TY - CONF A1 - Zubia Aranburu, Judith A1 - Cappella, Brunero A1 - Zabala Eguren, A. A1 - Buruaga Lamarain, L. A1 - Aginagalde Lopez, A. A1 - Bonse, Jörn A1 - Schwibbert, Karin T1 - Quantification of the adhesion force of E. coli on Ti via single-cell force spectroscopy T2 - Libro de Actas del XL Congreso Anual de la Sociedad Española de Ingeniería Biomédica N2 - Antibiotic resistance is a growing global problem which poses a massive threat to human health. Although human activity contributes to the acceleration of the process, bacteria have a self-driven stabilisation mechanism to protect themselves from such and other external threats: biofilm formation. Nonetheless, it is the adhesion of a single bacterial cell to a surface that triggers the formation of such network of biomolecules and microorganisms, as well as its hazardous consequences. The main objective of this work was to quantify the adhesion force of a single E. coli cell on a Ti substrate via the AFM-related single-cell force spectroscopy, with both the cell and the substrate material being of high clinical relevance. A set of 25 x 25 force displacement curves was acquired with a maximum force of 3.2 nN without dwell time, yielding a topography map and an adhesion force map that showed to be correlated. A mean adhesion force of 0.85 ± 0.175 nN was measured and the presence of cell appendages on the bacterial cell wall was verified through individual force-displacement curves. Bacterial viability was assessed after the measurements via live/dead staining. T2 - XL Congreso Anual de la Sociedad Española de Ingeniería Biomédica CASEIB 2022 CY - Valladolid, Spain DA - 23.11.2022 KW - Bacteria KW - Atomic force microscopy KW - Force distance curve PY - 2022 SN - 978-84-09-45972-8 SP - 217 EP - 220 AN - OPUS4-57039 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Sokolowski-Tinten, K. A1 - Barty, A. A1 - Boutet, S. A1 - Shymanovich, U. A1 - Bogan, M. A1 - Marchesini, S. A1 - Hau-Riege, S. A1 - Stojanovic, N. A1 - Bonse, Jörn A1 - Tobey, R. A1 - Ehrke, H. A1 - Cavalleri, A. A1 - Duesterer, S. A1 - Frank, M. A1 - Bajt, S. A1 - Schulz, J. A1 - Seibert, M. A1 - Hajdu, J. A1 - Treusch, R. A1 - Chapman, H. T1 - Short-pulse laser induced transient structure formation and ablation studied with time-resolved coherent XUV-scattering T2 - Fall meeting of the materials research society 2009 - Symposium MM / Materials research society symposium proceedings N2 - XUV- and X-ray free-electron-lasers (FEL) combine short wavelength, ultrashort pulse duration, spatial coherence and high intensity. This unique combination of properties opens up new possibilities to study the dynamics of non-reversible phenomena with ultrafast temporal and nano- to atomic-scale spatial resolution. In this contribution we wish to present results of time-resolved experiments performed at the XUV-FEL FLASH (HASYLAB/Hamburg) aimed to investigate the nano-scale structural dynamics of laser-irradiated materials. Thin films and fabricated nano-structures, deposited on Si3N4-membranes, have been excited with ultrashort optical laser pulses. The dynamics of the non-reversible structural evolution of the irradiated samples during laser-induced melting and ablation has been studied in an optical pump - XUV-probe configuration by means of single-shot coherent scattering techniques (i.e. diffraction imaging [1]). In a first set of experiments we investigated the formation of laser induced periodic surface structures (LIPSS) on the surface of thin Si-films (thickness 100 nm). In a simplified view LIPPS are generated as a result of interference between the incident laser pulse and surface scattered waves which leads to a periodically modulated energy deposition. Time-resolved scattering using femtosecond XUV-pulses (with a wavelength of 13.5 nm and 7 nm) allowed us to directly follow LIPSS evolution on an ultrafast time-scale and with better than 40 nm spatial resolution. The observed scattering patterns show almost quantitative agreement with theoretical predictions [2] and reveal that the LIPSS start to form already during the 12 ps pump pulse. In the second set of measurements we studied picosecond and femtosecond laser induced ablation and disintegration of fabricated nano-structures. Correlations of coherent diffraction patterns measured at various time delays to the pattern of the undisturbed object show that order in the structure is progressively lost starting from short length scales. This structural rearrangement progresses at close to the speed of sound in the material. Under certain circumstances (e.g. adequate sampling) it became also possible to reconstruct real-space images of the object as it evolves over time [3]. The possibility of femtosecond single-shot imaging of ultrafast dynamic processes with nanoscale resolution provides yet more details of the physical processes involved. [1] H. N. Chapman et al. Nature Phys. 2, 839 (2006). [2] J. F. Young et al., Phys. Rev. B 27, 1155 (1983). [3] A. Barty et al. Nature Phot. 2, 415 (2008). T2 - Fall meeting of the materials research society 2009 CY - Boston, MA, USA DA - 2009-11-30 KW - Femtosecond laser ablation KW - Laser-induced periodic surface structures KW - Time-resolved coherent XUV scattering KW - Semiconductor KW - Silicon PY - 2010 DO - https://doi.org/10.1557/PROC-1230-MM05-03 N1 - Serientitel: Materials Research Society symposium proceedings – Series title: Materials Research Society symposium proceedings VL - 1230E IS - Paper 1230-MM05-03 SP - 1 EP - 6 AN - OPUS4-21438 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Seuthe, T. A1 - Grehn, M. A1 - Mermillod-Blondin, A. A1 - Bonse, Jörn A1 - Eberstein, M. T1 - Compositional dependent response of silica-based glasses after femtosecond laser pulse irradiation T2 - Laser-induced damage in optical materials - 2013 N2 - Femtosecond laser pulse irradiation of inorganic glasses allows a selective modification of the optical properties with very high precision. This results in the possibility for the production of three-dimensional functional optical elements in the interior of glass materials, such as optical data storage, waveguide writing, etc. The influence of the chemical glass composition to the response upon ultrashort laser irradiation has not been studied systematically. For that, simple silicabased model glasses composed of systematically varying alkaline- and earth-alkaline components were prepared, irradiated on the surface and in the volume with single fs-laser pulses (~130 fs, 800 nm), and were subsequently analyzed by means of micro-Raman spectroscopy and quantitative phase contrast microscopy in order to account for changes in the glass structure and for alterations of the optical refractive index, respectively. The Raman spectroscopic studies of the laser-irradiated spots revealed no change in the average binding configuration (the so called Q-structure), but local changes of bond-angles and bond-lengths within the glass structure structure. Those changes are explained by structural relaxation of the glass network due to densification caused by a transient laser-induced plasma generation and the following shock wave and other thermal phenomena. Glasses with a low amount of network modifiers show changes in the Si-O network while glasses with a high amount of network modifiers react primarily via variation of the nonbridging oxygen ions. The results are discussed in terms of possible structural response mechanisms and conclusions are outlined regarding glass compositions with technical suitability for fs-laser modifications. T2 - Laser-induced damage in optical materials CY - Boulder, Colorado, USA DA - 2013-09-22 KW - Femtosecond laser modifications KW - Raman spectroscopy KW - Glass KW - Femtosecond phenomena KW - Networks KW - Silica KW - Laser irradiation KW - Lasers KW - Micro raman spectroscopy KW - Microscopy KW - Optical components KW - Optical storage PY - 2013 DO - https://doi.org/10.1117/12.2028713 N1 - Serientitel: SPIE proceedings series – Series title: SPIE proceedings series VL - 8885 SP - 1 EP - 8(?) AN - OPUS4-29539 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Seuthe, T. A1 - Grehn, M. A1 - Mermillod-Blondin, A. A1 - Bonse, Jörn A1 - Eberstein, M. T1 - Requirements on glasses for femtosecond-laser based micro-structuring T2 - CICMT 2015 - 11th International conference on ceramic interconnect & ceramic microsystems technologies (Proceedings) N2 - In this work, glasses with systematically varied compositions were manufactured and irradiated by single Ti:sapphire fs-laserpulses (800 nm, 120 fs), focused at the surface and into the bulk of the glass materials. The samples were tested for their ablation threshold fluence as well as for structural changes using µ-Raman-spectroscopy. Correlations between the glass composition, the material-ablation on the glass surface and the permanent changes of the refractive index inside the glass volume after the irradiation by fs-laser pulses were obtained. The results show, that the structural modifications found at the surface of the glasses and inside its volume are closely related. However, while the ablation threshold fluence of the glass surface primarily depends on the glass dissociation energy, the permanent refractive index change inside the volume is rather determined by its ability for absorbing the fs-laser pulses and the subsequent relaxation processes. The results of this work provide some guidance on how the glass composition can be varied in order to optimize the fs-laser induced modification of dielectrics. T2 - 11th International Conference on Ceramic Interconnect & Ceramic Microsystems Technologies CY - Dresden, Germany DA - 20.04.2015 PY - 2015 SN - 978-1-5108-0456-2 DO - https://doi.org/10.4071/CICMT-TA24 SP - 47 EP - 53 PB - Curran CY - Red Hook, NY, USA AN - OPUS4-34755 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Schultz, C. A1 - Schüle, M. A1 - Stelmaszczyk, K. A1 - Bonse, Jörn A1 - Witteck, R. A1 - Weizman, M. A1 - Rhein, H. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Stegemann, B. A1 - Fink, F. T1 - Film side laser patterning of molybdenum thin films sputter-deposited onto glass T2 - 27th European photovoltaic solar energy conference and exhibition (Proceedings) N2 - Serial interconnection of CIGSe thin film solar modules involves typically glass-side laser patterning of the molybdenum layer (P1 scribe). In this paper we present a working principle of P1 film side patterning. The investigated samples were sputter-deposited onto soda-lime glass substrates. For understanding the fundamental ablation behavior, two kinds of layer systems were studied: on the one hand monolayer systems which are compressively stressed and on the other hand bilayer systems, consisting of a tensile stressed layer on the substrate and a second layer on top. The film-side ablation process was studied using a nanosecond as well as a picosecond laser source. The influence of intrinsic stress was studied by XRD. Time resolved spectroscopy reveals the formation of plasma as important driving mechanism for ablation. It is shown that by proper adaption of the sputter conditions high-quality P1 film side patterning is achieved. T2 - 27th European photovoltaic solar energy conference and exhibition CY - Frankfurt, Germany DA - 24.09.2012 KW - Laser processing KW - Molybdenum KW - Strain KW - Ablation KW - Sputter deposition KW - Cu(InGa)Se2 PY - 2012 SN - 3-936338-28-0 DO - https://doi.org/10.4229/27thEUPVSEC2012-3CV.1.6 SP - 2266 EP - 2272 AN - OPUS4-27208 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Schultz, C. A1 - Schüle, M. A1 - Richter, M. A1 - Pahl, H.-U. A1 - Endert, H. A1 - Bonse, Jörn A1 - Dirnstorfer, I. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Fink, F. A1 - Stegemann, B. T1 - P1, P2 and P3 structuring of CIGSe solar cells with a single laser wavelength T2 - 26th European photovoltaic solar energy conference and exhibition (Proceedings) N2 - Manufacturing of CIGSe thin film solar modules involves typically one laser structuring step (P1) and two mechanical structuring steps (P2 and P3) for serial interconnection. In our approach, complete laser structuring is successfully demonstrated by application of short nanosecond laser pulses (<10 ns) with a single, visible wavelength of 532 nm. The P1 and the P3 trenches are scribed by induced and direct ablation, respectively. For the P2 scribe, the thermal input of the ns laser pulses is used to transform the CIGSe absorber layer locally into a highly conductive compound to provide proper electrical interconnection. These findings promise further simplification and flexibility to thin film solar cell production. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.2011 KW - Laser processing KW - Nanosecond pulses KW - Ablation KW - Cu(InGa)Se2 KW - Electrical properties PY - 2011 SN - 3-936338-27-2 DO - https://doi.org/10.4229/26thEUPVSEC2011-3AV.1.35 SP - 2540 EP - 2543 AN - OPUS4-24998 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Schmid, M. A1 - Heidmann, B. A1 - Ringleb, F. A1 - Eylers, K. A1 - Ernst, O. A1 - Andree, Stefan A1 - Bonse, Jörn A1 - Boeck, T. A1 - Krüger, Jörg T1 - Locally grown Cu(In,Ga)Se2 micro islands for concentrator solar cells T2 - Proceedings of SPIE 10527, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VII N2 - Light concentration opens up the path to enhanced material efficiency of solar cells via increased conversion efficiency and decreased material requirement. For true material saving, a fabrication method allowing local growth of high quality absorber material is essential. We present two scalable fs-laser based approaches for bottom-up growth of Cu(In,Ga)Se2 micro islands utilizing either site-controlled assembly of In(,Ga) droplets on laser-patterned substrates during physical vapor deposition, or laser-induced forward transfer of (Cu,In,Ga) layers for local precursor arrangement. The Cu(In,Ga)Se2 absorbers formed after selenization can deliver working solar devices showing efficiency enhancement under light concentration. T2 - SPIE OPTO, 2018 CY - San Francisco, USA DA - 29.01.2018 KW - Chalcopyrite KW - Cu(In,Ga)Se2 KW - Fs-laser patterning KW - Laser-induced forward transfer KW - Micro solar cell PY - 2018 SN - 978-1-5106-1540-3 SN - 0277-786X SN - 1996-756X VL - 10527 SP - 1052707-1 EP - 1052707-9 PB - SPIE CY - Bellingham, WA, USA AN - OPUS4-44450 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Richter, M. A1 - Schultz, C. A1 - Bonse, Jörn A1 - Pahl, H.-U. A1 - Endert, H. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Stegemann, B. A1 - Fink, F. T1 - Laser-ablation behavior of thin-film materials used in silicon and CIGSe based solar cells T2 - 26th European photovoltaic solar energy conference and exhibition (Proceedings) N2 - Structuring of thin-film photovoltaic modules requires basic knowledge of the laser – thin-film interaction in order to adapt the accessible laser parameters, like wavelength, power, repetition rate and scribing speed whilst taking into account the specific material properties of the layer. We have studied the nanosecond laserablation behavior of corresponding layers (i) of silicon based thin-film solar cells with a-Si/µc-Si tandem absorber type and (ii) of back contact and absorber layer of CIGSe solar cells. The respective ablation threshold fluences were determined as integrative parameters describing the specific laser – material interaction. For the threshold determination we used two different methods and developed a new analytical approach taking into account scribing through the glass substrate as it is preferred for most structuring processes. This was done by analyzing the thin film ablation results by means of optical microscopy, profilometry, scanning electron microscopy (SEM). Moreover, we determined the incubation coefficient of the regarded material layers which allows us to predict quantitatively the influence of the spot overlap on the scribing threshold. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.011 KW - Laser processing KW - Ablation KW - Incubation KW - a-Si/my-Si KW - CIGS PY - 2011 SN - 3-936338-27-2 DO - https://doi.org/10.4229/26thEUPVSEC2011-3DV.2.8 SP - 2943 EP - 2946 AN - OPUS4-24997 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Mermillod-Blondin, A. A1 - Seuthe, T. A1 - Eberstein, M. A1 - Grehn, M. A1 - Bonse, Jörn A1 - Rosenfeld, A. ED - Gorecki, C. ED - Asundi, A. K. ED - Osten, W. T1 - Quantitative estimate of fs-laser induced refractive index changes in the bulk of various transparent materials T2 - Optical Micro- and Nanometrology V (Proceedings of SPIE) N2 - Over the past years, many applications based on laser-induced refractive index changes in the volume of transparent materials have been demonstrated. Ultrashort pulse lasers offer the possibility to process bulky transparent materials in three dimensions, suggesting that direct laser writing will play a decisive role in the development of integrated micro-optics. At the present time, applications such as 3D long term data storage or embedded laser marking are already into the phase of industrial development. However, a quantitative estimate of the laser-induced refractive index change is still very challenging to obtain. On another hand, several microscopy techniques have been recently developed to characterize bulk refractive index changes in-situ. They have been mostly applied to biological purposes. Among those, spatial light interference microscopy (SLIM), offers a very good robustness with minimal post acquisition data processing. In this paper, we report on using SLIM to measure fs-laser induced refractive index changes in different common glassy materials, such as fused silica and borofloat glass (B33). The advantages of SLIM over classical phase-contrast microscopy are discussed. T2 - Optical Micro- and Nanometrology V CY - Brussels, Belgium DA - 14.04.2014 KW - Laser material processing KW - Quantitative phase-contrast microscopy KW - Spatial light interference microscopy KW - Nanometrology PY - 2014 DO - https://doi.org/10.1117/12.2051590 VL - 9132 SP - Artikel 91320X, 1 EP - 6 AN - OPUS4-30638 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Mermillod-Blondin, A. A1 - Mauclair, C. A1 - Rosenfeld, A. A1 - Bonse, Jörn A1 - Stoian, R. A1 - Audouard, E. T1 - Time-resolved imaging of bulk a-SiO2 upon various ultrashort excitation sequences T2 - Proceedings of SPIE - Photonics West 2011 N2 - Ultrashort pulses lasers are tools of choice for functionalizing the bulk of transparent materials. In particular, direct photoinscription of simple photonic functions have been demonstrated. Those elementary functions rely on the local refractive index change induced when focusing an ultrashort pulse in the volume of a transparent material. The range of possibilities offered by direct photoinscription is still under investigation. To help understanding, optimizing and assessing the full potential of this method, we developed a time-resolved phase contrast microscopy setup. The imaginary part (absorption) and the real part of the laser-induced complex refractive index can be visualized in the irradiated region. The setup is based on a commercially available phase contrast microscope extended into a pump-probe scheme. The originality of our approach is that the illumination is performed by using a pulsed laser source (i.e. a probe beam). Speckle-related issues are solved by employing adequate sets of diffusers. This laser-microscopy technique has a spatial resolution of 650 nm, and the impulse response is about 300 fs. The laser-induced refractive index changes can be tracked up to milliseconds after the energy deposition. The excitation beam (the pump) is focused with a microscope objective (numerical aperture of 0.45) into the bulk of an a-SiO2 sample. The pump beam can be temporally shaped with a SLM-based pulse shaping unit. This additional degree of flexibility allows for observing different interaction regimes. For instance, bulk material processing with femtosecond and picosecond duration pulses will be studied. T2 - Photonics West 2011 CY - San Francisco, CA, USA DA - 22.01.2011 PY - 2011 DO - https://doi.org/10.1117/12.876687 VL - 7925 IS - 79250R SP - 1 EP - 7 AN - OPUS4-23332 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -