TY - JOUR A1 - Florian, Camilo A1 - Fischer, Daniel A1 - Freiberg, K. A1 - Duwe, M. A1 - Sahre, Mario A1 - Schneider, S. A1 - Hertwig, Andreas A1 - Krüger, Jörg A1 - Rettenmayr, M. A1 - Beck, Uwe A1 - Undisz, A. A1 - Bonse, Jörn T1 - Single Femtosecond Laser-Pulse-Induced Superficial Amorphization and Re-Crystallization of Silicon N2 - Superficial amorphization and re-crystallization of silicon in <111> and <100> orientation after irradiation by femtosecond laser pulses (790 nm, 30 fs) are studied using optical imaging and transmission electron microscopy. Spectroscopic imaging ellipsometry (SIE) allows fast data acquisition at multiple wavelengths and provides experimental data for calculating nanometric amorphous layer thickness profiles with micrometric lateral resolution based on a thin-film layer model. For a radially Gaussian laser beam and at moderate peak fluences above the melting and below the ablation thresholds, laterally parabolic amorphous layer profiles with maximum thicknesses of several tens of nanometers were quantitatively attained. The accuracy of the calculations is verified experimentally by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (STEM-EDX). Along with topographic information obtained by atomic force microscopy (AFM), a comprehensive picture of the superficial re-solidification of silicon after local melting by femtosecond laser pulses is drawn. KW - Femtosecond laser KW - Silicon KW - Amorphization KW - Crystallization KW - Spectroscopic imaging ellipsometry PY - 2021 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-523687 UR - https://www.mdpi.com/1996-1944/14/7/1651 DO - https://doi.org/10.3390/ma14071651 SN - 1996-1944 VL - 14 IS - 7 SP - 1651-1 EP - 1651-21 PB - MDPI AG CY - Basel, Switzerland AN - OPUS4-52368 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Acosta-Zepeda, C. A1 - Saavedra, S. A1 - Bonse, Jörn A1 - Haro-Poniatowski, E. T1 - Modelling of single UV nanosecond pulsed laser surface modifications of silicon N2 - Irradiation with a single spatially Gaussian-shaped nanosecond laser pulse in the melting regime can result in a characteristic annular change in the surface morphology of crystalline silicon. This has been verified experimentally in a variety of situations, where dimple-shaped surface topographies are produced. In a recent work we have investigated the induced changes in the surface topography upon exposure to wavelengths in the visible and near infrared spectral region. Irradiation in the UV requires a more detailed analysis due to the enhanced absorption of the material. In the present analysis, we determine under which conditions our previous model can be used and the corresponding results are presented. KW - Laser KW - Silicon KW - Surface modification PY - 2020 DO - https://doi.org/10.1088/1555-6611/ab9b2c SN - 1555-6611 SN - 1054-660X VL - 30 IS - 8 SP - 086003-1 EP - 086003-4 PB - IOP Publishing / Astro Ltd CY - Bristol, United Kingdom AN - OPUS4-51022 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -