TY - GEN A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Kautek, Wolfgang A1 - Wrobel, J. M. T1 - Femtosecond pulse laser machining of InP wafers N2 - Ablation of indium phosphide wafers in air was performed with 130 fs laser pulses at a wavelength of 800 nm at a low repetition rate of 10 Hz. In order to evaluate the role of the incubation effects, the relationship between the number of laser pulses used for the ablation and the threshold fluence was studied. Particular attention was paid to the chemical composition, surface morphology and structural variations of the ablated area. T2 - 5th Laser Applications in Microelectronics and Optoelectronics Manufacturing Conference (LAMOM) CY - San José, CA, USA DA - 240.01.2000 KW - Femtosecond laser ablation KW - Indium phosphide KW - Auger electron spectroscopy PY - 2000 SN - 0-8194-3550-3 SN - 1605-7422 N1 - Serientitel: SPIE proceedings series – Series title: SPIE proceedings series IS - 3933 SP - 280 EP - 287 PB - SPIE CY - Bellingham, Wash. AN - OPUS4-937 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -