TY - GEN A1 - Bonse, Jörn A1 - Baudach, Steffen A1 - Krüger, Jörg A1 - Kautek, Wolfgang ED - Phipps, C. T1 - Femtosecond laser micromachining of technical materials N2 - Micromachining experiments were performed with Ti:sapphire laser pulses (130 fs - 150 fs, 800 nm, approximately 10 Hz) in air. Employing the direct focusing technique, highly absorbing titanium nitride (TiN) and weakly absorbing polyimide (PI) and polymethylmethacrylate (PMMA) served as target materials. The lateral and vertical precision of the laser ablation and morphological features were characterized by scanning force (SFM), scanning electron (SEM) and optical microscopy. For TiN, incubation can be observed, i.e. the single-pulse surface damage threshold (0.26 J/cm2) is by a factor of two greater than the threshold for 100 pulses. Ablation rates below 10 nm per pulse can be achieved. The evolution of sub-wavelength ripples is presented in dependence on pulse number and laser fluence, respectively. The incubation behavior of the polymers can be described by an accumulation model as for TiN. Experiments on PI with varying focal lengths result in the same modification thresholds. Different polarization states of light (linear, circular) lead to a variation of the ablation rate and to various morphological patterns in the ablation craters (wavelength ripples, cones). Swelling of PMMA occurred at fluences below the ablation threshold. T2 - 3rd SPIE's International Conference on High-Power Laser Ablation CY - Santa Fe, NM, USA DA - 24.04.2000 KW - Ablation KW - Femtosecond pulse laser KW - Laser processing KW - Micromachining KW - Polymer KW - Titanium nitride KW - Ripples PY - 2000 SN - 0-8194-3700-X DO - https://doi.org/10.1117/12.407346 SN - 1605-7422 N1 - Serientitel: SPIE proceedings series – Series title: SPIE proceedings series IS - 4065 SP - 161 EP - 172 PB - SPIE CY - Bellingham, Wash. AN - OPUS4-967 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Kautek, Wolfgang A1 - Wrobel, J. M. T1 - Femtosecond pulse laser machining of InP wafers N2 - Ablation of indium phosphide wafers in air was performed with 130 fs laser pulses at a wavelength of 800 nm at a low repetition rate of 10 Hz. In order to evaluate the role of the incubation effects, the relationship between the number of laser pulses used for the ablation and the threshold fluence was studied. Particular attention was paid to the chemical composition, surface morphology and structural variations of the ablated area. T2 - 5th Laser Applications in Microelectronics and Optoelectronics Manufacturing Conference (LAMOM) CY - San José, CA, USA DA - 240.01.2000 KW - Femtosecond laser ablation KW - Indium phosphide KW - Auger electron spectroscopy PY - 2000 SN - 0-8194-3550-3 SN - 1605-7422 N1 - Serientitel: SPIE proceedings series – Series title: SPIE proceedings series IS - 3933 SP - 280 EP - 287 PB - SPIE CY - Bellingham, Wash. AN - OPUS4-937 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Krüger, Jörg A1 - Bonse, Jörn A1 - Baudach, Steffen A1 - Kautek, Wolfgang A1 - Lenzner, M. A1 - Wrobel, J. M. T1 - Femtosecond-Pulse Laser Machining of Semiconducting Materials N2 - Summary form only given. Machining investigations of crystalline silicon have been performed with laser pulses at a wavelength of 780 nm in the range between 5 fs and 400 fs. Applying 100 pulses per spot, surface damage thresholds were determined by the measurement of the damage diameter. In this pulse duration regime, the threshold fluences were nearly constant. Single-pulse investigations with 5 fs pulses yielded a value of about 0.15 J cm-2 identical to the multi-pulse experiment. This is in contradiction to the behaviour of dielectrics where incubation effects alter the optical properties down to the 5 fs pulse regime. Employing laser pulses with a duration of 130 fs at a wavelength of 800 nm, single-pulse ablation thresholds of 0.23 J cm-2 and 0.16 J cm-2 were determined for Si and InP in air, respectively. The threshold fluence was calculated from the linear relation between the square of the diameters versus the logarithm of the laser fluences. T2 - CLEO/Europe 2000 ; Conference on Lasers and Electro-Optics Europe ; Conférence Européenne sur les Lasers et l'Electro-Optique ; CLEO/Europe-IQEC CY - Nice, France DA - 2000-09-10 PY - 2000 SN - 0-7803-6319-1 DO - https://doi.org/10.1109/CLEOE.2000.910410 PB - IEEE Service Center CY - Piscataway, NJ AN - OPUS4-958 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Krüger, Jörg A1 - Bonse, Jörn A1 - Lenzner, Matthias T1 - Modification and Ablation of Semiconductors by Femtosecond Laser Pulses N2 - Physical and chemical phenomena resulting from irradiation of silicon and indium phosphide with ultrashort laser pulses (~100fs) were investigated with respect to the difference between single- and multiple-pulse treatment. In the single-pulse case, several processes were identified: modification, recrystallization and ablation. All processes exhibit a distinct treshold behaviour. A two photon-absorption coefficient can be determined from a single spatial ablation profile. Accumulation effects were observed for multi-pulse illumination. Different morphological features like bubbles, rippels and microcolumns were found. PY - 2002 VL - 5 IS - 2 SP - 437 EP - 461 PB - Transworld Research Network CY - Trivandrum AN - OPUS4-1585 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Bonse, Jörn A1 - Baudach, Steffen A1 - Krüger, Jörg A1 - Kautek, Wolfgang ED - Exarhos, G. T1 - Femtosecond laser damage in dielectric coatings N2 - Multi-shot investigations of Ti:sapphire laser (wavelength (lambda) approximately equals 800 nm) induced damage were performed in three different laboratories (BAM, Berlin; LZH, Hannover; UNM, Albuquerque). The ablation behavior of a high reflecting mirror consisting of alternating (lambda) /4- layers of Ta2O5 and SiO2 was studied. Fused silica served as substrate. The influence of the pulse duration ((tau) equals 13 - 130 fs), the pulse number (30 - (infinity) ) and the repetition rate (10 Hz - 100 MHz) on the damage threshold will be discussed. T2 - 32nd Annual Boulder Damage Symposium CY - Boulder, CO, USA DA - 2000-10-16 PY - 2001 SN - 0-8194-4036-1 DO - https://doi.org/10.1117/12.425056 SN - 1605-7422 N1 - Serientitel: SPIE proceedings series – Series title: SPIE proceedings series IS - 4347 SP - 24 EP - 34 PB - International Society for Optical Engineering (SPIE) CY - Bellingham, Wash. AN - OPUS4-6013 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Mann, Guido A1 - Krüger, Jörg A1 - Eberstein, M. A1 - Hainich, S. A1 - Marcinkowski, M. T1 - Femtosecond laser-induced removal of antireflection coatings from textured silicon wafers T2 - SiliconPV 2013, 3rd International Conference on Crystalline Silicon Photovoltaics CY - Hamelin, Germany DA - 2013-03-25 PY - 2013 AN - OPUS4-28049 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Nanostrukturierung mit Femtosekundenlaserpulsen T2 - Seminar "Laser in der Feinbearbeitung" des Laserverbundes Berlin Brandenburg e. V. CY - Brandenburg an der Havel, Germany DA - 2012-04-19 PY - 2012 AN - OPUS4-25681 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Höhm, S. A1 - Rosenfeld, A. T1 - Generation, Control and Mechanisms of the Formation of Periodic Surface Structures on the Nanometer Scale Induced by Femtosecond Laser Pulse Irradiation of Solids T2 - Julius Springer Forum for Applied Physics 2012 CY - Berlin, Germany DA - 2012-06-20 PY - 2012 AN - OPUS4-26141 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Höhm, S. A1 - Rosenfeld, A. T1 - Femtosecond laser-induced periodic nanostructures T2 - 8th International Conference on Photo-Excited Processes and Processes and Applications (ICPEPA-8) CY - Rochester, NY, USA DA - 2012-08-12 PY - 2012 AN - OPUS4-26144 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Höhm, S. A1 - Rosenfeld, A. T1 - Generation, control and mechanisms of the formation of femtosecond laser-induced periodic surface structures T2 - European Materials Research Society (EMRS) Spring Meeting 2013, Symposium V "Laser materials interactions for micro and nano applications" CY - Strasbourg, France DA - 2013-05-27 PY - 2013 AN - OPUS4-28806 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Grehn, M. A1 - Seuthe, T. A1 - Reinhardt, F. A1 - Eichler, H. J. A1 - Eberstein, M. T1 - Structural modification of femtosecond laser pulse irradiated potassium-magnesium silicate glasses probed by near edge X-ray absorption spectroscopy T2 - European Materials Research Society (EMRS) Spring Meeting 2013, Symposium V "Laser materials interactions for micro and nano applications" CY - Strasbourg, France DA - 2013-05-27 PY - 2013 AN - OPUS4-28809 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Höhm, S. A1 - Rohloff, M. A1 - Rosenfeld, A. A1 - Krüger, Jörg T1 - Femtosecond laser-induced periodic surface structures T2 - International High-Power Laser Ablation Conference (HPLA 2012) CY - Santa Fe, NM, USA DA - 2012-04-30 PY - 2012 AN - OPUS4-24442 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Höhm, S. A1 - Rosenfeld, A. A1 - Krüger, Jörg T1 - Femtosecond laser-induced periodic surface structures on materials with varying band gap T2 - International workshop on laser-induced periodic surface structures CY - Enschede, Netherlands DA - 2011-10-11 PY - 2011 AN - OPUS4-24264 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Stegemann, B. A1 - Schüle, M. A1 - Schultz, C. A1 - Richter, M. A1 - Pahl, H.-U. A1 - Endert, H. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Fink, F. T1 - Novel Laser Structuring Method for Chalkopyrite Solar Cells T2 - Marie Sklodowska-Curie Symposium on the Foundations of Physical Chemistry CY - Warsaw, Poland DA - 2011-11-18 PY - 2011 AN - OPUS4-24920 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Geier, M. A1 - Eberstein, M. A1 - Grießmann, H. A1 - Partsch, U. A1 - Völkel, L. A1 - Böhme, R. A1 - Mann, Guido A1 - Bonse, Jörn A1 - Krüger, Jörg T1 - Impact of laser treatment on phosphoric acid coated multicrystalline silicon PV-wafers N2 - The selective emitter is a well-known technology for producing highly doped areas under the metallization grid to improve the solar cell performance. In this work, the influence of laser irradiation on phosphoric acid coated multicrystalline silicon PV-wafers on the wafer surface structure, the phosphorous depth distribution and the electrical contact resistance within the laser treated area as well as the electrical series resistance of laserprocessed solar cells was evaluated. Different laser processing settings were tested including pulsed and continuous wave (cw) laser sources (515 nm, 532 nm, 1064 nm wavelength). Complementary numerical simulations using the finite element method (FEM) were conducted to explain the impact of the laser parameters on the melting behavior (melt duration and geometry). It was found that the melt duration is a key parameter for a successful laser Doping process. Our simulations at a laser wavelengths of 515 nm reveal that low-repetition rate (<500 kHz) laser pulses of 300 ns duration generate a melt duration of ~0.35 µs, whereas upon scanning cw-laser radiation at 532 nm prolongates the melt duration by at least one order of magnitude. Experimentally, the widely used ns-laser pulses did not lead to satisfying laser irradiation results. In contrast, cw-laser radiation and scan velocities of less than 2 m/s led to suitable laser doping featuring low electrical resistances in the laser treated areas. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.2011 KW - Silicon solar cell KW - Selective emitter KW - Laser processing KW - Doping KW - Simulation PY - 2011 SN - 3-936338-27-2 DO - https://doi.org/10.4229/26thEUPVSEC2011-2BV.1.7 SP - 1243 EP - 1247 AN - OPUS4-24995 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Eberstein, M. A1 - Geier, M. A1 - Grießmann, H. A1 - Partsch, U. A1 - Voelkel, L. A1 - Böhme, R. A1 - Pentzien, Simone A1 - Koter, Robert A1 - Mann, Guido A1 - Bonse, Jörn A1 - Krüger, Jörg T1 - Towards an industrial laser doping process for the selective emitter using phosphoric acid as dopant N2 - Different laser supported approaches have already been realized, proving the great potential of laserdoped selective emitters (LDSE). However, it is challenging to establish a low-cost process by using pulsed laser tools. So far a single-step process only leads to satisfying results utilizing cw-lasers. In this paper we have examined a two-step process to produce laser-doped selective emitters on multicrystalline textured standard silicon photovoltaic wafers (90-Ω/sq-Emitter, SiN-antireflection coating (ARC)). The precise ARC removal by near-infrared fs-laser pulses (30 fs, 800 nm), and the doping of uncoated silicon wafers by ns-laser pulses (8 ns, 532 nm) were systematically investigated. In the fs-experiment, optimum conditions for ARC removal were identified. In the nsexperiments under suitable conditions (melting regime), the phosphorous concentration underneath the wafer surface was significantly increased and the sheet resistance was reduced by nearly a factor of two. Moreover, electrical measurements on fired metallization fingers deposited on the laser processed wafers showed low contact resistances. Hence, wafer conditioning with combined fs-laser- and ns-laser-processes are expected to be a promising technology for producing selective emitters. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.2011 KW - Laser processing KW - Doping KW - Selective emitter KW - Multicrystalline silicon PY - 2011 SN - 3-936338-27-2 DO - https://doi.org/10.4229/26thEUPVSEC2011-2BV.1.2 SP - 1220 EP - 1223 AN - OPUS4-24996 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Richter, M. A1 - Schultz, C. A1 - Bonse, Jörn A1 - Pahl, H.-U. A1 - Endert, H. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Stegemann, B. A1 - Fink, F. T1 - Laser-ablation behavior of thin-film materials used in silicon and CIGSe based solar cells N2 - Structuring of thin-film photovoltaic modules requires basic knowledge of the laser – thin-film interaction in order to adapt the accessible laser parameters, like wavelength, power, repetition rate and scribing speed whilst taking into account the specific material properties of the layer. We have studied the nanosecond laserablation behavior of corresponding layers (i) of silicon based thin-film solar cells with a-Si/µc-Si tandem absorber type and (ii) of back contact and absorber layer of CIGSe solar cells. The respective ablation threshold fluences were determined as integrative parameters describing the specific laser – material interaction. For the threshold determination we used two different methods and developed a new analytical approach taking into account scribing through the glass substrate as it is preferred for most structuring processes. This was done by analyzing the thin film ablation results by means of optical microscopy, profilometry, scanning electron microscopy (SEM). Moreover, we determined the incubation coefficient of the regarded material layers which allows us to predict quantitatively the influence of the spot overlap on the scribing threshold. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.011 KW - Laser processing KW - Ablation KW - Incubation KW - a-Si/my-Si KW - CIGS PY - 2011 SN - 3-936338-27-2 DO - https://doi.org/10.4229/26thEUPVSEC2011-3DV.2.8 SP - 2943 EP - 2946 AN - OPUS4-24997 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Schultz, C. A1 - Schüle, M. A1 - Richter, M. A1 - Pahl, H.-U. A1 - Endert, H. A1 - Bonse, Jörn A1 - Dirnstorfer, I. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Fink, F. A1 - Stegemann, B. T1 - P1, P2 and P3 structuring of CIGSe solar cells with a single laser wavelength N2 - Manufacturing of CIGSe thin film solar modules involves typically one laser structuring step (P1) and two mechanical structuring steps (P2 and P3) for serial interconnection. In our approach, complete laser structuring is successfully demonstrated by application of short nanosecond laser pulses (<10 ns) with a single, visible wavelength of 532 nm. The P1 and the P3 trenches are scribed by induced and direct ablation, respectively. For the P2 scribe, the thermal input of the ns laser pulses is used to transform the CIGSe absorber layer locally into a highly conductive compound to provide proper electrical interconnection. These findings promise further simplification and flexibility to thin film solar cell production. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.2011 KW - Laser processing KW - Nanosecond pulses KW - Ablation KW - Cu(InGa)Se2 KW - Electrical properties PY - 2011 SN - 3-936338-27-2 DO - https://doi.org/10.4229/26thEUPVSEC2011-3AV.1.35 SP - 2540 EP - 2543 AN - OPUS4-24998 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Stegemann, B. A1 - Schultz, C. A1 - Schüle, M. A1 - Richter, M. A1 - Pahl, H.-U. A1 - Endert, H. A1 - Bonse, Jörn A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Fink, F. ED - Luschtinetz, T. ED - Lehmann, J. T1 - Neuartige Laserstrukturierung von CIGSe-Dünnschicht-Solarzellen N2 - Ein wesentlicher Vorteil der Dünnschichtphotovoltaik gegenüber der waferbasierten Photovoltaik liegt in der monolithischen Serienverschaltung. Bei der Herstellung von Chalkopyrit(CIGSe) -Dünnschicht-Solarmodulen erfolgen dafür typischerweise ein Laser-Strukturierungsschritt (P1) und zwei mechanische Strukturierungsschritte (P2, P3). In diesem Beitrag wird gezeigt, dass die Strukturierung von CIGSe-Solarmodulen vollständig mit kurzen Laserpulsen (<10 ns Pulsdauer) und einer einzigen Wellenlänge (532 nm) möglich ist. Der P1- und P3-Schnitt erfolgen durch direkte induzierte Ablation. Für den P2-Schnitt wird gezielt der hohe Wärmeeintrag der ns-Laserpulse genutzt, um die CIGSe- Absorberschicht lokal aufzuschmelzen und strukturell so zu verändern, dass eine elektrisch gut leitende Verbindung zwischen Front- und Rückkontakt entsteht. N2 - A major advantage of thin film photovoltaics over wafer-based photovoltaics is the monolithic series connection. Manufacturing of chalcopyrite (CIGSe) thin film solar modules involves typically one laser structuring step (P1) and two mechanical structuring steps (P2 and P3) for serial interconnection. In our approach, complete laser structuring is successfully demonstrated simply by application of short nanosecond laser pulses (<10 ns) with a single, visible wavelength of 532 nm. The P1 and the P3 trenches are scribed by induced direct ablation. For the P2 scribe, the thermal input of the ns laser pulses is used to transform the CIGSe absorber layer locally into a highly conductive compound to provide proper electrical interconnection between the front and back contact. T2 - 18. Symposium "Nutzung regenerativer Energiequellen und Wasserstofftechnik" / VDI-Tagung "Energieland Mecklenburg-Vorpommern" CY - Stralsund, Germany DA - 03.11.2011 KW - Photovoltaik KW - Dünnschichtsolarzellen KW - Chalkopyrite KW - Laserstrukturierung PY - 2011 SN - 978-3-9813334-4-2 SP - 204 EP - 210 AN - OPUS4-24999 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Höhm, S. A1 - Rosenfeld, A. T1 - Femtosecond laser-induced periodic nanostructures T2 - International workshop on "Laser micro and nano structuring: Fundamentals et applications" CY - Paris, France DA - 2012-12-10 PY - 2012 AN - OPUS4-27659 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Seuthe, T. A1 - Grehn, M. A1 - Mermillod-Blondin, A. A1 - Eichler, H. J. A1 - Eberstein, M. T1 - Femtosecond laser pulse modification of binary lithium silicate glasses T2 - International workshop on "Laser micro and nano structuring: Fundamentals et applications" CY - Paris, France DA - 2012-12-10 PY - 2012 AN - OPUS4-27660 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Höhm, S. A1 - Rosenfeld, A. T1 - Periodic surface structures generated by cross-polarized double femtosecond laser pulse irradiation sequences T2 - Photonics West, SPIE Conference 8607 on Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVIII CY - San Francisco, CA, USA DA - 2013-02-02 PY - 2013 AN - OPUS4-27668 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CHAP A1 - Beke, S. A1 - Sugioka, K. A1 - Midorikawa, K. A1 - Bonse, Jörn ED - Hemsworth, E.J. T1 - Nanaosecond and femtosecond laser ablation of TeO2 crystals: surface characterization and plasma analysis N2 - Near-IR femtosecond (fs) (pulse duration = 150 fs, wavelength = 775 nm, repetition rate 1 kHz) and VUV nanosecond (ns) (pulse duration = 20 ns, wavelength = 157 nm, repetition rate 1 to 5 Hz) laser pulse ablation of single-crystalline TeO2 (c-TeO2 ) surfaces was performed in air using the direct focusing technique. A multi-method characterization using optical microscopy, atomic force microscopy and scanning electron microscopy revealed the surface morphology of the ablated craters. This allowed us at each irradiation site to characterize precisely the lateral and vertical dimensions of the laser-ablated craters for different laser pulse energies and number of laser pulses per spot. Based on the obtained information, we quantitatively determined the ablation threshold fluence for the fs laser irradiation when different pulse numbers were applied to the same spot using two independent extrapolation techniques. We found that in the case of NIR fs laser pulse irradiation, the ablation threshold significantly depends on the number of laser pulses applied to the same spot indicating that incubation effects play an important role in this material. In the case of VUV ns laser pulses, the ablation rate is significantly higher due to the high photon energy and the predominantly linear absorption in the material. These results are discussed on the basis of recent models of the interaction of laser pulses with dielectrics. In the second part of this chapter, we use time- of-flight mass spectrometry (TOFMS) to analyze the elemental composition of the ablation products generated upon laser irradiation of c-TeO2 with single fs- (pulse duration ~200 fs, wavelength 398 nm) and ns-pulses (pulse duration 4 ns, wavelength 355 nm). Due to the three order of magnitude different peak intensities of the ns- and fs laser pulses, significant differences were observed regarding the laser-induced species in the plasma plume. Positive singly, doubly and triply charged Te ions (Te+, Te2+, Te3+) in the form of many different isotopes were observed in case of both irradiations. In the case of the ns-laser ablation, the TeO+ formation was negligible compared to the fs case and there was no Te trimer (Te3+) formation observed. It was found that the amplitude of Te ion signals strongly depends on the applied laser pulse energy. Singly charged oxygen ions (O+) are always present as a byproduct in both kinds of laser ablation. KW - Tellurium dioxide crystals KW - Femtosecond laser ablation KW - VUV nanosecond laser ablation KW - Multiphoton absorption KW - Time-of-flight mass spectroscopy KW - Incubation KW - Optical properties KW - Scanning electron microscopy KW - Atomic force microscopy KW - Isotopes PY - 2011 SN - 978-1-61324-851-5 N1 - Serientitel: Physics Research and Technology – Series title: Physics Research and Technology IS - Chapter 4 SP - 77 EP - 96 PB - Nova Science Publishers, Inc. AN - OPUS4-25454 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Femtosecond laser-induced periodic surface structures T2 - Institutskolloquium des Leibniz-Instituts für Oberflächenmodifizierung CY - Leipzig, Germany DA - 2012-06-07 PY - 2012 AN - OPUS4-25531 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Höhm, S. A1 - Rosenfeld, A. A1 - Koter, Robert A1 - Krüger, Jörg T1 - Femtosecond laser-induced periodic surface structures generated in different environments T2 - European Materials Research Society (EMRS) Spring Meeting 2012, Symposium V "Laser materials processing for micro and nano applications" CY - Strasbourg, France DA - 2012-05-12 PY - 2012 AN - OPUS4-25521 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Hertwig, Andreas A1 - Koter, Robert A1 - Weise, Matthias A1 - Beck, Uwe A1 - Reinstädt, Philipp A1 - Griepentrog, Michael A1 - Krüger, Jörg A1 - Picquart, M. A1 - Haro-Poniatowski, E. T1 - Femtosecond laser-induced modification and ablation of hydrogenated amorphous carbon films T2 - European Materials Research Society (EMRS) Spring Meeting 2012, Symposium V "Laser materials processing for micro and nano applications" CY - Strasbourg, France DA - 2012-05-12 PY - 2012 AN - OPUS4-25522 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Koter, Robert A1 - Hartelt, Manfred A1 - Spaltmann, Dirk A1 - Höhm, S. A1 - Rosenfeld, A. A1 - Krüger, Jörg T1 - Femtosecond Laser-induced periodic surface structures on steel for tribological applications T2 - 12th Conference on Laser Ablation, COLA 2013 CY - Ischia, Italy DA - 2013-10-06 PY - 2013 AN - OPUS4-29555 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Shymanovich, U. A1 - Barty, A. A1 - Boutet, S. A1 - Bogan, M. A1 - Marchesini, S. A1 - Stojanovic, N. A1 - Sobierajski, R. A1 - Lu, W. A1 - El Kharrazi, M. A1 - Vattilana, M. A1 - Quirin, F. A1 - Brazda, T. A1 - Zastrau, U. A1 - Hau-Riege, S. A1 - Tobey, R. A1 - Ehrke, H. A1 - Cavalleri, A. A1 - Redlin, H. A1 - Düsterer, S. A1 - Frank, M. A1 - Bajt, S. A1 - Schulz, J. A1 - Seibert, M. A1 - Hajdu, J. A1 - Treusch, R. A1 - Chapman, H. A1 - Sokolowski-Tinten, K. T1 - Transient respnse of laser-irradiated solids studied with femtosecond short-wavelength free-electron-lasers T2 - Laser Damage Symposium XLI: Annual Symposium on Optical Materials for High Power Lasers CY - Boulder, CO, USA DA - 2009-09-21 PY - 2009 AN - OPUS4-19629 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Bulgakova, N.M. A1 - Bulgakov, A.V. A1 - Zhukov, V. P. A1 - Rosenfeld, A. T1 - Fs-laser processing of metals: pulse duration effects and the role of air ionization T2 - COLA 2009, 10th International Conference on Laser Ablation CY - Singapore DA - 2009-11-22 PY - 2009 AN - OPUS4-20490 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Sokolowski-Tinten, K. A1 - Barty, A. A1 - Boutet, S. A1 - Shymanovich, U. A1 - Chapman, H. N. A1 - Bogan, M. A1 - Marchesini, S. A1 - Hau-Riege, S. A1 - Stojanovic, N. A1 - Rosandi, Y. A1 - Urbassek, H. M. A1 - Tobey, R. A1 - Ehrke, H. A1 - Cavalleri, A. A1 - Düsterer, S. A1 - Redlin, H. A1 - Frank, M. A1 - Bajt, S. A1 - Schulz, J. A1 - Seibert, M. A1 - Hajdu, J. A1 - Treusch, R. A1 - Bostedt, Ch. A1 - Hoener, M. A1 - Moeller, T. T1 - Short-pulse laser induced melting and ablation studied with time-resolved coherent XUV scattering T2 - Laser Damage Symposium XLII: Annual Symposium on Optical Materials for High Power Lasers CY - Boulder, CO, USA DA - 2010-09-26 PY - 2010 AN - OPUS4-21686 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Rohloff, M. A1 - Das, S. K. A1 - Höhm, S. A1 - Rosenfeld, A. T1 - Femtosecond laser-induced periodic surface structures: importance of transient excitation stages T2 - SPIE Conference on Optics+Optoelktronics 2011, Conference "Damage to VUV, EUV and X-ray Optics (XDAM3)" CY - Prague, Czech Republic DA - 2011-04-18 PY - 2011 AN - OPUS4-23549 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Structural morphological and dynamical aspects of fs-laser induced modification of crystalline silicon T2 - Eingeladener Vortrag im Seminar des Bereichs A des Max-Born-instituts, Adlershof CY - Berlin, Germany DA - 2010-01-12 PY - 2010 AN - OPUS4-20759 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Structural and morphological modifikation of crystalline silicon induced femtosecond laser pulses T2 - internes Seminar des Fraunhofer-Instituts für Keramische Technologien und Systeme (IKTS) CY - Dresden, Germany DA - 2010-01-20 PY - 2010 AN - OPUS4-20805 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Beke, S. A1 - Sugioka, K. A1 - Midorikawa, K. A1 - Bonse, Jörn T1 - Near-IR femtosecond and VUV nanosecond laser processing of TeO2 crystals in air N2 - Near-IR femtosecond ( τ = 150 fs, λ = 775 nm, repetition rate 1 kHz) and VUV nanosecond (τ = 20 ns, λ = 157 nm, repetition rate 1 to 5 Hz) laser pulse ablation of single-crystalline TeO2 (c-TeO2, grown by the balance controlled Czochalski growth method) surfaces was performed in air using the direct focusing technique. The multi-method characterization using optical microscopy, atomic force microscopy and scanning electron microscopy revealed the surface morphology of the ablated craters. This allowed us to characterize precisely the lateral and vertical dimensions of the laser-ablated craters for different laser pulse energies and pulse numbers at each spot. Based on the obtained information, we quantitatively determined the ablation threshold fluence for the fs laser irradiation when different pulse numbers were applied to the same spot by using two independent extrapolation techniques. We found that in case of NIR femtosecond laser pulse irradiation, the ablation threshold significantly depends on the number of laser pulses applied to the same spot indicating that incubation effects play an important role in this material. In case of VUV ns laser pulses, the ablation rate is significantly higher due to the high photon energy and the predominantly linear absorption in the material. These results are discussed on the basis of recent models of the interaction of laser pulses with dielectrics. PY - 2010 DO - https://doi.org/10.1117/12.845074 SN - 0277-786X SN - 0038-7355 SN - 0361-0748 VL - 7584 SP - 758415-1 - 758415-10 PB - Soc. CY - Redondo Beach, Calif. [u.a.] AN - OPUS4-20912 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Maerten, L. A1 - Rosenfeld, A. A1 - Krüger, Jörg T1 - Transient changes of the optical properties of solids during femtosecond laser pulse irradiation and its implications for the formation of lase-induced periodic surface structures T2 - European Materials Research Society (EMRS) Spring Meeting, Symposium R "Laser processing an diagnostics for micro and nano applications" CY - Strasbourg, France DA - 2010-06-07 PY - 2010 AN - OPUS4-20993 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Sokolowski-Tinten, K. A1 - Barty, A. A1 - Boutet, S. A1 - Bogan, M. A1 - Marchesini, S. A1 - Hau-Riege, S. A1 - Stojanovic, N. A1 - Tobey, R. A1 - Ehrke, H. A1 - Cavalleri, A. A1 - Düsterer, S. A1 - Frank, M. A1 - Bajt, S. A1 - Schulz, J. A1 - Seibert, M. A1 - Hajdu, J. A1 - Treusch, R. A1 - Chapman, H. T1 - Short-pulse laser induced transient structure formation and ablation studied with time-resolved coherant XUV-scattering T2 - The International High Power Laser Ablation Conference CY - Santa Fe, NM, USA DA - 2010-04-18 PY - 2010 AN - OPUS4-21229 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Rosenfeld, A. A1 - Krüger, Jörg T1 - Femtosecond laser-inducted periodic surface structures: recent approaches to explain their subwavelength periodicties T2 - International Conference on Lasers, Applications, and Techonlogies, ICONO/LAT 2010, Symposium 2 der LAT 2010 "Laser-assisted Micro- and Nanotechnologies" CY - Kazan, Russia DA - 2010-08-23 PY - 2010 AN - OPUS4-21230 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Mermillod-Blondin, A. A1 - Mauclair, C. A1 - Rosenfeld, A. A1 - Stoian, R. A1 - Audouard, E. T1 - Time-resolved imaging of bulk a-SiO2 upon various ultrashort excitation sequences T2 - SPIE Photonics West Conference: Frontiers in Ultrafast Optics: Biomedical, Scientific and Industrial Applications XI (Conference 7925) CY - San Francisco, CA, USA DA - 2011-01-22 PY - 2011 AN - OPUS4-22095 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Rosenfeld, A. A1 - Stoian, R. A1 - Garrelie, F. A1 - Colombier, J.-P. A1 - Stoian, R. T1 - Nanostructuring of solid surfaces basec on laser-induced periodic surface structures (LIPSS): recent experimental and theoretical approaches T2 - Poster-Session im Rahmen des deutsch-französischen Kolloquiums "French-German Research: 50 years In The Light Of The Laser" CY - Berlin, Germany DA - 2010-11-05 PY - 2010 AN - OPUS4-22324 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Femtosecond laser-induced periodic surface structures T2 - eingeladener Vortrag am Labertoire Hubert Curien Université Jean Monnet Lyon CY - Saint-Étienne, France DA - 2010-11-18 PY - 2010 AN - OPUS4-22325 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Rosenfeld, A. A1 - Krüger, Jörg T1 - Femtosecond laser-induced periodic surface structures: recent approaches to explain their sub-wavelength periodicities T2 - International Conference on Lasers, Applications and Technologies, ICONO/LAT 2010 Symposium 2 Laser-assisted Micro- and Nanotechnologies, LAT 2010 CY - Kazan, Russia DA - 2010-08-23 PY - 2010 AN - OPUS4-22573 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Schultz, C. A1 - Schüle, M. A1 - Stelmaszczyk, K. A1 - Bonse, Jörn A1 - Witteck, R. A1 - Weizman, M. A1 - Rhein, H. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Stegemann, B. A1 - Fink, F. T1 - Film side laser patterning of molybdenum thin films sputter-deposited onto glass N2 - Serial interconnection of CIGSe thin film solar modules involves typically glass-side laser patterning of the molybdenum layer (P1 scribe). In this paper we present a working principle of P1 film side patterning. The investigated samples were sputter-deposited onto soda-lime glass substrates. For understanding the fundamental ablation behavior, two kinds of layer systems were studied: on the one hand monolayer systems which are compressively stressed and on the other hand bilayer systems, consisting of a tensile stressed layer on the substrate and a second layer on top. The film-side ablation process was studied using a nanosecond as well as a picosecond laser source. The influence of intrinsic stress was studied by XRD. Time resolved spectroscopy reveals the formation of plasma as important driving mechanism for ablation. It is shown that by proper adaption of the sputter conditions high-quality P1 film side patterning is achieved. T2 - 27th European photovoltaic solar energy conference and exhibition CY - Frankfurt, Germany DA - 24.09.2012 KW - Laser processing KW - Molybdenum KW - Strain KW - Ablation KW - Sputter deposition KW - Cu(InGa)Se2 PY - 2012 SN - 3-936338-28-0 DO - https://doi.org/10.4229/27thEUPVSEC2012-3CV.1.6 SP - 2266 EP - 2272 AN - OPUS4-27208 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Femtosecond laser-induced periodic surface structures T2 - ULTRA Forschungseminar des Instituts für Physik der Universität Kassel CY - Kassel, Germany DA - 2012-11-12 PY - 2012 AN - OPUS4-27153 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CHAP A1 - Beke, S. A1 - Sugioka, K. A1 - Midorikawa, K. A1 - Bonse, Jörn ED - Hemsworth, E.J. T1 - Nanosecond and femtosecond laser ablation of TeO2 crystals: surface characterization and plasma analysis N2 - Near-IR femtosecond (fs) (pulse duration = 150 fs, wavelength = 775 um, Repetition rate 1 kHz) and VUV nanosecond (ns) (pulse duration = 20 ns, wavelength = 157 nm, repetition rate 1 to 5 Hz) laser pulse ablation of single-crystalline TeO? (c-Te02) surfaces was performed in air using the direct focusing technique. A multi-method characterization using optical microscopy, atomic force microscopy and scanning electron microscopy revealed the surface morphology of the ablated craters. This allowed us at each irradiation site to characterize precisely the lateral and vertical dimensions of the laser-ablated craters for different laser pulse energies and number of laser pulses per spot. Based on the obtained information, we quantitatively determined the Ablation threshold fluence for the fs laser irradiation when different pulse numbers were applied to the same spot using two independent extrapolation techniques. We found that in the case of NIR fs laser pulse irradiation, the ablation threshold significantly depends on the number of laser pulses applied to the same spot indicating that incubation effects play an important role in this material. In the case of VUV ns laser pulses, the ablation rate is significantly higher due to the high photon energy and the predominantly linear absorption in the material. These results are discussed on the basis of recent models of the interaction of laser pulses with dielectrics. In the second part of this chapter, we use timeof-flight mass spectrometry (TOFMS) to analyze the elemental composltion of the ablation products generated upon laser irradiation of c-Te02 with single fs- (pulse duration ~ 200 fs, wavelength 398 nm) and ns-pulses (pulse duration 4 ns, wavelength 355 nm). Due to the three Order of magnitude different peak intensities of the ns- and fs laser pulses, significant differences were observed regarding the laser-induced species in the plasma plume. Positive singly, doubly and triply charged Te ions (Te+, Te2+, Te3+) in the form of many different isotopes were observed in case of both irradiations. In the case of the ns-laser ablation, the TeO+ formation was negligible compared to the fs case and there was no Te trimer (Te3+) formation observed. It was found that the amplitude of Te ion Signals strongly depends on the applied laser pulse energy. Singly charged Oxygen ions (0+) are always present as a byproduct in both kinds of laser ablation. KW - Femtosecond laser ablation KW - Nanosecond laser ablation KW - Damage threshold KW - TeO2 KW - Dielectrics KW - Time-of-flight mass spectrometry (TOF-MS) PY - 2011 SN - 978-1-61324-851-5 N1 - Serientitel: Physics Research and Technology – Series title: Physics Research and Technology IS - Chapter 4 SP - 77 EP - 96 PB - Nova Science Publishers, Inc. AN - OPUS4-25465 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Femtosecond laser-induced periodic surface structures T2 - Seminar im Instituto de Optica (CSIC) CY - Madrid, Spain DA - 2014-04-04 PY - 2014 AN - OPUS4-30173 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - VIDEO A1 - Schwibbert, Karin A1 - Richter, Anja A1 - Bonse, Jörn T1 - BioCombs4Nanofibers: From nanofibers over spiders to bacteria N2 - This 6 minute long MP4-video presents some key results of the European research project "BioCombs4Nanofibers" to the broader public. Inspired by nature, some concepts of certain types of spiders are transferred to technology in order to develop bacteria-repellent surfaces through laser surface nanostructuring. Funding notice: This study was funded by the European Union's research and innovation program under the FET Open grant agreement No. 862016 (BioCombs4Nanofibers, http://biocombs4nanofibers.eu). KW - Antiadhesive surfaces KW - Laser-induced periodic surface structures (LIPSS) KW - Cribellate spiders KW - Bacterial adhesion tests KW - Bacteria-repellent surfaces PY - 2022 UR - https://download.jku.at/org/7kM/xyU/BioCombs4Nanofibers/D5.6_video%20for%20the%20broader%20public_23.03.2022.mp4 UR - https://www.jku.at/en/biocombs4nanofibers/dissemination/ DO - https://doi.org/10.26272/opus4-54939 PB - Bundesanstalt für Materialforschung und -prüfung (BAM) CY - Berlin AN - OPUS4-54939 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Florian, Camilo A1 - Mezera, Marek A1 - Wasmuth, Karsten A1 - Richter, Anja A1 - Schwibbert, Karin A1 - Krüger, Jörg A1 - Müller, F. A. A1 - Gräf, S. T1 - A brief survey on open questions about laser-induced periodic surface structures N2 - The processing of laser-induced periodic surface structures (LIPSS) represents a simple and robust way for the nanostructuring of solids that allows creating a wide range of surface functionalities featuring applications in optics, tribology, medicine, energy technologies, etc. While the currently available laser and scanner technology already allows surface processing rates at the m2/min level, industrial applications of LIPSS are sometimes hampered by the complex interplay between the nanoscale surface topography and the specific surface chemistry. This typically manifests in difficulties to control the processing of LIPSS and in limitations to ensure the long-term stability of the created surface functions. This presentation aims to identify some unsolved scientific problems related to LIPSS, discusses the pending technological limitations, and sketches the current state of theoretical modelling. Hereby, it is intended to stimulate further research and developments in the field of LIPSS for overcoming these limitations and for supporting the transfer of the LIPSS technology into industry. T2 - E-MRS Spring Meeting 2022 CY - Online meeting DA - 30.05.2022 KW - Laser-induced periodic surface structures (LIPSS) KW - Surface functionalization KW - Industrial applications KW - Biofilm growth PY - 2022 AN - OPUS4-54929 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Mirabella, Francesca A1 - Mezera, Marek A1 - Weise, Matthias A1 - Sahre, Mario A1 - Wasmuth, Karsten A1 - Hertwig, Andreas A1 - Krüger, Jörg A1 - Hodoroaba, Vasile-Dan T1 - Chemical and structural changes at the surface of titanium materials upon irradiation with near-infrared ultrashort laser pulses N2 - Due to its large strength-to-weight ratio and excellent biocompatibility, titanium materials are of paramount importance for medical applications, e.g. as implant material for protheses. In this work, the evolution of various types of laser-induced micro- and nanostructures emerging on titanium or titanium alloys upon irradiation by near-infrared ultrashort laser pulses (925 fs, 1030 nm) in air environment is studied for various laser fluence levels, effective number of pulses and at different pulse repetition rates (1 – 400 kHz). The morphologies of the processed surfaces were systematically characterized by optical and scanning electron microscopy (OM, SEM). Complementary white-light interference microscopy (WLIM) revealed the corresponding surface topographies. Chemical and structural changes were analysed through depth-profiling time-of-flight secondary ion mass spectrometry (TOF-SIMS) and X-ray diffraction (XRD) analyses. The results point towards a remarkable influence of the laser processing parameters on the surface topography, while simultaneously altering the near-surface chemistry via laser-induced oxidation effects. Consequences for medical applications are outlined. T2 - E-MRS Spring Meeting 2022 CY - Online meeting DA - 30.05.2022 KW - Laser-induced periodic surface structures (LIPSS) KW - Surface functionalization KW - ToF-SIMS KW - Chemical analysis KW - Titanium PY - 2022 AN - OPUS4-54931 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Ayerdi, Jon J. A1 - Slachciak, Nadine A1 - Gradt, Thomas A1 - Krüger, Jörg A1 - Zabala, A. A1 - Spaltmann, Dirk T1 - Ultrakurzpulslaser induzierte Oxidschichten zur Reduktion von Reibung und Verschleiß auf Metalloberflächen N2 - Die Reduktion von Reibung und Verschleiß in technischen Systemen bietet ein großes Potenzial zur Reduktion von CO2-Emissionen. Dieser Beitrag diskutiert die Erzeugung und tribologische Charakterisierung von Ultrakurzpuls-generierten Nano- und Mikrostrukturen auf Metallen (Stahl, Titan). Besonderes Augenmerk wird dabei auf die Rolle der laserinduzierten Oxidschicht im Zusammenspiel mit verschleißreduzierenden Additiven in ölbasierten Schmiermitteln gerichtet. T2 - Workshop "Nachhaltigkeit durch Tribologische Schichten" - Europäische Forschungsgesellschaft Dünne Schichten e.V. CY - Karlsruhe, Germany DA - 17.05.2022 KW - Laser-induzierte periodische Oberflächenstrukturen KW - Reibungsreduktion KW - Verschleißreduktion KW - Oberflächenmodifikation KW - Oxidation KW - Additive PY - 2022 AN - OPUS4-54849 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Mezera, Marek A1 - Florian, Camilo A1 - Krüger, Jörg A1 - Gräf, S. T1 - Laser-Induced Periodic Surface Structures: when Maxwell meets Marangoni N2 - Laser-Induced Periodic Surface Structures (LIPSS, ripples) are a universal phenomenon and can be generated in a contactless, single-step process on almost any material upon irradiation of solids with intense laser radiation. Nowadays, processing rates of up to m^2/min are enabling new industrial applications in medicine, optics, tribology, biology, etc. Depending on the specific type of LIPSS, their structural sizes typically range from several micrometers down to less than 100 nanometers – far beyond the optical diffraction limit – while their orientations exhibit a clear correlation with the local polarization direction of the laser radiation. From a theoretical point of view, however, a controversial and vivid debate has emerged during the last two decades, whether LIPSS originate from electromagnetic effects (seeded already during the laser irradiation) – or whether they emerge from matter reorganization processes, i.e. distinctly after the laser irradiation. This presentation reviews the currently existent theories of LIPSS. A focus is laid on the historic development of the fundamental ideas, their corresponding mathematical descriptions and numerical implementations, along with a comparison and critical assessment of the different approaches. T2 - 16th International Conference on Laser Ablation (COLA 2021/22) CY - Matsue, Japan DA - 24.04.2022 KW - Laser-induced periodic surface structures (LIPSS) KW - Laser ablation KW - Theoretical modelling KW - Electromagnetic scattering KW - Hydrodynamics PY - 2022 AN - OPUS4-54716 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -