TY - CONF A1 - Florian, Camilo A1 - Kirner, Sabrina V. A1 - Krüger, Jörg A1 - Bonse, Jörn T1 - Surface functionalization by laser-induced periodic surface structures T2 - 2019 ICALEO Conference Proceedings N2 - In recent years, the improved understanding of the formation of laser-induced periodic surface structures (LIPSS) has led to an emerging variety of applications that modify the optical, mechanical and chemical properties of many materials. Such structures strongly depend on the laser beam polarization and are formed usually after irradiation with ultrashort linearly polarized laser pulses. The most accepted explanation for the origin of the structures is based on the interference of the incident laser radiation with electromagnetic surface waves that propagate or scatter at the surface of the irradiated materials. This leads to an intensity modulation that is finally responsible for the selective ablation in the form of parallel structures with periods ranging from hundreds of nanometers up to some micrometers. The versatility when forming such structures is based on the high reproducibility with different wavelength, pulse duration and repetition rate laser sources, customized micro- and nanometric spatial resolutions, and the compatibility with industrially relevant processing speeds when combined with fast scanning devices. In this contribution, we review the latest applications in the rapidly emerging field of surface functionalization through LIPSS, including biomimetic functionalities on fluid transport, control of the wetting properties, specific optical responses in technical materials, improvement of tribological performance on metallic surfaces and bacterial and cell growth for medical devices, among many others. T2 - 38th International Congress on Applications of Lasers & Electro-Optics CY - Orlando, FL, USA DA - 07.10.2019 KW - Laser-induced periodic surface structures (LIPSS) KW - Laser processing KW - Surface functionalization KW - Applications PY - 2019 SN - 978-1-940168-1-42 SP - Paper Nano 404 AN - OPUS4-50070 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Eberstein, M. A1 - Geier, M. A1 - Grießmann, H. A1 - Partsch, U. A1 - Voelkel, L. A1 - Böhme, R. A1 - Pentzien, Simone A1 - Koter, Robert A1 - Mann, Guido A1 - Bonse, Jörn A1 - Krüger, Jörg T1 - Towards an industrial laser doping process for the selective emitter using phosphoric acid as dopant T2 - 26th European photovoltaic solar energy conference and exhibition (Proceedings) N2 - Different laser supported approaches have already been realized, proving the great potential of laserdoped selective emitters (LDSE). However, it is challenging to establish a low-cost process by using pulsed laser tools. So far a single-step process only leads to satisfying results utilizing cw-lasers. In this paper we have examined a two-step process to produce laser-doped selective emitters on multicrystalline textured standard silicon photovoltaic wafers (90-Ω/sq-Emitter, SiN-antireflection coating (ARC)). The precise ARC removal by near-infrared fs-laser pulses (30 fs, 800 nm), and the doping of uncoated silicon wafers by ns-laser pulses (8 ns, 532 nm) were systematically investigated. In the fs-experiment, optimum conditions for ARC removal were identified. In the nsexperiments under suitable conditions (melting regime), the phosphorous concentration underneath the wafer surface was significantly increased and the sheet resistance was reduced by nearly a factor of two. Moreover, electrical measurements on fired metallization fingers deposited on the laser processed wafers showed low contact resistances. Hence, wafer conditioning with combined fs-laser- and ns-laser-processes are expected to be a promising technology for producing selective emitters. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.2011 KW - Laser processing KW - Doping KW - Selective emitter KW - Multicrystalline silicon PY - 2011 SN - 3-936338-27-2 DO - https://doi.org/10.4229/26thEUPVSEC2011-2BV.1.2 SP - 1220 EP - 1223 AN - OPUS4-24996 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Legall, Herbert A1 - Schwanke, Christoph A1 - Pentzien, Simone A1 - Krüger, Jörg T1 - X-ray emission during processing of metals with ultrashort laser pulses N2 - Ultrashort laser pulse micromachining features a high precision. By increasing the repetition rate of the applied laser to several 100 kHz, laser processing becomes quick and cost-effective and make this method attractive for industrial applications. Upon exceeding a critical laser intensity, hard X-ray radiation is generated as a side effect. Even if the emitted X-ray dose per pulse is low, the accumulated X-ray dose becomes significant for high-repetition-rate laser systems so that radiation safety must be considered. T2 - 8th International LIPSS Workshop CY - Bochum, Germany DA - 27.09.2018 KW - X-ray KW - Laser processing KW - Ultrashort KW - Metals PY - 2018 AN - OPUS4-46104 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -