TY - JOUR A1 - Bonse, Jörn A1 - Rudolph, Pascale A1 - Krüger, Jörg A1 - Baudach, Steffen A1 - Kautek, Wolfgang T1 - Femtosecond pulse laser processing of TiN on silicon N2 - Ultrashort pulse laser microstructuring (pulse duration 130 fs, wavelength 800 nm, repetition rate 2 Hz) of titanium nitride (TiN) films on silicon substrates was performed in air using the direct focusing technique. The lateral and vertical precision of laser ablation was evaluated. The TiN ablation threshold changed with the number of pulses applied to the surface due to an incubation effect. An ablation depth per pulse below the penetration depth of light was observed. Columnar structures were formed in the silicon substrate after drilling through the TiN layer. KW - Femtosecond laser ablation KW - Titanium nitride KW - Silicon KW - Optical properties PY - 2000 U6 - https://doi.org/10.1016/S0169-4332(99)00481-X SN - 0169-4332 SN - 1873-5584 VL - 154-155 SP - 659 EP - 663 PB - North-Holland CY - Amsterdam AN - OPUS4-802 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Baudach, Steffen A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Kautek, Wolfgang T1 - Ultrashort pulse laser ablation of polycarbonate and polymethylmethacrylate N2 - Ablation experiments with ultrashort laser pulses (pulse duration 150 fs, wavelength 800 nm) on polymers (PC, PMMA) relevant for biomedical technology have been performed in air. The lateral and vertical machining precision was evaluated by optical, atomic force and scanning electron microscopy. The ablation threshold reaches values in the range of 0.5–2.5 J/cm2 and depends significantly on the number of laser pulses applied to the same spot. The hole diameters are influenced by the laser fluence and the number of laser pulses. The relation between the ablation threshold and the number of laser pulses applied to the same spot is described in accordance with an incubation model. KW - Femtosecond laser ablation KW - Polymer KW - Polycarbonate KW - Polymethylmethacrylate PY - 2000 U6 - https://doi.org/10.1016/S0169-4332(99)00474-2 SN - 0169-4332 SN - 1873-5584 VL - 154-155 SP - 555 EP - 560 PB - North-Holland CY - Amsterdam AN - OPUS4-803 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Brzezinka, Klaus-Werner A1 - Meixner, A.J. T1 - Modifying single-crystalline silicon by femtosecond laser pulses: an analysis by micro Raman spectroscopy, scanning laser microscopy and atomic force microscopy N2 - The surface modification of single-crystalline silicon induced by single 130 femtosecond (fs) Ti:sapphire laser pulses (wavelength 800 nm) in air is investigated by means of micro Raman spectroscopy (?-RS), atomic force microscopy and scanning laser microscopy. Depending on the laser fluence, in some regions the studies indicate a thin amorphous top-layer as well as ablated and recrystallized zones. The single-pulse threshold fluences for melting, ablation and polycrystalline recrystallization are determined quantitatively. Several different topographical surface structures (rims and protrusions) are found. Their formation is discussed in the context of recent studies of the laser irradiation of silicon. In combination with a thin-film optical model, the thickness of the amorphous layer is determined by two independent and nondestructive optical methods to be in the order of several 10 nm. KW - Femtosecond laser ablation KW - Silicon KW - Raman spectroscopy KW - Atomic force microscopy KW - Laser scanning microscopy PY - 2004 U6 - https://doi.org/10.1016/S0169-4332(03)00881-X SN - 0169-4332 SN - 1873-5584 VL - 221 IS - 1-4 SP - 215 EP - 230 PB - North-Holland CY - Amsterdam AN - OPUS4-3224 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Wrobel, J. M. A1 - Brzezinka, Klaus-Werner A1 - Esser, N. A1 - Kautek, Wolfgang T1 - Femtosecond laser irradiation of indium phosphide in air: Raman spectroscopic and atomic force microscopic investigations KW - Femtosecond laser ablation KW - Indium phosphide KW - Raman spectroscopy KW - Atomic force microscopy PY - 2002 SN - 0169-4332 SN - 1873-5584 VL - 202 SP - 272 EP - 282 PB - North-Holland CY - Amsterdam AN - OPUS4-2645 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Höhm, S. A1 - Rosenfeld, A. T1 - Femtosecond laser-induced periodic surface structures N2 - The formation of laser-induced periodic surface structures (LIPSS) in different materials (metals, semiconductors, and dielectrics) upon irradiation with linearly polarized fs-laser pulses (τ~30–150 fs, λ~800 nm) in air environment is studied experimentally and theoretically. In metals, predominantly low-spatial-frequency-LIPSS with periods close to the laser wavelength λ are observed perpendicular to the polarization. Under specific irradiation conditions, high-spatial-frequency-LIPSS with sub-100-nm spatial periods (~λ/10) can be generated. For semiconductors, the impact of transient changes of the optical properties to the LIPSS periods is analyzed theoretically and experimentally. In dielectrics, the importance of transient excitation stages in the LIPSS formation is demonstrated experimentally using (multiple) double-fs-laser-pulse irradiation sequences. A characteristic decrease of the LIPSS periods is observed for double-pulse delays of less than 2 ps. KW - Laser-induced periodic surface structures (LIPSS) KW - Femtosecond laser ablation KW - Ultrafast optical techniques KW - Silicon KW - Titanium KW - Silica PY - 2012 U6 - https://doi.org/10.2351/1.4712658 SN - 1042-346X SN - 1938-1387 VL - 24 IS - 4 SP - 042006-1 EP - 042006-7 PB - Laser Institute of America CY - Orlando, Fla., USA AN - OPUS4-26198 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Höhm, S. A1 - Rosenfeld, A. A1 - Krüger, Jörg A1 - Bonse, Jörn T1 - Area dependence of femtosecond laser-induced periodic surface structures for varying band gap materials after double pulse excitation N2 - The formation of laser-induced periodic surface structures upon irradiation of titanium, silicon, and fused silica with multiple irradiation sequences consisting of parallel polarized Ti:sapphire femtosecond laser pulse pairs (pulse duration 50–150 fs, central wavelength ~800 nm) is studied experimentally. The temporal delay between the individual near-equal energy fs-laser pulses was varied between 0 and 5 ps with a temporal resolution of better than 0.2 ps. The surface morphology of the irradiated surface areas is characterized by means of scanning electron microscopy (SEM). In all materials a decrease of the rippled surface area is observed for increasing delays. The characteristic delay decay scale is quantified and related to material dependent excitation and energy relaxation processes. KW - Laser-induced periodic surface structures (LIPSS) KW - Femtosecond laser ablation KW - Double-pulse experiments KW - Ultrafast optical techniques KW - Mach-Zehnder interferometer PY - 2013 U6 - https://doi.org/10.1016/j.apsusc.2012.10.188 SN - 0169-4332 SN - 1873-5584 VL - 278 SP - 7 EP - 12 PB - North-Holland CY - Amsterdam AN - OPUS4-28601 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Rosenfeld, A. A1 - Rohloff, M. A1 - Höhm, S. A1 - Krüger, Jörg A1 - Bonse, Jörn T1 - Formation of laser-induced periodic surface structures on fused silica upon multiple parallel polarized double-femtosecond-laser-pulse irradiation sequences N2 - The formation of laser-induced periodic surface structures (LIPSS) upon irradiation of fused silica with multiple irradiation sequences of parallel polarized Ti:sapphire femtosecond laser pulse pairs (160 fs pulse duration, 800 nm central wavelength) was studied experimentally. For that purpose, a Michelson interferometer was used to generate near-equal-energy double-pulse sequences allowing the temporal pulse delay between the parallel-polarized individual fs-laser pulses to be varied between 0 and 40 ps with ~0.2 ps temporal resolution. The surface morphologies of the irradiated surface areas were characterized by means of scanning electron and scanning force microscopy. In the sub-ps delay range a strong decrease of the LIPSS periods and the ablation crater depths with the double-pulse delay was observed indicating the importance of the laser-induced free-electron plasma in the conduction band of the solids for the formation of LIPSS. KW - Laser-induced periodic surface structures (LIPSS) KW - Femtosecond laser ablation KW - Double-pulse experiments KW - Fused silica KW - Michelson interferometer PY - 2012 U6 - https://doi.org/10.1016/j.apsusc.2011.09.076 SN - 0169-4332 SN - 1873-5584 VL - 258 IS - 23 SP - 9233 EP - 9236 PB - North-Holland CY - Amsterdam AN - OPUS4-26226 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Beke, S. A1 - Sugioka, K. A1 - Midorikawa, K. A1 - Péter, Á. A1 - Nánai, L. A1 - Bonse, Jörn T1 - Characterization of the ablation of TeO2 crystals in air with femtosecond laser pulses N2 - Femtosecond (fs) laser pulse ablation (pulse duration of 150 fs, wavelength of 775 nm, repetition rate of 1 kHz) of single-crystalline TeO2 surfaces was performed in air using the direct focusing technique. The lateral and vertical dimensions of laser ablated craters as well as the laser damage thresholds were evaluated for different pulse numbers applied to the same spot. The joint observation using optical microscopy, atomic force microscopy and scanning electron microscopy revealed the surface morphology of the ablated craters and also showed that the ablation threshold depends significantly on the number of laser pulses applied to the same spot due to incubation effects. The incubation effects change the absorption processes involved in fs-laser ablation of the transparent material from multiphoton absorption to a single-photon absorption. These results are discussed on the basis of recent models of the interaction of fs-laser pulses with dielectrics. KW - Femtosecond laser ablation KW - Damage threshold KW - TeO2 KW - Dielectrics PY - 2010 U6 - https://doi.org/10.1088/0022-3727/43/2/025401 SN - 0022-3727 SN - 1361-6463 VL - 43 IS - 2 SP - 025401-1 - 025401-6 PB - IOP Publ. CY - Bristol AN - OPUS4-20665 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Krüger, Jörg T1 - Probing the heat affected zone by chemical modifications in femtosecond pulse laser ablation of titanium nitride films in air N2 - A new approach is presented to quantify the so-called "heat affected zone" (HAZ) during femtosecond laser pulse processing. Ablation of titanium nitride (TiN) thin films (~3 μm thickness) by multiple femtosecond laser pulses (τ=130 fs, λ=800 nm) in air environment was studied by means of two different surface analytical methods both being sensitive to chemical alterations at the surface. Scanning Auger electron microscopy was applied for a visualization of the spatial distribution of specific elements (Ti, O) within the laser-modified areas. The chemical state of the irradiated surface was revealed by complementary x-ray photoelectron spectroscopy. Both methods were used for a depth-profiling chemical analysis (tracking the elements Ti, N, O, and C) using an Ar-ion beam for surface sputtering. In a narrow laser fluence range slightly below the ablation threshold of TiN significant superficial oxidation can be observed leading to the formation of substoichiometric TiO2-x. At fluences above the ablation threshold, an increased titanium concentration is observed within the entire ablation craters. Following upon sputter removal the elemental distribution into the depth of the nonablated material, the results allow an estimation of the heat-affected zone for femtosecond laser ablation in air environment. According to our analyses, the HAZ extends up to a few hundreds of nanometers into the nonablated material. KW - Femtosecond laser ablation KW - Heat affected zone KW - Titanium nitride KW - Scanning Auger electron microscopy KW - X-ray KW - Photoelektron spectroscopy PY - 2010 UR - http://link.aip.org/link/?JAP/107/054902 U6 - https://doi.org/10.1063/1.3311552 SN - 0021-8979 SN - 1089-7550 VL - 107 IS - 5 SP - 054902-1 - 054902-5 PB - American Institute of Physics CY - Melville, NY AN - OPUS4-20949 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Puerto, D. A1 - Siegel, J. A1 - Gawelda, W. A1 - Galvan-Sosa, M. A1 - Ehrentraut, L. A1 - Bonse, Jörn A1 - Solis, J. T1 - Dynamics of plasma formation, relaxation, and topography modification induced by femtosecond laser pulses in crystalline and amorphous dielectrics N2 - We have studied plasma formation and relaxation dynamics along with the corresponding topography modifications in fused silica and sapphire induced by single femtosecond laser pulses (800 nm and 120 fs). These materials, representative of high bandgap amorphous and crystalline dielectrics, respectively, require nonlinear mechanisms to absorb the laser light. The study employed a femtosecond time-resolved microscopy technique that allows obtaining reflectivity and transmission images of the material surface at well-defined temporal delays after the arrival of the pump pulse which excites the dielectric material. The transient evolution of the free-electron plasma formed can be followed by combining the time-resolved optical data with a Drude model to estimate transient electron densities and skin depths. The temporal evolution of the optical properties is very similar in both materials within the first few hundred picoseconds, including the formation of a high reflectivity ring at about 7 ps. In contrast, at longer delays (100 ps–20 ns) the behavior of both materials differs significantly, revealing a longer lasting ablation process in sapphire. Moreover, transient images of sapphire show a concentric ring pattern surrounding the ablation crater, which is not observed in fused silica. We attribute this phenomenon to optical diffraction at a transient elevation of the ejected molten material at the crater border. On the other hand, the final topography of the ablation crater is radically different for each material. While in fused silica a relatively smooth crater with two distinct regimes is observed, sapphire shows much steeper crater walls, surrounded by a weak depression along with cracks in the material surface. These differences are explained in terms of the most relevant thermal and mechanical properties of the material. Despite these differences the maximum crater depth is comparable in both material at the highest fluences used (16J/cm2). The evolution of the crater depth as a function of fluence can be described taking into account the individual bandgap of each material. KW - Femtosecond laser ablation KW - Plasma formation KW - Time-resolved microscopy KW - Dielectrics KW - Fused silica KW - Sapphire KW - Scanning force microscopy KW - Reflectivity measurements KW - Transmission measurements KW - Drude model PY - 2010 U6 - https://doi.org/10.1364/JOSAB.27.001065 SN - 0740-3224 SN - 1520-8540 VL - 27 IS - 5 SP - 1065 EP - 1076 PB - Optical Society of America CY - Washington, DC AN - OPUS4-21167 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -