TY - CHAP A1 - Beke, S. A1 - Sugioka, K. A1 - Midorikawa, K. A1 - Bonse, Jörn ED - Hemsworth, E.J. T1 - Nanosecond and femtosecond laser ablation of TeO2 crystals: surface characterization and plasma analysis N2 - Near-IR femtosecond (fs) (pulse duration = 150 fs, wavelength = 775 um, Repetition rate 1 kHz) and VUV nanosecond (ns) (pulse duration = 20 ns, wavelength = 157 nm, repetition rate 1 to 5 Hz) laser pulse ablation of single-crystalline TeO? (c-Te02) surfaces was performed in air using the direct focusing technique. A multi-method characterization using optical microscopy, atomic force microscopy and scanning electron microscopy revealed the surface morphology of the ablated craters. This allowed us at each irradiation site to characterize precisely the lateral and vertical dimensions of the laser-ablated craters for different laser pulse energies and number of laser pulses per spot. Based on the obtained information, we quantitatively determined the Ablation threshold fluence for the fs laser irradiation when different pulse numbers were applied to the same spot using two independent extrapolation techniques. We found that in the case of NIR fs laser pulse irradiation, the ablation threshold significantly depends on the number of laser pulses applied to the same spot indicating that incubation effects play an important role in this material. In the case of VUV ns laser pulses, the ablation rate is significantly higher due to the high photon energy and the predominantly linear absorption in the material. These results are discussed on the basis of recent models of the interaction of laser pulses with dielectrics. In the second part of this chapter, we use timeof-flight mass spectrometry (TOFMS) to analyze the elemental composltion of the ablation products generated upon laser irradiation of c-Te02 with single fs- (pulse duration ~ 200 fs, wavelength 398 nm) and ns-pulses (pulse duration 4 ns, wavelength 355 nm). Due to the three Order of magnitude different peak intensities of the ns- and fs laser pulses, significant differences were observed regarding the laser-induced species in the plasma plume. Positive singly, doubly and triply charged Te ions (Te+, Te2+, Te3+) in the form of many different isotopes were observed in case of both irradiations. In the case of the ns-laser ablation, the TeO+ formation was negligible compared to the fs case and there was no Te trimer (Te3+) formation observed. It was found that the amplitude of Te ion Signals strongly depends on the applied laser pulse energy. Singly charged Oxygen ions (0+) are always present as a byproduct in both kinds of laser ablation. KW - Femtosecond laser ablation KW - Nanosecond laser ablation KW - Damage threshold KW - TeO2 KW - Dielectrics KW - Time-of-flight mass spectrometry (TOF-MS) PY - 2011 SN - 978-1-61324-851-5 N1 - Serientitel: Physics Research and Technology – Series title: Physics Research and Technology IS - Chapter 4 SP - 77 EP - 96 PB - Nova Science Publishers, Inc. AN - OPUS4-25465 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Rosenfeld, A. A1 - Krüger, Jörg ED - Panchenko, V. ED - Mourou, G. ED - Zheltikov, A. M. T1 - Femtosecond laser-induced periodic surface structures: recent approaches to explain their sub-wavelength periodicities N2 - The formation of laser-induced periodic surface structures (LIPSS) upon irradiation of semiconductors and dielectrics by linearly polarized high-intensity Ti:sapphire fs-laser pulses (τ ~100 fs, λ ~800 nm) is studied experimentally and theoretically. In the experiments, two different types of LIPSS exhibiting very different spatial periods are observed (socalled LSFL – low spatial frequency LIPSS, and HSFL - high spatial frequency LIPSS), both having a different dependence on the incident laser fluence and pulse number per spot. The experimental results are analyzed by means of a new theoretical approach, which combines the generally accepted LIPSS theory of J. E. Sipe and co-workers [Phys. Rev. B 27, 1141-1154 (1983)] with a Drude model, in order to account for transient changes of the optical properties of the irradiated materials. The joint Sipe-Drude model is capable of explaining numerous aspects of fs-LIPSS formation, i.e., the orientation of the LIPSS, their fluence dependence as well as their spatial periods. The latter aspect is specifically demonstrated for silicon crystals, which show experimental LSFL periods Λ somewhat smaller than λ. This behaviour is caused by the excitation of surface plasmon polaritons, SPP, (once the initially semiconducting material turns to a metallic state upon formation of a dense free-electron-plasma in the material) and the subsequent interference between its electrical fields with that of the incident laser beam, resulting in a spatially modulated energy deposition at the surface. Upon multi-pulse irradiation, a feedback mechanism, caused by the redshift of the resonance in a grating-assisted SPP excitation, is further reducing the LSFL spatial periods. The SPP-based mechanism of LSFL successfully explains the remarkably large range of LSFL periods between ~0.6 λ and λ. T2 - LAT 2010 - International Conference on Lasers, Applications, and Technologies CY - Kazan, Russia DA - 23.08.2010 KW - Femtosecond laser ablation KW - Laser-induced periodic surface structures (LIPSS) KW - Surface plasmon polaritons KW - Second harmonic generation (SHG) KW - Silicon KW - Semiconductors KW - Dielectrics PY - 2011 U6 - https://doi.org/10.1117/12.879813 SN - 0277-786X N1 - Serientitel: Proceedings of SPIE – Series title: Proceedings of SPIE VL - 7994 SP - 79940M-1 EP - 79940M-10 CY - Bellingham, USA AN - OPUS4-23291 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -