TY - CONF A1 - Florian, Camilo A1 - Deziel, J.-L. A1 - Kirner, Sabrina V. A1 - Siegel, J. A1 - Bonse, Jörn T1 - Femtosecond laser-induced oxidation in the formation of periodic surface structures N2 - Micro- and nanostructuring with laser-induced periodic surface structures (LIPSS) has been demonstrated to be feasible in a wide variety of materials including metals, semiconductors and dielectrics. Suitable processing regimes for flat, curved and complex surfaces have been identified for many materials, allowing the generation of diverse applications in fields such as optics, tribology and medicine, to name a few. A common side effect when producing such structures in air environment is the formation of a thin surface oxide layer in the laser irradiated areas. Previous studies have shown that oxidation plays an important role in the tribological performance for which the structures where created, and very recently it has been shown that the laser-induced oxide graded layers may contribute to the formation of a new type of embedded low-spatial frequency LIPSS (LSFL) with annomalous orientation parallel to the laser polarization, in addition to the appearance of the well-known high-spatial frequency LIPSS (HSFL) at the surface. In this contribution, we explore this effect experimentally for chromium nitride (CrN) irradiated with femtosecond laser pulses and compare the findings to finite-difference time-domain (FDTD) simulations of the intensity distributions at different depth positions. T2 - 2021 Conference on Lasers and Electro-Optics/Europe – European Quantum Electronics Virtual Conferences CY - Munich, Germany DA - 21.06.2021 KW - Femtosecond laser ablation KW - Finite-difference time-domain calculations KW - Laser-induced periodic surface structures (LIPSS) KW - Surface oxidation PY - 2021 SN - 978-1-6654-1876-8 U6 - https://doi.org/10.1109/CLEO/Europe-EQEC52157.2021.9542774 VL - 2021 SP - 1 PB - Institute of Electrical and Electronics Engineers (IEEE) CY - Piscataway, NJ, USA AN - OPUS4-53457 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Legall, Herbert A1 - Schwanke, Christoph A1 - Bonse, Jörn A1 - Krüger, Jörg T1 - X-ray emission during ultrashort pulse laser processing N2 - The industrial use of ultrashort laser pulses has made considerable progress in recent years. The reasons for this lie in the availability of high average powers at pulse repetition rates in the several 100 kHz range. The advantages of using ultrashort laser pulses in terms of processing precision can thus be fully exploited. However, high laser intensities on the workpiece can also lead to the generation of unwanted X-rays. Even if the emitted X-ray dose per pulse is low, the accumulated X-ray dose can become significant for high-repetition-rate laser systems so that X-ray exposure safety limits must be considered. The X-ray emission during ultrashort pulse laser processing was investigated for a pulse duration of 925 fs at 1030 nm wavelength and 400 kHz repetition rate. Industrially relevant materials such as steel,aluminum and glass were treated. Tungsten served as reference. X-ray spectra were recorded, and X-ray dose measurements were performed for laser treatment in air. For laser intensities > 2 × 10^13 W/cm2, X-ray doses exceeding the regulatory exposure limits for members of the public were found. Suitable X-ray protection strategies are proposed. T2 - SPIE Photonics West CY - San Francisco, USA DA - 02.02.2019 KW - Laser-induced X-ray emission KW - Ultrashort laser material interaction KW - Radiation protection PY - 2019 SN - 978-1-5106-2459-7 U6 - https://doi.org/10.1117/12.2516165 SN - 0277-786X SN - 1996-756X VL - 10908 SP - 1090802-1 EP - 1090802-7 PB - SPIE - The international society for optics and photonics CY - Bellingham, WA, USA AN - OPUS4-47510 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Schmid, M. A1 - Heidmann, B. A1 - Ringleb, F. A1 - Eylers, K. A1 - Ernst, O. A1 - Andree, Stefan A1 - Bonse, Jörn A1 - Boeck, T. A1 - Krüger, Jörg T1 - Locally grown Cu(In,Ga)Se2 micro islands for concentrator solar cells N2 - Light concentration opens up the path to enhanced material efficiency of solar cells via increased conversion efficiency and decreased material requirement. For true material saving, a fabrication method allowing local growth of high quality absorber material is essential. We present two scalable fs-laser based approaches for bottom-up growth of Cu(In,Ga)Se2 micro islands utilizing either site-controlled assembly of In(,Ga) droplets on laser-patterned substrates during physical vapor deposition, or laser-induced forward transfer of (Cu,In,Ga) layers for local precursor arrangement. The Cu(In,Ga)Se2 absorbers formed after selenization can deliver working solar devices showing efficiency enhancement under light concentration. T2 - SPIE OPTO, 2018 CY - San Francisco, USA DA - 29.01.2018 KW - Chalcopyrite KW - Cu(In,Ga)Se2 KW - Fs-laser patterning KW - Laser-induced forward transfer KW - Micro solar cell PY - 2018 SN - 978-1-5106-1540-3 SN - 0277-786X SN - 1996-756X VL - 10527 SP - 1052707-1 EP - 1052707-9 PB - SPIE CY - Bellingham, WA, USA AN - OPUS4-44450 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -