TY - JOUR A1 - Bonse, Jörn A1 - Baudach, Steffen A1 - Kautek, Wolfgang A1 - Krüger, Jörg A1 - Welsch, E. T1 - Femtosecond laser damage of a high reflecting mirror N2 - Multiple pulse investigations of 130-fs Ti:sapphire laser-induced damage of a high reflecting mirror consisting of alternating ?/4-layers of Ta2O5 and SiO2 and a single 500-nm Ta2O5 film were performed. In both cases, fused silica served as the substrate. For a fixed number of 1000 laser pulses per spot, a decrease in the damage threshold fluence of the mirror by a factor of two was observed by changing the repetition rate from 10 Hz to 1 kHz. A single 500-nm Ta2O5 film shows higher damage resistance compared to the mirror. The mirror and the Ta2O5 film samples were partially coated with a 300-nm-thick aluminium layer. The aluminium coating does not influence the damage threshold of the dielectrics underneath. KW - Aluminium KW - Laser ablation KW - Optical coatings KW - Silicon oxide PY - 2002 U6 - https://doi.org/10.1016/S0040-6090(02)00074-3 SN - 0040-6090 IS - 408 SP - 297 EP - 301 PB - Elsevier CY - Amsterdam AN - OPUS4-1382 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Baudach, Steffen A1 - Krüger, Jörg A1 - Kautek, Wolfgang A1 - Lenzner, Matthias T1 - Femtosecond laser ablation of silicon-modification thresholds and morphology N2 - We investigated the initial modification and ablation of crystalline silicon with single and multiple Ti:sapphire laser pulses of 5 to 400 fs duration. In accordance with earlier established models, we found the phenomena amorphization, melting, re-crystallization, nucleated vaporization, and ablation to occur with increasing laser fluence down to the shortest pulse durations. We noticed new morphological features (bubbles) as well as familiar ones (ripples, columns). A nearly constant ablation threshold fluence on the order of 0.2 J/cm2 for all pulse durations and multiple-pulse irradiation was observed. For a duration of ,100 fs, significant incubation can be observed, whereas for 5 fs pulses, the ablation threshold does not depend on the pulse number within the experimental error. For micromachining of silicon, a pulse duration of less than 500 fs is not advantageous. PY - 2002 U6 - https://doi.org/10.1007/s003390100893 SN - 0947-8396 VL - 74 IS - 1 SP - 19 EP - 25 PB - Springer CY - Berlin AN - OPUS4-6328 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Bonse, Jörn A1 - Baudach, Steffen A1 - Krüger, Jörg A1 - Kautek, Wolfgang ED - Exarhos, G. T1 - Femtosecond laser damage in dielectric coatings N2 - Multi-shot investigations of Ti:sapphire laser (wavelength (lambda) approximately equals 800 nm) induced damage were performed in three different laboratories (BAM, Berlin; LZH, Hannover; UNM, Albuquerque). The ablation behavior of a high reflecting mirror consisting of alternating (lambda) /4- layers of Ta2O5 and SiO2 was studied. Fused silica served as substrate. The influence of the pulse duration ((tau) equals 13 - 130 fs), the pulse number (30 - (infinity) ) and the repetition rate (10 Hz - 100 MHz) on the damage threshold will be discussed. T2 - 32nd Annual Boulder Damage Symposium CY - Boulder, CO, USA DA - 2000-10-16 PY - 2001 SN - 0-8194-4036-1 U6 - https://doi.org/10.1117/12.425056 SN - 1605-7422 N1 - Serientitel: SPIE proceedings series – Series title: SPIE proceedings series IS - 4347 SP - 24 EP - 34 PB - International Society for Optical Engineering (SPIE) CY - Bellingham, Wash. AN - OPUS4-6013 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Bonse, Jörn A1 - Baudach, Steffen A1 - Krüger, Jörg A1 - Kautek, Wolfgang ED - Phipps, C. T1 - Femtosecond laser micromachining of technical materials N2 - Micromachining experiments were performed with Ti:sapphire laser pulses (130 fs - 150 fs, 800 nm, approximately 10 Hz) in air. Employing the direct focusing technique, highly absorbing titanium nitride (TiN) and weakly absorbing polyimide (PI) and polymethylmethacrylate (PMMA) served as target materials. The lateral and vertical precision of the laser ablation and morphological features were characterized by scanning force (SFM), scanning electron (SEM) and optical microscopy. For TiN, incubation can be observed, i.e. the single-pulse surface damage threshold (0.26 J/cm2) is by a factor of two greater than the threshold for 100 pulses. Ablation rates below 10 nm per pulse can be achieved. The evolution of sub-wavelength ripples is presented in dependence on pulse number and laser fluence, respectively. The incubation behavior of the polymers can be described by an accumulation model as for TiN. Experiments on PI with varying focal lengths result in the same modification thresholds. Different polarization states of light (linear, circular) lead to a variation of the ablation rate and to various morphological patterns in the ablation craters (wavelength ripples, cones). Swelling of PMMA occurred at fluences below the ablation threshold. T2 - 3rd SPIE's International Conference on High-Power Laser Ablation CY - Santa Fe, NM, USA DA - 24.04.2000 KW - Ablation KW - Femtosecond pulse laser KW - Laser processing KW - Micromachining KW - Polymer KW - Titanium nitride KW - Ripples PY - 2000 SN - 0-8194-3700-X U6 - https://doi.org/10.1117/12.407346 SN - 1605-7422 N1 - Serientitel: SPIE proceedings series – Series title: SPIE proceedings series IS - 4065 SP - 161 EP - 172 PB - SPIE CY - Bellingham, Wash. AN - OPUS4-967 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Krüger, Jörg A1 - Bonse, Jörn A1 - Baudach, Steffen A1 - Kautek, Wolfgang A1 - Lenzner, M. A1 - Wrobel, J. M. T1 - Femtosecond-Pulse Laser Machining of Semiconducting Materials N2 - Summary form only given. Machining investigations of crystalline silicon have been performed with laser pulses at a wavelength of 780 nm in the range between 5 fs and 400 fs. Applying 100 pulses per spot, surface damage thresholds were determined by the measurement of the damage diameter. In this pulse duration regime, the threshold fluences were nearly constant. Single-pulse investigations with 5 fs pulses yielded a value of about 0.15 J cm-2 identical to the multi-pulse experiment. This is in contradiction to the behaviour of dielectrics where incubation effects alter the optical properties down to the 5 fs pulse regime. Employing laser pulses with a duration of 130 fs at a wavelength of 800 nm, single-pulse ablation thresholds of 0.23 J cm-2 and 0.16 J cm-2 were determined for Si and InP in air, respectively. The threshold fluence was calculated from the linear relation between the square of the diameters versus the logarithm of the laser fluences. T2 - CLEO/Europe 2000 ; Conference on Lasers and Electro-Optics Europe ; Conférence Européenne sur les Lasers et l'Electro-Optique ; CLEO/Europe-IQEC CY - Nice, France DA - 2000-09-10 PY - 2000 SN - 0-7803-6319-1 U6 - https://doi.org/10.1109/CLEOE.2000.910410 PB - IEEE Service Center CY - Piscataway, NJ AN - OPUS4-958 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Rudolph, Pascale A1 - Krüger, Jörg A1 - Baudach, Steffen A1 - Kautek, Wolfgang T1 - Femtosecond pulse laser processing of TiN on silicon N2 - Ultrashort pulse laser microstructuring (pulse duration 130 fs, wavelength 800 nm, repetition rate 2 Hz) of titanium nitride (TiN) films on silicon substrates was performed in air using the direct focusing technique. The lateral and vertical precision of laser ablation was evaluated. The TiN ablation threshold changed with the number of pulses applied to the surface due to an incubation effect. An ablation depth per pulse below the penetration depth of light was observed. Columnar structures were formed in the silicon substrate after drilling through the TiN layer. KW - Femtosecond laser ablation KW - Titanium nitride KW - Silicon KW - Optical properties PY - 2000 U6 - https://doi.org/10.1016/S0169-4332(99)00481-X SN - 0169-4332 SN - 1873-5584 VL - 154-155 SP - 659 EP - 663 PB - North-Holland CY - Amsterdam AN - OPUS4-802 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Baudach, Steffen A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Kautek, Wolfgang T1 - Ultrashort pulse laser ablation of polycarbonate and polymethylmethacrylate N2 - Ablation experiments with ultrashort laser pulses (pulse duration 150 fs, wavelength 800 nm) on polymers (PC, PMMA) relevant for biomedical technology have been performed in air. The lateral and vertical machining precision was evaluated by optical, atomic force and scanning electron microscopy. The ablation threshold reaches values in the range of 0.5–2.5 J/cm2 and depends significantly on the number of laser pulses applied to the same spot. The hole diameters are influenced by the laser fluence and the number of laser pulses. The relation between the ablation threshold and the number of laser pulses applied to the same spot is described in accordance with an incubation model. KW - Femtosecond laser ablation KW - Polymer KW - Polycarbonate KW - Polymethylmethacrylate PY - 2000 U6 - https://doi.org/10.1016/S0169-4332(99)00474-2 SN - 0169-4332 SN - 1873-5584 VL - 154-155 SP - 555 EP - 560 PB - North-Holland CY - Amsterdam AN - OPUS4-803 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Baudach, Steffen A1 - Kautek, Wolfgang A1 - Geuss, Markus A1 - Sturm, Heinz T1 - The precision of the femtosecond-pulse laser ablation of TiN films on silicon N2 - Ti:sapphire laser pulses of 130 fs and 800 nm were focused on 3.2-7m-thick TiN films by a 60-mm focal length lens in air. The morphology of the ablated areas generated by laser pulses at a fluence slightly above the ablation threshold was characterized in dependence on the pulse number by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The cavity profiles, depths, diameters, and volumes were quantitatively evaluated by AFM. The polarization state of the laser light is discussed as a further parameter, in addition to fluence and pulse number, that influences and controls the ablation precision of these materials. It was observed that circularly polarized radiation enhances the average ablation rates and reduces the roughness in the cavities by a factor of 2-3 as compared to linearly polarized radiation of the same incident laser fluence. Special attention was paid to the interfacial region between the coating and substrate. Ultrashort-pulse laser drilling into the Si substrate revealed the generation of columnar features which even may surmount the original coating under laser conditions. T2 - 5th International Conference on Laser Ablation ; COLA '99 CY - Göttingen, Germany DA - 1999-07-19 KW - Laser ablation KW - Picosecond PY - 1999 U6 - https://doi.org/10.1007/s003390051425 SN - 0947-8396 VL - 69 IS - 7 SP - S399 EP - S402 PB - Springer CY - Berlin AN - OPUS4-778 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Baudach, Steffen A1 - Bonse, Jörn A1 - Kautek, Wolfgang T1 - Ablation experiments on polyimide with femtosecond laser pulses N2 - Some applications of polymer films require the microstructuring of partly uneven substrates. This cannot be achieved by conventional photolithography, usually performed with ultraviolet short-pulse lasers (excimer, fourth harmonic Nd:YAG). When processing thermally sensitive or undoped polymers with low optical absorption, the use of femtosecond laser pulses can improve the ablation precision, also reducing the heat-affected zone. Therefore, a Ti:sapphire laser system was employed to perform ablation experiments on polyimide (PI). The irradiated areas were evaluated by means of optical and scanning electron microscopy. Highly oriented ripple structures, which are related to the polarization state of the laser pulses, were observed in the cavities. The relationship between the ablation threshold fluence and the number of laser pulses applied to the same spot is described in accordance with an incubation model. T2 - 5th International Conference on Laser Ablation ; COLA '99 CY - Göttingen, Germany DA - 1999-07-19 KW - Polyimide KW - Laser KW - Ablation KW - Femtosecond laser PY - 1999 U6 - https://doi.org/10.1007/s003390051424 SN - 0947-8396 VL - 69 IS - 7 SP - S395 EP - S398 PB - Springer CY - Berlin AN - OPUS4-780 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -