TY - GEN A1 - Bonse, Jörn A1 - Baudach, Steffen A1 - Krüger, Jörg A1 - Kautek, Wolfgang ED - Phipps, C. T1 - Femtosecond laser micromachining of technical materials N2 - Micromachining experiments were performed with Ti:sapphire laser pulses (130 fs - 150 fs, 800 nm, approximately 10 Hz) in air. Employing the direct focusing technique, highly absorbing titanium nitride (TiN) and weakly absorbing polyimide (PI) and polymethylmethacrylate (PMMA) served as target materials. The lateral and vertical precision of the laser ablation and morphological features were characterized by scanning force (SFM), scanning electron (SEM) and optical microscopy. For TiN, incubation can be observed, i.e. the single-pulse surface damage threshold (0.26 J/cm2) is by a factor of two greater than the threshold for 100 pulses. Ablation rates below 10 nm per pulse can be achieved. The evolution of sub-wavelength ripples is presented in dependence on pulse number and laser fluence, respectively. The incubation behavior of the polymers can be described by an accumulation model as for TiN. Experiments on PI with varying focal lengths result in the same modification thresholds. Different polarization states of light (linear, circular) lead to a variation of the ablation rate and to various morphological patterns in the ablation craters (wavelength ripples, cones). Swelling of PMMA occurred at fluences below the ablation threshold. T2 - 3rd SPIE's International Conference on High-Power Laser Ablation CY - Santa Fe, NM, USA DA - 24.04.2000 KW - Ablation KW - Femtosecond pulse laser KW - Laser processing KW - Micromachining KW - Polymer KW - Titanium nitride KW - Ripples PY - 2000 SN - 0-8194-3700-X U6 - https://doi.org/10.1117/12.407346 SN - 1605-7422 N1 - Serientitel: SPIE proceedings series – Series title: SPIE proceedings series IS - 4065 SP - 161 EP - 172 PB - SPIE CY - Bellingham, Wash. AN - OPUS4-967 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Kautek, Wolfgang A1 - Wrobel, J. M. T1 - Femtosecond pulse laser machining of InP wafers N2 - Ablation of indium phosphide wafers in air was performed with 130 fs laser pulses at a wavelength of 800 nm at a low repetition rate of 10 Hz. In order to evaluate the role of the incubation effects, the relationship between the number of laser pulses used for the ablation and the threshold fluence was studied. Particular attention was paid to the chemical composition, surface morphology and structural variations of the ablated area. T2 - 5th Laser Applications in Microelectronics and Optoelectronics Manufacturing Conference (LAMOM) CY - San José, CA, USA DA - 240.01.2000 KW - Femtosecond laser ablation KW - Indium phosphide KW - Auger electron spectroscopy PY - 2000 SN - 0-8194-3550-3 SN - 1605-7422 N1 - Serientitel: SPIE proceedings series – Series title: SPIE proceedings series IS - 3933 SP - 280 EP - 287 PB - SPIE CY - Bellingham, Wash. AN - OPUS4-937 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Krüger, Jörg A1 - Bonse, Jörn A1 - Baudach, Steffen A1 - Kautek, Wolfgang A1 - Lenzner, M. A1 - Wrobel, J. M. T1 - Femtosecond-Pulse Laser Machining of Semiconducting Materials N2 - Summary form only given. Machining investigations of crystalline silicon have been performed with laser pulses at a wavelength of 780 nm in the range between 5 fs and 400 fs. Applying 100 pulses per spot, surface damage thresholds were determined by the measurement of the damage diameter. In this pulse duration regime, the threshold fluences were nearly constant. Single-pulse investigations with 5 fs pulses yielded a value of about 0.15 J cm-2 identical to the multi-pulse experiment. This is in contradiction to the behaviour of dielectrics where incubation effects alter the optical properties down to the 5 fs pulse regime. Employing laser pulses with a duration of 130 fs at a wavelength of 800 nm, single-pulse ablation thresholds of 0.23 J cm-2 and 0.16 J cm-2 were determined for Si and InP in air, respectively. The threshold fluence was calculated from the linear relation between the square of the diameters versus the logarithm of the laser fluences. T2 - CLEO/Europe 2000 ; Conference on Lasers and Electro-Optics Europe ; Conférence Européenne sur les Lasers et l'Electro-Optique ; CLEO/Europe-IQEC CY - Nice, France DA - 2000-09-10 PY - 2000 SN - 0-7803-6319-1 U6 - https://doi.org/10.1109/CLEOE.2000.910410 PB - IEEE Service Center CY - Piscataway, NJ AN - OPUS4-958 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Rudolph, Pascale A1 - Krüger, Jörg A1 - Baudach, Steffen A1 - Kautek, Wolfgang T1 - Femtosecond pulse laser processing of TiN on silicon N2 - Ultrashort pulse laser microstructuring (pulse duration 130 fs, wavelength 800 nm, repetition rate 2 Hz) of titanium nitride (TiN) films on silicon substrates was performed in air using the direct focusing technique. The lateral and vertical precision of laser ablation was evaluated. The TiN ablation threshold changed with the number of pulses applied to the surface due to an incubation effect. An ablation depth per pulse below the penetration depth of light was observed. Columnar structures were formed in the silicon substrate after drilling through the TiN layer. KW - Femtosecond laser ablation KW - Titanium nitride KW - Silicon KW - Optical properties PY - 2000 U6 - https://doi.org/10.1016/S0169-4332(99)00481-X SN - 0169-4332 SN - 1873-5584 VL - 154-155 SP - 659 EP - 663 PB - North-Holland CY - Amsterdam AN - OPUS4-802 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Baudach, Steffen A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Kautek, Wolfgang T1 - Ultrashort pulse laser ablation of polycarbonate and polymethylmethacrylate N2 - Ablation experiments with ultrashort laser pulses (pulse duration 150 fs, wavelength 800 nm) on polymers (PC, PMMA) relevant for biomedical technology have been performed in air. The lateral and vertical machining precision was evaluated by optical, atomic force and scanning electron microscopy. The ablation threshold reaches values in the range of 0.5–2.5 J/cm2 and depends significantly on the number of laser pulses applied to the same spot. The hole diameters are influenced by the laser fluence and the number of laser pulses. The relation between the ablation threshold and the number of laser pulses applied to the same spot is described in accordance with an incubation model. KW - Femtosecond laser ablation KW - Polymer KW - Polycarbonate KW - Polymethylmethacrylate PY - 2000 U6 - https://doi.org/10.1016/S0169-4332(99)00474-2 SN - 0169-4332 SN - 1873-5584 VL - 154-155 SP - 555 EP - 560 PB - North-Holland CY - Amsterdam AN - OPUS4-803 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Wrobel, Jerzy A1 - Krüger, Jörg A1 - Kautek, Wolfgang T1 - Ultrashort-pulse laser ablation of indium phosphide in air N2 - Ablation of indium phosphide wafers in air was performed with low repetition rate ultrashort laser pulses (130 fs, 10 Hz) of 800 nm wavelength. The relationships between the dimensions of the craters and the ablation parameters were analyzed. The ablation threshold fluence depends on the number of pulses applied to the same spot. The single-pulse ablation threshold value was estimated to be fth(1)=0.16 J/cm2. The dependence of the threshold fluence on the number of laser pulses indicates an incubation effect. Morphological and chemical changes of the ablated regions were characterized by means of scanning electron microscopy and Auger electron spectroscopy. PY - 2001 U6 - https://doi.org/10.1007/s003390000596 SN - 0947-8396 VL - 72 IS - 1 SP - 89 EP - 94 PB - Springer CY - Berlin AN - OPUS4-1068 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Rudolph, Pascale A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Kautek, Wolfgang T1 - Femtosecond- and nanosecond-pulse laser ablation of bariumalumoborosilicate glass N2 - Laser ablation with femtosecond pulses (130 fs, wavelength 800 nm, repetition rate 2 Hz) was compared with nanosecond-pulse ablation (10 ns, wavelength 266 nm, repetition rate 2.5 Hz) of bariumalumoborosilicate glass in air using the direct focusing technique. Different ablation thresholds and heat-affected zones were observed. The lateral and vertical machining precision was evaluated. Single nanosecond laser pulses in the far UV resulted in a bubble or a circular hole in the centre of the illuminated spot, depending on the applied fluence. The ablation behaviour in the case of near-IR femtosecond pulses contrasted to this. Bubble formation was not detected. It needed repeated pulses at the same spot to modify the surface until material removal could be observed (incubation). Cavity dimensions of less than the beam diameter were achieved in this case. T2 - 5th International Conference on Laser Ablation ; COLA '99 CY - Göttingen, Germany DA - 1998-07-19 KW - Laser ablation KW - Bariumalumoborosilicate glass PY - 1999 U6 - https://doi.org/10.1007/s003390051524 SN - 0947-8396 VL - 69 IS - 7 SP - S763 EP - S766 PB - Springer CY - Berlin AN - OPUS4-801 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Krüger, Jörg A1 - Bonse, Jörn A1 - Lenzner, Matthias T1 - Modification and Ablation of Semiconductors by Femtosecond Laser Pulses N2 - Physical and chemical phenomena resulting from irradiation of silicon and indium phosphide with ultrashort laser pulses (~100fs) were investigated with respect to the difference between single- and multiple-pulse treatment. In the single-pulse case, several processes were identified: modification, recrystallization and ablation. All processes exhibit a distinct treshold behaviour. A two photon-absorption coefficient can be determined from a single spatial ablation profile. Accumulation effects were observed for multi-pulse illumination. Different morphological features like bubbles, rippels and microcolumns were found. PY - 2002 VL - 5 IS - 2 SP - 437 EP - 461 PB - Transworld Research Network CY - Trivandrum AN - OPUS4-1585 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Baudach, Steffen A1 - Kautek, Wolfgang A1 - Krüger, Jörg A1 - Welsch, E. T1 - Femtosecond laser damage of a high reflecting mirror N2 - Multiple pulse investigations of 130-fs Ti:sapphire laser-induced damage of a high reflecting mirror consisting of alternating ?/4-layers of Ta2O5 and SiO2 and a single 500-nm Ta2O5 film were performed. In both cases, fused silica served as the substrate. For a fixed number of 1000 laser pulses per spot, a decrease in the damage threshold fluence of the mirror by a factor of two was observed by changing the repetition rate from 10 Hz to 1 kHz. A single 500-nm Ta2O5 film shows higher damage resistance compared to the mirror. The mirror and the Ta2O5 film samples were partially coated with a 300-nm-thick aluminium layer. The aluminium coating does not influence the damage threshold of the dielectrics underneath. KW - Aluminium KW - Laser ablation KW - Optical coatings KW - Silicon oxide PY - 2002 U6 - https://doi.org/10.1016/S0040-6090(02)00074-3 SN - 0040-6090 IS - 408 SP - 297 EP - 301 PB - Elsevier CY - Amsterdam AN - OPUS4-1382 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Bonse, Jörn A1 - Baudach, Steffen A1 - Krüger, Jörg A1 - Kautek, Wolfgang ED - Exarhos, G. T1 - Femtosecond laser damage in dielectric coatings N2 - Multi-shot investigations of Ti:sapphire laser (wavelength (lambda) approximately equals 800 nm) induced damage were performed in three different laboratories (BAM, Berlin; LZH, Hannover; UNM, Albuquerque). The ablation behavior of a high reflecting mirror consisting of alternating (lambda) /4- layers of Ta2O5 and SiO2 was studied. Fused silica served as substrate. The influence of the pulse duration ((tau) equals 13 - 130 fs), the pulse number (30 - (infinity) ) and the repetition rate (10 Hz - 100 MHz) on the damage threshold will be discussed. T2 - 32nd Annual Boulder Damage Symposium CY - Boulder, CO, USA DA - 2000-10-16 PY - 2001 SN - 0-8194-4036-1 U6 - https://doi.org/10.1117/12.425056 SN - 1605-7422 N1 - Serientitel: SPIE proceedings series – Series title: SPIE proceedings series IS - 4347 SP - 24 EP - 34 PB - International Society for Optical Engineering (SPIE) CY - Bellingham, Wash. AN - OPUS4-6013 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Höhm, S. A1 - Rosenfeld, A. T1 - Femtosecond laser-induced periodic surface structures N2 - The formation of laser-induced periodic surface structures (LIPSS) in different materials (metals, semiconductors, and dielectrics) upon irradiation with linearly polarized fs-laser pulses (τ~30–150 fs, λ~800 nm) in air environment is studied experimentally and theoretically. In metals, predominantly low-spatial-frequency-LIPSS with periods close to the laser wavelength λ are observed perpendicular to the polarization. Under specific irradiation conditions, high-spatial-frequency-LIPSS with sub-100-nm spatial periods (~λ/10) can be generated. For semiconductors, the impact of transient changes of the optical properties to the LIPSS periods is analyzed theoretically and experimentally. In dielectrics, the importance of transient excitation stages in the LIPSS formation is demonstrated experimentally using (multiple) double-fs-laser-pulse irradiation sequences. A characteristic decrease of the LIPSS periods is observed for double-pulse delays of less than 2 ps. KW - Laser-induced periodic surface structures (LIPSS) KW - Femtosecond laser ablation KW - Ultrafast optical techniques KW - Silicon KW - Titanium KW - Silica PY - 2012 U6 - https://doi.org/10.2351/1.4712658 SN - 1042-346X SN - 1938-1387 VL - 24 IS - 4 SP - 042006-1 EP - 042006-7 PB - Laser Institute of America CY - Orlando, Fla., USA AN - OPUS4-26198 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Höhm, S. A1 - Rosenfeld, A. A1 - Krüger, Jörg A1 - Bonse, Jörn T1 - Femtosecond laser-induced periodic surface structures on silica N2 - The formation of laser-induced periodic surface structures (LIPSS) on two different silica polymorphs (single-crystalline synthetic quartz and commercial fused silica glass) upon irradiation in air with multiple linearly polarized single- and double-fs-laser pulse sequences (τ = 150 fs pulse duration, λ = 800nm center wavelength, temporal pulse separation Δt < 40 ps) is studied experimentally and theoretically. Two distinct types of fs-LIPSS [so-called low-spatial-frequency LIPSS (LSFL) and high-spatial-frequency LIPSS (HSFL)] with different spatial periods and orientations were identified. Their appearance was characterized with respect to the experimental parameters peak laser fluence and number of laser pulses per spot. Additionally, the 'dynamics' of the LIPSS formation was addressed in complementary double-fs-pulse experiments with varying delays, revealing a characteristic change of the LSFL periods. The experimental results are interpreted on the basis of a Sipe-Drude model considering the carrier dependence of the optical properties of fs-laser excited silica. This new approach provides an explanation of the LSFL orientation parallel to the laser beam polarisation in silica—as opposed to the behaviour of most other materials. KW - High-speed optical techniques KW - Laser beam effects KW - Refractive index KW - Silicon compounds KW - Surface structure PY - 2012 U6 - https://doi.org/10.1063/1.4730902 SN - 0021-8979 SN - 1089-7550 VL - 112 IS - 1 SP - 014901-1 - 014901-9 PB - American Institute of Physics CY - Melville, NY AN - OPUS4-26201 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Höhm, S. A1 - Rosenfeld, A. A1 - Krüger, Jörg A1 - Bonse, Jörn T1 - Area dependence of femtosecond laser-induced periodic surface structures for varying band gap materials after double pulse excitation N2 - The formation of laser-induced periodic surface structures upon irradiation of titanium, silicon, and fused silica with multiple irradiation sequences consisting of parallel polarized Ti:sapphire femtosecond laser pulse pairs (pulse duration 50–150 fs, central wavelength ~800 nm) is studied experimentally. The temporal delay between the individual near-equal energy fs-laser pulses was varied between 0 and 5 ps with a temporal resolution of better than 0.2 ps. The surface morphology of the irradiated surface areas is characterized by means of scanning electron microscopy (SEM). In all materials a decrease of the rippled surface area is observed for increasing delays. The characteristic delay decay scale is quantified and related to material dependent excitation and energy relaxation processes. KW - Laser-induced periodic surface structures (LIPSS) KW - Femtosecond laser ablation KW - Double-pulse experiments KW - Ultrafast optical techniques KW - Mach-Zehnder interferometer PY - 2013 U6 - https://doi.org/10.1016/j.apsusc.2012.10.188 SN - 0169-4332 SN - 1873-5584 VL - 278 SP - 7 EP - 12 PB - North-Holland CY - Amsterdam AN - OPUS4-28601 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Hertwig, Andreas A1 - Koter, Robert A1 - Weise, Matthias A1 - Beck, Uwe A1 - Reinstädt, Philipp A1 - Griepentrog, Michael A1 - Krüger, Jörg A1 - Picquart, M. A1 - Haro-Poniatowski, E. T1 - Femtosecond laser pulse irradiation effects on thin hydrogenated amorphous carbon layers N2 - The irradiation of ~0.9-µm-thick hydrogenated amorphous carbon (a-C:H) layers deposited on silicon substrates with single femtosecond (fs) laser pulses (35 fs pulse duration, 790 nm centre wavelength) in air is studied experimentally. Irradiation spots have been generated with different peak fluences and subsequently investigated by optical topometry, micro Raman spectroscopy and microscale mechanical indentation in order to evaluate their microscopic, topographical, structural and mechanical properties (e.g. elastic modulus). By this multi-method approach, a clear separation of different effects (delamination and graphitisation) becomes possible. The joint application of mechanical and spectroscopic techniques provides unique insights into the effects of the fs-laser radiation on the carbon layer. PY - 2013 U6 - https://doi.org/10.1007/s00339-012-7170-5 SN - 0947-8396 VL - 112 IS - 1 SP - 9 EP - 14 PB - Springer CY - Berlin AN - OPUS4-28629 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Geier, M. A1 - Eberstein, M. A1 - Grießmann, H. A1 - Partsch, U. A1 - Völkel, L. A1 - Böhme, R. A1 - Mann, Guido A1 - Bonse, Jörn A1 - Krüger, Jörg T1 - Impact of laser treatment on phosphoric acid coated multicrystalline silicon PV-wafers N2 - The selective emitter is a well-known technology for producing highly doped areas under the metallization grid to improve the solar cell performance. In this work, the influence of laser irradiation on phosphoric acid coated multicrystalline silicon PV-wafers on the wafer surface structure, the phosphorous depth distribution and the electrical contact resistance within the laser treated area as well as the electrical series resistance of laserprocessed solar cells was evaluated. Different laser processing settings were tested including pulsed and continuous wave (cw) laser sources (515 nm, 532 nm, 1064 nm wavelength). Complementary numerical simulations using the finite element method (FEM) were conducted to explain the impact of the laser parameters on the melting behavior (melt duration and geometry). It was found that the melt duration is a key parameter for a successful laser Doping process. Our simulations at a laser wavelengths of 515 nm reveal that low-repetition rate (<500 kHz) laser pulses of 300 ns duration generate a melt duration of ~0.35 µs, whereas upon scanning cw-laser radiation at 532 nm prolongates the melt duration by at least one order of magnitude. Experimentally, the widely used ns-laser pulses did not lead to satisfying laser irradiation results. In contrast, cw-laser radiation and scan velocities of less than 2 m/s led to suitable laser doping featuring low electrical resistances in the laser treated areas. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.2011 KW - Silicon solar cell KW - Selective emitter KW - Laser processing KW - Doping KW - Simulation PY - 2011 SN - 3-936338-27-2 U6 - https://doi.org/10.4229/26thEUPVSEC2011-2BV.1.7 SP - 1243 EP - 1247 AN - OPUS4-24995 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Eberstein, M. A1 - Geier, M. A1 - Grießmann, H. A1 - Partsch, U. A1 - Voelkel, L. A1 - Böhme, R. A1 - Pentzien, Simone A1 - Koter, Robert A1 - Mann, Guido A1 - Bonse, Jörn A1 - Krüger, Jörg T1 - Towards an industrial laser doping process for the selective emitter using phosphoric acid as dopant N2 - Different laser supported approaches have already been realized, proving the great potential of laserdoped selective emitters (LDSE). However, it is challenging to establish a low-cost process by using pulsed laser tools. So far a single-step process only leads to satisfying results utilizing cw-lasers. In this paper we have examined a two-step process to produce laser-doped selective emitters on multicrystalline textured standard silicon photovoltaic wafers (90-Ω/sq-Emitter, SiN-antireflection coating (ARC)). The precise ARC removal by near-infrared fs-laser pulses (30 fs, 800 nm), and the doping of uncoated silicon wafers by ns-laser pulses (8 ns, 532 nm) were systematically investigated. In the fs-experiment, optimum conditions for ARC removal were identified. In the nsexperiments under suitable conditions (melting regime), the phosphorous concentration underneath the wafer surface was significantly increased and the sheet resistance was reduced by nearly a factor of two. Moreover, electrical measurements on fired metallization fingers deposited on the laser processed wafers showed low contact resistances. Hence, wafer conditioning with combined fs-laser- and ns-laser-processes are expected to be a promising technology for producing selective emitters. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.2011 KW - Laser processing KW - Doping KW - Selective emitter KW - Multicrystalline silicon PY - 2011 SN - 3-936338-27-2 U6 - https://doi.org/10.4229/26thEUPVSEC2011-2BV.1.2 SP - 1220 EP - 1223 AN - OPUS4-24996 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Höhm, S. A1 - Rosenfeld, A. A1 - Krüger, Jörg A1 - Bonse, Jörn T1 - Femtosecond diffraction dynamics of laser-induced periodic surface structures on fused silica N2 - The formation of laser-induced periodic surface structures (LIPSS) on fused silica upon irradiation with linearly polarized fs-laser pulses (50 fs pulse duration, 800?nm center wavelength) is studied experimentally using a transillumination femtosecond time-resolved (0.1 ps-1 ns) pump-probe diffraction approach. This allows to reveal the generation dynamics of near-wavelength-sized LIPSS showing a transient diffraction at specific spatial frequencies even before a corresponding permanent surface relief was observed. The results confirm that the ultrafast energy deposition to the materials surface plays a key role and triggers subsequent physical mechanisms such as carrier scattering into self-trapped excitons. KW - High-speed optical techniques KW - Laser beam effects KW - Silicon compounds KW - Surface structure PY - 2013 U6 - https://doi.org/10.1063/1.4790284 SN - 0003-6951 SN - 1077-3118 VL - 102 IS - 5 SP - 054102-1 EP - 054102-4 PB - American Institute of Physics CY - Melville, NY AN - OPUS4-27646 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Rosenfeld, A. A1 - Rohloff, M. A1 - Höhm, S. A1 - Krüger, Jörg A1 - Bonse, Jörn T1 - Formation of laser-induced periodic surface structures on fused silica upon multiple parallel polarized double-femtosecond-laser-pulse irradiation sequences N2 - The formation of laser-induced periodic surface structures (LIPSS) upon irradiation of fused silica with multiple irradiation sequences of parallel polarized Ti:sapphire femtosecond laser pulse pairs (160 fs pulse duration, 800 nm central wavelength) was studied experimentally. For that purpose, a Michelson interferometer was used to generate near-equal-energy double-pulse sequences allowing the temporal pulse delay between the parallel-polarized individual fs-laser pulses to be varied between 0 and 40 ps with ~0.2 ps temporal resolution. The surface morphologies of the irradiated surface areas were characterized by means of scanning electron and scanning force microscopy. In the sub-ps delay range a strong decrease of the LIPSS periods and the ablation crater depths with the double-pulse delay was observed indicating the importance of the laser-induced free-electron plasma in the conduction band of the solids for the formation of LIPSS. KW - Laser-induced periodic surface structures (LIPSS) KW - Femtosecond laser ablation KW - Double-pulse experiments KW - Fused silica KW - Michelson interferometer PY - 2012 U6 - https://doi.org/10.1016/j.apsusc.2011.09.076 SN - 0169-4332 SN - 1873-5584 VL - 258 IS - 23 SP - 9233 EP - 9236 PB - North-Holland CY - Amsterdam AN - OPUS4-26226 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Höhm, S. A1 - Rohloff, M. A1 - Rosenfeld, A. A1 - Krüger, Jörg A1 - Bonse, Jörn T1 - Dynamics of the formation of laser-induced periodic surface structures on dielectrics and semiconductors upon femtosecond laser pulse irradiation sequences N2 - The formation of laser-induced periodic surface structures (LIPSS) upon irradiation of fused silica and silicon with multiple (NDPS) irradiation sequences consisting of linearly polarized femtosecond laser pulse pairs (pulse duration ~150 fs, central wavelength ~800 nm) is studied experimentally. Nearly equal-energy double-pulse sequences are generated allowing the temporal pulse delay Δt between the cross-polarized individual fs-laser pulses to be varied from -40 ps to +40 ps with a resolution of ~0.2 ps. The surface morphologies of the irradiated surface areas are characterized by means of scanning electron and scanning force microscopy. Particularly for dielectrics in the sub-ps delay range striking differences in the orientation and spatial characteristics of the LIPSS can be observed. For fused silica, a significant decrease of the LIPSS spatial periods from ~790 nm towards ~550 nm is demonstrated for delay changes of less than ~2 ps. In contrast, for silicon under similar irradiation conditions, the LIPSS periods remain constant (~760 nm) for delays up to 40 ps. The results prove the impact of laser-induced electrons in the conduction band of the solid and associated transient changes of the optical properties on fs-LIPSS formation. PY - 2013 U6 - https://doi.org/10.1007/s00339-012-7184-z SN - 0947-8396 VL - 110 IS - 3 SP - 553 EP - 557 PB - Springer CY - Berlin AN - OPUS4-27787 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Höhm, S. A1 - Rosenfeld, A. A1 - Krüger, Jörg T1 - Sub-100-nm laser-induced periodic surface structures upon irradiation of titanium by Ti:sapphire femtosecond laser pulses in air N2 - The formation of laser-induced periodic surface structures (LIPSS) on titanium upon irradiation with linearly polarized femtosecond (fs) laser pulses (τ = 30 fs, λ = 790 nm) in an air environment is studied experimentally and theoretically. In the experiments, the dependence on the laser fluence and the number of laser pulses per irradiation spot has been analyzed. For a moderate number of laser pulses (N < 1000) and at fluences between ~0.09 and ~0.35 J/cm², predominantly low-spatial-frequency-LIPSS with periods between 400 nm and 800 nm are observed perpendicular to the polarization. In a narrow fluence range between 0.05 and 0.09 J/cm², high-spatial-frequency-LIPSS with sub-100-nm spatial periods (~λ/10) can be generated with an orientation parallel to the polarization (N = 50). These experimental results are complemented by calculations based on a theoretical LIPSS model and compared to the present literature. PY - 2013 U6 - https://doi.org/10.1007/s00339-012-7140-y SN - 0947-8396 VL - 110 IS - 3 SP - 547 EP - 551 PB - Springer CY - Berlin AN - OPUS4-27788 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Baudach, Steffen A1 - Krüger, Jörg A1 - Kautek, Wolfgang A1 - Lenzner, Matthias T1 - Femtosecond laser ablation of silicon-modification thresholds and morphology N2 - We investigated the initial modification and ablation of crystalline silicon with single and multiple Ti:sapphire laser pulses of 5 to 400 fs duration. In accordance with earlier established models, we found the phenomena amorphization, melting, re-crystallization, nucleated vaporization, and ablation to occur with increasing laser fluence down to the shortest pulse durations. We noticed new morphological features (bubbles) as well as familiar ones (ripples, columns). A nearly constant ablation threshold fluence on the order of 0.2 J/cm2 for all pulse durations and multiple-pulse irradiation was observed. For a duration of ,100 fs, significant incubation can be observed, whereas for 5 fs pulses, the ablation threshold does not depend on the pulse number within the experimental error. For micromachining of silicon, a pulse duration of less than 500 fs is not advantageous. PY - 2002 U6 - https://doi.org/10.1007/s003390100893 SN - 0947-8396 VL - 74 IS - 1 SP - 19 EP - 25 PB - Springer CY - Berlin AN - OPUS4-6328 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Jeschke, H.O. A1 - Garcia, M.E. A1 - Lenzner, Matthias A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Kautek, Wolfgang T1 - Laser ablation thresholds of silicon for different pulse durations: theory and experiment N2 - The ultrafast laser ablation of silicon has been investigated experimentally and theoretically. The theoretical description is based on molecular dynamics (MD) simulations combined with a microscopic electronic model. We determine the thresholds of melting and ablation for two different pulse durations =20 and 500 fs. Experiments have been performed using 100 Ti:Sap-phire laser pulses per spot in air environment. The ablation thresholds were determined for pulses with a duration of 25 and 400 fs, respectively. Good agreement is obtained between theory and experiment. KW - Laser ablation KW - Pulse duration KW - Threshold of silicon PY - 2002 U6 - https://doi.org/10.1016/S0169-4332(02)00458-0 SN - 0169-4332 SN - 1873-5584 VL - 197-198 SP - 839 EP - 844 PB - North-Holland CY - Amsterdam AN - OPUS4-6314 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Derrien, Thibault A1 - Krüger, Jörg A1 - Itina, T.E. A1 - Höhm, S. A1 - Rosenfeld, A. A1 - Bonse, Jörn T1 - Rippled area formed by surface plasmon polaritons upon femtosecond laser double-pulse irradiation of silicon N2 - The formation of near-wavelength laser-induced periodic surface structures (LIPSS) on silicon upon irradiation with sequences of Ti:sapphire femtosecond laser pulse pairs (pulse duration 150 fs, central wavelength 800 nm) is studied theoretically. For this purpose, the nonlinear generation of conduction band electrons in silicon and their relaxation is numerically calculated using a two-temperature model approach including intrapulse changes of optical properties, transport, diffusion and recombination effects. Following the idea that surface plasmon polaritons (SPP) can be excited when the material turns from semiconducting to metallic state, the 'SPP active area' is calculated as function of fluence and double-pulse delay up to several picoseconds and compared to the experimentally observed rippled surface areas. Evidence is presented that multi-photon absorption explains the large increase of the rippled area for temporally overlapping pulses. For longer double-pulse delays, relevant relaxation processes are identified. The results demonstrate that femtosecond LIPSS on silicon are caused by the excitation of SPP and can be controlled by temporal pulse shaping. PY - 2013 U6 - https://doi.org/10.1364/OE.21.029643 SN - 1094-4087 VL - 21 IS - 24 SP - 29643 EP - 29655 PB - Optical Society of America CY - Washington, DC AN - OPUS4-29650 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Rosenfeld, A. A1 - Krüger, Jörg T1 - On the role of surface plasmon polaritons in the formation of laser-induced periodic surface structures upon irradiation of silicon by femtosecond-laser pulses N2 - The formation of nearly wavelength-sized laser-induced periodic surface structures (LIPSSs) on single-crystalline silicon upon irradiation with single or multiple femtosecond-laser pulses (pulse duration τ=130 fs and central wavelength λ=800 nm) in air is studied experimentally and theoretically. In our theoretical approach, we model the LIPSS formation by combining the generally accepted first-principles theory of Sipe and co-workers with a Drude model in order to account for transient intrapulse changes in the optical properties of the material due to the excitation of a dense electron-hole plasma. Our results are capable to explain quantitatively the spatial periods of the LIPSSs being somewhat smaller than the laser wavelength, their orientation perpendicular to the laser beam polarization, and their characteristic fluence dependence. Moreover, evidence is presented that surface plasmon polaritons play a dominant role during the initial stage of near-wavelength-sized periodic surface structures in femtosecond-laser irradiated silicon, and it is demonstrated that these LIPSSs can be formed in silicon upon irradiation by single femtosecond-laser pulses. KW - Ab initio calculations KW - Elemental semiconductors KW - High-speed optical techniques KW - Laser beam effects KW - Polaritons KW - Silicon KW - Solid-state plasma KW - Surface plasmons KW - Surface structure PY - 2009 U6 - https://doi.org/10.1063/1.3261734 SN - 0021-8979 SN - 1089-7550 VL - 106 IS - 10 SP - 104910-1 - 104910-5 PB - American Institute of Physics CY - Melville, NY AN - OPUS4-20453 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Krüger, Jörg T1 - Pulse number dependence of laser-induced periodic surface structures for femtosecond laser irradiation of silicon N2 - The formation of nearly wavelength-sized laser-induced periodic surface structures (LIPSS) on single-crystalline silicon upon irradiation with single (N = 1) and multiple (N ≤ 1000) linearly polarized femtosecond (fs) laser pulses (pulse duration τ = 130 fs, central wavelength λ = 800 nm) in air is studied experimentally. Scanning electron microscopy (SEM) and optical microscopy are used for imaging of the ablated surface morphologies, both revealing LIPSS with periodicities close to the laser wavelength and an orientation always perpendicular to the polarization of the fs-laser beam. It is experimentally demonstrated that these LIPSS can be formed in silicon upon irradiation by single fs-laser pulses—a result that is additionally supported by a recent theoretical model. Two-dimensional Fourier transforms of the SEM images allow the detailed analysis of the distribution of the spatial frequencies of the LIPSS and indicate, at a fixed peak fluence, a monotonous decrease in their mean spatial period between ~770 nm (N = 1) and 560 nm (N = 1000). The characteristic decrease in the LIPSS period is caused by a feedback-mechanism acting upon excitation of surface plasmon polaritons at the rough silicon surface which is developing under the action of multiple pulses into a periodically corrugated surface. KW - Elemental semiconductors KW - Fourier transforms KW - Laser beam effects KW - Optical microscopy KW - Polarisation KW - Polaritons KW - Scanning electron microscopy KW - Silicon KW - Surface morphology KW - Surface plasmons PY - 2010 UR - http://jap.aip.org/resource/1/japiau/v108/i3/p034903_s1 U6 - https://doi.org/10.1063/1.3456501 SN - 0021-8979 SN - 1089-7550 VL - 108 IS - 3 SP - 034903-1 - 034903-5 PB - American Institute of Physics CY - Melville, NY AN - OPUS4-21804 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Krüger, Jörg T1 - Probing the heat affected zone by chemical modifications in femtosecond pulse laser ablation of titanium nitride films in air N2 - A new approach is presented to quantify the so-called "heat affected zone" (HAZ) during femtosecond laser pulse processing. Ablation of titanium nitride (TiN) thin films (~3 μm thickness) by multiple femtosecond laser pulses (τ=130 fs, λ=800 nm) in air environment was studied by means of two different surface analytical methods both being sensitive to chemical alterations at the surface. Scanning Auger electron microscopy was applied for a visualization of the spatial distribution of specific elements (Ti, O) within the laser-modified areas. The chemical state of the irradiated surface was revealed by complementary x-ray photoelectron spectroscopy. Both methods were used for a depth-profiling chemical analysis (tracking the elements Ti, N, O, and C) using an Ar-ion beam for surface sputtering. In a narrow laser fluence range slightly below the ablation threshold of TiN significant superficial oxidation can be observed leading to the formation of substoichiometric TiO2-x. At fluences above the ablation threshold, an increased titanium concentration is observed within the entire ablation craters. Following upon sputter removal the elemental distribution into the depth of the nonablated material, the results allow an estimation of the heat-affected zone for femtosecond laser ablation in air environment. According to our analyses, the HAZ extends up to a few hundreds of nanometers into the nonablated material. KW - Femtosecond laser ablation KW - Heat affected zone KW - Titanium nitride KW - Scanning Auger electron microscopy KW - X-ray KW - Photoelektron spectroscopy PY - 2010 UR - http://link.aip.org/link/?JAP/107/054902 U6 - https://doi.org/10.1063/1.3311552 SN - 0021-8979 SN - 1089-7550 VL - 107 IS - 5 SP - 054902-1 - 054902-5 PB - American Institute of Physics CY - Melville, NY AN - OPUS4-20949 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Höhm, S. A1 - Herzlieb, M. A1 - Rosenfeld, A. A1 - Krüger, Jörg A1 - Bonse, Jörn T1 - Formation of laser-induced periodic surface structures on fused silica upon two-color double-pulse irradiation N2 - The formation of laser-induced periodic surface structures (LIPSS) upon irradiation of fused silica with multiple irradiation sequences consisting of laser pulse pairs (50 fs single-pulse duration) of two different wavelengths (400 and 800 nm) is studied experimentally. Parallel polarized double-pulse sequences with a variable delay Δt between -10 and +10 ps and between the individual fs-laser pulses were used to investigate the LIPSS periods versus Δt. These two-color experiments reveal the importance of the ultrafast energy deposition to the silica surface by the first laser pulse for LIPSS formation. The second laser pulse subsequently reinforces the previously seeded spatial LIPSS frequencies. PY - 2013 U6 - https://doi.org/10.1063/1.4850528 SN - 0003-6951 SN - 1077-3118 VL - 103 IS - 25 SP - 254101-1 EP - 254101-4 PB - American Institute of Physics CY - Melville, NY AN - OPUS4-29812 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Mann, Guido A1 - Krüger, Jörg A1 - Marcinkowski, M. A1 - Eberstein, M. T1 - Femtosecond laser-induced removal of silicon nitride layers from doped and textured silicon wafers used in photovoltaics N2 - The removal of a 75- to 90-nm-thick passivating silicon nitride antireflection coating from standard textured multicrystalline silicon photovoltaic wafers with a typical diffused 90-Ω/sq-emitter upon irradiation with near-infrared femtosecond laser pulses (790 nm central wavelength, 30 fs pulse duration) is studied experimentally. The laser irradiation areas are subsequently characterized by complementary optical microscopy, scanning electron microscopy and depth profiling chemical analyses using secondary ion mass spectrometry. The results clarify the thin-film femtosecond laser ablation scenario and outline the process windows for selective antireflection coating removal. KW - Photovoltaics KW - Solar cell KW - Laser processing KW - FS-laser ablation KW - Silicon nitride PY - 2013 U6 - https://doi.org/10.1016/j.tsf.2013.07.005 SN - 0040-6090 VL - 542 SP - 420 EP - 425 PB - Elsevier CY - Amsterdam AN - OPUS4-28874 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Krüger, Jörg T1 - Structuring of thin films by ultrashort laser pulses N2 - Modern life and global communication would not be possible without technologically tailored thin films; they are omnipresent in daily life applications. In most cases, the films are deposited entirely at the carrying substrates in a specific processing step of the device or sample. In some cases, however, removal or modification must be performed locally, i.e., site-controlled and material selective through an additional laser processing step. For that ultrashort laser pulses with durations in the femtosecond and picosecond range can provide unique advantages and capabilities in industrially scalable schemes. This article reviews the current state of the research and corresponding industrial transfer related to the structuring of thin films by ultrashort pulsed lasers. It focuses on the pertinent historic developments, reveals the relevant physical and chemical effects, explores the ultimate limits, and discusses selected industrial and scientific applications. KW - Thin films KW - Laser processing KW - Ultrashort lasers KW - Laser damage KW - Femtosecond laser ablation PY - 2023 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:b43-565732 SN - 0947-8396 SN - 1432-0630 VL - 129 IS - 1 SP - 1 EP - 38 PB - Springer CY - Berlin AN - OPUS4-56573 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Böttcher, Katrin A1 - Schmitt Rahner, M. A1 - Stolzenberg, U. A1 - Kraft, Sebastian A1 - Bonse, Jörn A1 - Feist, C. A1 - Albrecht, D. A1 - Pullner, B. A1 - Krüger, Jörg T1 - Worst-case X-ray photon energies in ultrashort pulse laser processing N2 - Ultrashort pulse laser processing can result in the secondary generation of unwanted X-rays if a critical laser irradiance of about 10^13 W/cm^2 is exceeded. Spectral X-ray emissions were investigated during the processing of tungsten and steel using three complementary spectrometers (based on CdTe and silicon drift detectors) simultaneously for the identification of a worst-case spectral scenario. Therefore, maximum X-ray photon energies were determined, and corresponding dose equivalent rates were calculated. An ultrashort pulse laser workstation with a pulse duration of 274 fs, a center wavelength of 1030 nm, pulse repetition rates between 50 kHz and 200 kHz, and a Gaussian laser beam focused to a spot diameter of 33 µm was employed in a single pulse and burst laser operation mode. Different combinations of laser pulse energy and repetition rate were utilized, keeping the average laser power constant close to the maximum power of 20 W. Peak irradiances ranging from 7.3 × 10^13 W/cm^2 up to 3.0 × 10^14 W/cm^2 were used. The X-ray dose equivalent rate increases for lower repetition rates and higher pulse energy if a constant average power is used. Laser processing with burst mode significantly increases the dose rates and the X-ray photon energies. A maximum X-ray photon energy of about 40 keV was observed for burst mode processing of tungsten with a repetition rate of 50 kHz and a peak irradiance of 3 × 10^14 W/cm^2. KW - Ultrashort pulsed laser KW - X-ray emission KW - X-ray spectrum KW - X-ray energies KW - Radiation protection PY - 2022 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:b43-566176 VL - 15 IS - 24 SP - 1 EP - 17 PB - MDPI AN - OPUS4-56617 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Stolzenberg, U. A1 - Schmitt Rahner, M. A1 - Pullner, B. A1 - Legall, Herbert A1 - Bonse, Jörn A1 - Kluge, M. A1 - Ortner, A. A1 - Hoppe, B. A1 - Krüger, Jörg T1 - X-ray emission hazards from ultrashort pulsed laser material processing in an industrial setting N2 - Interactions between ultrashort laser pulses with intensities larger than 10^13 W/cm^2 and solids during material processing can lead to the emission of X-rays with photon energies above 5 keV, causing radiation hazards to operators. A framework for inspecting X-ray emission hazards during laser material processing has yet to be developed. One requirement for conducting radiation protection inspections is using a reference scenario, i.e., laser settings and process parameters that will lead to an almost constant and high level of X-ray emissions. To study the feasibility of setting up a reference scenario in practice, ambient dose rates and photon energies were measured using traceable measurement equipment in an industrial setting at SCHOTT AG. Ultrashort pulsed (USP) lasers with a maximum average power of 220 W provided the opportunity to measure X-ray emissions at laser peak intensities of up to 3.3 × 10^15 W/cm^2 at pulse durations of ~1 ps. The results indicate that increasing the laser peak intensity is insufficient to generate high dose rates. The investigations were affected by various constraints which prevented measuring high ambient dose rates. In this work, a list of issues which may be encountered when performing measurements at USP-laser machines in industrial settings is identified. KW - X-ray emission hazards KW - Ultrashort pulsed laser KW - Radiation protection KW - Industrial applications KW - Protection housing PY - 2021 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:b43-538632 SN - 1996-1944 VL - 14 SP - 1 EP - 17 PB - MDPI CY - Basel AN - OPUS4-53863 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Legall, Herbert A1 - Bonse, Jörn A1 - Krüger, Jörg T1 - Emission of X-rays during ultrashort pulse laser processing N2 - Ultrashort pulse laser materials processing can be accompanied by the production of X-rays. Small doses per laser pulse can accumulate to significant dose rates at high laser pulse repetition rates which may exceed the permitted X-ray limits for human exposure. Consequently, a proper radiation shielding must be considered in laser machining. A brief overview of the current state of the art in the field of undesired generation of X-ray radiation during ultrashort pulse laser material processing in air is presented. T2 - Lasers in Manufacturing Conference 2021 CY - Online meeting DA - 21.06.2021 KW - Ultra-short pulse laser processing KW - Laser-induced X-ray emission KW - Radiation protection PY - 2021 SP - 1 EP - 5 AN - OPUS4-53866 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CHAP A1 - Bonse, Jörn A1 - Kirner, Sabrina V. A1 - Krüger, Jörg ED - Sugioka, K. T1 - Laser-Induced Periodic Surface Structures (LIPSS) N2 - Laser-induced periodic surface structures (LIPSS) are a universal phenomenon and can be generated on almost any material by irradiation with linearly polarized radiation. This chapter reviews the current state in the field of LIPSS, which are formed in a “self-ordered” way and are often accompanying materials processing applications. LIPSS can be produced in a single-stage process and enable surface nanostructuring and, in turn, adaption of optical, mechanical, and chemical surface properties. Typically, they feature a structural size ranging from several micrometers down to less than 100 nm and show a clear correlation with the polarization direction of the light used for their generation. Various types of LIPSS are classified, relevant control parameters are identified, and their material-specific formation mechanisms are analyzed for different types of inorganic solids, i.e., metals, semiconductors, and dielectrics. Finally, technological applications featuring surface functionalization in the fields of optics, fluidics, medicine, and tribology are discussed. KW - Laser-induced periodic surface structures (LIPSS) KW - Femtosecond laser KW - Laser ablation KW - Microstructures KW - Nanostrcutures PY - 2021 SN - 978-3-030-63646-3 (Print) SN - 978-3-030-63647-0 (Online) U6 - https://doi.org/10.1007/978-3-030-63647-0_17 SP - 879 EP - 936 PB - Springer-Nature Switzerland AG CY - Cham ET - 1 AN - OPUS4-53728 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Legall, Herbert A1 - Bonse, Jörn A1 - Krüger, Jörg T1 - Review of x-ray exposure and safety issues arising from ultra-short pulse laser material processing N2 - Laser processing with ultra-short laser pulses enables machining of materials with high accuracy and throughput. The development of novel laser Technologies with laser pulse repetition rates up to the MHz range opened the way for industrial manufacturing processes. From a radiological point of view this evolution is important, because x-ray radiation can be generated as an unwanted side effect in laser material processing. Even if the emitted x-ray dose per pulse is comparably low, the x-ray dose can become hazardous to health at high laser repetition rates. Therefore, radiation protection must be considered. This article provides an overview on the generation and detection of x-rays in laser material processing, as well as on the handling of this radiation risk in the framework of radiological protection. KW - Ultra-short pulse laser processing KW - Laser-induced x-ray emission KW - Radiation protection PY - 2021 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:b43-522376 VL - 41 IS - 1 SP - R28 EP - R42 AN - OPUS4-52237 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Höhm, S. A1 - Kirner, Sabrina A1 - Rosenfeld, A. A1 - Krüger, Jörg T1 - Laser-induced periodic surface structures (LIPSS) - A scientific evergreen N2 - The current state in the field of laser-induced periodic surface structures (LIPSS, ripples) is reviewed. Their formation mechanisms are analyzed in ultrafast experiments (time-resolved diffraction and polarization controlled double-pulse experiments) and technological applications are demonstrated. T2 - Conference on Lasers and Electro-Optics (CLEO) - Science and Innovations 2016 CY - San Jose, CA, USA DA - 05.06.2016 KW - Laser materials processing KW - Optics at surfaces KW - Ultrafast phenomena KW - Laser-induced periodic surface strcutures (LIPSS) KW - Femtosecond laser ablation PY - 2016 SN - 978-1-943580-11-8 U6 - https://doi.org/10.1364/CLEO_SI.2016.STh1Q.3 SP - STh1Q.3, 1 EP - 2 PB - Optical Society of America AN - OPUS4-37072 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Derrien, Thibault A1 - Koter, Robert A1 - Krüger, Jörg A1 - Höhm, S. A1 - Rosenfeld, A. A1 - Bonse, Jörn T1 - Plasmonic formation mechanism of periodic 100-nm-structures upon femtosecond laser irradiation of silicon in water N2 - The formation of laser-induced periodic surface structures (LIPSS) upon irradiation of silicon by multiple (N = 100) linearly polarized Ti:sapphire femtosecond laser pulses (duration τ = 30 fs, center wavelength λ0 ~ 790 nm) is studied experimentally in air and water environment. The LIPSS surface morphologies are characterized by scanning electron microscopy and their spatial periods are quantified by two-dimensional Fourier analyses. It is demonstrated that the irradiation environment significantly influences the periodicity of the LIPSS. In air, so-called low-spatial frequency LIPSS (LSFL) were found with periods somewhat smaller than the laser wavelength (ΛLSFL ~ 0.7 × λ0) and an orientation perpendicular to the laser polarization. In contrast, for laser processing in water a reduced ablation threshold and LIPSS with approximately five times smaller periods ΛLIPSS ~ 0.15 × λ0 were observed in the same direction as in air. The results are discussed within the frame of recent LIPSS theories and complemented by a thin film based surface plasmon polariton model, which successfully describes the tremendously reduced LIPSS periods in water. PY - 2014 U6 - https://doi.org/10.1063/1.4887808 SN - 0021-8979 SN - 1089-7550 VL - 116 IS - 7 SP - 074902-1 EP - 074902-8 PB - American Institute of Physics CY - Melville, NY AN - OPUS4-31209 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Koter, Robert A1 - Hartelt, Manfred A1 - Spaltmann, Dirk A1 - Pentzien, Simone A1 - Höhm, S. A1 - Rosenfeld, A. A1 - Krüger, Jörg T1 - Femtosecond laser-induced periodic surface structures on steel and titanium alloy for tribological applications N2 - Laser-induced periodic surface structures (LIPSS, ripples) were generated on stainless steel (100Cr6) and titanium alloy (Ti6Al4V) surfaces upon irradiation with multiple femtosecond laser pulses (pulse duration 30 fs, central wavelength 790 nm). The experimental conditions (laser fluence, spatial spot overlap) were optimized in a sample-scanning geometry for the processing of large surface areas (5 × 5 mm²) covered homogeneously by the nanostructures. The irradiated surface regions were subjected to white light interference microscopy and scanning electron microscopy revealing spatial periods around 600 nm. The tribological performance of the nanostructured surface was characterized by reciprocal sliding against a ball of hardened steel in paraffin oil and in commercial engine oil as lubricants, followed by subsequent inspection of the wear tracks. For specific conditions, on the titanium alloy a significant reduction of the friction coefficient by a factor of more than two was observed on the laser-irradiated (LIPSS-covered) surface when compared to the non-irradiated one, indicating the potential benefit of laser surface structuring for tribological applications. PY - 2014 U6 - https://doi.org/10.1007/s00339-014-8229-2 SN - 0947-8396 VL - 117 IS - 1 SP - 103 EP - 110 PB - Springer CY - Berlin AN - OPUS4-31450 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Derrien, Thibault A1 - Krüger, Jörg A1 - Itina, T.E. A1 - Höhm, S. A1 - Rosenfeld, A. A1 - Bonse, Jörn T1 - Rippled area formed by surface plasmon polaritons upon femtosecond laser double-pulse irradiation of silicon: the role of carrier generation and relaxation processes N2 - The formation of laser-induced periodic surface structures (LIPSS, ripples) upon irradiation of silicon with multiple irradiation sequences consisting of femtosecond laser pulse pairs (pulse duration 150 fs, central wavelength 800 nm) is studied numerically using a rate equation system along with a two-temperature model accounting for one- and two-photon absorption and subsequent carrier diffusion and Auger recombination processes. The temporal delay between the individual equal-energy fs-laser pulses was varied between 0 and ~4 ps for quantification of the transient carrier densities in the conduction band of the laser-excited silicon. The results of the numerical analysis reveal the importance of carrier generation and relaxation processes in fs-LIPSS formation on silicon and quantitatively explain the two time constants of the delay-dependent decrease of the low spatial frequency LIPSS (LSFL) area observed experimentally. The role of carrier generation, diffusion and recombination is quantified individually. PY - 2014 U6 - https://doi.org/10.1007/s00339-013-8205-2 SN - 0947-8396 VL - 117 IS - 1 SP - 77 EP - 81 PB - Springer CY - Berlin AN - OPUS4-31451 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Bachelier, G. A1 - Wiggins, S. M. A1 - Siegel, J. A1 - Solis, J. A1 - Krüger, Jörg A1 - Sturm, Heinz T1 - Femtosecond laser ablation of indium phosphide in air: dynamical, structural and morphological evolution N2 - The irradiation of single-crystalline indium phosphide (c-InP) by Ti:sapphire femtosecond laser pulses (130 fs, 800 nm) in air is studied by means of in-situ time resolved reflectivity measurements [fs-time-resolved microscopy (100 fs-10 ns) and point probing analysis (ns - µs)] and by complementary ex-situ surface analytical methods (Micro Raman Spectroscopy, Scanning Force, and Optical Microscopy). The dynamics of melting, ablation, and optical breakdown as well as structural changes resulting from rapid solidification are investigated in detail. Different laser-induced surface morphologies are characterized and discussed on the basis of recent ablation and optical breakdown models. KW - Femtosecond laser ablation KW - Optical breakdown KW - Time-resolved measurements KW - Semiconductor KW - Indium phosphide PY - 2010 SN - 1454-4164 VL - 12 IS - 3 SP - 421 EP - 426 PB - INOE & INFM CY - Bucharest AN - OPUS4-21082 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Rosenfeld, A. A1 - Krüger, Jörg T1 - Implications of transient changes of optical and surface properties of solids during femtosecond laser pulse irradiation to the formation of laser-induced periodic surface structures N2 - The formation of laser-induced periodic surface structures (LIPSS) upon irradiation of silicon wafer surfaces by linearly polarized Ti:sapphire femtosecond laser pulses (pulse duration 130 fs, central wavelength 800 nm) is studied experimentally and theoretically. In the experiments, so-called low-spatial frequency LIPSS (LSFL) were found with periods smaller than the laser wavelength and an orientation perpendicular to the polarization. The experimental results are analyzed by means of a new theoretical approach, which combines the widely accepted LIPSS theory of Sipe et al. with a Drude model, in order to account for transient (intra-pulse) changes of the optical properties of the irradiated materials. It is found that the LSFL formation is caused by the excitation of surface plasmon polaritons, SPPs, once the initially semiconducting material turns to a metallic state upon formation of a dense free-electron-plasma in the material and the subsequent interference between its electrical field with that of the incident laser beam resulting in a spatially modulated energy deposition at the surface. Moreover, the influence of the laser-excited carrier density and the role of the feedback upon the multi-pulse irradiation and its relation to the excitation of SPP in a grating-like surface structure is discussed. KW - Femtosecond laser ablation KW - Laser-induced periodic surface structures KW - (LIPSS) KW - Optical properties KW - Surface plasmon polaritons KW - Semiconductors KW - Silicon PY - 2011 U6 - https://doi.org/10.1016/j.apsusc.2010.11.059 SN - 0169-4332 SN - 1873-5584 VL - 257 IS - 12 SP - 5420 EP - 5423 PB - Elsevier B.V. CY - Amsterdam AN - OPUS4-23309 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Rosenfeld, A. A1 - Krüger, Jörg ED - Panchenko, V. ED - Mourou, G. ED - Zheltikov, A. M. T1 - Femtosecond laser-induced periodic surface structures: recent approaches to explain their sub-wavelength periodicities N2 - The formation of laser-induced periodic surface structures (LIPSS) upon irradiation of semiconductors and dielectrics by linearly polarized high-intensity Ti:sapphire fs-laser pulses (τ ~100 fs, λ ~800 nm) is studied experimentally and theoretically. In the experiments, two different types of LIPSS exhibiting very different spatial periods are observed (socalled LSFL – low spatial frequency LIPSS, and HSFL - high spatial frequency LIPSS), both having a different dependence on the incident laser fluence and pulse number per spot. The experimental results are analyzed by means of a new theoretical approach, which combines the generally accepted LIPSS theory of J. E. Sipe and co-workers [Phys. Rev. B 27, 1141-1154 (1983)] with a Drude model, in order to account for transient changes of the optical properties of the irradiated materials. The joint Sipe-Drude model is capable of explaining numerous aspects of fs-LIPSS formation, i.e., the orientation of the LIPSS, their fluence dependence as well as their spatial periods. The latter aspect is specifically demonstrated for silicon crystals, which show experimental LSFL periods Λ somewhat smaller than λ. This behaviour is caused by the excitation of surface plasmon polaritons, SPP, (once the initially semiconducting material turns to a metallic state upon formation of a dense free-electron-plasma in the material) and the subsequent interference between its electrical fields with that of the incident laser beam, resulting in a spatially modulated energy deposition at the surface. Upon multi-pulse irradiation, a feedback mechanism, caused by the redshift of the resonance in a grating-assisted SPP excitation, is further reducing the LSFL spatial periods. The SPP-based mechanism of LSFL successfully explains the remarkably large range of LSFL periods between ~0.6 λ and λ. T2 - LAT 2010 - International Conference on Lasers, Applications, and Technologies CY - Kazan, Russia DA - 23.08.2010 KW - Femtosecond laser ablation KW - Laser-induced periodic surface structures (LIPSS) KW - Surface plasmon polaritons KW - Second harmonic generation (SHG) KW - Silicon KW - Semiconductors KW - Dielectrics PY - 2011 U6 - https://doi.org/10.1117/12.879813 SN - 0277-786X N1 - Serientitel: Proceedings of SPIE – Series title: Proceedings of SPIE VL - 7994 SP - 79940M-1 EP - 79940M-10 CY - Bellingham, USA AN - OPUS4-23291 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Rohloff, M. A1 - Das, S.K. A1 - Höhm, S. A1 - Grunwald, R. A1 - Rosenfeld, A. A1 - Krüger, Jörg A1 - Bonse, Jörn T1 - Formation of laser-induced periodic surface structures on fused silica upon multiple cross-polarized double-femtosecond-laser-pulse irradiation sequences N2 - The formation of laser-induced periodic surface structures (LIPSS) upon irradiation of fused silica with multiple irradiation sequences consisting of five Ti:sapphire femtosecond (fs) laser pulse pairs (150 fs, 800 nm) is studied experimentally. A Michelson interferometer is used to generate near-equal-energy double-pulse sequences with a temporal pulse delay from -20 to +20 ps between the cross-polarized individual fs-laser pulses (~0.2 ps resolution). The results of multiple double-pulse irradiation sequences are characterized by means of Scanning Electron and Scanning Force Microscopy. Specifically in the sub-ps delay domain striking differences in the surface morphologies can be observed, indicating the importance of the laser-induced free-electron plasma in the conduction band of the solids for the formation of LIPSS. KW - Atomic force microscopy KW - Conduction bands KW - High-speed optical techniques KW - Laser beam effects KW - Scanning electron microscopy KW - Silicon compounds KW - Surface morphology PY - 2011 U6 - https://doi.org/10.1063/1.3605513 SN - 0021-8979 SN - 1089-7550 VL - 110 IS - 1 SP - 014910-1 - 014910-4 PB - American Institute of Physics CY - Melville, NY AN - OPUS4-24049 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Solis, J. A1 - Spielmann, C. A1 - Lippert, T. A1 - Krüger, Jörg T1 - Damage mechanisms in polymers upon NIR femtosecond pulse laser irradiation: sub-threshold processes and their implications for laser safety applications N2 - This contribution investigates laser-induced damage of thin film and bulk polymer samples, with the focus on physical processes occurring close to the damage threshold. In-situ real-time reflectivity (RTR) measurements with picosecond (ps) and nanosecond (ns) temporal resolution were performed on thin polymer films on a timescale up to a few microseconds (µs). A model for polymer thin film damage is presented, indicating that irreversible chemical modification processes take place already below the fluence threshold for macroscopic damage. On dye-doped bulk polymer filters (as used for laser goggles), transmission studies using fs-and ps-laser pulses reveal the optical saturation behavior of the material and its relation to the threshold of permanent damage. Implications of the sub-threshold processes for laser safety applications will be discussed for thin film and bulk polymer damage. T2 - International high-power laser ablation conference CY - Santa Fe, USA DA - 2010-04-18 KW - Polymer KW - Laser damage KW - Ultrashort laser pulses KW - Time-resolved reflectivity measurements KW - Laser safety PY - 2010 UR - http://link.aip.org/link/?APCPCS/1278/56/1 SN - 978-0-7354-0828-9 U6 - https://doi.org/10.1063/1.3507148 N1 - Serientitel: AIP conference proceedings – Series title: AIP conference proceedings IS - 1278 SP - 56 EP - 64 PB - American Institute of Physics CY - Melville, NY, USA AN - OPUS4-22156 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Derrien, T. J.-Y. A1 - Krüger, Jörg A1 - Bonse, Jörn T1 - Properties of surface plasmon polaritons on lossy materials: lifetimes, periods and excitation conditions N2 - The possibility to excite surface plasmon polaritons (SPPs) at the interface between two media depends on the optical properties of both media and geometrical aspects. Specific conditions allowing the coupling of light with a plasmon-active interface must be satisfied. Plasmonic effects are well described in noble metals where the imaginary part of the dielectric permittivity is often neglected ('perfect medium approximation (PMA)'). However, some systems exist for which such approximation cannot be applied, hence requiring a refinement of the common SPP theory. In this context, several properties of SPPs such as excitation conditions, period of the electromagnetic field modulation and SPP lifetime then may strongly deviate from that of the PMA. In this paper, calculations taking into account the imaginary part of the dielectric permittivities are presented. The model identifies analytical terms which should not be neglected in the mathematical description of SPPs on lossy materials. These calculations are applied to numerous material combinations resulting in a prediction of the corresponding SPP features. A list of plasmon-active interfaces is provided along with a quantification of the above mentioned SPP properties in the regime where the PMA is not applicable. KW - plasmon lifetime KW - surface plasmon polaritons KW - lossy materials PY - 2016 U6 - https://doi.org/10.1088/2040-8978/18/11/115007 SN - 2040-8986 (online) / 2040-8978 (print) VL - 18 IS - 11 SP - 115007 PB - IOP Publishing Ltd AN - OPUS4-37905 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Höhm, S. A1 - Herzlieb, M. A1 - Rosenfeld, A. A1 - Krüger, Jörg A1 - Bonse, Jörn T1 - Laser-induced periodic surface structures on fused silica upon cross-polarized two-color double-fs-pulse irradiation N2 - The dynamics of the formation of laser-induced periodic surface structures (LIPSS) on fused silica upon irradiation with linearly polarized fs-laser pulses (50 fs pulse duration) is studied by cross-polarized two-color double-fs-pulse experiments. In order to analyze the relevance of temporally distributed energy deposition in the early stage of LIPSS formation, a Mach-Zehnder interferometer was used for generating multiple double-pulse sequences at two different wavelengths (400 and 800 nm). The inter-pulse delay between the individual cross-polarized pulses of each sequence was systematically varied in the sub-ps range and the resulting LIPSS morphologies were characterized by scanning electron microscopy. It is found that the polarization of the first laser pulse arriving to the surface determines the orientation and the periodicity of the LIPSS. These two-color experiments further confirm the importance of the ultrafast energy deposition to the silica surface for LIPSS formation, particularly by the first laser pulse of each sequence. The second laser pulse subsequently reinforces the previously seeded spatial LIPSS characteristics (period, orientation). KW - Laser-induced periodic surface structures (LIPSS) KW - Femtosecond laser ablation KW - Double-pulse experiments KW - Ultrafast optical techniques KW - Mach-Zehnder interferometer PY - 2015 U6 - https://doi.org/10.1016/j.apsusc.2014.09.101 SN - 0169-4332 SN - 1873-5584 VL - 336 SP - 39 EP - 42 PB - North-Holland CY - Amsterdam AN - OPUS4-32860 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Koter, Robert A1 - Hartelt, Manfred A1 - Spaltmann, Dirk A1 - Pentzien, Simone A1 - Höhm, S. A1 - Rosenfeld, A. A1 - Krüger, Jörg T1 - Tribological performance of femtosecond laser-induced periodic surface structures on titanium and a high toughness bearing steel N2 - Laser-induced periodic surface structures (LIPSS, ripples) were processed on steel (X30CrMoN15-1) and titanium (Ti) surfaces by irradiation in air with linear polarized femtosecond laser pulses with a pulse duration of 30 fs at 790 nm wavelength. For the processing of large LIPSS covered surface areas (5 mm × 5 mm), the laser fluence and the spatial spot overlap were optimized in a sample-scanning geometry. The laser-processed surfaces were characterized by optical microscopy (OM), white light interference microscopy (WLIM) and scanning electron microscopy (SEM). Spatial LIPSS periods between 450 and 600 nm were determined. The nanostructured surface regions were tribologically tested under reciprocal sliding conditions against a 10-mm diameter ball of hardened 100Cr6 steel. Paraffin oil and engine oil were used as lubricants for 1000 sliding cycles at 1 Hz with a normal load of 1.0 N. The corresponding wear tracks were analyzed by OM and SEM. In particular cases, the laser-generated nanostructures endured the tribological treatment. Simultaneously, a significant reduction of the friction coefficient and the wear was observed in the laser-irradiated (LIPSS-covered) areas when compared to the non-irradiated surface. The experiments reveal the potential benefit of laser surface structuring for tribological applications. KW - Laser-induced periodic surface structures (LIPSS) KW - Femtosecond laser processing KW - Tribology KW - Metals PY - 2015 U6 - https://doi.org/10.1016/j.apsusc.2014.08.111 SN - 0169-4332 SN - 1873-5584 VL - 336 SP - 21 EP - 27 PB - North-Holland CY - Amsterdam AN - OPUS4-32861 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Höhm, S. A1 - Rosenfeld, A. A1 - Krüger, Jörg A1 - Bonse, Jörn T1 - Laser-induced periodic surface structures on titanium upon single- and two-color femtosecond double-pulse irradiation N2 - Single- and two-color double-fs-pulse experiments were performed on titanium to study the dynamics of the formation of laser-induced periodic surface structures (LIPSS). A Mach-Zehnder inter-ferometer generated polarization controlled (parallel or cross-polarized) double-pulse sequences in two configurations – either at 800 nm only, or at 400 and 800 nm wavelengths. The inter-pulse delays of the individual 50-fs pulses ranged up to some tens of picoseconds. Multiple of these single- or two-color double-fs-pulse sequences were collinearly focused by a spherical mirror to the sample surface. In both experimental configurations, the peak fluence of each individual pulse was kept below its respective ablation threshold and only the joint action of both pulses lead to the formation of LIPSS. Their resulting characteristics were analyzed by scanning electron microscopy and the periods were quantified by Fourier analyses. The LIPSS periods along with the orientation allow a clear identification of the pulse which dominates the energy coupling to the material. A plasmonic model successfully explains the delay-dependence of the LIPSS on titanium and confirms the importance of the ultrafast energy deposition stage for LIPSS formation. PY - 2015 U6 - https://doi.org/10.1364/OE.23.025959 SN - 1094-4087 VL - 23 IS - 20 SP - 25959 EP - 25971 PB - Optical Society of America CY - Washington, DC AN - OPUS4-34354 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CHAP A1 - Bonse, Jörn A1 - Höhm, S. A1 - Hartelt, Manfred A1 - Spaltmann, Dirk A1 - Pentzien, Simone A1 - Koter, Robert A1 - Marschner, S. A1 - Rosenfeld, A. A1 - Krüger, Jörg ED - König, K. ED - Ostendorf, A. T1 - Femtosecond laser-induced surface nanostructures for tribological applications N2 - Laser-induced periodic surface structures (LIPSS) were generated on two types of steel (100Cr6, X30CrMoN15-1) and two types of titanium (Ti, Ti6A14V) surfaces upon irradiation with multiple linear polarized femtosecond laser pulses in air environment (pulse duration 30 fs, central wavelength 790 nm, pulse repetition rate 1 kHz, Gaussian beam shape). Teh conditions (laser fluence, spatial spot overlap) were optimized in a sample-scanning geometry for the processing of large surface areas covered homogeneously by two different types of LIPSS - either near wavelength or sub-100 nm structures. The tribological performance of the nanostructured surfaces was characterized under reciprocating sliding at 1 Hz against a ball of hardened steel using different lubricants and normal forces. After 1000 cycles the corresponding wear tracks were characterized by optical and scanning electron microscopy. For specific conditions, the wear was strongly reduced and laser-generated nanostructures endured the tribological treatment. Simultaneously, a significant reduction of the friction coefficient was observed in the laser-irradiated LIPSS-covered areas, indicating the benefit of laser surface structuring for tribological applications. The spatially Gaussian shaped beam used for the laser processing was transformed via beam shaping into a top hat distribution at the surface of the samples for optimization. The tribological performance of the laser-induced nanostructures is discussed on the basis of different physical and chemical mechanisms. PY - 2015 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:b43-332647 SN - 978-3-11-033718-1 SN - 978-3-11-035432-4 SP - Chapter 7, 141 EP - 156 PB - De Gruyter AN - OPUS4-33264 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Höhm, S. A1 - Herzlieb, M. A1 - Rosenfeld, A. A1 - Krüger, Jörg A1 - Bonse, Jörn T1 - Femtosecond laser-induced periodic surface structures on silicon upon polarization controlled two-color double-pulse irradiation N2 - Two-color double-fs-pulse experiments were performed on silicon wafers to study the temporally distributed energy deposition in the formation of laser-induced periodic surface structures (LIPSS). A Mach-Zehnder interferometer generated parallel or cross-polarized double-pulse sequences at 400 and 800 nm wavelength, with inter-pulse delays up to a few picoseconds between the sub-ablation 50-fs-pulses. Multiple two-color double-pulse sequences were collinearly focused by a spherical mirror to the sample. The resulting LIPSS characteristics (periods, areas) were analyzed by scanning electron microscopy. A wavelength-dependent plasmonic mechanism is proposed to explain the delay-dependence of the LIPSS. These two-color experiments extend previous single-color studies and prove the importance of the ultrafast energy deposition for LIPSS formation. PY - 2015 U6 - https://doi.org/10.1364/OE.23.000061 SN - 1094-4087 VL - 23 IS - 1 SP - 61 EP - 71 PB - Optical Society of America CY - Washington, DC AN - OPUS4-32405 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CHAP A1 - Höhm, S. A1 - Rohloff, M. A1 - Krüger, Jörg A1 - Bonse, Jörn A1 - Rosenfeld, A. ED - Sakabe, S. ED - Lienau, C. ED - Grunwald, R. T1 - Formation of laser-induced periodic surface structures (LIPSS) on dielectrics and semiconductors upon double-femtosecond laser pulse irradiation sequences N2 - The formation of laser-induced periodic surface structures (LIPSS) on different materials (silicon, fused silica, quartz) with linearly polarized fs-laser irradiation is studied experimentally. In dielectrics, the importance of transient excitation stages in the LIPSS formation is demonstrated by using (multiple) cross-polarized double-fs-laser-pulse irradiation sequences. A characteristic decrease of the spatial LIPSS periods is observed for double-pulse delays of less than 2 ps along with a characteristic 90°-rotation of the LIPSS orientation. PY - 2015 SN - 978-3-319-12216-8 SN - 978-3-319-12217-5 U6 - https://doi.org/10.1007/978-3-319-12217-5_5 SN - 2192-1970 N1 - Serientitel: Nano-Optics and Nanophotonics – Series title: Nano-Optics and Nanophotonics SP - Chapter 5, 85 EP - 99 PB - Springer AN - OPUS4-32541 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -