TY - CONF A1 - Richter, M. A1 - Schultz, C. A1 - Bonse, Jörn A1 - Pahl, H.-U. A1 - Endert, H. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Stegemann, B. A1 - Fink, F. T1 - Laser-ablation behavior of thin-film materials used in silicon and CIGSe based solar cells N2 - Structuring of thin-film photovoltaic modules requires basic knowledge of the laser – thin-film interaction in order to adapt the accessible laser parameters, like wavelength, power, repetition rate and scribing speed whilst taking into account the specific material properties of the layer. We have studied the nanosecond laserablation behavior of corresponding layers (i) of silicon based thin-film solar cells with a-Si/µc-Si tandem absorber type and (ii) of back contact and absorber layer of CIGSe solar cells. The respective ablation threshold fluences were determined as integrative parameters describing the specific laser – material interaction. For the threshold determination we used two different methods and developed a new analytical approach taking into account scribing through the glass substrate as it is preferred for most structuring processes. This was done by analyzing the thin film ablation results by means of optical microscopy, profilometry, scanning electron microscopy (SEM). Moreover, we determined the incubation coefficient of the regarded material layers which allows us to predict quantitatively the influence of the spot overlap on the scribing threshold. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.011 KW - Laser processing KW - Ablation KW - Incubation KW - a-Si/my-Si KW - CIGS PY - 2011 SN - 3-936338-27-2 U6 - https://doi.org/10.4229/26thEUPVSEC2011-3DV.2.8 SP - 2943 EP - 2946 AN - OPUS4-24997 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Schultz, C. A1 - Schüle, M. A1 - Richter, M. A1 - Pahl, H.-U. A1 - Endert, H. A1 - Bonse, Jörn A1 - Dirnstorfer, I. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Fink, F. A1 - Stegemann, B. T1 - P1, P2 and P3 structuring of CIGSe solar cells with a single laser wavelength N2 - Manufacturing of CIGSe thin film solar modules involves typically one laser structuring step (P1) and two mechanical structuring steps (P2 and P3) for serial interconnection. In our approach, complete laser structuring is successfully demonstrated by application of short nanosecond laser pulses (<10 ns) with a single, visible wavelength of 532 nm. The P1 and the P3 trenches are scribed by induced and direct ablation, respectively. For the P2 scribe, the thermal input of the ns laser pulses is used to transform the CIGSe absorber layer locally into a highly conductive compound to provide proper electrical interconnection. These findings promise further simplification and flexibility to thin film solar cell production. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.2011 KW - Laser processing KW - Nanosecond pulses KW - Ablation KW - Cu(InGa)Se2 KW - Electrical properties PY - 2011 SN - 3-936338-27-2 U6 - https://doi.org/10.4229/26thEUPVSEC2011-3AV.1.35 SP - 2540 EP - 2543 AN - OPUS4-24998 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Beke, S. A1 - Kobayashi, T. A1 - Sugioka, K. A1 - Midorikawa, K. A1 - Bonse, Jörn T1 - Time-of-flight mass spectroscopy of femtosecond and nanosecond laser ablated TeO2 crystals N2 - Single-pulse femtosecond (fs) (pulse duration ~200 fs, wavelength 398 nm) and nanosecond (ns) (pulse duration 4 ns, wavelength 355 nm) laser ablation have been applied in combination with time-of-flight mass spectrometer (TOFMS) to analyze the elemental composition of the plasma plume of single-crystalline telluria (c-TeO2, grown by the balance controlled Czochralski growth method). Due to the three-order difference of the peak intensities of the ns and fs-laser pulses, significant differences were observed regarding the laser-induced species in the plasma plume. Positive singly, doubly and triply charged Te ions (Te+, Te2+, Te3+) in the form of their isotopes were observed in case of both irradiations. In case of the ns-laser ablation the TeO+ formation was negligible compared to the fs case and there was no Te trimer (Te3+) formation observed. It was found that the amplitude of Te ion signals strongly depended on the applied laser pulse energy. Singly charged oxygen ions (O+) are always present as a byproduct in both kinds of laser ablation. KW - Time-of-flight mass spectroscopy KW - Tellurium dioxide crystals KW - second laser KW - Nanosecond laser KW - Ablation PY - 2011 U6 - https://doi.org/10.1016/j.ijms.2010.08.022 SN - 0168-1176 SN - 0020-7381 SN - 1387-3806 SN - 1873-2798 VL - 299 IS - 1 SP - 5 EP - 8 PB - Elsevier B.V. CY - Amsterdam AN - OPUS4-22490 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -