY - Boulder, Colorado, USA DA - 2013-09-22 KW - Femtosecond laser modifications KW - Raman spectroscopy KW - Glass KW - Femtosecond phenomena KW - Networks KW - Silica KW - Laser irradiation KW - Lasers KW - Micro raman spectroscopy KW - Microscopy KW - Optical components KW - Optical storage PY - 2013 U6 - https://doi.org/10.1117/12.2028713 N1 - Serientitel: SPIE proceedings series – Series title: SPIE proceedings series VL - 8885 SP - 1 EP - 8(?) AN - OPUS4-29539 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Grehn, M. A1 - Tsai, W.J. A1 - Höfner, M. A1 - Seuthe, T. A1 - Bonse, Jörn A1 - Mermillod-Blondin, A. A1 - Rosenfeld, A. A1 - Hennig, J. A1 - Achtstein, A. W. A1 - Theiss, C. A1 - Woggon, U. A1 - Eberstein, M. A1 - Eichler, H.J. T1 - Nonlinear optical properties of binary and ternary silicate glasses upon near-infrared femtosecond pulse laser irradiation N2 - Some nonlinear optical properties such as the nonlinear refractive index and the nonlinear effective absorption, as well as the laser-induced single-pulse ablation threshold are characterized for a series of binary and ternary silicate glasses upon irradiation with near-infrared femtosecond laser pulses (800 nm, 130 fs). The laser-induced ablation threshold varies from 2.3 J/cm² in case of potassium silicate glass up to 4.3 J/cm² in case of Fused Silica. Nonlinear refractive indices are qualitatively similar within the range 1.7-2.7×10-16 cm²/W. Complementary optical and physico-chemical properties like band gap energy and the glass transformation temperature have been measured for all the glasses. T2 - International symposium on high power laser ablation 2012 CY - Santa Fe, NM, USA DA - 30.04.2012 KW - Laser-induced damage threshold KW - Laser ablation KW - Nonlinear refractive index KW - Silicate glass systems KW - Glass transformation temperature KW - Coefficient of thermal expansion PY - 2012 SN - 978-0-7354-1068-8 U6 - https://doi.org/10.1063/1.4739918 N1 - Serientitel: AIP conference proceedings – Series title: AIP conference proceedings VL - 1464 SP - 660 EP - 670 AN - OPUS4-26318 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Schultz, C. A1 - Schüle, M. A1 - Stelmaszczyk, K. A1 - Bonse, Jörn A1 - Witteck, R. A1 - Weizman, M. A1 - Rhein, H. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Stegemann, B. A1 - Fink, F. T1 - Film side laser patterning of molybdenum thin films sputter-deposited onto glass N2 - Serial interconnection of CIGSe thin film solar modules involves typically glass-side laser patterning of the molybdenum layer (P1 scribe). In this paper we present a working principle of P1 film side patterning. The investigated samples were sputter-deposited onto soda-lime glass substrates. For understanding the fundamental ablation behavior, two kinds of layer systems were studied: on the one hand monolayer systems which are compressively stressed and on the other hand bilayer systems, consisting of a tensile stressed layer on the substrate and a second layer on top. The film-side ablation process was studied using a nanosecond as well as a picosecond laser source. The influence of intrinsic stress was studied by XRD. Time resolved spectroscopy reveals the formation of plasma as important driving mechanism for ablation. It is shown that by proper adaption of the sputter conditions high-quality P1 film side patterning is achieved. T2 - 27th European photovoltaic solar energy conference and exhibition CY - Frankfurt, Germany DA - 24.09.2012 KW - Laser processing KW - Molybdenum KW - Strain KW - Ablation KW - Sputter deposition KW - Cu(InGa)Se2 PY - 2012 SN - 3-936338-28-0 U6 - https://doi.org/10.4229/27thEUPVSEC2012-3CV.1.6 SP - 2266 EP - 2272 AN - OPUS4-27208 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Geier, M. A1 - Eberstein, M. A1 - Grießmann, H. A1 - Partsch, U. A1 - Völkel, L. A1 - Böhme, R. A1 - Mann, Guido A1 - Bonse, Jörn A1 - Krüger, Jörg T1 - Impact of laser treatment on phosphoric acid coated multicrystalline silicon PV-wafers N2 - The selective emitter is a well-known technology for producing highly doped areas under the metallization grid to improve the solar cell performance. In this work, the influence of laser irradiation on phosphoric acid coated multicrystalline silicon PV-wafers on the wafer surface structure, the phosphorous depth distribution and the electrical contact resistance within the laser treated area as well as the electrical series resistance of laserprocessed solar cells was evaluated. Different laser processing settings were tested including pulsed and continuous wave (cw) laser sources (515 nm, 532 nm, 1064 nm wavelength). Complementary numerical simulations using the finite element method (FEM) were conducted to explain the impact of the laser parameters on the melting behavior (melt duration and geometry). It was found that the melt duration is a key parameter for a successful laser Doping process. Our simulations at a laser wavelengths of 515 nm reveal that low-repetition rate (<500 kHz) laser pulses of 300 ns duration generate a melt duration of ~0.35 µs, whereas upon scanning cw-laser radiation at 532 nm prolongates the melt duration by at least one order of magnitude. Experimentally, the widely used ns-laser pulses did not lead to satisfying laser irradiation results. In contrast, cw-laser radiation and scan velocities of less than 2 m/s led to suitable laser doping featuring low electrical resistances in the laser treated areas. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.2011 KW - Silicon solar cell KW - Selective emitter KW - Laser processing KW - Doping KW - Simulation PY - 2011 SN - 3-936338-27-2 U6 - https://doi.org/10.4229/26thEUPVSEC2011-2BV.1.7 SP - 1243 EP - 1247 AN - OPUS4-24995 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Eberstein, M. A1 - Geier, M. A1 - Grießmann, H. A1 - Partsch, U. A1 - Voelkel, L. A1 - Böhme, R. A1 - Pentzien, Simone A1 - Koter, Robert A1 - Mann, Guido A1 - Bonse, Jörn A1 - Krüger, Jörg T1 - Towards an industrial laser doping process for the selective emitter using phosphoric acid as dopant N2 - Different laser supported approaches have already been realized, proving the great potential of laserdoped selective emitters (LDSE). However, it is challenging to establish a low-cost process by using pulsed laser tools. So far a single-step process only leads to satisfying results utilizing cw-lasers. In this paper we have examined a two-step process to produce laser-doped selective emitters on multicrystalline textured standard silicon photovoltaic wafers (90-Ω/sq-Emitter, SiN-antireflection coating (ARC)). The precise ARC removal by near-infrared fs-laser pulses (30 fs, 800 nm), and the doping of uncoated silicon wafers by ns-laser pulses (8 ns, 532 nm) were systematically investigated. In the fs-experiment, optimum conditions for ARC removal were identified. In the nsexperiments under suitable conditions (melting regime), the phosphorous concentration underneath the wafer surface was significantly increased and the sheet resistance was reduced by nearly a factor of two. Moreover, electrical measurements on fired metallization fingers deposited on the laser processed wafers showed low contact resistances. Hence, wafer conditioning with combined fs-laser- and ns-laser-processes are expected to be a promising technology for producing selective emitters. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.2011 KW - Laser processing KW - Doping KW - Selective emitter KW - Multicrystalline silicon PY - 2011 SN - 3-936338-27-2 U6 - https://doi.org/10.4229/26thEUPVSEC2011-2BV.1.2 SP - 1220 EP - 1223 AN - OPUS4-24996 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -