TY - GEN A1 - Bonse, Jörn A1 - Baudach, Steffen A1 - Krüger, Jörg A1 - Kautek, Wolfgang ED - Phipps, C. T1 - Femtosecond laser micromachining of technical materials N2 - Micromachining experiments were performed with Ti:sapphire laser pulses (130 fs - 150 fs, 800 nm, approximately 10 Hz) in air. Employing the direct focusing technique, highly absorbing titanium nitride (TiN) and weakly absorbing polyimide (PI) and polymethylmethacrylate (PMMA) served as target materials. The lateral and vertical precision of the laser ablation and morphological features were characterized by scanning force (SFM), scanning electron (SEM) and optical microscopy. For TiN, incubation can be observed, i.e. the single-pulse surface damage threshold (0.26 J/cm2) is by a factor of two greater than the threshold for 100 pulses. Ablation rates below 10 nm per pulse can be achieved. The evolution of sub-wavelength ripples is presented in dependence on pulse number and laser fluence, respectively. The incubation behavior of the polymers can be described by an accumulation model as for TiN. Experiments on PI with varying focal lengths result in the same modification thresholds. Different polarization states of light (linear, circular) lead to a variation of the ablation rate and to various morphological patterns in the ablation craters (wavelength ripples, cones). Swelling of PMMA occurred at fluences below the ablation threshold. T2 - 3rd SPIE's International Conference on High-Power Laser Ablation CY - Santa Fe, NM, USA DA - 24.04.2000 KW - Ablation KW - Femtosecond pulse laser KW - Laser processing KW - Micromachining KW - Polymer KW - Titanium nitride KW - Ripples PY - 2000 SN - 0-8194-3700-X DO - https://doi.org/10.1117/12.407346 SN - 1605-7422 N1 - Serientitel: SPIE proceedings series – Series title: SPIE proceedings series IS - 4065 SP - 161 EP - 172 PB - SPIE CY - Bellingham, Wash. AN - OPUS4-967 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Krüger, Jörg A1 - Bonse, Jörn A1 - Baudach, Steffen A1 - Kautek, Wolfgang A1 - Lenzner, M. A1 - Wrobel, J. M. T1 - Femtosecond-Pulse Laser Machining of Semiconducting Materials N2 - Summary form only given. Machining investigations of crystalline silicon have been performed with laser pulses at a wavelength of 780 nm in the range between 5 fs and 400 fs. Applying 100 pulses per spot, surface damage thresholds were determined by the measurement of the damage diameter. In this pulse duration regime, the threshold fluences were nearly constant. Single-pulse investigations with 5 fs pulses yielded a value of about 0.15 J cm-2 identical to the multi-pulse experiment. This is in contradiction to the behaviour of dielectrics where incubation effects alter the optical properties down to the 5 fs pulse regime. Employing laser pulses with a duration of 130 fs at a wavelength of 800 nm, single-pulse ablation thresholds of 0.23 J cm-2 and 0.16 J cm-2 were determined for Si and InP in air, respectively. The threshold fluence was calculated from the linear relation between the square of the diameters versus the logarithm of the laser fluences. T2 - CLEO/Europe 2000 ; Conference on Lasers and Electro-Optics Europe ; Conférence Européenne sur les Lasers et l'Electro-Optique ; CLEO/Europe-IQEC CY - Nice, France DA - 2000-09-10 PY - 2000 SN - 0-7803-6319-1 DO - https://doi.org/10.1109/CLEOE.2000.910410 PB - IEEE Service Center CY - Piscataway, NJ AN - OPUS4-958 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Kautek, Wolfgang A1 - Wrobel, J. M. T1 - Femtosecond pulse laser machining of InP wafers N2 - Ablation of indium phosphide wafers in air was performed with 130 fs laser pulses at a wavelength of 800 nm at a low repetition rate of 10 Hz. In order to evaluate the role of the incubation effects, the relationship between the number of laser pulses used for the ablation and the threshold fluence was studied. Particular attention was paid to the chemical composition, surface morphology and structural variations of the ablated area. T2 - 5th Laser Applications in Microelectronics and Optoelectronics Manufacturing Conference (LAMOM) CY - San José, CA, USA DA - 240.01.2000 KW - Femtosecond laser ablation KW - Indium phosphide KW - Auger electron spectroscopy PY - 2000 SN - 0-8194-3550-3 SN - 1605-7422 N1 - Serientitel: SPIE proceedings series – Series title: SPIE proceedings series IS - 3933 SP - 280 EP - 287 PB - SPIE CY - Bellingham, Wash. AN - OPUS4-937 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Bonse, Jörn A1 - Baudach, Steffen A1 - Krüger, Jörg A1 - Kautek, Wolfgang ED - Exarhos, G. T1 - Femtosecond laser damage in dielectric coatings N2 - Multi-shot investigations of Ti:sapphire laser (wavelength (lambda) approximately equals 800 nm) induced damage were performed in three different laboratories (BAM, Berlin; LZH, Hannover; UNM, Albuquerque). The ablation behavior of a high reflecting mirror consisting of alternating (lambda) /4- layers of Ta2O5 and SiO2 was studied. Fused silica served as substrate. The influence of the pulse duration ((tau) equals 13 - 130 fs), the pulse number (30 - (infinity) ) and the repetition rate (10 Hz - 100 MHz) on the damage threshold will be discussed. T2 - 32nd Annual Boulder Damage Symposium CY - Boulder, CO, USA DA - 2000-10-16 PY - 2001 SN - 0-8194-4036-1 DO - https://doi.org/10.1117/12.425056 SN - 1605-7422 N1 - Serientitel: SPIE proceedings series – Series title: SPIE proceedings series IS - 4347 SP - 24 EP - 34 PB - International Society for Optical Engineering (SPIE) CY - Bellingham, Wash. AN - OPUS4-6013 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Krüger, Jörg A1 - Bonse, Jörn A1 - Lenzner, Matthias T1 - Modification and Ablation of Semiconductors by Femtosecond Laser Pulses N2 - Physical and chemical phenomena resulting from irradiation of silicon and indium phosphide with ultrashort laser pulses (~100fs) were investigated with respect to the difference between single- and multiple-pulse treatment. In the single-pulse case, several processes were identified: modification, recrystallization and ablation. All processes exhibit a distinct treshold behaviour. A two photon-absorption coefficient can be determined from a single spatial ablation profile. Accumulation effects were observed for multi-pulse illumination. Different morphological features like bubbles, rippels and microcolumns were found. PY - 2002 VL - 5 IS - 2 SP - 437 EP - 461 PB - Transworld Research Network CY - Trivandrum AN - OPUS4-1585 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Munz, Martin A1 - Sturm, Heinz ED - Vajtai, R. T1 - Scanning force microscopic investigations of the femtosecond pulse laser ablation of indium phosphide in air N2 - Laser ablation of single-crystalline indium phosphide (InP) was performed in air by means of linearly polarized Ti:sapphire femtosecond-pulses (800 nm, 130 fs, 10 Hz). As a result of the first laser pulses, several morphological changes (crater formation, rim formation, ripple structures and cones) were observed. These effects were explored using force modulation microscopy (FMM), a technique based on scanning force microscopy (SFM), allowing the simultaneous imaging of both topography and local stiffness at a high lateral resolution. The first laser pulse induces the formation of a protruding rim (height <20 nm, width ~300 nm) bordering the ablated crater. A Fourier-analysis of the multi-pulse generated topographies reveals the formation of wavelength-sized periodic ripples (modulation depth <100 nm) with an orientation perpendicular to that of the electric field vector of the laser radiation. Besides these morphological alterations, also material modifications were observed in the irradiated regions by means of the FFM technique. Within the ablated craters, local stiffness variations were found revealing an inhomogeneous material composition/structure as a consequence of the femtosecond pulse laser treatment. T2 - Nanotechnology Conference 2003 CY - Maspalomas, Gran Canaria, Spain DA - 2003-05-19 KW - Femtosecond laser irradiation KW - Microstructure KW - Indium phosphide KW - Scanning/atomic force microscopy (SFM/AFM) KW - Stiffness KW - Laser induced periodic surface structures (LIPSS) PY - 2003 UR - http://cat.inist.fr/?aModele=afficheN&cpsidt=15329222 SN - 0-8194-4978-4 N1 - Serientitel: SPIE proceedings series – Series title: SPIE proceedings series IS - 5118 SP - 221 EP - 234 PB - SPIE, the International Society for Optical Engineering CY - Bellingham, Wash. AN - OPUS4-2865 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Munz, Martin A1 - Sturm, Heinz T1 - Scanning force microscopic investigations of the femtosecond pulse laser ablation of indium phosphide in air T2 - SPIE conference Nanotechnology Gran Canaria CY - Maspalomas, Spain DA - 2003-05-20 PY - 2003 AN - OPUS4-4081 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Bulgakova, N.M. A1 - Bulgakov, A.V. A1 - Zhukov, V. P. A1 - Rosenfeld, A. T1 - Fs-laser processing of metals: pulse duration effects and the role of air ionization T2 - COLA 2009, 10th International Conference on Laser Ablation CY - Singapore DA - 2009-11-22 PY - 2009 AN - OPUS4-20490 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Extended Drude-Sipe theory of femtosecond laser-induced periodic surface structures on ZnO T2 - Workshop "ZnO and TiO2 nanostructures" CY - Berlin, Germany DA - 2009-07-09 PY - 2009 AN - OPUS4-19605 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Grehn, M. A1 - Theiss, C. A1 - Schmitt, F. J. A1 - Kaltenbach, A. A1 - Eichler, H. J. T1 - Femtosecond laser-induced ablation of dielectrics T2 - Topical Meeting "Emerging Trends and Novel Materials in Photonics" of the International Comission for Optics CY - Delphi, Greece DA - 2009-10-07 PY - 2009 AN - OPUS4-20087 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Sokolowski-Tinten, K. A1 - Barty, A. A1 - Boutet, S. A1 - Shymanovich, U. A1 - Bogan, M. A1 - Marchesini, S. A1 - Hau-Riege, S. A1 - Stojanovic, N. A1 - Tobey, R. A1 - Ehrke, H. A1 - Cavalleri, A. A1 - Duesterer, S. A1 - Frank, M. A1 - Bajt, S. A1 - Schulz, J. A1 - Seibert, M. A1 - Hajdu, J. A1 - Treusch, R. A1 - Chapman, H. T1 - Short-pulse laser induced transient structure formation and ablation studied with time-resolved coherent XUV-scattering T2 - 2009 Fall Meeting of the Materials Resarch Society CY - Boston, MA, USA DA - 2009-11-30 PY - 2009 AN - OPUS4-20048 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Bearbeiten und Reinigen mit Laserstrahlungen T2 - Eingeladener Vortrag in durch das Max-Born-Institut organisiertem Workshop CY - Königs Wusterhausen, Germany DA - 2009-10-05 PY - 2009 AN - OPUS4-20044 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Femtosecond pulse laser induced modification of sillicon: dynamical, structural and morphological aspects T2 - Seminar zur Optik und Photonik WS 09/10, TU Berlin CY - Berlin, Germany DA - 2009-11-27 PY - 2009 AN - OPUS4-20303 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Shymanovich, U. A1 - Barty, A. A1 - Boutet, S. A1 - Bogan, M. A1 - Marchesini, S. A1 - Stojanovic, N. A1 - Sobierajski, R. A1 - Lu, W. A1 - El Kharrazi, M. A1 - Vattilana, M. A1 - Quirin, F. A1 - Brazda, T. A1 - Zastrau, U. A1 - Hau-Riege, S. A1 - Tobey, R. A1 - Ehrke, H. A1 - Cavalleri, A. A1 - Redlin, H. A1 - Düsterer, S. A1 - Frank, M. A1 - Bajt, S. A1 - Schulz, J. A1 - Seibert, M. A1 - Hajdu, J. A1 - Treusch, R. A1 - Chapman, H. A1 - Sokolowski-Tinten, K. T1 - Transient respnse of laser-irradiated solids studied with femtosecond short-wavelength free-electron-lasers T2 - Laser Damage Symposium XLI: Annual Symposium on Optical Materials for High Power Lasers CY - Boulder, CO, USA DA - 2009-09-21 PY - 2009 AN - OPUS4-19629 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Transient changes of the optical properties of solids during fs-laser pulse irradiation and its implications for the formation of laser-induced periodic surface structures T2 - Forschungsseminar ULTRA des Fachbereichs Naturwissenschaften der Universität Kassel CY - Kassel, Germany DA - 2009-06-22 PY - 2009 AN - OPUS4-19609 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Schillinger, H. A1 - Pahl, H.-U. A1 - Patel, R. A1 - Bovatsek, J. A1 - Desailly, R. A1 - Bulgakova, N.M. A1 - Endert, H. T1 - High Spped Laser Scribe Systems fpr Large Area Thin Film Solar Cells Manufacturing T2 - 24th European Photovoltaic Solar Energy Conference CY - Hamburg, Germany DA - 2009-09-21 PY - 2009 AN - OPUS4-20047 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Bachelier, G. A1 - Wiggins, S. M. A1 - Siegel, J. A1 - Solis, J. A1 - Sturm, Heinz T1 - Femtosecond Laser Ablation of Semiconductors: Dynamical, Structural and Morphological T2 - European Materials Research Society (EMRS), Spring Meeting, Symposium Q "Laser and Plasma Processing for Advanced Materials" CY - Strasbourg, France DA - 2009-06-08 PY - 2009 AN - OPUS4-19465 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Structural morphological and dynamical aspects of fs-laser induced modification of crystalline silicon T2 - Eingeladener Vortrag im Seminar des Bereichs A des Max-Born-instituts, Adlershof CY - Berlin, Germany DA - 2010-01-12 PY - 2010 AN - OPUS4-20759 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Structural and morphological modifikation of crystalline silicon induced femtosecond laser pulses T2 - internes Seminar des Fraunhofer-Instituts für Keramische Technologien und Systeme (IKTS) CY - Dresden, Germany DA - 2010-01-20 PY - 2010 AN - OPUS4-20805 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Maerten, L. A1 - Rosenfeld, A. A1 - Krüger, Jörg T1 - Transient changes of the optical properties of solids during femtosecond laser pulse irradiation and its implications for the formation of lase-induced periodic surface structures T2 - European Materials Research Society (EMRS) Spring Meeting, Symposium R "Laser processing an diagnostics for micro and nano applications" CY - Strasbourg, France DA - 2010-06-07 PY - 2010 AN - OPUS4-20993 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -