TY - CONF A1 - Bonse, Jörn A1 - Grehn, M. A1 - Seuthe, T. A1 - Reinhardt, F. A1 - Eichler, H. J. A1 - Eberstein, M. T1 - Structural modification of femtosecond laser pulse irradiated potassium-magnesium silicate glasses probed by near edge X-ray absorption spectroscopy T2 - European Materials Research Society (EMRS) Spring Meeting 2013, Symposium V "Laser materials interactions for micro and nano applications" T2 - European Materials Research Society (EMRS) Spring Meeting 2013, Symposium V "Laser materials interactions for micro and nano applications" CY - Strasbourg, France DA - 2013-05-27 PY - 2013 AN - OPUS4-28809 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Höhm, S. A1 - Rohloff, M. A1 - Rosenfeld, A. A1 - Krüger, Jörg T1 - Femtosecond laser-induced periodic surface structures T2 - International High-Power Laser Ablation Conference (HPLA 2012) T2 - International High-Power Laser Ablation Conference (HPLA 2012) CY - Santa Fe, NM, USA DA - 2012-04-30 PY - 2012 AN - OPUS4-24442 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Höhm, S. A1 - Rosenfeld, A. A1 - Krüger, Jörg T1 - Femtosecond laser-induced periodic surface structures on materials with varying band gap T2 - International workshop on laser-induced periodic surface structures T2 - International workshop on laser-induced periodic surface structures CY - Enschede, Netherlands DA - 2011-10-11 PY - 2011 AN - OPUS4-24264 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Stegemann, B. A1 - Schüle, M. A1 - Schultz, C. A1 - Richter, M. A1 - Pahl, H.-U. A1 - Endert, H. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Fink, F. T1 - Novel Laser Structuring Method for Chalkopyrite Solar Cells T2 - Marie Sklodowska-Curie Symposium on the Foundations of Physical Chemistry T2 - Marie Sklodowska-Curie Symposium on the Foundations of Physical Chemistry CY - Warsaw, Poland DA - 2011-11-18 PY - 2011 AN - OPUS4-24920 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Geier, M. A1 - Eberstein, M. A1 - Grießmann, H. A1 - Partsch, U. A1 - Völkel, L. A1 - Böhme, R. A1 - Mann, Guido A1 - Bonse, Jörn A1 - Krüger, Jörg T1 - Impact of laser treatment on phosphoric acid coated multicrystalline silicon PV-wafers T2 - 26th European photovoltaic solar energy conference and exhibition (Proceedings) N2 - The selective emitter is a well-known technology for producing highly doped areas under the metallization grid to improve the solar cell performance. In this work, the influence of laser irradiation on phosphoric acid coated multicrystalline silicon PV-wafers on the wafer surface structure, the phosphorous depth distribution and the electrical contact resistance within the laser treated area as well as the electrical series resistance of laserprocessed solar cells was evaluated. Different laser processing settings were tested including pulsed and continuous wave (cw) laser sources (515 nm, 532 nm, 1064 nm wavelength). Complementary numerical simulations using the finite element method (FEM) were conducted to explain the impact of the laser parameters on the melting behavior (melt duration and geometry). It was found that the melt duration is a key parameter for a successful laser Doping process. Our simulations at a laser wavelengths of 515 nm reveal that low-repetition rate (<500 kHz) laser pulses of 300 ns duration generate a melt duration of ~0.35 µs, whereas upon scanning cw-laser radiation at 532 nm prolongates the melt duration by at least one order of magnitude. Experimentally, the widely used ns-laser pulses did not lead to satisfying laser irradiation results. In contrast, cw-laser radiation and scan velocities of less than 2 m/s led to suitable laser doping featuring low electrical resistances in the laser treated areas. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.2011 KW - Silicon solar cell KW - Selective emitter KW - Laser processing KW - Doping KW - Simulation PY - 2011 SN - 3-936338-27-2 DO - https://doi.org/10.4229/26thEUPVSEC2011-2BV.1.7 SP - 1243 EP - 1247 AN - OPUS4-24995 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Eberstein, M. A1 - Geier, M. A1 - Grießmann, H. A1 - Partsch, U. A1 - Voelkel, L. A1 - Böhme, R. A1 - Pentzien, Simone A1 - Koter, Robert A1 - Mann, Guido A1 - Bonse, Jörn A1 - Krüger, Jörg T1 - Towards an industrial laser doping process for the selective emitter using phosphoric acid as dopant T2 - 26th European photovoltaic solar energy conference and exhibition (Proceedings) N2 - Different laser supported approaches have already been realized, proving the great potential of laserdoped selective emitters (LDSE). However, it is challenging to establish a low-cost process by using pulsed laser tools. So far a single-step process only leads to satisfying results utilizing cw-lasers. In this paper we have examined a two-step process to produce laser-doped selective emitters on multicrystalline textured standard silicon photovoltaic wafers (90-Ω/sq-Emitter, SiN-antireflection coating (ARC)). The precise ARC removal by near-infrared fs-laser pulses (30 fs, 800 nm), and the doping of uncoated silicon wafers by ns-laser pulses (8 ns, 532 nm) were systematically investigated. In the fs-experiment, optimum conditions for ARC removal were identified. In the nsexperiments under suitable conditions (melting regime), the phosphorous concentration underneath the wafer surface was significantly increased and the sheet resistance was reduced by nearly a factor of two. Moreover, electrical measurements on fired metallization fingers deposited on the laser processed wafers showed low contact resistances. Hence, wafer conditioning with combined fs-laser- and ns-laser-processes are expected to be a promising technology for producing selective emitters. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.2011 KW - Laser processing KW - Doping KW - Selective emitter KW - Multicrystalline silicon PY - 2011 SN - 3-936338-27-2 DO - https://doi.org/10.4229/26thEUPVSEC2011-2BV.1.2 SP - 1220 EP - 1223 AN - OPUS4-24996 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Richter, M. A1 - Schultz, C. A1 - Bonse, Jörn A1 - Pahl, H.-U. A1 - Endert, H. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Stegemann, B. A1 - Fink, F. T1 - Laser-ablation behavior of thin-film materials used in silicon and CIGSe based solar cells T2 - 26th European photovoltaic solar energy conference and exhibition (Proceedings) N2 - Structuring of thin-film photovoltaic modules requires basic knowledge of the laser – thin-film interaction in order to adapt the accessible laser parameters, like wavelength, power, repetition rate and scribing speed whilst taking into account the specific material properties of the layer. We have studied the nanosecond laserablation behavior of corresponding layers (i) of silicon based thin-film solar cells with a-Si/µc-Si tandem absorber type and (ii) of back contact and absorber layer of CIGSe solar cells. The respective ablation threshold fluences were determined as integrative parameters describing the specific laser – material interaction. For the threshold determination we used two different methods and developed a new analytical approach taking into account scribing through the glass substrate as it is preferred for most structuring processes. This was done by analyzing the thin film ablation results by means of optical microscopy, profilometry, scanning electron microscopy (SEM). Moreover, we determined the incubation coefficient of the regarded material layers which allows us to predict quantitatively the influence of the spot overlap on the scribing threshold. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.011 KW - Laser processing KW - Ablation KW - Incubation KW - a-Si/my-Si KW - CIGS PY - 2011 SN - 3-936338-27-2 DO - https://doi.org/10.4229/26thEUPVSEC2011-3DV.2.8 SP - 2943 EP - 2946 AN - OPUS4-24997 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Schultz, C. A1 - Schüle, M. A1 - Richter, M. A1 - Pahl, H.-U. A1 - Endert, H. A1 - Bonse, Jörn A1 - Dirnstorfer, I. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Fink, F. A1 - Stegemann, B. T1 - P1, P2 and P3 structuring of CIGSe solar cells with a single laser wavelength T2 - 26th European photovoltaic solar energy conference and exhibition (Proceedings) N2 - Manufacturing of CIGSe thin film solar modules involves typically one laser structuring step (P1) and two mechanical structuring steps (P2 and P3) for serial interconnection. In our approach, complete laser structuring is successfully demonstrated by application of short nanosecond laser pulses (<10 ns) with a single, visible wavelength of 532 nm. The P1 and the P3 trenches are scribed by induced and direct ablation, respectively. For the P2 scribe, the thermal input of the ns laser pulses is used to transform the CIGSe absorber layer locally into a highly conductive compound to provide proper electrical interconnection. These findings promise further simplification and flexibility to thin film solar cell production. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.2011 KW - Laser processing KW - Nanosecond pulses KW - Ablation KW - Cu(InGa)Se2 KW - Electrical properties PY - 2011 SN - 3-936338-27-2 DO - https://doi.org/10.4229/26thEUPVSEC2011-3AV.1.35 SP - 2540 EP - 2543 AN - OPUS4-24998 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Stegemann, B. A1 - Schultz, C. A1 - Schüle, M. A1 - Richter, M. A1 - Pahl, H.-U. A1 - Endert, H. A1 - Bonse, Jörn A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Fink, F. ED - Luschtinetz, T. ED - Lehmann, J. T1 - Neuartige Laserstrukturierung von CIGSe-Dünnschicht-Solarzellen T2 - 18. Symposium "Nutzung regenerativer Energiequellen und Wasserstofftechnik" / VDI-Tagung "Energieland Mecklenburg-Vorpommern" N2 - Ein wesentlicher Vorteil der Dünnschichtphotovoltaik gegenüber der waferbasierten Photovoltaik liegt in der monolithischen Serienverschaltung. Bei der Herstellung von Chalkopyrit(CIGSe) -Dünnschicht-Solarmodulen erfolgen dafür typischerweise ein Laser-Strukturierungsschritt (P1) und zwei mechanische Strukturierungsschritte (P2, P3). In diesem Beitrag wird gezeigt, dass die Strukturierung von CIGSe-Solarmodulen vollständig mit kurzen Laserpulsen (<10 ns Pulsdauer) und einer einzigen Wellenlänge (532 nm) möglich ist. Der P1- und P3-Schnitt erfolgen durch direkte induzierte Ablation. Für den P2-Schnitt wird gezielt der hohe Wärmeeintrag der ns-Laserpulse genutzt, um die CIGSe- Absorberschicht lokal aufzuschmelzen und strukturell so zu verändern, dass eine elektrisch gut leitende Verbindung zwischen Front- und Rückkontakt entsteht. N2 - A major advantage of thin film photovoltaics over wafer-based photovoltaics is the monolithic series connection. Manufacturing of chalcopyrite (CIGSe) thin film solar modules involves typically one laser structuring step (P1) and two mechanical structuring steps (P2 and P3) for serial interconnection. In our approach, complete laser structuring is successfully demonstrated simply by application of short nanosecond laser pulses (<10 ns) with a single, visible wavelength of 532 nm. The P1 and the P3 trenches are scribed by induced direct ablation. For the P2 scribe, the thermal input of the ns laser pulses is used to transform the CIGSe absorber layer locally into a highly conductive compound to provide proper electrical interconnection between the front and back contact. T2 - 18. Symposium "Nutzung regenerativer Energiequellen und Wasserstofftechnik" / VDI-Tagung "Energieland Mecklenburg-Vorpommern" CY - Stralsund, Germany DA - 03.11.2011 KW - Photovoltaik KW - Dünnschichtsolarzellen KW - Chalkopyrite KW - Laserstrukturierung PY - 2011 SN - 978-3-9813334-4-2 SP - 204 EP - 210 AN - OPUS4-24999 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Höhm, S. A1 - Rosenfeld, A. T1 - Femtosecond laser-induced periodic nanostructures T2 - International workshop on "Laser micro and nano structuring: Fundamentals et applications" T2 - International workshop on "Laser micro and nano structuring: Fundamentals et applications" CY - Paris, France DA - 2012-12-10 PY - 2012 AN - OPUS4-27659 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Seuthe, T. A1 - Grehn, M. A1 - Mermillod-Blondin, A. A1 - Eichler, H. J. A1 - Eberstein, M. T1 - Femtosecond laser pulse modification of binary lithium silicate glasses T2 - International workshop on "Laser micro and nano structuring: Fundamentals et applications" T2 - International workshop on "Laser micro and nano structuring: Fundamentals et applications" CY - Paris, France DA - 2012-12-10 PY - 2012 AN - OPUS4-27660 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Höhm, S. A1 - Rosenfeld, A. T1 - Periodic surface structures generated by cross-polarized double femtosecond laser pulse irradiation sequences T2 - Photonics West, SPIE Conference 8607 on Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVIII T2 - Photonics West, SPIE Conference 8607 on Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVIII CY - San Francisco, CA, USA DA - 2013-02-02 PY - 2013 AN - OPUS4-27668 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CHAP A1 - Beke, S. A1 - Sugioka, K. A1 - Midorikawa, K. A1 - Bonse, Jörn ED - Hemsworth, E.J. T1 - Nanaosecond and femtosecond laser ablation of TeO2 crystals: surface characterization and plasma analysis T2 - Laser-induced plasmas: theory and applications N2 - Near-IR femtosecond (fs) (pulse duration = 150 fs, wavelength = 775 nm, repetition rate 1 kHz) and VUV nanosecond (ns) (pulse duration = 20 ns, wavelength = 157 nm, repetition rate 1 to 5 Hz) laser pulse ablation of single-crystalline TeO2 (c-TeO2 ) surfaces was performed in air using the direct focusing technique. A multi-method characterization using optical microscopy, atomic force microscopy and scanning electron microscopy revealed the surface morphology of the ablated craters. This allowed us at each irradiation site to characterize precisely the lateral and vertical dimensions of the laser-ablated craters for different laser pulse energies and number of laser pulses per spot. Based on the obtained information, we quantitatively determined the ablation threshold fluence for the fs laser irradiation when different pulse numbers were applied to the same spot using two independent extrapolation techniques. We found that in the case of NIR fs laser pulse irradiation, the ablation threshold significantly depends on the number of laser pulses applied to the same spot indicating that incubation effects play an important role in this material. In the case of VUV ns laser pulses, the ablation rate is significantly higher due to the high photon energy and the predominantly linear absorption in the material. These results are discussed on the basis of recent models of the interaction of laser pulses with dielectrics. In the second part of this chapter, we use time- of-flight mass spectrometry (TOFMS) to analyze the elemental composition of the ablation products generated upon laser irradiation of c-TeO2 with single fs- (pulse duration ~200 fs, wavelength 398 nm) and ns-pulses (pulse duration 4 ns, wavelength 355 nm). Due to the three order of magnitude different peak intensities of the ns- and fs laser pulses, significant differences were observed regarding the laser-induced species in the plasma plume. Positive singly, doubly and triply charged Te ions (Te+, Te2+, Te3+) in the form of many different isotopes were observed in case of both irradiations. In the case of the ns-laser ablation, the TeO+ formation was negligible compared to the fs case and there was no Te trimer (Te3+) formation observed. It was found that the amplitude of Te ion signals strongly depends on the applied laser pulse energy. Singly charged oxygen ions (O+) are always present as a byproduct in both kinds of laser ablation. KW - Tellurium dioxide crystals KW - Femtosecond laser ablation KW - VUV nanosecond laser ablation KW - Multiphoton absorption KW - Time-of-flight mass spectroscopy KW - Incubation KW - Optical properties KW - Scanning electron microscopy KW - Atomic force microscopy KW - Isotopes PY - 2011 SN - 978-1-61324-851-5 N1 - Serientitel: Physics Research and Technology – Series title: Physics Research and Technology IS - Chapter 4 SP - 77 EP - 96 PB - Nova Science Publishers, Inc. AN - OPUS4-25454 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Femtosecond laser-induced periodic surface structures T2 - Institutskolloquium des Leibniz-Instituts für Oberflächenmodifizierung T2 - Institutskolloquium des Leibniz-Instituts für Oberflächenmodifizierung CY - Leipzig, Germany DA - 2012-06-07 PY - 2012 AN - OPUS4-25531 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Höhm, S. A1 - Rosenfeld, A. A1 - Koter, Robert A1 - Krüger, Jörg T1 - Femtosecond laser-induced periodic surface structures generated in different environments T2 - European Materials Research Society (EMRS) Spring Meeting 2012, Symposium V "Laser materials processing for micro and nano applications" T2 - European Materials Research Society (EMRS) Spring Meeting 2012, Symposium V "Laser materials processing for micro and nano applications" CY - Strasbourg, France DA - 2012-05-12 PY - 2012 AN - OPUS4-25521 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Hertwig, Andreas A1 - Koter, Robert A1 - Weise, Matthias A1 - Beck, Uwe A1 - Reinstädt, Philipp A1 - Griepentrog, Michael A1 - Krüger, Jörg A1 - Picquart, M. A1 - Haro-Poniatowski, E. T1 - Femtosecond laser-induced modification and ablation of hydrogenated amorphous carbon films T2 - European Materials Research Society (EMRS) Spring Meeting 2012, Symposium V "Laser materials processing for micro and nano applications" T2 - European Materials Research Society (EMRS) Spring Meeting 2012, Symposium V "Laser materials processing for micro and nano applications" CY - Strasbourg, France DA - 2012-05-12 PY - 2012 AN - OPUS4-25522 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Koter, Robert A1 - Hartelt, Manfred A1 - Spaltmann, Dirk A1 - Höhm, S. A1 - Rosenfeld, A. A1 - Krüger, Jörg T1 - Femtosecond Laser-induced periodic surface structures on steel for tribological applications T2 - 12th Conference on Laser Ablation, COLA 2013 T2 - 12th Conference on Laser Ablation, COLA 2013 CY - Ischia, Italy DA - 2013-10-06 PY - 2013 AN - OPUS4-29555 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Shymanovich, U. A1 - Barty, A. A1 - Boutet, S. A1 - Bogan, M. A1 - Marchesini, S. A1 - Stojanovic, N. A1 - Sobierajski, R. A1 - Lu, W. A1 - El Kharrazi, M. A1 - Vattilana, M. A1 - Quirin, F. A1 - Brazda, T. A1 - Zastrau, U. A1 - Hau-Riege, S. A1 - Tobey, R. A1 - Ehrke, H. A1 - Cavalleri, A. A1 - Redlin, H. A1 - Düsterer, S. A1 - Frank, M. A1 - Bajt, S. A1 - Schulz, J. A1 - Seibert, M. A1 - Hajdu, J. A1 - Treusch, R. A1 - Chapman, H. A1 - Sokolowski-Tinten, K. T1 - Transient respnse of laser-irradiated solids studied with femtosecond short-wavelength free-electron-lasers T2 - Laser Damage Symposium XLI: Annual Symposium on Optical Materials for High Power Lasers T2 - Laser Damage Symposium XLI: Annual Symposium on Optical Materials for High Power Lasers CY - Boulder, CO, USA DA - 2009-09-21 PY - 2009 AN - OPUS4-19629 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Bulgakova, N.M. A1 - Bulgakov, A.V. A1 - Zhukov, V. P. A1 - Rosenfeld, A. T1 - Fs-laser processing of metals: pulse duration effects and the role of air ionization T2 - COLA 2009, 10th International Conference on Laser Ablation T2 - COLA 2009, 10th International Conference on Laser Ablation CY - Singapore DA - 2009-11-22 PY - 2009 AN - OPUS4-20490 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Sokolowski-Tinten, K. A1 - Barty, A. A1 - Boutet, S. A1 - Shymanovich, U. A1 - Chapman, H. N. A1 - Bogan, M. A1 - Marchesini, S. A1 - Hau-Riege, S. A1 - Stojanovic, N. A1 - Rosandi, Y. A1 - Urbassek, H. M. A1 - Tobey, R. A1 - Ehrke, H. A1 - Cavalleri, A. A1 - Düsterer, S. A1 - Redlin, H. A1 - Frank, M. A1 - Bajt, S. A1 - Schulz, J. A1 - Seibert, M. A1 - Hajdu, J. A1 - Treusch, R. A1 - Bostedt, Ch. A1 - Hoener, M. A1 - Moeller, T. T1 - Short-pulse laser induced melting and ablation studied with time-resolved coherent XUV scattering T2 - Laser Damage Symposium XLII: Annual Symposium on Optical Materials for High Power Lasers T2 - Laser Damage Symposium XLII: Annual Symposium on Optical Materials for High Power Lasers CY - Boulder, CO, USA DA - 2010-09-26 PY - 2010 AN - OPUS4-21686 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -