TY - GEN A1 - Bonse, Jörn A1 - Baudach, Steffen A1 - Krüger, Jörg A1 - Kautek, Wolfgang ED - Phipps, C. T1 - Femtosecond laser micromachining of technical materials N2 - Micromachining experiments were performed with Ti:sapphire laser pulses (130 fs - 150 fs, 800 nm, approximately 10 Hz) in air. Employing the direct focusing technique, highly absorbing titanium nitride (TiN) and weakly absorbing polyimide (PI) and polymethylmethacrylate (PMMA) served as target materials. The lateral and vertical precision of the laser ablation and morphological features were characterized by scanning force (SFM), scanning electron (SEM) and optical microscopy. For TiN, incubation can be observed, i.e. the single-pulse surface damage threshold (0.26 J/cm2) is by a factor of two greater than the threshold for 100 pulses. Ablation rates below 10 nm per pulse can be achieved. The evolution of sub-wavelength ripples is presented in dependence on pulse number and laser fluence, respectively. The incubation behavior of the polymers can be described by an accumulation model as for TiN. Experiments on PI with varying focal lengths result in the same modification thresholds. Different polarization states of light (linear, circular) lead to a variation of the ablation rate and to various morphological patterns in the ablation craters (wavelength ripples, cones). Swelling of PMMA occurred at fluences below the ablation threshold. T2 - 3rd SPIE's International Conference on High-Power Laser Ablation CY - Santa Fe, NM, USA DA - 24.04.2000 KW - Ablation KW - Femtosecond pulse laser KW - Laser processing KW - Micromachining KW - Polymer KW - Titanium nitride KW - Ripples PY - 2000 SN - 0-8194-3700-X U6 - https://doi.org/10.1117/12.407346 SN - 1605-7422 N1 - Serientitel: SPIE proceedings series – Series title: SPIE proceedings series IS - 4065 SP - 161 EP - 172 PB - SPIE CY - Bellingham, Wash. AN - OPUS4-967 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Kautek, Wolfgang A1 - Wrobel, J. M. T1 - Femtosecond pulse laser machining of InP wafers N2 - Ablation of indium phosphide wafers in air was performed with 130 fs laser pulses at a wavelength of 800 nm at a low repetition rate of 10 Hz. In order to evaluate the role of the incubation effects, the relationship between the number of laser pulses used for the ablation and the threshold fluence was studied. Particular attention was paid to the chemical composition, surface morphology and structural variations of the ablated area. T2 - 5th Laser Applications in Microelectronics and Optoelectronics Manufacturing Conference (LAMOM) CY - San José, CA, USA DA - 240.01.2000 KW - Femtosecond laser ablation KW - Indium phosphide KW - Auger electron spectroscopy PY - 2000 SN - 0-8194-3550-3 SN - 1605-7422 N1 - Serientitel: SPIE proceedings series – Series title: SPIE proceedings series IS - 3933 SP - 280 EP - 287 PB - SPIE CY - Bellingham, Wash. AN - OPUS4-937 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Krüger, Jörg A1 - Bonse, Jörn A1 - Baudach, Steffen A1 - Kautek, Wolfgang A1 - Lenzner, M. A1 - Wrobel, J. M. T1 - Femtosecond-Pulse Laser Machining of Semiconducting Materials N2 - Summary form only given. Machining investigations of crystalline silicon have been performed with laser pulses at a wavelength of 780 nm in the range between 5 fs and 400 fs. Applying 100 pulses per spot, surface damage thresholds were determined by the measurement of the damage diameter. In this pulse duration regime, the threshold fluences were nearly constant. Single-pulse investigations with 5 fs pulses yielded a value of about 0.15 J cm-2 identical to the multi-pulse experiment. This is in contradiction to the behaviour of dielectrics where incubation effects alter the optical properties down to the 5 fs pulse regime. Employing laser pulses with a duration of 130 fs at a wavelength of 800 nm, single-pulse ablation thresholds of 0.23 J cm-2 and 0.16 J cm-2 were determined for Si and InP in air, respectively. The threshold fluence was calculated from the linear relation between the square of the diameters versus the logarithm of the laser fluences. T2 - CLEO/Europe 2000 ; Conference on Lasers and Electro-Optics Europe ; Conférence Européenne sur les Lasers et l'Electro-Optique ; CLEO/Europe-IQEC CY - Nice, France DA - 2000-09-10 PY - 2000 SN - 0-7803-6319-1 U6 - https://doi.org/10.1109/CLEOE.2000.910410 PB - IEEE Service Center CY - Piscataway, NJ AN - OPUS4-958 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Munz, Martin A1 - Sturm, Heinz ED - Vajtai, R. T1 - Scanning force microscopic investigations of the femtosecond pulse laser ablation of indium phosphide in air N2 - Laser ablation of single-crystalline indium phosphide (InP) was performed in air by means of linearly polarized Ti:sapphire femtosecond-pulses (800 nm, 130 fs, 10 Hz). As a result of the first laser pulses, several morphological changes (crater formation, rim formation, ripple structures and cones) were observed. These effects were explored using force modulation microscopy (FMM), a technique based on scanning force microscopy (SFM), allowing the simultaneous imaging of both topography and local stiffness at a high lateral resolution. The first laser pulse induces the formation of a protruding rim (height <20 nm, width ~300 nm) bordering the ablated crater. A Fourier-analysis of the multi-pulse generated topographies reveals the formation of wavelength-sized periodic ripples (modulation depth <100 nm) with an orientation perpendicular to that of the electric field vector of the laser radiation. Besides these morphological alterations, also material modifications were observed in the irradiated regions by means of the FFM technique. Within the ablated craters, local stiffness variations were found revealing an inhomogeneous material composition/structure as a consequence of the femtosecond pulse laser treatment. T2 - Nanotechnology Conference 2003 CY - Maspalomas, Gran Canaria, Spain DA - 2003-05-19 KW - Femtosecond laser irradiation KW - Microstructure KW - Indium phosphide KW - Scanning/atomic force microscopy (SFM/AFM) KW - Stiffness KW - Laser induced periodic surface structures (LIPSS) PY - 2003 UR - http://cat.inist.fr/?aModele=afficheN&cpsidt=15329222 SN - 0-8194-4978-4 N1 - Serientitel: SPIE proceedings series – Series title: SPIE proceedings series IS - 5118 SP - 221 EP - 234 PB - SPIE, the International Society for Optical Engineering CY - Bellingham, Wash. AN - OPUS4-2865 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Rudolph, Pascale A1 - Krüger, Jörg A1 - Baudach, Steffen A1 - Kautek, Wolfgang T1 - Femtosecond pulse laser processing of TiN on silicon N2 - Ultrashort pulse laser microstructuring (pulse duration 130 fs, wavelength 800 nm, repetition rate 2 Hz) of titanium nitride (TiN) films on silicon substrates was performed in air using the direct focusing technique. The lateral and vertical precision of laser ablation was evaluated. The TiN ablation threshold changed with the number of pulses applied to the surface due to an incubation effect. An ablation depth per pulse below the penetration depth of light was observed. Columnar structures were formed in the silicon substrate after drilling through the TiN layer. KW - Femtosecond laser ablation KW - Titanium nitride KW - Silicon KW - Optical properties PY - 2000 U6 - https://doi.org/10.1016/S0169-4332(99)00481-X SN - 0169-4332 SN - 1873-5584 VL - 154-155 SP - 659 EP - 663 PB - North-Holland CY - Amsterdam AN - OPUS4-802 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Baudach, Steffen A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Kautek, Wolfgang T1 - Ultrashort pulse laser ablation of polycarbonate and polymethylmethacrylate N2 - Ablation experiments with ultrashort laser pulses (pulse duration 150 fs, wavelength 800 nm) on polymers (PC, PMMA) relevant for biomedical technology have been performed in air. The lateral and vertical machining precision was evaluated by optical, atomic force and scanning electron microscopy. The ablation threshold reaches values in the range of 0.5–2.5 J/cm2 and depends significantly on the number of laser pulses applied to the same spot. The hole diameters are influenced by the laser fluence and the number of laser pulses. The relation between the ablation threshold and the number of laser pulses applied to the same spot is described in accordance with an incubation model. KW - Femtosecond laser ablation KW - Polymer KW - Polycarbonate KW - Polymethylmethacrylate PY - 2000 U6 - https://doi.org/10.1016/S0169-4332(99)00474-2 SN - 0169-4332 SN - 1873-5584 VL - 154-155 SP - 555 EP - 560 PB - North-Holland CY - Amsterdam AN - OPUS4-803 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Brzezinka, Klaus-Werner A1 - Meixner, A.J. T1 - Modifying single-crystalline silicon by femtosecond laser pulses: an analysis by micro Raman spectroscopy, scanning laser microscopy and atomic force microscopy N2 - The surface modification of single-crystalline silicon induced by single 130 femtosecond (fs) Ti:sapphire laser pulses (wavelength 800 nm) in air is investigated by means of micro Raman spectroscopy (?-RS), atomic force microscopy and scanning laser microscopy. Depending on the laser fluence, in some regions the studies indicate a thin amorphous top-layer as well as ablated and recrystallized zones. The single-pulse threshold fluences for melting, ablation and polycrystalline recrystallization are determined quantitatively. Several different topographical surface structures (rims and protrusions) are found. Their formation is discussed in the context of recent studies of the laser irradiation of silicon. In combination with a thin-film optical model, the thickness of the amorphous layer is determined by two independent and nondestructive optical methods to be in the order of several 10 nm. KW - Femtosecond laser ablation KW - Silicon KW - Raman spectroscopy KW - Atomic force microscopy KW - Laser scanning microscopy PY - 2004 U6 - https://doi.org/10.1016/S0169-4332(03)00881-X SN - 0169-4332 SN - 1873-5584 VL - 221 IS - 1-4 SP - 215 EP - 230 PB - North-Holland CY - Amsterdam AN - OPUS4-3224 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Sturm, Heinz A1 - Schmidt, Dieter A1 - Kautek, Wolfgang T1 - Chemical, morphological and accumulation phenomena in ultrashort-pulse laser ablation of TiN in air N2 - Ultrashort-pulse laser ablation (F=130 fs, 5=800 nm, repetition rate 2-20 Hz) of titanium nitride was investigated for laser fluences between 0.3 and 4.5 J/cm2 using the direct focusing technique in air. The influence of the laser pulse number and the peak fluence was investigated by means of several surface analytical techniques (optical microscopy, dynamic friction atomic force microscopy, scanning Auger electron microscopy and small-spot electron spectroscopy for chemical analysis). The correlation of the results about optical, physical and chemical properties of the irradiated areas allows us to propose a simple oxidation model, which explains different observed phenomena associated with surface damage such as mound formation and crater widening and clarifies the incubation behavior reported earlier for this material. PY - 2000 U6 - https://doi.org/10.1007/s003390000585 SN - 0947-8396 VL - 71 IS - 6 SP - 657 EP - 665 PB - Springer CY - Berlin AN - OPUS4-1067 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Wrobel, Jerzy A1 - Krüger, Jörg A1 - Kautek, Wolfgang T1 - Ultrashort-pulse laser ablation of indium phosphide in air N2 - Ablation of indium phosphide wafers in air was performed with low repetition rate ultrashort laser pulses (130 fs, 10 Hz) of 800 nm wavelength. The relationships between the dimensions of the craters and the ablation parameters were analyzed. The ablation threshold fluence depends on the number of pulses applied to the same spot. The single-pulse ablation threshold value was estimated to be fth(1)=0.16 J/cm2. The dependence of the threshold fluence on the number of laser pulses indicates an incubation effect. Morphological and chemical changes of the ablated regions were characterized by means of scanning electron microscopy and Auger electron spectroscopy. PY - 2001 U6 - https://doi.org/10.1007/s003390000596 SN - 0947-8396 VL - 72 IS - 1 SP - 89 EP - 94 PB - Springer CY - Berlin AN - OPUS4-1068 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Baudach, Steffen A1 - Kautek, Wolfgang A1 - Geuss, Markus A1 - Sturm, Heinz T1 - The precision of the femtosecond-pulse laser ablation of TiN films on silicon N2 - Ti:sapphire laser pulses of 130 fs and 800 nm were focused on 3.2-7m-thick TiN films by a 60-mm focal length lens in air. The morphology of the ablated areas generated by laser pulses at a fluence slightly above the ablation threshold was characterized in dependence on the pulse number by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The cavity profiles, depths, diameters, and volumes were quantitatively evaluated by AFM. The polarization state of the laser light is discussed as a further parameter, in addition to fluence and pulse number, that influences and controls the ablation precision of these materials. It was observed that circularly polarized radiation enhances the average ablation rates and reduces the roughness in the cavities by a factor of 2-3 as compared to linearly polarized radiation of the same incident laser fluence. Special attention was paid to the interfacial region between the coating and substrate. Ultrashort-pulse laser drilling into the Si substrate revealed the generation of columnar features which even may surmount the original coating under laser conditions. T2 - 5th International Conference on Laser Ablation ; COLA '99 CY - Göttingen, Germany DA - 1999-07-19 KW - Laser ablation KW - Picosecond PY - 1999 U6 - https://doi.org/10.1007/s003390051425 SN - 0947-8396 VL - 69 IS - 7 SP - S399 EP - S402 PB - Springer CY - Berlin AN - OPUS4-778 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -