TY - CONF A1 - Schultz, C. A1 - Schüle, M. A1 - Richter, M. A1 - Pahl, H.-U. A1 - Endert, H. A1 - Bonse, Jörn A1 - Dirnstorfer, I. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Fink, F. A1 - Stegemann, B. T1 - P1, P2 and P3 structuring of CIGSe solar cells with a single laser wavelength N2 - Manufacturing of CIGSe thin film solar modules involves typically one laser structuring step (P1) and two mechanical structuring steps (P2 and P3) for serial interconnection. In our approach, complete laser structuring is successfully demonstrated by application of short nanosecond laser pulses (<10 ns) with a single, visible wavelength of 532 nm. The P1 and the P3 trenches are scribed by induced and direct ablation, respectively. For the P2 scribe, the thermal input of the ns laser pulses is used to transform the CIGSe absorber layer locally into a highly conductive compound to provide proper electrical interconnection. These findings promise further simplification and flexibility to thin film solar cell production. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.2011 KW - Laser processing KW - Nanosecond pulses KW - Ablation KW - Cu(InGa)Se2 KW - Electrical properties PY - 2011 SN - 3-936338-27-2 DO - https://doi.org/10.4229/26thEUPVSEC2011-3AV.1.35 SP - 2540 EP - 2543 AN - OPUS4-24998 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Sokolowski-Tinten, K. A1 - Barty, A. A1 - Boutet, S. A1 - Shymanovich, U. A1 - Bogan, M. A1 - Marchesini, S. A1 - Hau-Riege, S. A1 - Stojanovic, N. A1 - Bonse, Jörn A1 - Tobey, R. A1 - Ehrke, H. A1 - Cavalleri, A. A1 - Duesterer, S. A1 - Frank, M. A1 - Bajt, S. A1 - Schulz, J. A1 - Seibert, M. A1 - Hajdu, J. A1 - Treusch, R. A1 - Chapman, H. T1 - Short-pulse laser induced transient structure formation and ablation studied with time-resolved coherent XUV-scattering N2 - XUV- and X-ray free-electron-lasers (FEL) combine short wavelength, ultrashort pulse duration, spatial coherence and high intensity. This unique combination of properties opens up new possibilities to study the dynamics of non-reversible phenomena with ultrafast temporal and nano- to atomic-scale spatial resolution. In this contribution we wish to present results of time-resolved experiments performed at the XUV-FEL FLASH (HASYLAB/Hamburg) aimed to investigate the nano-scale structural dynamics of laser-irradiated materials. Thin films and fabricated nano-structures, deposited on Si3N4-membranes, have been excited with ultrashort optical laser pulses. The dynamics of the non-reversible structural evolution of the irradiated samples during laser-induced melting and ablation has been studied in an optical pump - XUV-probe configuration by means of single-shot coherent scattering techniques (i.e. diffraction imaging [1]). In a first set of experiments we investigated the formation of laser induced periodic surface structures (LIPSS) on the surface of thin Si-films (thickness 100 nm). In a simplified view LIPPS are generated as a result of interference between the incident laser pulse and surface scattered waves which leads to a periodically modulated energy deposition. Time-resolved scattering using femtosecond XUV-pulses (with a wavelength of 13.5 nm and 7 nm) allowed us to directly follow LIPSS evolution on an ultrafast time-scale and with better than 40 nm spatial resolution. The observed scattering patterns show almost quantitative agreement with theoretical predictions [2] and reveal that the LIPSS start to form already during the 12 ps pump pulse. In the second set of measurements we studied picosecond and femtosecond laser induced ablation and disintegration of fabricated nano-structures. Correlations of coherent diffraction patterns measured at various time delays to the pattern of the undisturbed object show that order in the structure is progressively lost starting from short length scales. This structural rearrangement progresses at close to the speed of sound in the material. Under certain circumstances (e.g. adequate sampling) it became also possible to reconstruct real-space images of the object as it evolves over time [3]. The possibility of femtosecond single-shot imaging of ultrafast dynamic processes with nanoscale resolution provides yet more details of the physical processes involved. [1] H. N. Chapman et al. Nature Phys. 2, 839 (2006). [2] J. F. Young et al., Phys. Rev. B 27, 1155 (1983). [3] A. Barty et al. Nature Phot. 2, 415 (2008). T2 - Fall meeting of the materials research society 2009 CY - Boston, MA, USA DA - 2009-11-30 KW - Femtosecond laser ablation KW - Laser-induced periodic surface structures KW - Time-resolved coherent XUV scattering KW - Semiconductor KW - Silicon PY - 2010 DO - https://doi.org/10.1557/PROC-1230-MM05-03 N1 - Serientitel: Materials Research Society symposium proceedings – Series title: Materials Research Society symposium proceedings VL - 1230E IS - Paper 1230-MM05-03 SP - 1 EP - 6 AN - OPUS4-21438 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Richter, M. A1 - Schultz, C. A1 - Bonse, Jörn A1 - Pahl, H.-U. A1 - Endert, H. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Stegemann, B. A1 - Fink, F. T1 - Laser-ablation behavior of thin-film materials used in silicon and CIGSe based solar cells N2 - Structuring of thin-film photovoltaic modules requires basic knowledge of the laser – thin-film interaction in order to adapt the accessible laser parameters, like wavelength, power, repetition rate and scribing speed whilst taking into account the specific material properties of the layer. We have studied the nanosecond laserablation behavior of corresponding layers (i) of silicon based thin-film solar cells with a-Si/µc-Si tandem absorber type and (ii) of back contact and absorber layer of CIGSe solar cells. The respective ablation threshold fluences were determined as integrative parameters describing the specific laser – material interaction. For the threshold determination we used two different methods and developed a new analytical approach taking into account scribing through the glass substrate as it is preferred for most structuring processes. This was done by analyzing the thin film ablation results by means of optical microscopy, profilometry, scanning electron microscopy (SEM). Moreover, we determined the incubation coefficient of the regarded material layers which allows us to predict quantitatively the influence of the spot overlap on the scribing threshold. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.011 KW - Laser processing KW - Ablation KW - Incubation KW - a-Si/my-Si KW - CIGS PY - 2011 SN - 3-936338-27-2 DO - https://doi.org/10.4229/26thEUPVSEC2011-3DV.2.8 SP - 2943 EP - 2946 AN - OPUS4-24997 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Legall, Herbert A1 - Schwanke, Christoph A1 - Bonse, Jörn A1 - Krüger, Jörg T1 - X-ray emission during ultrashort pulse laser processing N2 - The industrial use of ultrashort laser pulses has made considerable progress in recent years. The reasons for this lie in the availability of high average powers at pulse repetition rates in the several 100 kHz range. The advantages of using ultrashort laser pulses in terms of processing precision can thus be fully exploited. However, high laser intensities on the workpiece can also lead to the generation of unwanted X-rays. Even if the emitted X-ray dose per pulse is low, the accumulated X-ray dose can become significant for high-repetition-rate laser systems so that X-ray exposure safety limits must be considered. The X-ray emission during ultrashort pulse laser processing was investigated for a pulse duration of 925 fs at 1030 nm wavelength and 400 kHz repetition rate. Industrially relevant materials such as steel,aluminum and glass were treated. Tungsten served as reference. X-ray spectra were recorded, and X-ray dose measurements were performed for laser treatment in air. For laser intensities > 2 × 10^13 W/cm2, X-ray doses exceeding the regulatory exposure limits for members of the public were found. Suitable X-ray protection strategies are proposed. T2 - SPIE Photonics West CY - San Francisco, USA DA - 02.02.2019 KW - Laser-induced X-ray emission KW - Ultrashort laser material interaction KW - Radiation protection PY - 2019 SN - 978-1-5106-2459-7 DO - https://doi.org/10.1117/12.2516165 SN - 0277-786X SN - 1996-756X VL - 10908 SP - 1090802-1 EP - 1090802-7 PB - SPIE - The international society for optics and photonics CY - Bellingham, WA, USA AN - OPUS4-47510 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Höhm, S. A1 - Kirner, Sabrina A1 - Rosenfeld, A. A1 - Krüger, Jörg T1 - Laser-induced periodic surface structures (LIPSS) - A scientific evergreen N2 - The current state in the field of laser-induced periodic surface structures (LIPSS, ripples) is reviewed. Their formation mechanisms are analyzed in ultrafast experiments (time-resolved diffraction and polarization controlled double-pulse experiments) and technological applications are demonstrated. T2 - Conference on Lasers and Electro-Optics (CLEO) - Science and Innovations 2016 CY - San Jose, CA, USA DA - 05.06.2016 KW - Laser materials processing KW - Optics at surfaces KW - Ultrafast phenomena KW - Laser-induced periodic surface strcutures (LIPSS) KW - Femtosecond laser ablation PY - 2016 SN - 978-1-943580-11-8 DO - https://doi.org/10.1364/CLEO_SI.2016.STh1Q.3 SP - STh1Q.3, 1 EP - 2 PB - Optical Society of America AN - OPUS4-37072 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Seuthe, T. A1 - Grehn, M. A1 - Mermillod-Blondin, A. A1 - Bonse, Jörn A1 - Eberstein, M. T1 - Compositional dependent response of silica-based glasses after femtosecond laser pulse irradiation N2 - Femtosecond laser pulse irradiation of inorganic glasses allows a selective modification of the optical properties with very high precision. This results in the possibility for the production of three-dimensional functional optical elements in the interior of glass materials, such as optical data storage, waveguide writing, etc. The influence of the chemical glass composition to the response upon ultrashort laser irradiation has not been studied systematically. For that, simple silicabased model glasses composed of systematically varying alkaline- and earth-alkaline components were prepared, irradiated on the surface and in the volume with single fs-laser pulses (~130 fs, 800 nm), and were subsequently analyzed by means of micro-Raman spectroscopy and quantitative phase contrast microscopy in order to account for changes in the glass structure and for alterations of the optical refractive index, respectively. The Raman spectroscopic studies of the laser-irradiated spots revealed no change in the average binding configuration (the so called Q-structure), but local changes of bond-angles and bond-lengths within the glass structure structure. Those changes are explained by structural relaxation of the glass network due to densification caused by a transient laser-induced plasma generation and the following shock wave and other thermal phenomena. Glasses with a low amount of network modifiers show changes in the Si-O network while glasses with a high amount of network modifiers react primarily via variation of the nonbridging oxygen ions. The results are discussed in terms of possible structural response mechanisms and conclusions are outlined regarding glass compositions with technical suitability for fs-laser modifications. T2 - Laser-induced damage in optical materials CY - Boulder, Colorado, USA DA - 2013-09-22 KW - Femtosecond laser modifications KW - Raman spectroscopy KW - Glass KW - Femtosecond phenomena KW - Networks KW - Silica KW - Laser irradiation KW - Lasers KW - Micro raman spectroscopy KW - Microscopy KW - Optical components KW - Optical storage PY - 2013 DO - https://doi.org/10.1117/12.2028713 N1 - Serientitel: SPIE proceedings series – Series title: SPIE proceedings series VL - 8885 SP - 1 EP - 8(?) AN - OPUS4-29539 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Seuthe, T. A1 - Grehn, M. A1 - Mermillod-Blondin, A. A1 - Bonse, Jörn A1 - Eberstein, M. T1 - Requirements on glasses for femtosecond-laser based micro-structuring N2 - In this work, glasses with systematically varied compositions were manufactured and irradiated by single Ti:sapphire fs-laserpulses (800 nm, 120 fs), focused at the surface and into the bulk of the glass materials. The samples were tested for their ablation threshold fluence as well as for structural changes using µ-Raman-spectroscopy. Correlations between the glass composition, the material-ablation on the glass surface and the permanent changes of the refractive index inside the glass volume after the irradiation by fs-laser pulses were obtained. The results show, that the structural modifications found at the surface of the glasses and inside its volume are closely related. However, while the ablation threshold fluence of the glass surface primarily depends on the glass dissociation energy, the permanent refractive index change inside the volume is rather determined by its ability for absorbing the fs-laser pulses and the subsequent relaxation processes. The results of this work provide some guidance on how the glass composition can be varied in order to optimize the fs-laser induced modification of dielectrics. T2 - 11th International Conference on Ceramic Interconnect & Ceramic Microsystems Technologies CY - Dresden, Germany DA - 20.04.2015 PY - 2015 SN - 978-1-5108-0456-2 DO - https://doi.org/10.4071/CICMT-TA24 SP - 47 EP - 53 PB - Curran CY - Red Hook, NY, USA AN - OPUS4-34755 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Andree, Stefan A1 - Heidmann, B. A1 - Ringleb, F. A1 - Eylers, K. A1 - Bonse, Jörn A1 - Boeck, T. A1 - Schmid, M. A1 - Krüger, Jörg T1 - Femtosecond laser pulses for photovoltaic bottom-up strategies N2 - A promising technology in photovoltaics is based on micro-concentrator solar cells, where the photovoltaic active area is realized as an array of sub-millimeter sized cells onto which the incident light is focused via microlenses. This approach allows to increase the cell efficiency and to realize much more compact modules compared to macroscopic concentrator devices. At the same time, expensive raw materials can be saved, which is of interest, for example, with respect to indium in the case of copper-indium-gallium-diselenide (CIGSe) thin film solar cells. Two methods to produce micro-sized precursors of CIGSe absorbers on molybdenum are presented using 30-fs laser pulses at 790 nm wavelength. On the one hand, a multi pulse surface structuring of the molybdenum film or the underlying glass substrate and a subsequent physical vapor deposition were used for a site-selective aggregation of indium droplets. On the other hand, a single pulse laser-induced forward transfer was utilized to selectively deposit combined copper-indium precursor pixels on the molybdenum back contact of the solar cell. Post-processing (selenization, isolation, contacting) of the laser-generated micro-sized precursors results in functional CIGSe solar cells. T2 - 10. Mittweidaer Lasertagung CY - Mittweida, Germany DA - 16.11.2017 KW - Copper indium gallium diselenide (CIGSe) KW - Micro solar cell KW - Femtosecond laser KW - Laser ablation KW - Laser-induced forward transfer (LIFT) PY - 2017 SN - 1437-7624 VL - 2 SP - 1 EP - 4 PB - Hochschule Mittweida CY - Mittweida AN - OPUS4-42988 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Zubia Aranburu, Judith A1 - Cappella, Brunero A1 - Zabala Eguren, A. A1 - Buruaga Lamarain, L. A1 - Aginagalde Lopez, A. A1 - Bonse, Jörn A1 - Schwibbert, Karin T1 - Quantification of the adhesion force of E. coli on Ti via single-cell force spectroscopy N2 - Antibiotic resistance is a growing global problem which poses a massive threat to human health. Although human activity contributes to the acceleration of the process, bacteria have a self-driven stabilisation mechanism to protect themselves from such and other external threats: biofilm formation. Nonetheless, it is the adhesion of a single bacterial cell to a surface that triggers the formation of such network of biomolecules and microorganisms, as well as its hazardous consequences. The main objective of this work was to quantify the adhesion force of a single E. coli cell on a Ti substrate via the AFM-related single-cell force spectroscopy, with both the cell and the substrate material being of high clinical relevance. A set of 25 x 25 force displacement curves was acquired with a maximum force of 3.2 nN without dwell time, yielding a topography map and an adhesion force map that showed to be correlated. A mean adhesion force of 0.85 ± 0.175 nN was measured and the presence of cell appendages on the bacterial cell wall was verified through individual force-displacement curves. Bacterial viability was assessed after the measurements via live/dead staining. T2 - XL Congreso Anual de la Sociedad Española de Ingeniería Biomédica CASEIB 2022 CY - Valladolid, Spain DA - 23.11.2022 KW - Bacteria KW - Atomic force microscopy KW - Force distance curve PY - 2022 SN - 978-84-09-45972-8 SP - 217 EP - 220 AN - OPUS4-57039 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Schmid, M. A1 - Heidmann, B. A1 - Ringleb, F. A1 - Eylers, K. A1 - Ernst, O. A1 - Andree, Stefan A1 - Bonse, Jörn A1 - Boeck, T. A1 - Krüger, Jörg T1 - Locally grown Cu(In,Ga)Se2 micro islands for concentrator solar cells N2 - Light concentration opens up the path to enhanced material efficiency of solar cells via increased conversion efficiency and decreased material requirement. For true material saving, a fabrication method allowing local growth of high quality absorber material is essential. We present two scalable fs-laser based approaches for bottom-up growth of Cu(In,Ga)Se2 micro islands utilizing either site-controlled assembly of In(,Ga) droplets on laser-patterned substrates during physical vapor deposition, or laser-induced forward transfer of (Cu,In,Ga) layers for local precursor arrangement. The Cu(In,Ga)Se2 absorbers formed after selenization can deliver working solar devices showing efficiency enhancement under light concentration. T2 - SPIE OPTO, 2018 CY - San Francisco, USA DA - 29.01.2018 KW - Chalcopyrite KW - Cu(In,Ga)Se2 KW - Fs-laser patterning KW - Laser-induced forward transfer KW - Micro solar cell PY - 2018 SN - 978-1-5106-1540-3 SN - 0277-786X SN - 1996-756X VL - 10527 SP - 1052707-1 EP - 1052707-9 PB - SPIE CY - Bellingham, WA, USA AN - OPUS4-44450 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -