TY - GEN A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Kautek, Wolfgang A1 - Wrobel, J. M. T1 - Femtosecond pulse laser machining of InP wafers T2 - Laser applications in microelectronic and optoelectronic manufacturing V N2 - Ablation of indium phosphide wafers in air was performed with 130 fs laser pulses at a wavelength of 800 nm at a low repetition rate of 10 Hz. In order to evaluate the role of the incubation effects, the relationship between the number of laser pulses used for the ablation and the threshold fluence was studied. Particular attention was paid to the chemical composition, surface morphology and structural variations of the ablated area. T2 - 5th Laser Applications in Microelectronics and Optoelectronics Manufacturing Conference (LAMOM) CY - San José, CA, USA DA - 240.01.2000 KW - Femtosecond laser ablation KW - Indium phosphide KW - Auger electron spectroscopy PY - 2000 SN - 0-8194-3550-3 SN - 1605-7422 N1 - Serientitel: SPIE proceedings series – Series title: SPIE proceedings series IS - 3933 SP - 280 EP - 287 PB - SPIE CY - Bellingham, Wash. AN - OPUS4-937 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Rudolph, Pascale A1 - Krüger, Jörg A1 - Baudach, Steffen A1 - Kautek, Wolfgang T1 - Femtosecond pulse laser processing of TiN on silicon JF - Applied surface science N2 - Ultrashort pulse laser microstructuring (pulse duration 130 fs, wavelength 800 nm, repetition rate 2 Hz) of titanium nitride (TiN) films on silicon substrates was performed in air using the direct focusing technique. The lateral and vertical precision of laser ablation was evaluated. The TiN ablation threshold changed with the number of pulses applied to the surface due to an incubation effect. An ablation depth per pulse below the penetration depth of light was observed. Columnar structures were formed in the silicon substrate after drilling through the TiN layer. KW - Femtosecond laser ablation KW - Titanium nitride KW - Silicon KW - Optical properties PY - 2000 DO - https://doi.org/10.1016/S0169-4332(99)00481-X SN - 0169-4332 SN - 1873-5584 VL - 154-155 SP - 659 EP - 663 PB - North-Holland CY - Amsterdam AN - OPUS4-802 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Baudach, Steffen A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Kautek, Wolfgang T1 - Ultrashort pulse laser ablation of polycarbonate and polymethylmethacrylate JF - Applied surface science N2 - Ablation experiments with ultrashort laser pulses (pulse duration 150 fs, wavelength 800 nm) on polymers (PC, PMMA) relevant for biomedical technology have been performed in air. The lateral and vertical machining precision was evaluated by optical, atomic force and scanning electron microscopy. The ablation threshold reaches values in the range of 0.5–2.5 J/cm2 and depends significantly on the number of laser pulses applied to the same spot. The hole diameters are influenced by the laser fluence and the number of laser pulses. The relation between the ablation threshold and the number of laser pulses applied to the same spot is described in accordance with an incubation model. KW - Femtosecond laser ablation KW - Polymer KW - Polycarbonate KW - Polymethylmethacrylate PY - 2000 DO - https://doi.org/10.1016/S0169-4332(99)00474-2 SN - 0169-4332 SN - 1873-5584 VL - 154-155 SP - 555 EP - 560 PB - North-Holland CY - Amsterdam AN - OPUS4-803 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Brzezinka, Klaus-Werner A1 - Meixner, A.J. T1 - Modifying single-crystalline silicon by femtosecond laser pulses: an analysis by micro Raman spectroscopy, scanning laser microscopy and atomic force microscopy JF - Applied surface science N2 - The surface modification of single-crystalline silicon induced by single 130 femtosecond (fs) Ti:sapphire laser pulses (wavelength 800 nm) in air is investigated by means of micro Raman spectroscopy (?-RS), atomic force microscopy and scanning laser microscopy. Depending on the laser fluence, in some regions the studies indicate a thin amorphous top-layer as well as ablated and recrystallized zones. The single-pulse threshold fluences for melting, ablation and polycrystalline recrystallization are determined quantitatively. Several different topographical surface structures (rims and protrusions) are found. Their formation is discussed in the context of recent studies of the laser irradiation of silicon. In combination with a thin-film optical model, the thickness of the amorphous layer is determined by two independent and nondestructive optical methods to be in the order of several 10 nm. KW - Femtosecond laser ablation KW - Silicon KW - Raman spectroscopy KW - Atomic force microscopy KW - Laser scanning microscopy PY - 2004 DO - https://doi.org/10.1016/S0169-4332(03)00881-X SN - 0169-4332 SN - 1873-5584 VL - 221 IS - 1-4 SP - 215 EP - 230 PB - North-Holland CY - Amsterdam AN - OPUS4-3224 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Wrobel, J. M. A1 - Brzezinka, Klaus-Werner A1 - Esser, N. A1 - Kautek, Wolfgang T1 - Femtosecond laser irradiation of indium phosphide in air: Raman spectroscopic and atomic force microscopic investigations JF - Applied surface science KW - Femtosecond laser ablation KW - Indium phosphide KW - Raman spectroscopy KW - Atomic force microscopy PY - 2002 SN - 0169-4332 SN - 1873-5584 VL - 202 SP - 272 EP - 282 PB - North-Holland CY - Amsterdam AN - OPUS4-2645 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Höhm, S. A1 - Rosenfeld, A. T1 - Femtosecond laser-induced periodic surface structures JF - Journal of laser applications N2 - The formation of laser-induced periodic surface structures (LIPSS) in different materials (metals, semiconductors, and dielectrics) upon irradiation with linearly polarized fs-laser pulses (τ~30–150 fs, λ~800 nm) in air environment is studied experimentally and theoretically. In metals, predominantly low-spatial-frequency-LIPSS with periods close to the laser wavelength λ are observed perpendicular to the polarization. Under specific irradiation conditions, high-spatial-frequency-LIPSS with sub-100-nm spatial periods (~λ/10) can be generated. For semiconductors, the impact of transient changes of the optical properties to the LIPSS periods is analyzed theoretically and experimentally. In dielectrics, the importance of transient excitation stages in the LIPSS formation is demonstrated experimentally using (multiple) double-fs-laser-pulse irradiation sequences. A characteristic decrease of the LIPSS periods is observed for double-pulse delays of less than 2 ps. KW - Laser-induced periodic surface structures (LIPSS) KW - Femtosecond laser ablation KW - Ultrafast optical techniques KW - Silicon KW - Titanium KW - Silica PY - 2012 DO - https://doi.org/10.2351/1.4712658 SN - 1042-346X SN - 1938-1387 VL - 24 IS - 4 SP - 042006-1 EP - 042006-7 PB - Laser Institute of America CY - Orlando, Fla., USA AN - OPUS4-26198 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Höhm, S. A1 - Rosenfeld, A. A1 - Krüger, Jörg A1 - Bonse, Jörn T1 - Area dependence of femtosecond laser-induced periodic surface structures for varying band gap materials after double pulse excitation JF - Applied surface science N2 - The formation of laser-induced periodic surface structures upon irradiation of titanium, silicon, and fused silica with multiple irradiation sequences consisting of parallel polarized Ti:sapphire femtosecond laser pulse pairs (pulse duration 50–150 fs, central wavelength ~800 nm) is studied experimentally. The temporal delay between the individual near-equal energy fs-laser pulses was varied between 0 and 5 ps with a temporal resolution of better than 0.2 ps. The surface morphology of the irradiated surface areas is characterized by means of scanning electron microscopy (SEM). In all materials a decrease of the rippled surface area is observed for increasing delays. The characteristic delay decay scale is quantified and related to material dependent excitation and energy relaxation processes. KW - Laser-induced periodic surface structures (LIPSS) KW - Femtosecond laser ablation KW - Double-pulse experiments KW - Ultrafast optical techniques KW - Mach-Zehnder interferometer PY - 2013 DO - https://doi.org/10.1016/j.apsusc.2012.10.188 SN - 0169-4332 SN - 1873-5584 VL - 278 SP - 7 EP - 12 PB - North-Holland CY - Amsterdam AN - OPUS4-28601 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CHAP A1 - Beke, S. A1 - Sugioka, K. A1 - Midorikawa, K. A1 - Bonse, Jörn ED - Hemsworth, E.J. T1 - Nanaosecond and femtosecond laser ablation of TeO2 crystals: surface characterization and plasma analysis T2 - Laser-induced plasmas: theory and applications N2 - Near-IR femtosecond (fs) (pulse duration = 150 fs, wavelength = 775 nm, repetition rate 1 kHz) and VUV nanosecond (ns) (pulse duration = 20 ns, wavelength = 157 nm, repetition rate 1 to 5 Hz) laser pulse ablation of single-crystalline TeO2 (c-TeO2 ) surfaces was performed in air using the direct focusing technique. A multi-method characterization using optical microscopy, atomic force microscopy and scanning electron microscopy revealed the surface morphology of the ablated craters. This allowed us at each irradiation site to characterize precisely the lateral and vertical dimensions of the laser-ablated craters for different laser pulse energies and number of laser pulses per spot. Based on the obtained information, we quantitatively determined the ablation threshold fluence for the fs laser irradiation when different pulse numbers were applied to the same spot using two independent extrapolation techniques. We found that in the case of NIR fs laser pulse irradiation, the ablation threshold significantly depends on the number of laser pulses applied to the same spot indicating that incubation effects play an important role in this material. In the case of VUV ns laser pulses, the ablation rate is significantly higher due to the high photon energy and the predominantly linear absorption in the material. These results are discussed on the basis of recent models of the interaction of laser pulses with dielectrics. In the second part of this chapter, we use time- of-flight mass spectrometry (TOFMS) to analyze the elemental composition of the ablation products generated upon laser irradiation of c-TeO2 with single fs- (pulse duration ~200 fs, wavelength 398 nm) and ns-pulses (pulse duration 4 ns, wavelength 355 nm). Due to the three order of magnitude different peak intensities of the ns- and fs laser pulses, significant differences were observed regarding the laser-induced species in the plasma plume. Positive singly, doubly and triply charged Te ions (Te+, Te2+, Te3+) in the form of many different isotopes were observed in case of both irradiations. In the case of the ns-laser ablation, the TeO+ formation was negligible compared to the fs case and there was no Te trimer (Te3+) formation observed. It was found that the amplitude of Te ion signals strongly depends on the applied laser pulse energy. Singly charged oxygen ions (O+) are always present as a byproduct in both kinds of laser ablation. KW - Tellurium dioxide crystals KW - Femtosecond laser ablation KW - VUV nanosecond laser ablation KW - Multiphoton absorption KW - Time-of-flight mass spectroscopy KW - Incubation KW - Optical properties KW - Scanning electron microscopy KW - Atomic force microscopy KW - Isotopes PY - 2011 SN - 978-1-61324-851-5 N1 - Serientitel: Physics Research and Technology – Series title: Physics Research and Technology IS - Chapter 4 SP - 77 EP - 96 PB - Nova Science Publishers, Inc. AN - OPUS4-25454 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Rosenfeld, A. A1 - Rohloff, M. A1 - Höhm, S. A1 - Krüger, Jörg A1 - Bonse, Jörn T1 - Formation of laser-induced periodic surface structures on fused silica upon multiple parallel polarized double-femtosecond-laser-pulse irradiation sequences JF - Applied surface science N2 - The formation of laser-induced periodic surface structures (LIPSS) upon irradiation of fused silica with multiple irradiation sequences of parallel polarized Ti:sapphire femtosecond laser pulse pairs (160 fs pulse duration, 800 nm central wavelength) was studied experimentally. For that purpose, a Michelson interferometer was used to generate near-equal-energy double-pulse sequences allowing the temporal pulse delay between the parallel-polarized individual fs-laser pulses to be varied between 0 and 40 ps with ~0.2 ps temporal resolution. The surface morphologies of the irradiated surface areas were characterized by means of scanning electron and scanning force microscopy. In the sub-ps delay range a strong decrease of the LIPSS periods and the ablation crater depths with the double-pulse delay was observed indicating the importance of the laser-induced free-electron plasma in the conduction band of the solids for the formation of LIPSS. KW - Laser-induced periodic surface structures (LIPSS) KW - Femtosecond laser ablation KW - Double-pulse experiments KW - Fused silica KW - Michelson interferometer PY - 2012 DO - https://doi.org/10.1016/j.apsusc.2011.09.076 SN - 0169-4332 SN - 1873-5584 VL - 258 IS - 23 SP - 9233 EP - 9236 PB - North-Holland CY - Amsterdam AN - OPUS4-26226 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Beke, S. A1 - Sugioka, K. A1 - Midorikawa, K. A1 - Péter, Á. A1 - Nánai, L. A1 - Bonse, Jörn T1 - Characterization of the ablation of TeO2 crystals in air with femtosecond laser pulses JF - Journal of physics D N2 - Femtosecond (fs) laser pulse ablation (pulse duration of 150 fs, wavelength of 775 nm, repetition rate of 1 kHz) of single-crystalline TeO2 surfaces was performed in air using the direct focusing technique. The lateral and vertical dimensions of laser ablated craters as well as the laser damage thresholds were evaluated for different pulse numbers applied to the same spot. The joint observation using optical microscopy, atomic force microscopy and scanning electron microscopy revealed the surface morphology of the ablated craters and also showed that the ablation threshold depends significantly on the number of laser pulses applied to the same spot due to incubation effects. The incubation effects change the absorption processes involved in fs-laser ablation of the transparent material from multiphoton absorption to a single-photon absorption. These results are discussed on the basis of recent models of the interaction of fs-laser pulses with dielectrics. KW - Femtosecond laser ablation KW - Damage threshold KW - TeO2 KW - Dielectrics PY - 2010 DO - https://doi.org/10.1088/0022-3727/43/2/025401 SN - 0022-3727 SN - 1361-6463 VL - 43 IS - 2 SP - 025401-1 - 025401-6 PB - IOP Publ. CY - Bristol AN - OPUS4-20665 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -